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Part : 2SK1947-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 534 Best Price : $25.02 Price Each : $30.79
Part : 2SK1947(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 38 Best Price : $64.7000 Price Each : $82.9000
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2SK1947 Datasheet

Part Manufacturer Description PDF Type
2SK1947 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1947 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1947 Hitachi Semiconductor Mosfet Guide Original
2SK1947 Renesas Technology Silicon N Channel MOS FET Original
2SK1947 Renesas Technology Silicon N-Channel MOS FET Original
2SK1947 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1947 N/A Catalog Scans - Shortform Datasheet Scan
2SK1947 N/A Catalog Scans - Shortform Datasheet Scan
2SK1947 N/A FET Data Book Scan
2SK1947-E Renesas Technology Silicon N Channel MOS FET Original

2SK1947

Catalog Datasheet MFG & Type PDF Document Tags

2SK1947

Abstract: DSA003639 2SK1947 Silicon N-Channel MOS FET ADE-208-1334 (Z) 1st. Edition Mar. 2001 Application High , Outline TO-3PL D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK1947 , 2SK1947 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test , 100 A / µs Note 1. Pulse Test 3 2SK1947 Power vs. Temperature Derating Maximum Safe , Source Voltage V GS (V) 10 2SK1947 Static Drain to Source on State Resistance vs. Drain Current
Hitachi Semiconductor
Original
DSA003639 diode 1334 D-85622
Abstract: 2SK1947 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , (Flange) 3. Source 708 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , trr - - 710 HITACHI 2SK1947 Power vs. Temperature Derating Maximum Safe Operation , 2SK1947 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage , HITACHI 2SK1947 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) 500 - 200 -
OCR Scan
Abstract: 2SK1947 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , Control Outline 2SK1947 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 250 , . V a lu e at T c = 25 °C HITACHI 2 2SK1947 Electrical Characteristics (Ta = 25 °C) Item , V Rl = 1.2 £2 P ulse T e st HITACHI 3 2SK1947 HITACHI 4 2SK1947 HITACHI 5 2SK1947 B ody to Drain D iode R everse T ypica l C a pa citance vs. Drain to S ource V olta ge R e -
OCR Scan

Hitachi DSA002748

Abstract: 2SK1947 Silicon N-Channel MOS FET November 1996 Application High speed power switching , 3 S 1. Gate 2. Drain 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain , 50 200 50 200 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1947 Electrical Characteristics , 2SK1947 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) 1000 300 Drain Current I D (A , 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4 2SK1947
Hitachi
Original
Hitachi DSA002748

Hitachi DSA002781

Abstract: 2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 200 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1947 Electrical Characteristics (Ta = 25 , ) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1947 Power vs. Temperature Derating , ) Gate to Source Voltage V GS (V) 4 2SK1947 Drain to Source Saturation Voltage vs. Gate to Source
Hitachi
Original
Hitachi DSA002781

Hitachi DSA00335

Abstract: 2SK1947 2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25 , +150 °C Notes 1. PW 10 µs, duty cycle 1 % 2. Value at Tc = 25 °C 2 2SK1947 Electrical , . Pulse Test 3 2SK1947 Power vs. Temperature Derating Maximum Safe Operation Area 1000 300 , ) 10 2SK1947 Static Drain to Source on State Resistance vs. Drain Current 5 0.5 Pulse Test
Hitachi Semiconductor
Original
Hitachi DSA00335

2SK1947

Abstract: products contained therein. 2SK1947 Silicon N-Channel MOS FET ADE-208-1334 (Z) 1st. Edition Mar , . Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to , . Value at Tc = 25 °C 2 2SK1947 Electrical Characteristics (Ta = 25°C) Item Symbol Min , 2SK1947 Power vs. Temperature Derating Maximum Safe Operation Area 1000 300 Drain Current I D (A , °C 75°C 2 ­25°C 4 6 8 Gate to Source Voltage V GS (V) 10 2SK1947 Static Drain
Hitachi Semiconductor
Original

2SK1947

Abstract: 2SK1947-E Information Part Name 2SK1947-E Quantity 250 pcs REJ03G0986-0300 Rev.3.00 May 13, 2009 Page 6 of 6 , . 2SK1947 Silicon N Channel MOS FET REJ03G0986-0300 Rev.3.00 May 13, 2009 Application High speed , W °C °C 2SK1947 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown , /dt = 100 A/µs 2SK1947 Main Characteristics Maximum Safe Operation Area Power vs , ) Static Drain to Source on State Resistance RDS (on) () 2SK1947 0.20 Pulse Test VGS = 10 V
Renesas Technology
Original
PRSS0004ZF-A

2SK1947

Abstract: 2SK1947-E ­0.1 2.8 ± 0.2 1.0 3.8 7.4 Ordering Information Part Name 2SK1947-E Quantity 500 pcs , 2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07 , 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Unit V , 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/µs 2SK1947 Main Characteristics Power vs , ) Static Drain to Source on State Resistance RDS (on) () 2SK1947 0.20 Pulse Test VGS = 10 V
Renesas Technology
Original

2SK1947

Abstract: 2SK1947-E Information Part Name 2SK1947-E Quantity 250 pcs REJ03G0986-0300 Rev.3.00 May 13, 2009 Page 6 of 6 , 2SK1947 Silicon N Channel MOS FET REJ03G0986-0300 Rev.3.00 May 13, 2009 Application High , A A A W °C °C 2SK1947 Electrical Characteristics (Ta = 25°C) Item Drain to source , 0, diF/dt = 100 A/µs 2SK1947 Main Characteristics Maximum Safe Operation Area Power vs , ) Static Drain to Source on State Resistance RDS (on) () 2SK1947 0.20 Pulse Test VGS = 10 V
Renesas Technology
Original

2SK1947

Abstract: 2SK1947 Silicon N Channel MOS FET Application TO­3PL High speed power switching , - * PW 10 µs, duty cycle 1 % * Value at Tc = 25 °C 2SK1947 Table 2 Electrical , - * Pulse Test 2SK1947 Power vs. Temperature Derating Maximum Safe Operation Area 1000 , (V) 10 2SK1947 Static Drain to Source on State Resistance vs. Drain Current 5 0.5 , Drain Current I D (A) 50 2SK1947 Body to Drain Diode Reverse Recovery Time Typical
Hitachi Semiconductor
Original

2SK1778

Abstract: 2SJ236 0.9 2SK1517 450 ± 30 20 120 0.2 0.25 2-3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 Â
-
OCR Scan
2SJ182 2SJ236 2SJ175 2SJ237 2SJ176 2SK1093 2SK1778 2Sk1776 2SK1777 2SI23S

BI 370

Abstract: 2SK1878 2SK1947 Bi HS PSW MOS N E 250 DSS ±30 s 50 D 200 ±10« ±25 250« 200 2 3 10 1» 20 30 10 25 2SK1948 , =345ns. toff=620nstyp ID=25A, VGS=10V 296 GDS 2SK1947 5830 265 0 10 0.055 10 25 ton=330ns. toff
-
OCR Scan
2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 2SK1867 BI 370 2SK1878 LM9005 LM 0022 2501L BA 5810

2SK1637

Abstract: 2SK2097 . 700
-
OCR Scan
2SK1637 2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

2SK1778

Abstract: 2SK1776 0.9 2SK1517 450 ± 30 20 120 0.2 0.25 2-3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 Â
-
OCR Scan
2SK1094 2SK1877 A20 ZENER diode Hitachi Scans-001 2SJ235 2SK974 2SK1299 2SK1254 2SJ214 2SJ219

2SK1778

Abstract: 2SK1776 2SK19471 250 50 200 0.047 0.055 30 345 620 5810 2SK1948 50 200 0.047 0.055 30 330 620 5830 , TO-3PL 2SK1947 250 ± 30 50 200 0.047 0.055 2-3 140 2SK1519 450 ± 30 30 200 0.11 0.15 2-3 120
-
OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 peh 165 HITACHI 2SJ* TO-3 2SK1164

2SK1778

Abstract: 2sk1299 2SK19471 250 50 200 0.047 0.055 30 345 620 5810 2SK1948 50 200 0.047 0.055 30 330 620 5830 , TO-3PL 2SK1947 250 ± 30 50 200 0.047 0.055 2-3 140 2SK1519 450 ± 30 30 200 0.11 0.15 2-3 120
-
OCR Scan
2SK1165 2SK1166 2SK1167 2SK1168 2SK1919 2SK151 2SK1169 2SK1170

2SK1778

Abstract: 2SK1776 0.9 2SK1517 450 ± 30 20 120 0.2 0.25 2-3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 Â
-
OCR Scan
T0220FM 2SK1095 2SK1305 2SK1306 2SK1307 2SK1318

2SK1778

Abstract: 2SK109 0.9 2SK1517 450 ± 30 20 120 0.2 0.25 2-3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 Â
-
OCR Scan
2SK109 2SJ248 2SJ222 2SK1297 2SK1514 2SK1665 2SJ215

2SK1778

Abstract: 2SJ236 0.9 2SK1517 450 ± 30 20 120 0.2 0.25 2-3 120 2SK1518 500 0.22 0.27 TO-3PL 2SK1947 250 Â
-
OCR Scan
PF0042 2SJ299 2sj177 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216

2SK975 equivalent

Abstract: k2796 2SK1516 2SK2568 2SK1517 2SK1518 TO-3PL 2SK1947 2SK1519 2SK1520 2SK1521 2SK1522 TO-3P · FM 2SK2008 2SK1670 , 2SK1518 TO-3PL 2SK1947 2SK1519 2SK1520 2SK1521 2SK1522 TO-3P*FM 2SK2008 2SK1670 2SK1405 Standard series TO , (2SK1670) 2SK1831 2SK1832 2SK1328 2SK1329 (2SK1405) 2SK1859 2SK1775 TO-3PL (2SK1947) 2SK1948 (2SK1519
-
OCR Scan
2SK2728 2SK975 equivalent k2796 POWER MOS FET 2sj 2sk equivalent transistor 2sk TRANSISTOR 2SK 1180 SK1626 2SK1151 2SK1152 2SK1155 2SK1157 2SK1313 2SK1314
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