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Part : 2SK1934-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 532 Best Price : $10.62 Price Each : $13.07
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2SK1934 Datasheet

Part Manufacturer Description PDF Type
2SK1934 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1934 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1934 Hitachi Semiconductor Mosfet Guide Original
2SK1934 Renesas Technology Silicon N-Channel MOS FET Original
2SK1934 Renesas Technology Silicon N Channel MOS FET Original
2SK1934 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1934 N/A Catalog Scans - Shortform Datasheet Scan
2SK1934 N/A FET Data Book Scan
2SK1934-E Renesas Technology Silicon N Channel MOS FET Original

2SK1934

Catalog Datasheet MFG & Type PDF Document Tags

2SK1934

Abstract: 2SK1934 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , breakdown â'¢ Suitable for Switching regulator Outline 2SK1934 Absolute Maximum Ratings (Ta = , 2SK1934 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test , HITACHI 3 2SK1934 Maximum Safe Operation Area Power vs. Temperature Derating Case Temperature , 4 2 4 6 Gate to Source Voltage 8 Vgs 10 (V) 2SK1934 HITACHI 5 2SK1934
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OCR Scan

2SK1934

Abstract: products contained therein. 2SK1934 Silicon N-Channel MOS FET ADE-208-1333 (Z) 1st. Edition Mar , S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1934 Absolute Maximum Ratings (Ta = 25 , +150 °C Notes 1. PW 10 µs, duty cycle 1 % 2. Value at Tc = 25°C 2 2SK1934 Electrical , Test 3 2SK1934 Maximum Safe Operation Area Power vs. Temperature Derating ) ea ar , to Source Voltage VGS (V) 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source Voltage
Hitachi Semiconductor
Original
D-85622
Abstract: 2SK1934 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , itching regulator Outline 1. Gate 2. Drain (Flange) 3. Source 700 2SK1934 Absolute Maximum , 2SK1934 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source , 2SK1934 Power vs. Temperature Derating 50 30 Maximum Safe Operation Area < Q C 10 . , ) HITACHI 703 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain t0 -
OCR Scan

Hitachi DSA002748

Abstract: 2sk1934 2SK1934 Silicon N-Channel MOS FET November 1996 Application High speed power switching , regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1934 Absolute , 2SK1934 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source , = 100 A / µs 3 2SK1934 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Drain , ) 4 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to
Hitachi
Original
Hitachi DSA002748

Hitachi DSA002780

Abstract: 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1934 Absolute Maximum , Tstg 2 1 Ratings 1000 ±30 8 24 8 150 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1934 , 2SK1934 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Drain Current I D (A) Maximum Safe , °C 75°C ­25°C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 2SK1934 Drain to Source
Hitachi
Original
Hitachi DSA002780

Hitachi DSA00395

Abstract: 2SK1934 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , . Value at Tc = 25°C 2 2SK1934 Electrical Characteristics (Ta = 25°C) Item Symbol Min , - µs I F = 8 A, VGS = 0, diF / dt = 100 A / µs Note 1. Pulse Test 3 2SK1934 , Tc = 25°C 2 75°C 0 ­25°C 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1934
Hitachi Semiconductor
Original
Hitachi DSA00395

DSA003639

Abstract: 2SK1934 2SK1934 Silicon N-Channel MOS FET ADE-208-1333 (Z) 1st. Edition Mar. 2001 Application High , . Drain (Flange) 3. Source 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , , duty cycle 1 % 2. Value at Tc = 25°C 2 2SK1934 Electrical Characteristics (Ta = 25°C) Item , 2SK1934 Maximum Safe Operation Area Power vs. Temperature Derating ) ea ar n) (o DS , Tc = 25°C 2 75°C 0 ­25°C 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK1934
Hitachi Semiconductor
Original
DSA003639

2SK1934

Abstract: 2SK1934-E 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1934-E Quantity 360 , . 2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous: ADE-208-1333) Rev.2.00 Sep 07, 2005 , of 6 2 S 3 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , , RL = 7.5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/µs 2SK1934 Main , Source on State Resistance RDS (on) () 2SK1934 5 4 Pulse Test 3 ID = 5 A 2A 1A 2
Renesas Technology
Original
PRSS0004ZE-A SC-65

2SK1934

Abstract: 2SK1934 Silicon N Channel MOS FET Application TO­3P High speed power switching , - * PW 10 µs, duty cycle 1 % * Value at Tc = 25 °C 2SK1934 Table 2 Electrical , - * Pulse Test 2SK1934 Maximum Safe Operation Area Power vs. Temperature Derating , to Source Voltage VGS (V) 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source , °C 2 1 0.5 0.1 0.2 0.5 1 Drain Current 2 I D (A) 5 10 2SK1934 Typical
Hitachi Semiconductor
Original

2SK1934

Abstract: 2SK1934-E 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1934-E Quantity 360 , 2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous: ADE-208-1333) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item , , VGS = 10 V, RL = 7.5 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/µs 2SK1934 Main , Source on State Resistance RDS (on) () 2SK1934 5 4 Pulse Test 3 ID = 5 A 2A 1A 2
Renesas Technology
Original
Abstract: Name 2SK1934-E Quantity 360 pcs Shipping Container Box (Tube) Note: For some grades , developed or manufactured by or for Renesas Electronics. 2SK1934 Silicon N Channel MOS FET REJ03G0985 , . Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1934 , 7.5 â"¦ IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/µs 2SK1934 Main , Source on State Resistance RDS (on) (â"¦) 2SK1934 5 4 Pulse Test 3 ID = 5 A 2A 1A Renesas Technology
Original
Abstract: Name 2SK1934-E Quantity 360 pcs Shipping Container Box (Tube) Note: For some grades , developed or manufactured by or for Renesas Electronics. 2SK1934 Silicon N Channel MOS FET REJ03G0985 , . Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1934 , 7.5 â"¦ IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/µs 2SK1934 Main , Source on State Resistance RDS (on) (â"¦) 2SK1934 5 4 Pulse Test 3 ID = 5 A 2A 1A Renesas Electronics
Original

2SK1637

Abstract: 2SK2097 . 692
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OCR Scan
2SK1637 2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

BI 370

Abstract: 2SK1878 2SK1934 Hi HS PSW. SW-Reg MOS N E 1000 DSS ±30 s 8 D 150 ±10« ±25 250« 800 2 3 10 lm 4 6 20 4 , 10 4 ton=170ns, toff=505nstyp ID=4A. VGS-10V 149 GDS 2SK1934 5810 210 0 10 0.055 10 25 ton
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OCR Scan
2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 2SK1867 BI 370 2SK1878 LM9005 LM 0022 2501L BA 5810

2SK1161

Abstract: 2SK1162 455 2620 2SK1773 1000 5 100 1.5 2 5 135 345 1700 2SK1934 1000 8 150 1.2 1.6 6 170 505 2690
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OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166

HITACHI 2SJ* TO-3

Abstract: btm 330 455 2620 2SK1773 1000 5 100 1.5 2 5 135 345 1700 2SK1934 1000 8 150 1.2 1.6 6 170 505 2690
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OCR Scan
2SK1167 2SK1168 2SK695 HITACHI 2SJ* TO-3 btm 330 2sk1635 2SK1169 2SK1170 2SK1515 2SK1516

2SK1778

Abstract: 2SK1776 455 2620 2SK1773 1000 5 100 1.5 2 5 135 345 1700 2SK1934 1000 8 150 1.2 1.6 6 170 505 2690
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OCR Scan
2SK1776 2SK1778 2sk1518 peh 165 2SK1517 2SK1518 2SK1403 2SK1403A 2SK1968 2SK1573

2SK1778

Abstract: 2sk1299 455 2620 2SK1773 1000 5 100 1.5 2 5 135 345 1700 2SK1934 1000 8 150 1.2 1.6 6 170 505 2690
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OCR Scan
2SK1919 2sk1299 2SK151 Hitachi Scans-001 2SJ236 2SK1339 2SK1340 2SK1341 2SK1342 2SK1933 2SK415

2SK2829

Abstract: Spl 740 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934
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OCR Scan
2SK2829 Spl 740 2sk1 2SK2728 28K13 TTP-80 HAT1030 TSSOP45 HAT1031TT HAT1032TT HAT2031TV

4311 mosfet transistor

Abstract: 2SK2068 4101 2SK1934 4061 4071 4101 2SK1195 2SK1672 4061 4071 4101 4061 4071 4101 2SK1533
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OCR Scan
4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor S2VC 2SK2067 2SC3164 STO-220 2SK1244 2SK1534 VR61F1 MA1000
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