NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SK1930 | Toshiba | Power MOSFET Selection Guide with Cross Reference Data |
45 pages, |
Original |  |
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| 2SK1930 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
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| 2SK1930 | Toshiba | N-Channel MOSFET |
6 pages, |
Original | |
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| 2SK1930 | Toshiba |
9 pages, |
Original | |
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| 2SK1930 | Toshiba | Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications |
5 pages, |
Scan | |
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| 2SK1930 | Toshiba | FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) |
5 pages, |
Scan | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SK1930 NMOS (-MOS.5) 2SK1930 : mm DC-DC : RDS (ON) = 3.0 () : |Yfs| = 2.0S () : IDSS = 300A () (VDS = 800V) : Vth =1.53.5V (VDS = 10VID 10VID = 1mA) (Ta = 25°C , 2-10S2B 2-10S2B : 1.5 g () 1 2006-11-09 2SK1930 (Ta = 25°C , IDR = 4A, VGS = 0V K1930 K1930 () No. (: : ) 2 2006-11-09 2SK1930 3 2006-11-09 2SK1930 4 2006-11-09 2SK1930 5 2006-11-09 2SK1930 20070701-JA 20070701-JA · ... | Original |
6 pages, |
VDD-400V 2SK1930 RGS20K K1930 2SK1930 abstract |
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| Abstract: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = , JEITA TOSHIBA 2-10S2B 2-10S2B Weight: 1.5 g (typ.) 1 2002-09-02 2SK1930 Electrical , ) VDSF - - -1.9 V IDR = 4 A, VGS = 0 V Marking 2 2002-09-02 2SK1930 3 2002-09-02 2SK1930 4 2002-09-02 2SK1930 5 2002-09-02 2SK1930 RESTRICTIONS ON ... | Original |
6 pages, |
2SK1930 2SK1930 abstract |
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| Abstract: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = , TOSHIBA 2-10S2B 2-10S2B Weight: 1.5 g (typ.) 1 2002-09-02 2SK1930 Electrical Characteristics (Ta , V IDR = 4 A, VGS = 0 V Marking 2 2002-09-02 2SK1930 3 2002-09-02 2SK1930 4 2002-09-02 2SK1930 5 2002-09-02 2SK1930 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK1930 2SK1930 abstract |
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| Abstract: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = , ) 1 2006-11-09 2SK1930 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , lead (Pb)-free finish. 2 2006-11-09 2SK1930 3 2006-11-09 2SK1930 4 2006-11-09 2SK1930 5 2006-11-09 2SK1930 RESTRICTIONS ON PRODUCT USE 20070701-EN 20070701-EN · The information ... | Original |
6 pages, |
2SK1930 k1930 2SK1930 abstract |
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| Abstract: 2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = , : 1.5 g (typ.) 1 2004-07-06 2SK1930 Electrical Characteristics (Ta = 25°C) Characteristics , lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-06 2SK1930 3 2004-07-06 2SK1930 4 2004-07-06 2SK1930 5 2004-07-06 2SK1930 RESTRICTIONS ON PRODUCT USE ... | Original |
6 pages, |
2SK1930 k1930 2SK1930 abstract |
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| Abstract: TOSHIBA 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII 5) 2SK1930 , /5 TOSHIBA 2SK1930 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION , ) - Year (Last Number of the Christian Era) 2000-01-31 2/5 TOSHIBA 2SK1930 id - vds id - vds , TOSHIBA 2SK1930 10 RDS(ON) - Te ¡5 gs os W o co COMMON SOURCE vGS = iov , /5 TOSHIBA 2SK1930 rth - tv PULSE WIDTH V (s) SAFE OPERATING AREA 0.1 0.05L SINGLE ... | OCR Scan |
5 pages, |
2SK1930 2SK1930 abstract |
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| Abstract: TOSHIBA 2SK1930 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII 5) 2SK1930 , to change without notice. 1997-12-11 1/5 TOSHIBA 2SK1930 ELECTRICAL CHARACTERISTICS (Ta = 25°C , TOSHIBA 2SK1930 id - vds id - vds common source te = 25°c 15 j Xio 5 , TOSHIBA 2SK1930 10 RDS(ON) - Te ¡5 gs tó g o co COMMON SOURCE vGs=iov , 2SK1930 rth - tv PULSE WIDTH tw (s) SAFE OPERATING AREA SINGLE NONREPETITIVE PULSE Tc = 25°C Curves ... | OCR Scan |
5 pages, |
2SK1930 2SK1930 abstract |
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| Abstract: (3.0) 2SK2603 2SK2603 (3.6) 2SK2883 2SK2883 (3.6) 4 2SK1119 2SK1119 (3.8) 2SK1930 (3.8) NTPCA8008-H NTPCA8008-H (0.58 , 100 TO-220AB 3 3.8 10 2 60 2SK1930 1000 4 80 TO-220FL ... | Original |
22 pages, |
2SK3498 2SK3407 TPCA8004 MOSFET TOSHIBA 2SK TPC8206 2SK2962 2sj618 TPC8405 2SK1382 complementary MOSFET 2sk 2SK3868 2SK3265 2SK3342 2SK3497 datasheet abstract |
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| Abstract: ) 2SK1930 (3.8) NTPCA8008-H NTPCA8008-H (0.58) 4.5 2SK2608 2SK2608 (4.3) 2SK2700 2SK2700 (4.3) 2SK2719 2SK2719 (4.3) 2SK3564 2SK3564 (4.3 , 100 TO-220AB 3 3.8 10 2 60 2SK1930 1000 4 80 TO-220FL ... | Original |
28 pages, |
SK3403 TPC8107 equivalent 2sk2698 mosfet TPC8206 tpc8303 2SK1530 tpca8103 complementary MOSFET 2sk tpc8107 mosfet 2SK2718 2SK3567 equivalent SK3090 2SK3667 equivalent 2SK3868 datasheet abstract |
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| Abstract: STI Type: 2SK1358 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS(on) Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0 Case Style: TO-247 Polarity: Industry Type: 2SK1358 2SK1358 STI Type: 2SK1359 2SK1359 Notes: Breakdown Voltage: 1000 Continuous Current: 5 RDS(on) Ohm: 3.8 Trans Conductance Mhos: 1.0 Trans Conductance A: 2.0 Gate Thr ... | Original |
65 pages, |
2SK2485 2sk1477 2SK2043 2SK2182 2sk1507 equivalent 2sk2038 2SK1937 2N5094DIE 2SK1358 2SK1694 2sk2082 2SK2475 2SK2397-01MR 2SK2370 2SK1358 abstract |
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| Abstract: ) 2SK2862 2SK2862(3.2) 4.5 2SK4003 2SK4003(2.2) 2SK3975 2SK3975(2.2) TPCA8008-H TPCA8008-H(0.58) 2SK1119 2SK1119(3.8) 2SK1930(3.8 ... | Original |
23 pages, |
pal 011 A SPEAKER OUTPUT IC tmpa8873cpbng Tb1307fG TMPA8851 TMPA8899 TC90A96 TMPA8857 TMPA8853 gt30G122 gt30f122 TMPA8893CXBNG tmp*a8873 TMPA8891 TC90A96BFG datasheet abstract |
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| Abstract: 2SK2777 2SK2777 2SK2889 2SK2889 2SK2883 2SK2883 2SK2884 2SK2884 2SK3879 2SK3879 2SK1930 (TO-262/TO-263AB) Maximum Ratings VDSS(V) ID ... | Original |
16 pages, |
2SK3569 equivalent TPCS8210 application 2SK3767 equivalent 2sk3265 2sk3799 to252ab 2SK2847 tpc8214-h 2sk3625 2SK3568 equivalent 2SK3934 equivalent 2SK3566 equivalent 2SK2996 equivalent POWERMOSFET07 POWERMOSFET07 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK1930 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 + W=2.5000 + KP=1.0452E-6 0452E-6 0452E-6 0452E-6 www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/jpwrmos.lib |
Spice Models | 29/07/2012 | 86.34 Kb | LIB | jpwrmos.lib |
| + GAMMA=0 + KAPPA=0) *$ .MODEL M2SK1930 NMOS( + LEVEL=3 + L=2.0000E-6 0000E-6 0000E-6 0000E-6 + W=2.5000 + KP=1.0452E-6 0452E-6 0452E-6 0452E-6 www.datasheetarchive.com/files/spicemodels/misc/jpwrmos.lib |
Spice Models | 22/09/2001 | 86.36 Kb | LIB | jpwrmos.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQB4N80 | FQB4N80 Buy | 2SK1930(SM) Buy | Toshiba | Close | Power MOSFET | 800V N-Channel QFET |
| FQB5N90 | FQB5N90 Buy | 2SK1930(SM) Buy | Toshiba | Close | Power MOSFET | 900V N-Channel QFET |
| FQB6N80 | FQB6N80TM Buy | 2SK1930(SM) Buy | Toshiba | Close | Power MOSFET | 800V N-Channel QFET |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| IPP90R1K2C3 Buy | 2SK1930 Buy | Toshiba | N-Channel MOSFETs (500V...900V) |