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Part : 2SK1934-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 532 Best Price : $8.36 Price Each : $8.36
Part : 2SK1930 Supplier : Toshiba Manufacturer : ComSIT Stock : 990 Best Price : - Price Each : -
Part : 2SK1930(Q) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 570 Best Price : $18.10 Price Each : $18.10
Part : 2SK1931-7101 Supplier : Shindengen Electronic Manufacturing Manufacturer : Chip1Stop Stock : 170 Best Price : $14.90 Price Each : $14.90
Part : 2SK1938-01RSC Supplier : Fuji Electric Manufacturer : Chip1Stop Stock : 99 Best Price : $47.60 Price Each : $47.60
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2SK193 Datasheet

Part Manufacturer Description PDF Type
2SK193 NEC Semiconductor Selection Guide 1995 Original
2SK193 NEC Small Signal FET(Junction type) FM tuner Original
2SK193 N/A Shortform Transistor PDF Datasheet Scan
2SK193 N/A Semiconductor Master Cross Reference Guide Scan
2SK193 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK193 N/A High Frequency Device Data Book (Japanese) Scan
2SK193 N/A FET Data Book Scan
2SK1930 Toshiba Power MOSFETs Cross Reference Guide Original
2SK1930 Toshiba N-Channel MOSFET Original
2SK1930 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK1930 Toshiba Original
2SK1930 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications Scan
2SK1930 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (pi-MOSII.5) Scan
2SK1930(2-10S1B) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Original
2SK1930(2-10S2B) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, FET General Purpose Power Original
2SK1930TE24L Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original
2SK1930(TE24L,Q) Toshiba 2SK1930 - MOSFET N-CH 1000V 4A TO-220 Original
2SK1930TE24R Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original
2SK1930(TO-220FL) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power Original
2SK1930(TO-220SM) Toshiba 2SK1930 - TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Original
Showing first 20 results.

2SK193

Catalog Datasheet MFG & Type PDF Document Tags

transistor 2sk193

Abstract: 2sk193 TS â'¢ ; h Junction Field Effect Transistor 2SK193 FMfa-tffl « m. ¿L-CftÃ"t't. Idss =2.5 raA TYP. (VDS=5.0 V, VGS-0) lyfsl â'"3.5 mS TYP. (VDS-5.0 V,ID = 0>5 mA,f=1.0 kHz) Cr5S =0.07 pF TYP. (Vds =5.0 V, VGS=0, f=1.0 MHz) wrm (TA = 25 -C) Jl g * * £ fe * it r- h â  K u >r > Vgdo , 2SK193 «Ã"ffm-tt" (TA = 25 X) m ' i « * & fi MIN. TYP. MAX. * te r - h - T - ^ « » IG!>S Vcs = â , MHz Gps, NFÌSJî» 50 Q 3 NEC 2SK193 «t « m±ftm% l â'¬ » u * to «co^afiu^T^'ift
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OCR Scan
T460-8525 transistor 2sk193 2sK193 transistor transistor C982 yx 8001 IVN1 D13527JJ4V0DS00 TC-5502B T10B-8001 JMHHW25-7-1

2SK193

Abstract: transistor 2sk193 NEC ELECTRON DEVICE D ES C R IP T IO N N-CHANNEL JUNCTIO N FIELD-EFFECT TRANSISTOR 2SK193 The 2SK193 is designed fo r use in FM tu n e r o f a p o ta b le ra d io receiver. P A C K A G E D IM EN SIO N S in m illim ete rs FEA TU RES · H igh lyfslt : 3 .5 rnS T Y P . IVfs1 1 ( V DS = 5 .0 V , l D = 0 .5 m A , f = 1.0 k H z ) · L o w C rss C r s s ( V d s = 5 .0 V , V G S = 0 , .0 -6 .0 M 4 .0 -8 .0 Iq S S Test C o n d itio n s : V q 5 = 5.0 V , V q s = 0 32 2SK193 T
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OCR Scan

2SK192

Abstract: 2SK192 fet 24m 10 -1.2 -3 10 1« 7m 10 IDSS 2SK193 NEC FM RF N D -20 GDO 10m G 250m -lOOn -0. 5 0. 5m 8m 5 , 2SK192A 5 0.07 0 5 3 6 100M PG=21dBtyp f=100MHz 10U GSD 2SK193 55 10 0 10 AVGS=20mVmax VDS
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OCR Scan
2SK160A 2SK169 2SK171 2SK176 2SK182 2SK185 2SK192 2SK192 fet 2sk180 2sk163 nec 2SK161 2SK162 2SK163 2SK165 2SK168

c2785

Abstract: 2SK193 . 2SK193 2S C 2 7 8 6 2SC 2787 2 S C 2784 2SA1174 2 S C 2785 2S A 1175 2SD1020 2SB810 2 S D 1021 2SB811 A P , V -1 0 0 mA 2SK193 N-ch I to o 10* 250 Rank lDSS*m A > U 0.5 - 1.0 L 4 .0 - , F 2SK193 or 2S C 2786 F M /C O N V . 2SC 2786 or 2SC 2787 -H - 2SD 102Û or 2SD 1021 2 S B
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OCR Scan
c2785 C 2785 2SC2785 M 2SD1021 2sc2785 transistor SST 250

2SK68A

Abstract: 2SK44 10 ft#2SK193 2SK37 6 0 0 2SK38 8 0 0 11 DS»G 2SK38A 12 GSD , šfíz, Rg=10kQ 2 SGDC 2SU8 5 0.07 0 5 3. 5 6 100M PG=18dBtyp f=100MHz 40 tt#2SK193/195 2SK49
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OCR Scan
2SJ18 2SK60 2SK68 2SJ20 2SK70 2SK68A 2SK44 2sK30 fet 2SK34 2SK30 2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK13

2SK30

Abstract: 2sK30 fet 10 ft#2SK193 2SK37 6 0 0 2SK38 8 0 0 11 DS»G 2SK38A 12 GSD
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OCR Scan
2SK19TM 2SK23A-9 2SK44SP 2SK24 2SK25 2SK33 FET 2SK23A 2sk43 3A 2SK30 2SK41 GSD 2SK15 2SK16 2SK17 2SK18 2SK18A

2SK68A

Abstract: 2SK44 D =18dBtyp f=100MHz 40 tt#2SK193/195 2SK49 80D SGD. -ft#2SK65 2SK50 3 0.4 0 10 2.0 3. 5 100M
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OCR Scan
2SK45 2SK46 2SK59 2SK63 2SK66 2SK73 2SK44 D 2SK79 2SK503 2SK47 2SK48 2SK54 2SK55

2sk129

Abstract: 2sk150 datasheet 2SK191 2SK192A 2SK193 2SK194 2SK195 2SK196H -40 -40 -25 -20 -50 -40 -15 -20 -20 -20
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Original
2SK101 2SK104 2SK105 2SK107 2SK109 2SK131 2sk129 2sk150 datasheet 2SK107 data sheet 2SK105 Datasheet 2SK102 2SK103 2SK106

2SK520

Abstract: 2SK523 10 ft#2SK193 2SK37 6 0 0 2SK38 8 0 0 11 DS»G 2SK38A 12 GSD
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OCR Scan
2SK507 2SK508 2SK511 2SK514 2SK518 2SK519 2SK520 2SK523 2SK537 2sk515 2SK492 2SK445 2SK493 2SK505

2sk1060

Abstract: 2SK type -92 50 30 400 9.0 8.0 AF low noise amplification 2SK193 SST 20 10 250
NEC
Original
2sk1060 2SK type transistor 2sk transistor 2sk162 2SK1794 2sk2136 2SK533 2SK660 2SK997 2SK998 2SK1000 1759-V

2sk2500

Abstract: UPC1037HA =18dBtyp f=100MHz 40 tt#2SK193/195 2SK49 80D SGD. -ft#2SK65 2SK50 3 0.4 0 10 2.0 3. 5 100M
NEC
Original
UPA64HA 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 M8E02 PA605T UPA606T
Showing first 20 results.