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Part : 2SK1761(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 180 Best Price : $12.90 Price Each : $12.90
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2SK1761 Datasheet

Part Manufacturer Description PDF Type
2SK1761 Hitachi Semiconductor Mosfet Guide Original
2SK1761 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1761 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1761 Renesas Technology Silicon N Channel MOS FET Original
2SK1761 Renesas Technology Silicon N-Channel MOS FET Original
2SK1761 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1761 N/A FET Data Book Scan
2SK1761 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1761 N/A Catalog Scans - Shortform Datasheet Scan
2SK1761-E Renesas Technology Silicon N Channel MOS FET Original

2SK1761

Catalog Datasheet MFG & Type PDF Document Tags

K1761

Abstract: 2SK1761 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features â'¢ Low on-resistance â'¢ High speed switching â'¢ Low drive current , T O -? ? n A R 1. Gate G 2. Drain o (Flange) 3. Source OS 2SK1761 Absolute , 3 2SK1761 HITACHI 4 2SK1761 HITACHI 5 2SK1761 Body to Drain Diode Reverse , Drain C urrent I d (A) G ate C harge Qg (nc) HITACHI 6 2SK1761 HITACHI 7 2SK1761
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OCR Scan
K1761

Hitachi DSA002780

Abstract: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source , V V A A A W °C °C 2 2SK1761 Electrical Characteristics (Ta = 25°C) Item Drain to source , (on) tr t d(off) tf VDF t rr 3 2SK1761 Maximum Safe Operation Area Power vs. Temperature , Voltage V DS (V) 20 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 4 2SK1761
Hitachi
Original
Hitachi DSA002780 D-85622

2SK1761

Abstract: products contained therein. 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 (Z) 1st. Edition Mar , 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , at Tc = 25 °C 2 2SK1761 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ , 100 A / µs Note ID = 6 A VGS = 10 V*1 1. Pulse Test 3 2SK1761 Maximum Safe Operation , 2SK1761 Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation
Hitachi Semiconductor
Original

DSA003639

Abstract: 2SK1761 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 (Z) 1st. Edition Mar. 2001 Application High , -220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1761 Absolute Maximum , Tstg ­55 to +150 °C Notes 1. PW 10 µs, duty cycle 1 % 2. Value at Tc = 25 °C 2 2SK1761 , 10 V*1 1. Pulse Test 3 2SK1761 Maximum Safe Operation Area Power vs. Temperature Derating , ) 20 0 2 4 6 8 Gate to Source Voltage V GS (V) 10 2SK1761 Static Drain to
Hitachi Semiconductor
Original
DSA003639

GS SH 2 12 D

Abstract: 2SK1761 2SK1761 Silicon N Channel MOS FET Application TO­220AB High speed power switching , - * * PW 10 µs, duty cycle 1 % Value at Tc = 25 °C 2SK1761 Table 2 Electrical , - * Pulse Test 2SK1761 Power vs. Temperature Derating Maximum Safe Operation Area 160 , 6 8 Gate to Source Voltage V GS (V) 10 2SK1761 Drain-Source Saturation Voltage vs , Current I D (A) 5 10 2SK1761 Body-Drain Diode Reverse Recovery Time Typical Capacitance
Hitachi Semiconductor
Original
GS SH 2 12 D

Hitachi DSA002748

Abstract: 2SK1761 Silicon N-Channel MOS FET November 1996 Application High speed power switching , . Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1761 Electrical Characteristics (Ta = 25 , Crss td(on) tr td(off) tf VDF trr 3 2SK1761 Maximum Safe Operation Area Power vs. Temperature , Voltage V DS (V) 20 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 4 2SK1761
Hitachi
Original
Hitachi DSA002748

2SK1761

Abstract: Diode DH 585 2SK1761 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , Suitable for sw itchingregulator, D C-DC converter Outline 580 2SK1761 Absolute Maximum Ratings , ' 2 Tch Tstg HITACHI 581 2SK1761 Electrical Characteristics (Ta = 25°C) Item Drain to , HITACHI 2SK1761 Maximum Safe Operation Area Power vs. Temperature Derating Channel Dissipation , ) Gate to S ource V oltage V g s (V) HITACHI 583 2SK1761 Drain to Source Saturation Voltage vs
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OCR Scan
Diode DH 585

2SK1761

Abstract: Hitachi DSA00391 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features · · · , (Flange) 3. Source G S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings , , duty cycle 1 % 2. Value at Tc = 25 °C 2 2SK1761 Electrical Characteristics (Ta = 25°C) Item , 2SK1761 Maximum Safe Operation Area Power vs. Temperature Derating 100 160 10 µ 30 s , Voltage V GS (V) 10 2SK1761 Static Drain to Source on State Resistance vs. Drain Current Drain
Hitachi Semiconductor
Original
Hitachi DSA00391

2SK1761

Abstract: 2SK1761-E Name 2SK1761-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades , 2SK1761 Silicon N Channel MOS FET REJ03G0968-0200 (Previous: ADE-208-1315) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 S 2SK1761 Absolute , IF = 12 A, VGS = 0, diF / dt = 100 A / µs 2SK1761 Main Characteristics Maximum Safe , Resistance RDS (on) () 2SK1761 1.0 Pulse Test VGS = 10 V 0.8 0.6 ID = 10 A 0.4 5A 2A
Renesas Technology
Original
PRSS0004AC-A
Abstract: ± 0.1 2.54 ± 0.5 Ordering Information Part Name 2SK1761-E Quantity 500 pcs Shipping , developed or manufactured by or for Renesas Electronics. 2SK1761 Silicon N Channel MOS FET REJ03G0968 , 1 of 6 2 3 S 2SK1761 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source , A, VGS = 0, diF / dt = 100 A / µs 2SK1761 Main Characteristics Maximum Safe Operation Area , Resistance RDS (on) (â"¦) 2SK1761 1.0 Pulse Test VGS = 10 V 0.8 0.6 ID = 10 A 0.4 5A Renesas Technology
Original

2SK1761

Abstract: 2SK1761-E Name 2SK1761-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades , . 2SK1761 Silicon N Channel MOS FET REJ03G0968-0200 (Previous: ADE-208-1315) Rev.2.00 Sep 07, 2005 , . Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 S 2SK1761 Absolute Maximum , , VGS = 0, diF / dt = 100 A / µs 2SK1761 Main Characteristics Maximum Safe Operation Area , (on) () 2SK1761 1.0 Pulse Test VGS = 10 V 0.8 0.6 ID = 10 A 0.4 5A 2A 0.2
Renesas Technology
Original

2sk1760

Abstract: 2SK1767 900 DSS ±30 s ±5 D 100 ±10« ±30 100« 900 2. 5 3.5 10 lm 1 3.1 20 3 2SK1761 H ÃL HS PSW MOS_ N , =85ns,toff=144nstyp [D=6A. VGS=10V 116B GDS 2SK1761 1100 68 0 10 0.35 10 6 ton=85ns. tofM44nstyp ID
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OCR Scan
2SK1733 2SK1734 2SK1735 2SK1736 2SK1737 2SK1738 2sk1760 2SK1767 2SK1745 2SK1758 2SK1747

Hitachi DSA00279

Abstract: ) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr See characteristics curves of 2SK1761, 2SK1762
Hitachi
Original
Hitachi DSA00279 2SK2426

2SK1761

Abstract: 2SK1762 - * Pulse Test See characteristics curve of 2SK1761, 2SK1762. Hitachi Semiconductor
Hitachi Semiconductor
Original
220CFM

wm60

Abstract: Hitachi DSA002780 d(off) tf VDF t rr See characteristic curves of 2SK1761. 3 2SK1762 Maximum Safe Operation
Hitachi
Original
wm60

2SK1637

Abstract: 2SK1151 0.4 0.55 5 68 102 690 2SK1761 12 75 0.23 0.35 8 85 144 1100 2SK1400 300 7 50 0.5 0.7 5 60 100
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OCR Scan
2SK1838 2SK1151 2SK1152 2SK1880 2SK1636 2SK1313 2SK1637 2SK1314 2SK1315

2SK1637

Abstract: 2SK2097 . 576
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OCR Scan
2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK+series 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

2SK1762

Abstract: DSA0010892 - * Pulse Test See characteristic curves of 2SK1761. 2SK1762 Power vs. Temperature
Hitachi Semiconductor
Original
DSA0010892 220FM

Hitachi DSA002781

Abstract: (on) tr t d(off) tf VDF t rr See characteristics curves of 2SK1761, 2SK1762. 3 2SK2426
Hitachi
Original
Hitachi DSA002781

HITACHI DIODE

Abstract: DSA003773 characteristics curves of 2SK1761, 2SK1762. 3 Unit: mm 2.54 2.54 15.0 ± 0.3 4.5 ± 0.3 2.7 ±
Hitachi Semiconductor
Original
HITACHI DIODE DSA003773
Abstract: d(off) tf VDF t rr See characteristic curves of 2SK1761. 3 2SK1762 Maximum Safe Operation -
OCR Scan
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