2SK1691 EN4224B 72006QB TC-00000047 61599TH 70193TH BX-0293 ITR01810 ITR01811

Ordering number : EN4224B SANYO Semiconductors DATA SHEET 2SK1691 N-Channel Silicon MOSFET General-Purpose Switching Device

2SK1691 2SK1691 Ordering number : EN4224B EN4224B SANYO Semiconductors DATA SHEET 2SK1691 2SK1691 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features · · Low ON-resistance. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 Gate-to-Source Voltage VGSS ±30 V 5 A Drain Current (DC) ID Drain Current (Pulse) IDP V 20 A 1.65 W Allowable Power Dissipation PD 60 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Symbol V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0V VDS=450V, VGS=0V VGS=±30V, VDS=0V 450 VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=3A 2.0 RDS(on) Ciss ID=3A, VGS=10V VDS=20V, f=1MHz max IDSS IGSS Unit V 1.0 ±100 2.0 mA nA 3.0 4.0 1.0 V S 1.4 700 pF VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. 100 pF 40 pF 15 ns See specified Test Circuit. 30 ns See specified Test Circuit. 130 ns Fall Time td(off) tf See specified Test Circuit. 45 Diode Forward Voltage VSD IS=5A, VGS=0V Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time ns 1.8 V (Note) Be careful in handling the 2SK1691 2SK1691 because it has no protection diode between gate and source. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72006QB 72006QB MS IM TC-00000047 TC-00000047 / 61599TH 61599TH (KT) / 70193TH 70193TH (KOTO) BX-0293 BX-0293 No.4224-1/4 2SK1691 2SK1691 Package Dimensions unit : mm (typ) 7513-002 Package Dimensions unit : mm (typ) 7001-003 4.5 0.2 3.0 2 2.7 1 : Gate 2 : Drain 3 : Source 2.55 2.55 2.55 0.4 2.55 3 2.7 2 0 to 0.3 1.2 2.55 1 1.4 3 0.8 0.4 11.0 (9.4) 1 1.35 1.5MAX 8.8 1.6 20.9 1.2 0.8 8.8 1.3 9.9 1.3 11.5 4.5 10.2 0.2 10.2 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : SMP-FD SANYO : SMP Switching Time Test Circuit VIN VDD=200V 10V 0V ID=3A RL=66.7 VIN PW=10µs D.C.1% VOUT D G S 2SK1691 2SK1691 50 6.0 V Drain to Source on State Current, IDS(on) - A ID - VDS 10 0.0 V 5.0V =1 6 V GS Drain Current, ID - A 8 4.5V 4 4.0V 2 3.5V 3.0V 0 0 4 8 12 16 Drain-to-Source Voltage, VDS - V 20 24 ITR01810 ITR01810 IDS(on) - VGS 10 VDS=10V Tc= -2 5°C P.G 9 8 7 25°C 75°C 6 5 4 3 2 1 0 0 2 4 6 8 10 Gate-to-Source Voltage, VGS - V 12 14 ITR01811 ITR01811 No.4224-2/4 2SK1691 2SK1691 yfs - ID 7 5 °C 3 = Tc 5 -2 2 25° °C 75 C 1.0 7 5 3 1.8 1.6 1.4 1.2 3A ID=5A 1.0 1A 0.8 0.6 0.4 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID - A 2 10 8 6 4 2 -40 -20 0 20 40 60 80 100 120 Case Temperature, Tc - °C 140 8 10 12 0V =1 S , VG A, 0V =2 GS A =3 ID 1.0 V =3 ID 0.5 -40 -20 0 20 40 60 80 100 120 Case Temperature, Tc - °C ITR01814 ITR01814 140 ITR01815 ITR01815 Ciss, Coss, Crss - VDS 2 VGS=0V f=1MHz 1000 7 4 Ciss, Coss, Crss - pF Cutoff Voltage, VGS(off) - V 14 ITR01813 ITR01813 1.5 0 -60 160 VGS(off) - Tc 5 6 RDS(on) - Tc 2.0 VDS=10V 0 -60 4 Gate-to-Source Voltage, VGS - V IDS(on) - Tc 12 2 0 ITR01812 ITR01812 Static Drain-to-Source On-State Resistance, RDS(on) - Drain to Source on State Current, IDS(on) - A RDS(on) - VGS 2.0 VDS=10V Static Drain-to-Source On-State Resistance, RDS(on) - Forward Transfer Admittance, yfs - S 10 3 ID =1mA , VD =1 S 0V 2 Ciss 5 3 2 Coss 100 7 5 Crss 3 1 2 0 -60 10 -40 -20 0 20 40 60 80 100 120 Case Temperature, Tc - °C 0 160 7 tf tr 3 7 1.0 2 3 5 Drain Current, ID - A 24 28 32 ITR01817 ITR01817