2SK1657 SC-59 D17806JJ4V0DS00 TC-7791B D17806JJ4V0DS M8E02

2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4.

2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 MOS MOS Field Effect Transistor 2SK1657 2SK1657 N MOSFET 2SK1657 2SK1657 2.5 V N MOSFET mm 2.8 ±0.2 0.4 +0.1 0.05 MOSFET IGSS IGSS 0.4 +0.1 0.05 3 V IC 3 0.95 2.9 ±0.2 0.95 2 +0.1 0.65 0.15 1.5 1 IGSS = ±5.0 nA MAX.VGS = ±3.0 V 1.1 to 1.4 0.16 +0.1 0.06 0.3 Marking 2SK1657 2SK1657 SC-59 SC-59 (Mini Mold) 1. Source 2. Gate 3. Drain 0 to 0.1 G19 TA = 25°C - VDSS VGS = 0 V 30 V - VGSS VDS = 0 V ±7 V ID(DC) ±100 mA ID(pulse) ±200 mA PW10 ms, Duty Cycle50% PT 200 mW Tch 150 °C Tstg -55+150 °C Drain Body Diode Gate Gate Protection Diode Source - - D17806JJ4V0DS00 D17806JJ4V0DS00 4 TC-7791B TC-7791B December 2005 NS CP(K) "" PDF 1990 2SK1657 2SK1657 TA = 25°C A ±5.0 TYP. MAX. 10 MIN. nA 1.5 V IDSS VDS = 30 V, VGS = 0 V IGSS VGS = ±3.0 V, VDS = 0 V VGS(off) VDS = 3.0 V, ID = 1.0 A 0.9 1.2 | yfs | VDS = 3.0 V, ID = 10 mA 20 40 RDS(on)1 VGS = 2.5 V, ID = 10 mA 25 45 RDS(on)2 VGS = 4.0 V, ID = 10 mA 18 25 VDS = 3.0 V, VGS = 0 V, f = 1 MHz 15 pF - mS Ciss Coss 10 pF Crss 1.5 pF td(on) ID = 10 mA, VGS = 3.0 V, VDD = 3.0 V 50 ns tr RG = 10 23 ns td(off) 34 ns tf 43 ns TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form = 1 s Duty Cycle 1% 2 VGS 10% td(on) tr ton td(off) tf toff D17806JJ4V0DS D17806JJ4V0DS 2SK1657 2SK1657 TA = 25°C D17806JJ4V0DS D17806JJ4V0DS 3 2SK1657 2SK1657 4 D17806JJ4V0DS D17806JJ4V0DS 2SK1657 2SK1657 · 200512 · · · · · OAAV NECNEC M8E02 M8E02.11 NEC 211-86681753 044(435)5111 NEC URL http://www.necel.co.jp/ 044-435-9494 9:0012:00 1:005:00 E-mail info@necel.com NECNEC C04.2T