500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SK1626-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,534 Best Price : $1.25 Price Each : $1.25
Shipping cost not included. Currency conversions are estimated. 

2SK1626 Datasheet

Part Manufacturer Description PDF Type
2SK1626 Hitachi Semiconductor Mosfet Guide Original
2SK1626 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1626 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1626 Renesas Technology Silicon N Channel MOS FET Original
2SK1626 Renesas Technology Silicon N-Channel MOS FET Original
2SK1626 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1626 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1626 N/A FET Data Book Scan
2SK1626 N/A Catalog Scans - Shortform Datasheet Scan
2SK1626 N/A Catalog Scans - Shortform Datasheet Scan

2SK1626

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1626, 2SK1627 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2SK1626 , 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C HITACHI 2 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source 2SK1626 V(B )D S RS , voltage 2SK1626 lDS S drain current 2SK1627 V D = 400 V, V G = 0 S S 2.0 â'" 3.0 -
OCR Scan

Hitachi DSA002748

Abstract: 2SK1626, 2SK1627 Silicon N-Channel MOS FET November 1996 Application High speed power , 1. Gate 2. Drain 3. Source S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to , Ratings 450 500 ±30 5 20 5 35 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1626 V(BR)DSS
Hitachi
Original
Hitachi DSA002748 D-85622
Abstract: 2SK1626,2SK1627 Silicon N-Channel MOS FET HITACHI Application High speed power switching , . Source OS 522 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25 °C) Item Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current Body to drain diode , 2SK1626,2SK1627 Electrical Characteristics (T a = 25°C) Item Drain to source breakdown voltage Symbol 2SK1626 V (B R )D S S 2SK1627 V (B R )G S S Igss Min 450 500 ±30 - - - - Typ - Max - Unit V Test -
OCR Scan
Abstract: 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK1626-E 2SK1627 , 2SK1626, 2SK1627 Silicon N Channel MOS FET REJ03G0959-0200 (Previous: ADE-208-1302) Rev , 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1626 , â'"55 to +150 °C °C Drain to source voltage 2SK1626 2SK1627 Gate to source voltage , 2SK1626 2SK1627 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain Renesas Technology
Original
PRSS0003AD-A

Hitachi DSA00396

Abstract: 2SK1155 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain 3. Source G S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1626 Ratings Unit VDSS 450 V 2SK1627 500 Gate to , +150 °C Note 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1626, 2SK1627 , - V I D = 10 mA, VGS = 0 Drain to source 2SK1626 V(BR)DSS 450 breakdown voltage
Hitachi Semiconductor
Original
Hitachi DSA00396 2SK1155 2SK1156

2SK1626

Abstract: 2SK1627 0.5 ± 0.1 Ordering Information Part Name 2SK1626-E 2SK1627-E Quantity 500 pcs 500 pcs , 2SK1626, 2SK1627 Silicon N Channel MOS FET REJ03G0959-0200 (Previous: ADE-208-1302) Rev , 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1626 , ­55 to +150 °C °C Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain , ns Drain to source breakdown voltage 2SK1626 2SK1627 Gate to source breakdown voltage
Renesas Technology
Original

2SK1155

Abstract: 2SK1156 2SK1626, 2SK1627 Silicon N-Channel MOS FET ADE-208-1302 (Z) 1st. Edition Mar. 2001 , Outline TO-220FM D 1 2 3 1. Gate 2. Drain 3. Source G S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1626 Ratings , cycle 1% 2. Value at TC = 25°C 2SK1626, 2SK1627 Electrical Characteristics (Ta = 25°C) Item , to source 2SK1626 V(BR)DSS 450 breakdown voltage 2SK1627 500 Gate to source
Hitachi Semiconductor
Original
MUS40 DSA003639

2SK1155

Abstract: 2SK1156 2SK1626, 2SK1627 Silicon N-Channel MOS FET Application TO­220FM High speed power switching , - Drain to source voltage 2SK1626 VDSS 450 - 2SK1627 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1626, 2SK1627 Table 2 Electrical , - Drain to source breakdown voltage 2SK1626 V(BR)DSS 450 - 2SK1627 - - , - Zero gate voltage drain current 2SK1626 IDSS - - 250 µA VDS = 360 V, VGS
-
Original
Abstract: Ordering Information Part Name 2SK1626-E 2SK1627-E Quantity 500 pcs 500 pcs Shipping Container , developed or manufactured by or for Renesas Electronics. 2SK1626, 2SK1627 Silicon N Channel MOS FET , . Drain 3. Source S 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , 2SK1626 2SK1627 Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW â , Drain to source breakdown voltage 2SK1626 2SK1627 Gate to source breakdown voltage Gate to Renesas Technology
Original

2SK1627

Abstract: 2SK1155 products contained therein. 2SK1626, 2SK1627 Silicon N-Channel MOS FET ADE-208-1302 (Z) 1st , 2SK1626, 2SK1627 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1626 Ratings Unit VDSS 450 V 2SK1627 500 Gate to source voltage VGSS , 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1626, 2SK1627 Electrical Characteristics , 10 mA, VGS = 0 Drain to source 2SK1626 V(BR)DSS 450 breakdown voltage 2SK1627 500
Hitachi Semiconductor
Original

2SK1626

Abstract: 2SK1627 Part Name 2SK1626-E 2SK1627-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box , . 2SK1626, 2SK1627 Silicon N Channel MOS FET REJ03G0959-0200 (Previous: ADE-208-1302) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 3 1. Gate 2. Drain 3. Source S 2SK1626, 2SK1627 Absolute , +150 °C °C Drain to source voltage 2SK1626 2SK1627 Gate to source voltage Drain current , Drain to source breakdown voltage 2SK1626 2SK1627 Gate to source breakdown voltage Gate to
Renesas Technology
Original

2SK1158

Abstract: 2sk1299 2.8 2.5 27 50 330 2SK1863 500 2.2 3 2SK1626 450 5 35 1 1.4 4 35 80 640 TO-220FM 2SK1627 , 2SK1626 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4
-
OCR Scan
2SK1838 2SK1151 2SK1152 2SK1880 2SK1636 2SK1313 2SK1158 2sk1299 2SK1341 Hitachi Scans-001

2SK1615

Abstract: 2SK1619 ±10« ±25 250« 500 2 3 10 lm 4 6.5 10 4 2SK1626 Hi SW-Reg. DDC MOS N E 450 DSS ±30 s 5 D 35 ±10«  , ) 640 20 0 10 1.4 10 2.5 ton=35ns, toff=80nstyp ID=2. 5A, VDD=30V 292 GDS 2SK1626 640 20 0 10
-
OCR Scan
2SK1614 2SK1615 2SK1616 2SK1617 2SK1618 2SK1619 2sk1633 2SK1638 2SK1637

flyback 200w

Abstract: 2SK1635 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SK579 2SK580 2SK1153 2SK513 2SK1770 2SK975 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK1165 2SK1166 2SK1167

2SK1637

Abstract: 2SK1151 2.8 2.5 27 50 330 2SK1863 500 2.2 3 2SK1626 450 5 35 1 1.4 4 35 80 640 TO-220FM 2SK1627
-
OCR Scan
2SK1624 2SK1625 2SKI647 2SK1528 2SK1667 2SK1761

2SK1637

Abstract: 2SK2097 ). 518
-
OCR Scan
2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK+series 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

2SK1155

Abstract: 2SK1156 Dissipation 20 30 10 Pch (W) 50 1 2SK1627 2SK1626 3 30 10 100 300 1,000 Drain to
Hitachi Semiconductor
Original
2SK2114 2SK2115 220CFM

2cv1

Abstract: 2SJ113 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SJ214 2SK1094 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527

mosfet inverter schematics

Abstract: MBN300A6 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E mosfet inverter schematics MBN300A6 UPS schematics inverter circuit schematics GN12015C GN12030E

2SK1778

Abstract: 2SK1776 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SJ175 2SK1776 2SK1778 2SJ236 2sj217 2SK430 2SK1629 2SK1836 2SK1837 2SKS34 2SK684 2SK1199

2SK975 equivalent

Abstract: k2796 ) 2SK1314 (1.2) m 2SK1540 (0.6) 2SK1541 (0.7) 2SK1626 (1.0) 2SK1627 (1.2) 2SK1567 (0.7) \P 2SK2114 (1.0 , 2SK1338 2SK1807 TO-220FM 2SK1862 2SK1863 2SK1626 2SK1627 2SK1566 2SK1567 2SK1572 2SK1637 2SK1404 2SK2422 , -220FM 2SK1668 2SK1762 2SK1626/27 2S K 1566/67 2SK1404 LDPAK 2SK1313/14 2SK1540/41 2SK1315/16 T 0 -3 P 2SK2075 , 2SK2328 2SK1809 2SK1338 2SK1807 TO-220FM 2SK1668 2SK1762 2SK2345 2SK1862 2SK1863 2SK1626 2SK1627 2SK1566
-
OCR Scan
2SK2728 2SK975 equivalent k2796 POWER MOS FET 2sj 2sk equivalent transistor 2sk TRANSISTOR 2SK 1180 SK1626 2SK2117 2SK2059 2SK1339 2SK2118 2SK1340 2SK1342
Showing first 20 results.