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Part : 2SK1470-TD-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 10,000 Best Price : $0.35 Price Each : $0.43
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2SK147 Datasheet

Part Manufacturer Description PDF Type
2SK147 N/A Basic Transistor and Cross Reference Specification Scan
2SK147 N/A Shortform Transistor PDF Datasheet Scan
2SK147 N/A Shortform Datasheet & Cross References Data Scan
2SK147 N/A Semiconductor Master Cross Reference Guide Scan
2SK147 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK147 N/A FET Data Book Scan
2SK147 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SK147 Sanyo Semiconductor Very High-Speed Switching Applications Scan
2SK147 Toshiba Silicon N-Channel JFET Scan
2SK1470 Sanyo Semiconductor Ultrahigh-speed switching Original
2SK1470 N/A FET Data Book Scan
2SK1470 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan
2SK1470 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan
2SK1471 Sanyo Semiconductor Ultrahigh-speed switching Original
2SK1471 N/A N-Channel Power MOSFET Scan
2SK1471 N/A FET Data Book Scan
2SK1471 Sanyo Semiconductor TP Type / MP Type Transistors Scan
2SK1471 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan
2SK1471FA N/A N-Channel Power MOSFET Scan
2SK1472 Sanyo Semiconductor Ultrahigh-Speed Switching Applications Original
Showing first 20 results.

2SK147

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ; '6PD[ *6; 5.2 '6 FE (IGSX-VDS ) VDS 2SK30ATM 2SK117 2SK147 2SK170 , 2SK30A IGSX ­ VDS 2SK147 100 n 5 2 ID = 10 mA ID = 1 mA IGSX (A) IGSX (A) 3 10 , 36 40 (V) 2SK147 IGSX-VDS 44 [3] E )(7 ,&/ LQSXW FRQGHQFHU , = 1 kHz -8 10 2SK30A, 2SK117, 2SK147 2SK30A L 2SC1815 10 -9 2SK117 RG 4kT RG 2SK147 2SC2240 10 -10 10 100 1k 10 k 5.22 RG 100 k 1000 k -
Original
2SK112 2SK113 3SK101 JFET 2SK30A 2SK30A D 2SK373 jfet idss 10 vp -6 2SK15
Abstract: SILICON N CHANNEL JUNCTION TYPE 2SK147 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES: â  High Iyfs| : | yfs |=40mS(Typ.) (VDS=10V, VGS*0, IDSS=5mA) â'¢-High Breakdown Voltage : Vgbsh-40V -'Low Noise : NF=1.0dE (Typ.) (VDS=10V, IDr=5iaA, f=lkHz, R=100fi) â  Hi«h Input Impedance : IGSS=-lnA (Max.) (Vc,s=-30V) â'¢ .High Drain Power Dissipation : PD=600mW â'¢ Coiiiplenentary to 2SJ72. MAXIL'IUM RATINGS CTa~Z5°C) CHARACTERISTIC SYMBOL Gate-Drain Voltage Gatfc Current Drain Power -
OCR Scan
Toshiba 2SK147 2SK147 toshiba 2sk147 BL Toshiba 2SJ72 Low noise audio amplifier 90MAX 60MAX VDS-10V
Abstract: [8] 2. 2.1 (3) 2SK147 2SK147 × 2 and 2SC2240 × 2 1 k VR 270 270 +40 V 20 20 180 k 2.7 k 270 k 2.7 k 270 0.0929 uF 3.9 k 20 50 k 20 2SC2240 - GR 6.8 k 910 47 1.5 k 0.298 uF 12 k 330 VR 270 2SA970 - BL × 2 47 1SS226 × 2 1SS193 910 910 2SC2240 - BL 61 ,+) I = N+] N I = N+] G% $ -G%9 YL P9 G% 485 2SA970 - GR -40 V [8] 1.5 W 2.2 -
Original
2SC1959 2SA1015 2SK389 2SC3423 2SK405 2SJ109 2SC3280 2SA1301 2SC3281 2SA1302 2sk405 2sj115 2SC3182N 2SA950 2SC2120 2SC3422 2SA1359
Abstract: D -40 GDS 10» G 0. 6/CH -ln -30 5m 30m 10 -0.3 -1. 2 10 0. 1« 30» 40» 10 5m 2SK147 Jfê LF LN , =10dBmax f=100Hz.Rg=100!3 2SJ72 74A DGS 2SK147 2. 5 100M 101 DGS 2SK148 7.5 2 10 2 400M -
OCR Scan
2SK130 2SK130A 2SK131 2SK134 2SK135 2SK137A 2SK146 2SJ49 2sk134 2SK150 25/CH 2SK132 2SK133
Abstract: Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25°C free air temperature: IFN147 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current InterFET
Original
2SK147 equivalent NJ450
Abstract: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C â'¢ LOW NOISE AUDIO AMPLIFIER â'¢ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Min Gate Source Breakdown Voltage Test Conditions VGS(0ff) Drain Saturation Current (Pulsed) Unit -
OCR Scan
00Q0BG4
Abstract: E6 IF N 1 4 7 8-94 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR · LOW NOISE AUDIO AMPLIFIER · Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2.4 mW/°C IFN147 At 25°C free air temperature: Process NJ450 Max Unit V -1 nA pA V mA Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse -
OCR Scan
T0-18
Abstract: 100 Rg (n) Type No. N-Channel High lY fsl Low Noise High lY fsl Low Noise 2SK147 j P-Channel I -
OCR Scan
2SC3225 transistor 2SC2655 2sc2705 2sc2500 2sc2383 high voltage driver 2SA1160 2SC2500 2SC2703 2SC2236 2SC2655 2SC3328
Abstract: NPD5566 2N5564 2N5565 2SK371 2SK363 2SK372 2SK146 2SK147 2SK147V 2SK162 2SK162 BSR56 BSV78 BSV78 BSV78 Advanced Semiconductor
Original
2SK366 KE4393 2N4393 MOTOROLA npd5564 2sk194 2sk162 hitachi npd5565 2SK364 2SK240 2SK431 UC704 2SK194
Abstract: DGS 2SJ70 185 55 0 -10 1 2 1k 100 NF=10dBmax f=100Hz.Sg=100Q 2SK147 74A DGS 2SJ72 185 55 0 -10 1 -
OCR Scan
2SJ69 2SJ73 2SJ74 2SJ75 2SJ76 2SJ77 2SJ99 2SJ96 2SJ82 2SJ83 2SJ92
Abstract: registered trademarks of Linear Technology Corporation. Equivalent to Japanese 2SK147. 2 For devices with I Linear Technology
Original
SFH213 BPW34B FD1500W BPW21 bpw21 op ir photodiode amplifier fast photodiode amplifier low noise ir photodiode amplifier LT1806 325MH ODD45W
Abstract: Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 InterFET
Original
2SK105 IFN105 NJ132 2sk146 equivalent transistor sdg 2sk146 datasheet 2SK105 Datasheet 2sk152 equivalent 2SK17 2SK40 2SK59 IFN17 IFN40
Abstract: Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 InterFET
Original
2SK152 2SJ44 IFN113 IFN152 IFN363 IFP44 IFN146
Abstract: : 1 Equivalent to Japanese 2SK147 2 For devices with IDSS higher than about 12mA, R5 should be Linear Technology
Original
bpw21 amplifier BPW21 equivalent jfet photo diode SFH213 amplifier jfet photodiode LT1124 LT1793
Abstract: 20 20 20 20 50 (ºC) VDS 0* 3 1.5 1.5 0 10 4 10 -10 2SK146 2SK147 -
Original
2SK101 2SK104 2SK107 2SK109 2sk129 2sk150 datasheet 2SK107 data sheet 2sk122 2SK102 2SK103 2SK106
Abstract: spectra for various photodiodes 36 B 100 0 Notes: 1 Equivalent to Japanese 2SK147 2 Linear Technology
Original
LTC2410 LTC2411 mmbd3904 wheatstone bridge with thermistor Wheatstone Bridge amplifier siemens thermocouple Wheatstone Resistive Bridge amplifier Correlated Double Sampling LTC24
Abstract: 2SK147 2SK363 3SK38 BU105 2SK150 2SK389 3SK38A BU108 2SK150A -
Original
1S1658 mg75n2ys40 MG15N6ES42 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055
Abstract: Exam ple device No. 2SK147 2SK442 105 Table 2 Tape Dimensions Item B ody w id th Body -
OCR Scan
2SC2655Y 2SC2655-Y 2sc2655 y 2SC2655YTPE6 2SKxxxx 25MAX T0-220
Abstract: = TOSHIBA 2SK147 A2 LT1097 OUTPUT + Ø1 0.47uF 1uF * = 0.1% METAL FILM RESISTOR , , Inc., Bulletin TS-102(N), Minco Products, Inc., 2002. 8. Toshiba, "2SK147 Datasheet," Toshiba Linear Technology
Original
74HC90 Decade Counter YSI 44006 panametrics 74C90 74HC90 NC7504 LTC1799 LT1219L AN93-19 AN93-20
Abstract: 100k A2 LT1097 OUTPUT + 5 + INPUT Q1 * = 1% FILM RESISTOR Q1, Q2 = 2SK147 TOSHIBA Linear Technology
Original
2N2369 transistor pulse generator He-Ne Laser Power Supply circuits tektronix 120-0464-02 lt1073 equivalent ic 2N2369 AVALANCHE PULSE GENERATOR 120-0464-02 AN61-39 AN61-40
Showing first 20 results.