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Part : 2SK1341 Supplier : Hitachi Manufacturer : Bristol Electronics Stock : 24 Best Price : - Price Each : -
Part : 2SK1341-E Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 100 Best Price : $15.60 Price Each : $15.60
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2SK1341 Datasheet

Part Manufacturer Description PDF Type
2SK1341 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1341 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1341 Renesas Technology Silicon N Channel MOS FET Original
2SK1341 Renesas Technology Silicon N-Channel MOS FET Original
2SK1341 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1341 N/A Shortform Datasheet & Cross References Data Scan
2SK1341 N/A Catalog Scans - Shortform Datasheet Scan
2SK1341 N/A Catalog Scans - Shortform Datasheet Scan
2SK1341 N/A Scan
2SK1341 N/A FET Data Book Scan
2SK1341-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 6A TO-3P Original
2SK1341-E Renesas Technology Silicon N Channel MOS FET Original

2SK1341

Catalog Datasheet MFG & Type PDF Document Tags

2SK1341

Abstract: PE-50 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · , 2. Drain (Flange) 3. Source 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Symbol , . PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1341 Electrical Characteristics (Ta = , . Pulse test 3 2SK1341 Power vs. Temperature Derating Maximum Safe Operation Area 50 10 ea , RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID =
Hitachi Semiconductor
Original
PE-50 DSA003721 D-85622

2SK1341-E

Abstract: 2SK1341 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 , 2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1341 Absolute , , VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature Derating , State Resistance RDS (on) () 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A ID = 5 A 4 1A
Renesas Technology
Original
PRSS0004ZE-A SC-65

Hitachi DSA00279

Abstract: 2sk1341 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item , 900 ±30 6 15 6 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical , 2SK1341 4 2SK1341 5 2SK1341 6 2SK1341 When using this document, keep the following
Hitachi
Original
Hitachi DSA00279

Hitachi DSA002757

Abstract: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , switching regulator and DC-DC converter Outline 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item , 900 ±30 6 15 6 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1341 Electrical , : 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1341 4 2SK1341 5 2SK1341 6 2SK1341 When using this document, keep the following in
Hitachi
Original
Hitachi DSA002757

2SK1341

Abstract: DSA003639 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 (Z) 1st. Edition Mar. 2001 Application High , -3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1341 Absolute Maximum , Tstg ­55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1341 , . Pulse test 3 2SK1341 Power vs. Temperature Derating Maximum Safe Operation Area 50 10 ea , RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID =
Hitachi Semiconductor
Original
DSA003639

2SK1341

Abstract: 2SK1341 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features , (Flange) 3. Source 375 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , W °C °C Id ID(pulse) *' IDR Pch*2 Tch Tstg HITACHI 376 2SK1341 Electrical , /dt = 100 A/n-S HITACHI 377 2SK1341 Power vs. Temperature Derating (W) Channel Dissipation , Voltage VGS (V) HITACHI 378 2SK1341 >~ Drain to Source Saturation Voltage vs. Gate to Source
-
OCR Scan

Hitachi DSA002713

Abstract: 2SK1341 Silicon N-Channel MOS FET November 1996 Application High speed power switching , (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25GC) Item Drain to source voltage , r30 6 15 6 100 150 ­55 to +150 qC qC 2 2SK1341 Electrical Characteristics (Ta = 25GC , , RL = 10 : IF = 6 A, VGS = 0 IF = 6 A, VGS = 0, diF/dt = 100 A/Ps 3 2SK1341 Power vs , 2 75°C Ta = 25°C 1 ­25°C 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1341 Drain
Hitachi
Original
Hitachi DSA002713

Hitachi DSA002779

Abstract: 2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features · · · · , S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source , V V A A A W °C °C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Drain to source , Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1341 Power vs. Temperature Derating 150 Channel , 10 Gate to Source Voltage VGS (V) 4 2SK1341 Drain to Source Saturation Voltage VDS (on) (V
Hitachi
Original
Hitachi DSA002779
Abstract: 2SK1341 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power , Outline 2SK1341 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Gate to source voltage ^G , Note f = 1 MHz 1. Pulse test HITACHI 3 2SK1341 HITACHI 4 2SK1341 HITACHI 5 2SK1341 Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Tim e , Gate Charge Qg (nc) Drain Current lD (A) HITACHI 6 2SK1341 Reverse Drain Current vs. 0 -
OCR Scan

2SK1341

Abstract: products contained therein. 2SK1341 Silicon N-Channel MOS FET ADE-208-1278 (Z) 1st. Edition Mar , 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source , 25°C 2 2SK1341 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max , I F = 6 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test 3 2SK1341 Power vs , Saturation Voltage VDS (on) (V) 2SK1341 20 Pulse Test 16 ID = 5 A 12 8 2A 4 1A 8 20 4
Hitachi Semiconductor
Original

2SK1341

Abstract: 2SK1341-E 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 , . 2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 , . Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1341 Absolute Maximum , , VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature Derating , State Resistance RDS (on) () 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A ID = 5 A 4 1A
Renesas Technology
Original
Abstract: ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1341-E Quantity 500 pcs Shipping , developed or manufactured by or for Renesas Electronics. 2SK1341 Silicon N Channel MOS FET REJ03G0938 , , 2005 page 1 of 6 2 S 3 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to , 0 IF = 6 A, VGS = 0, diF/dt = 100 A/µs 2SK1341 Main Characteristics Power vs. Temperature , Drain to Source on State Resistance RDS (on) (â"¦) 2SK1341 10 VGS = 10 V Pulse Test 8 6 2A Renesas Technology
Original

k1341

Abstract: 2SKI34 HITACHI 2SK1341 MAXIMUM SAFE OPERATION AREA TYPICAL OUTPUT CHARACTERISTICS 13 10 30 JOD 300 1.000 , 1 â'"40 0 40 «0 120 160 Cue Tcmperuiuic Tc (°C) HITACHI HITACHI 2SK1341 NORMALIZED
-
OCR Scan
k1341 2SKI34 k134 2SKI34T PWS10/JS L00/MA

HITACHI 2SJ* TO-3

Abstract: btm 330 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6 , 2SK1340 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for
-
OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 HITACHI 2SJ* TO-3 btm 330 2sk1635

2SK1377

Abstract: 2SK1349 2SK1340 HS SHeg, DDC MOS N E 900 DSS ±30 s 5 D 100 ±10« ±25 250« 720 2 3 10 Im 2 3. 2 20 3 2SK1341 , =100ns, toff=225nstyp 1D=3A, VDD=30V 149 GDS 2SK1341 1730 310 0 10 1.6 10 4 ton=155ns, toff
-
OCR Scan
2SK1333 2SK1334 2SK1335 2SK1336 2SK1337 2SK1338 2SK1377 2SK1349 2SK1357 2SK1356 2SK1373

2SK1778

Abstract: 2sk1299 340 3150 2SK1339 3 80 5 7 1.9 50 105 425 2SK1340 5 3 4 3.2 85 180 740 2SK1341 900 6 , 2SK1340 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for
-
OCR Scan
2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1919 2SK1778 2sk1299 peh 165 2SK151 Hitachi Scans-001 2SK1169

2SK1341

Abstract: 2SK1859 - * Pulse Test See characteristic curves of 2SK1341 2SK1859 Power vs. Temperature Derating
Hitachi Semiconductor
Original

Hitachi DSA002781

Abstract: Crss td(on) tr td(off) tf VDF trr See characteristic curves of 2SK1341 3 2SK1859 4
Hitachi Semiconductor
Original
Hitachi DSA002781

flyback 200w

Abstract: 2SK1635 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching
-
OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK513 flyback 200w dc dc flyback 200w 2SK119 mosfet hitachi 2SK822 2SK1154

2cv1

Abstract: 2SJ113 2SK1204 2SK1573 2SK1341 2SK1205 2SK1770 2SK1528 2SK1342 2SK1773 Power MOSFET for Switching
-
OCR Scan
2SJ214 2SK1094 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313
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