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Part : 2SK1165-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 927 Best Price : $4.15 Price Each : $4.15
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2SK1165 Datasheet

Part Manufacturer Description PDF Type
2SK1165 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1165 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1165 Hitachi Semiconductor Mosfet Guide Original
2SK1165 Renesas Technology Silicon N Channel MOS FET Original
2SK1165 Renesas Technology Silicon N-Channel MOS FET Original
2SK1165 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1165 N/A Shortform Datasheet & Cross References Data Scan
2SK1165 N/A Catalog Scans - Shortform Datasheet Scan
2SK1165 N/A Catalog Scans - Shortform Datasheet Scan
2SK1165 N/A FET Data Book Scan
2SK1165-E Renesas Technology Silicon N Channel MOS FET Original

2SK1165

Catalog Datasheet MFG & Type PDF Document Tags

DSA003638

Abstract: 2SK1165 2SK1165, 2SK1166 Silicon N-Channel MOS FET ADE-208-1252 (Z) 1st. Edition Mar. 2001 , Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit , 1% 2. Value at TC = 25°C 2 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 V(BR)DSS 450 breakdown voltage 2SK1166 Typ Max
Hitachi Semiconductor
Original
DSA003638 D-85622

2SK1165

Abstract: 2SK1165-E 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , 2SK1165, 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev , 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1165 2SK1166 Gate to source , 2SK1165 2SK1166 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to source
Renesas Technology
Original
PRSS0004ZE-A 2SK1166-E SC-65

2SK1166

Abstract: 2SK1165 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application TO­3P High speed power switching , - Drain to source voltage 2SK1165 VDSS 450 - 2SK1166 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1165, 2SK1166 Table 2 Electrical , - Drain to source breakdown voltage 2SK1165 V(BR)DSS 450 - 2SK1166 - - , - Zero gate voltage drain current 2SK1165 IDSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original
Abstract: 2SK1165, 2SK1166 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 3. Source 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2SK1165 450 V 2SK1166 Drain to source voltage Ratings 500 Gate to source voltage , °C Note 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1165 , voltage 2SK1165 V(B )DS RS 450 2SK1166 Max Unit Test conditions â'" â'" V -
OCR Scan

2SK1165

Abstract: 2SK1166 products contained therein. 2SK1165, 2SK1166 Silicon N-Channel MOS FET ADE-208-1252 (Z) 1st , . Source 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit VDSS 450 V 2SK1166 500 Gate to source voltage Drain , Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 V(BR)DSS 450 breakdown voltage
Hitachi Semiconductor
Original

2SK1165

Abstract: 2SK1165-E 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , . 2SK1165, 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous: ADE-208-1252) Rev.2.00 Sep 07 , (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 S 3 2SK1165, 2SK1166 , temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1165 2SK1166 Gate to source voltage Drain , °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V
Renesas Technology
Original

K1166

Abstract: K1165 2SK1165,2SK1166 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching , 226 2SK1165, 2SK1166 Absolute Maximum Ratings Item Drain to source voltage 2S K 11 65 2S K 11 , HITACHI 22 7 2SK1165, 2SK1166 Electrical Characteristics Item Drain to source breakdown voltage 2 , HITACHI 228 2SK1165, 2SK1166 Power vs. Temperature Derating Maximum Safe Operation Area (W) Channel , to Source Voltage VDS (V) Gate to Source Voltage Ves (V) HITACHI 229 2SK1165,2SK1166
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OCR Scan
K1166 K1165

Hitachi DSA002780

Abstract: 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features , ) 3. Source S 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode , 500 ±30 12 48 12 100 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS
Hitachi
Original
Hitachi DSA002780
Abstract: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , developed or manufactured by or for Renesas Electronics. 2SK1165, 2SK1166 Silicon N Channel MOS FET , , 2005 page 1 of 6 2 S 3 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item , °C 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current ID 1 Notes , °C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V(BR)DSS 450 500 â'" â Renesas Electronics
Original

Hitachi DSA00387

Abstract: 2SK1165 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features , . Gate 2. Drain (Flange) 3. Source 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol 2SK1165 Ratings Unit VDSS 450 V 2SK1166 500 , 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1165 , = ±25 V, VDS = 0 Zero gate voltage 2SK1165 I DSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original
Hitachi DSA00387

2SK1165

Abstract: 2SK1166 2SK1165, 2SK1166 Silicon N-Channel MOS FET November 1996 Application High speed power , 2 3 1. Gate S 2. Drain (Flange) 3. Source 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1165 Ratings Unit VDSS 450 , TC = 25°C 2SK1165, 2SK1166 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1165 V(BR)DSS 450 2SK1166 Typ Max Unit Test
Hitachi
Original
Abstract: 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1165-E 2SK1166 , developed or manufactured by or for Renesas Electronics. 2SK1165, 2SK1166 Silicon N Channel MOS FET , , 2005 page 1 of 6 2 S 3 2SK1165, 2SK1166 Absolute Maximum Ratings (Ta = 25°C) Item , ° C ° C 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current ID 1 , = 25°C) Item Symbol Min Typ Max Unit 2SK1165 2SK1166 V(BR)DSS 450 500 Renesas Technology
Original

2SK1778

Abstract: 2sk1299 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 , 2SK1165 2SK1166 2SK1167 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836 2SK1837
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OCR Scan
2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1778 2sk1299 peh 165 2SK151 2SK1919 Hitachi Scans-001

HITACHI 2SJ* TO-3

Abstract: btm 330 77 145 1150 2SK1164 500 0.6 0.8 2SK1165 450 12 0.4 0.55 10 90 180 1450 2SK1166 , 2SK1165 2SK1166 2SK1167 2SK1168 2SK1268 2SK1169 2SK1170 2SX1526 2SK1527 2SK1629 2SK1836 2SK1837
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OCR Scan
2SK695 HITACHI 2SJ* TO-3 btm 330 2sk1635 2SK1515 2SK1516 2SK1517 2SK1518 2SK1403 2SK1403A

2sk1197

Abstract: 2SK1173 2SK1165 B iL SW-Reg, DDC MOS N E 450 DSS ±30 s 12 D 100 ±10« ±25 250« 360 2 3 10 lm 6 10 10 6 , =6A,VDD=30V 149 GDS 2SK1165 1450 55 0 10 0. 6 10 6 ton=90ns, toff=180nstyp ID=6A. VDD=30V 149 GDS
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OCR Scan
2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2sk1197 2SK1173 2SK1202 2501L NEC 2501L
Abstract: 2SK1165 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition American Microsemiconductor
Original

flyback 200w

Abstract: 2SK1635 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
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OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK513 2SK1770 flyback 200w dc dc flyback 200w 2SK119 mosfet hitachi 2SK822 2SK1862 2SK1313

2cv1

Abstract: 2SJ113 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
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OCR Scan
2SJ214 2SK1094 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160

2SK1165

Abstract: 2SK2424 - * Pulse Test See characteristics curves of 2SK1165. Hitachi Semiconductor
Hitachi Semiconductor
Original
2SK2424 220CFM
Abstract: drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1165, 2SK1166 Hitachi Semiconductor
Original
2SK1329

2sj177

Abstract: 2sk1301 2SK1161 2SK1162 2SK1163 2SK1206 2SK1225 2SK1315 2SK1316 2SK1328 2SK1163 2SK11S4 2SK1165 2SK1166 2SK1167
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OCR Scan
2sj177 2sk1301 2SK97-2 2sj175 2SKS34 2SK684 2SK1199 2SK415 2SK685 2SK1338
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