500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SK1158-E Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 20 Best Price : $2.34 Price Each : $4.30
Shipping cost not included. Currency conversions are estimated. 

2SK1158 Datasheet

Part Manufacturer Description PDF Type
2SK1158 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1158 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1158 Hitachi Semiconductor Mosfet Guide Original
2SK1158 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1158 Renesas Technology Silicon N Channel MOS FET Original
2SK1158 Renesas Technology Silicon N-Channel MOS FET Original
2SK1158 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1158 N/A Shortform Datasheet & Cross References Data Scan
2SK1158 N/A Catalog Scans - Shortform Datasheet Scan
2SK1158 N/A Catalog Scans - Shortform Datasheet Scan
2SK1158 N/A FET Data Book Scan
2SK1158-E Renesas Technology Silicon N Channel MOS FET Original

2SK1158

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SK1157, 2SK1158 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , motor driver Outline 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 157 450 V 2SK1158 Drain to source voltage Ratings 500 Gate to , 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Drain to source breakdown voltage 2S K 1157 V(B )D S RS 450 2SK1158 Max Unit Test conditions â'" â -
OCR Scan

2SK1157

Abstract: 2SK1158 2SK1157, 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 (Z) 1st. Edition Mar. 2001 , 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1157 Ratings Unit VDSS 450 V 2SK1158 500 Gate to source voltage VGSS , 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1157, 2SK1158 Electrical Characteristics , 2SK1158 Typ Max Unit Test conditions - - V I D = 10 mA, VGS = 0 500 Gate
Hitachi Semiconductor
Original
DSA003638 D-85622

2SK1157

Abstract: 2SK1158 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , Drain to source voltage 2SK1157 VDSS 450 - 2SK1158 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1157, 2SK1158 Table 2 Electrical , - Drain to source breakdown voltage 2SK1157 V(BR)DSS 450 - 2SK1158 - - , = 0 - -­ 2SK1158 VDS = 400 V, VGS = 0
Hitachi Semiconductor
Original

Hitachi DSA00398

Abstract: 2SK1157 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1157, 2SK1158 Absolute Maximum Ratings , V 2SK1158 500 Gate to source voltage Drain current ±30 Drain peak current I D , at TC = 25°C 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1157 V(BR)DSS 450 breakdown voltage 2SK1158 Typ Max Unit Test
Hitachi Semiconductor
Original
Hitachi DSA00398

2SK1157

Abstract: 2SK1157-E 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1157-E 2SK1158-E Quantity , . 2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev.2.00 Sep 07 , 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS , Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1157 2SK1158 Gate to source , 2SK1157 2SK1158 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to source
Renesas Technology
Original
PRSS0004AC-A

Hitachi DSA002712

Abstract: 2SK1157, 2SK1158 Silicon N-Channel MOS FET November 1996 Application High speed power , 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain , 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 Gate to source breakdown voltage Gate to source leak current Zero gate
Hitachi
Original
Hitachi DSA002712

Hitachi DSA002780

Abstract: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 1. Gate 2. Drain (Flange) 3. Source S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak current , 2SK1157, 2SK1158 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1157 V(BR)DSS 2SK1158 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100
Hitachi
Original
Hitachi DSA002780

2SK1157

Abstract: 2SK1157-E 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1157-E 2SK1158-E Quantity , 2SK1157, 2SK1158 Silicon N Channel MOS FET REJ03G0910-0200 (Previous: ADE-208-1248) Rev , 3 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage , temperature Storage temperature Tch Tstg 150 ­55 to +150 °C °C 2SK1157 2SK1158 Gate to , Unit 2SK1157 2SK1158 V(BR)DSS 450 500 - - V ID = 10 mA, VGS = 0 Gate to
Renesas Technology
Original

Hitachi DSA00279

Abstract: 2SK1157, 2SK1158 Silicon N-Channel MOS FET Application High speed power switching Features , 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage VGSS Symbol VDSS Ratings 450 500 ±30 V Unit V 2SK1157, 2SK1158 Drain current Drain peak current Body to drain diode , 2SK1157 V(BR)DS 450 S 2SK1158 500 V(BR)G ±30 SS IGSS - - - - - - ±10 250 V µA µA IG = ±100 µA, VDS = , current Zero gate voltage drain current 2SK1157 IDSS 2SK1158 Gate to source cutoff voltage Static
Hitachi
Original
Hitachi DSA00279
Abstract: 2SK1157,2SK1158 Silicon N-Channel MOS FET HITACHI Application High speed power switching , Suitable for switching regulator, DC-DC converter and motor driver Outline 204 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1157 2SK1158 Gate to source voltage , Unit V V A A A W °C °C HITACHI 205 2SK1157, 2SK1158 Electrical Characteristics Item Drain to source breakdown voltage 2SK1157 2SK1158 V(BR)GSS (T a = 2 5 °C ) Symbol Min V(BR)DSS -
OCR Scan

2SK1157

Abstract: 2SK1158 products contained therein. 2SK1157, 2SK1158 Silicon N-Channel MOS FET ADE-208-1248 (Z) 1st , ) 3. Source G S 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1157 Ratings Unit VDSS 450 V 2SK1158 500 Gate to , +150 °C Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1157, 2SK1158 , breakdown voltage 2SK1158 Typ Max Unit Test conditions - - V I D = 10 mA, VGS =
Hitachi Semiconductor
Original
Abstract: Information Part Name 2SK1157-E 2SK1158-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1157, 2SK1158 Silicon N Channel MOS FET , 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1157, 2SK1158 Absolute Maximum Ratings (Ta , '"55 to +150 ° C ° C 2SK1157 2SK1158 Gate to source voltage Drain current Drain peak , Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit 2SK1157 2SK1158 V(BR)DSS 450 Renesas Technology
Original

2SK1158

Abstract: 2sk1299 70 135 1050 2SK1158 500 60 0.7 0.9 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541
-
OCR Scan
2SK1838 2SK1880 2SK1636 2SK1315 2SK1316 2SK1342 2sk1299 2SK1341 Hitachi Scans-001 2SK1618

flyback 200w

Abstract: 2SK1635 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SK579 2SK580 2SK513 2SK1770 2SK975 2SK1094 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK1161 2SK1162 2SK1163 2SK1206

2SK1157

Abstract: 2SK1158 - * Pulse Test See characteristic curves of 2SK1157, 2SK1158. 2SK1540 L , 2SK1540 S , 2SK1541
Hitachi Semiconductor
Original
Abstract: drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1157, 2SK1158. Hitachi Semiconductor
Original

2sk1197

Abstract: 2SK1173 2SK1157 BiL SW-Reg, DDC MOS N E 450 DSS ±30 s 7 D 60 ±10(i ±25 250« 360 2 3 10 lm 4 6.5 10 4 2SK1158 , 0.9 10 4 ton=70ns, toff=135nstyp ID=4A, VDD=30V 116B GDS 2SK1158 1150 55 0 10 0. 7 10 4 ton
-
OCR Scan
2SK1173 2SK1202 2sk1197 2501L NEC 2501L 2SKU60 2SK1164 2SK1165 2SS1166 2SK1167 2SK1168

2SK1157

Abstract: 2SK1158 - * Pulse Test See characteristic curves of 2SK1157, 2SK1158. 2SK1566, 2SK1567 Maximum Safe
Hitachi Semiconductor
Original
220FM

2SK1637

Abstract: 2SK1151 70 135 1050 2SK1158 500 60 0.7 0.9 2SK1159 450 8 0.55 0.7 7.5 72 145 1150 2SK1160 500
-
OCR Scan
2SK1637 2SK1624 2SK1625 2SKI647 2SK1528 2SK1667 2SK1761

2SK1637

Abstract: 2SK2097 . 204 204 2SK 1159
-
OCR Scan
2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK+series 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740

2cv1

Abstract: 2SJ113 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SJ214 2SK416 2SJ113 2SK414 2cv1 2SK1665 2sj119 121A-4 2SK1225 2SK1328 2SK11S4 2SK1166 2SK1268 2SK1169

2SK1162

Abstract: Hitachi DSA00115 , 2SK1158. 3 2SK1161, 2SK1162 Maximum Safe Operation Area Power vs. Temperature Derating 100
Hitachi
Original
Hitachi DSA00115

OS 470

Abstract: lF = 7 A, VG S = 0, diF /dt = 100 A/|is See characteristic curves of 2SK 1157, 2SK1158. HITACHI
-
OCR Scan
OS 470
Showing first 20 results.