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Part : 2SK1156-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 1,032 Best Price : $1.16 Price Each : $1.16
Part : 2SK1156 Supplier : Hitachi Manufacturer : Bristol Electronics Stock : 50 Best Price : - Price Each : -
Part : 2SK1156(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 470 Best Price : $10.60 Price Each : $10.60
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2SK1156 Datasheet

Part Manufacturer Description PDF Type
2SK1156 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1156 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1156 Hitachi Semiconductor Mosfet Guide Original
2SK1156 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1156 Renesas Technology Silicon N Channel MOS FET Original
2SK1156 Renesas Technology Silicon N-Channel MOS FET Original
2SK1156 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1156 N/A Shortform Datasheet & Cross References Data Scan
2SK1156 N/A Catalog Scans - Shortform Datasheet Scan
2SK1156 N/A Catalog Scans - Shortform Datasheet Scan
2SK1156 N/A FET Data Book Scan
2SK1156-E Renesas Technology Silicon N Channel MOS FET Original

2SK1156

Catalog Datasheet MFG & Type PDF Document Tags

Hitachi DSA00395

Abstract: 2SK1155 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 , , 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage 2SK1156 Typ Max Unit Test conditions - - V I D =
Hitachi Semiconductor
Original
Hitachi DSA00395 D-85622

2SK1155

Abstract: 2SK1156 products contained therein. 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st , G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 Gate to source voltage , Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical , 2SK1156 Typ Max Unit Test conditions - - V I D = 10 mA, VGS = 0 500 Gate
Hitachi Semiconductor
Original

2SK1155

Abstract: 2SK1156 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - Drain to source voltage 2SK1155 VDSS 450 - 2SK1156 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical , - Drain to source breakdown voltage 2SK1155 V(BR)DSS 450 - 2SK1156 - - , = 0 - -­ 2SK1156 VDS = 400 V, VGS = 0
Hitachi Semiconductor
Original
Abstract: 2SK1155,2SK1156 Silicon N-Channel MOS FET HITACHI Application High speed power switching , (Flange) 3. Source 197 2SK1155,2SK1156 Absolute Maximum Ratings (T a = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode , , 2SK1156 Electrical Characteristics ( T a Item Drain to source breakdown voltage = 2 5 °C ) Symbol 2SK1155 V(BR)DSS 2SK1156 V(BR)GSS Min 450 500 ±30 - Typ - Max - Unit V Test -
OCR Scan
2SK115

Hitachi DSA002780

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 , 2SK1156 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V
Hitachi
Original
Hitachi DSA002780

Hitachi DSA00279

Abstract: 2sk1155 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator and DC-DC converter Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain , 2SK1156 V(BR)GSS I GSS 450 500 ±30 - - - - - - ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V , voltage drain current 2SK1155 I DSS 2SK1156 Gate to source cutoff voltage Static Drain to source
Hitachi
Original
Hitachi DSA00279

Hitachi DSA002712

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET November 1996 Application High speed power , . Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 , 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current V(BR
Hitachi
Original
Hitachi DSA002712

2SK1155

Abstract: 2SK1155-E Ordering Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container , 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev , 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS Ratings 450 Unit V , Tstg 150 ­55 to +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source , Drain to source breakdown voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to
Renesas Technology
Original
PRSS0004AC-A

2SK1155

Abstract: DSA003638 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st. Edition Mar. 2001 , , 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 Gate to source voltage VGSS Drain current , µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage 2SK1156 Typ
Hitachi Semiconductor
Original
DSA003638

k1155

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 155 450 V 2SK1156 Drain to source voltage Ratings 500 Gate to source voltage ^G S S , 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1155, 2SK1156 , 1155 V(B )D S RS 450 2SK1156 Max Unit Test conditions â'" â'" V lD= 10 mA
-
OCR Scan
k1155
Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - - 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode , , duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical Characteristics (Ta = , - - 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate voltage , - - 2SK1156 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1155 Hitachi Semiconductor
Original

2SK1155

Abstract: 2SK1155-E Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , . 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 , +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate
Renesas Technology
Original
Abstract: -E 2SK1156-E 500 pcs 500 pcs Quantity Box (Sack) Box (Sack) Shipping Container Note: For some grades , Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE , , 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage , temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155 2SK1156 VGSS , voltage 2SK1155 2SK1156 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr Renesas Technology
Original
Abstract: Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET , . Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item , 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW â , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate Renesas Technology
Original

2SK1158

Abstract: 2sk1299 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541
-
OCR Scan
2SK1838 2SK1880 2SK1636 2SK1315 2SK1316 2SK1342 2sk1299 2SK1341 Hitachi Scans-001 2SK1618

2sk1197

Abstract: 2SK1173 Bj1 SW-Reg, DDC MOS N E 450 DSS ±30 S 5 D 50 ±10/; ±25 250« 360 2 3 10 lm 2. 5 4 10 2.5 2SK1156 , 2SK1156 1050 40 0 10 0.8 10 4 ton=70ns. toff=135nstyp 1D=4A, VDD=30V 116B GDS 2SK1157 1050 40 0 10
-
OCR Scan
2SK1159 2SK1161 2SK1162 2SK1163 2SK1173 2SK1202 2sk1197 2501L NEC 2501L 2SKU60 2SK1164

2SK1313

Abstract: 2SK1155 - * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2SK1313 L , 2SK1313 S , 2SK1314
Hitachi Semiconductor
Original

flyback 200w

Abstract: 2SK1635 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SK579 2SK580 2SK513 2SK1770 2SK975 2SK1094 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK1206 2SK1225 2SK1328 2SK11S4

2SK1637

Abstract: 2SK1151 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5
-
OCR Scan
2SK1637 2SK1624 2SK1625 2SKI647 2SK1528 2SK1667 2SK1761

2SK1637

Abstract: 2SK2097 . 197
-
OCR Scan
2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK+series 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740
Abstract: Rl = 12 £2 1. Pulse test See characteristic curves of 2SK1155, 2SK1156. HITACHI 3 -
OCR Scan
2SK1627
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