500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : 2SK1155-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 521 Best Price : $1.54 Price Each : $1.90
Part : 2SK1155(E) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 230 Best Price : $9.01 Price Each : $11.50
Shipping cost not included. Currency conversions are estimated. 

2SK1155 Datasheet

Part Manufacturer Description PDF Type
2SK1155 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1155 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1155 Hitachi Semiconductor Mosfet Guide Original
2SK1155 Renesas Technology Silicon N Channel MOS FET Original
2SK1155 Renesas Technology Silicon N-Channel MOS FET Original
2SK1155 Hitachi Semiconductor Power Transistors Data Book Scan
2SK1155 N/A Shortform Datasheet & Cross References Data Scan
2SK1155 N/A Catalog Scans - Shortform Datasheet Scan
2SK1155 N/A Catalog Scans - Shortform Datasheet Scan
2SK1155 N/A FET Data Book Scan
2SK1155-E Renesas Technology Silicon N Channel MOS FET Original

2SK1155

Catalog Datasheet MFG & Type PDF Document Tags

2SK1155

Abstract: 2SK1156 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , - Drain to source voltage 2SK1155 VDSS 450 - 2SK1156 V - 500 , - * PW 10 µs, duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical , - Drain to source breakdown voltage 2SK1155 V(BR)DSS 450 - 2SK1156 - - , - Zero gate voltage drain current 2SK1155 IDSS - - 250 µA VDS = 360 V, VGS
Hitachi Semiconductor
Original

Hitachi DSA00395

Abstract: 2SK1155 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 , ­55 to +150 °C Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS
Hitachi Semiconductor
Original
Hitachi DSA00395 D-85622
Abstract: 2SK1155,2SK1156 Silicon N-Channel MOS FET HITACHI Application High speed power switching , (Flange) 3. Source 197 2SK1155,2SK1156 Absolute Maximum Ratings (T a = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain diode , Ratings 450 500 ±30 5 20 5 50 150 -5 5 t o +150 V A A A W °C °C Unit V HITACHI 198 2SK1155 , 2SK1155 V(BR)DSS 2SK1156 V(BR)GSS Min 450 500 ±30 - Typ - Max - Unit V Test -
OCR Scan
2SK115

2SK1155

Abstract: 2SK1156 products contained therein. 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st , G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 Ratings Unit VDSS 450 V 2SK1156 500 Gate to source voltage , Note: 2 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage
Hitachi Semiconductor
Original

Hitachi DSA002780

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , . Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to drain , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1155 V(BR)DSS
Hitachi
Original
Hitachi DSA002780

Hitachi DSA00279

Abstract: 2sk1155 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features , for switching regulator and DC-DC converter Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain , Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1155 V(BR)DSS , voltage drain current 2SK1155 I DSS 2SK1156 Gate to source cutoff voltage Static Drain to source
Hitachi
Original
Hitachi DSA00279

Hitachi DSA002712

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET November 1996 Application High speed power , . Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current Body to , Ratings 450 500 ±30 5 20 5 50 150 ­55 to +150 Unit V V A A A W °C °C 2 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1155 V(BR)DSS
Hitachi
Original
Hitachi DSA002712

2SK1155

Abstract: 2SK1155-E Ordering Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container , 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev , 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS Ratings 450 Unit V , Tstg 150 ­55 to +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source , Drain to source breakdown voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to
Renesas Technology
Original
PRSS0004AC-A

2SK1155

Abstract: DSA003638 2SK1155, 2SK1156 Silicon N-Channel MOS FET ADE-208-1247 (Z) 1st. Edition Mar. 2001 , Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SK1155 , µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155, 2SK1156 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SK1155 V(BR)DSS 450 breakdown voltage 2SK1156 Typ
Hitachi Semiconductor
Original
DSA003638
Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application TO­220AB High speed power switching , 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1155 Symbol VDSS , , duty cycle 1 % * Value at TC = 25 °C 2SK1155, 2SK1156 Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1155 Symbol V(BR)DSS Min 450 Typ - Max - Unit V , drain current 2SK1155 V(BR)GSS IGSS IDSS - 500 ±30 - - V IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS Hitachi Semiconductor
Original

2SK1155

Abstract: 2SK1155-E Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , . 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE-208-1247) Rev.2.00 Sep 07 , .2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 , +150 °C °C Drain to source voltage 2SK1155 2SK1156 Gate to source voltage Drain current , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate
Renesas Technology
Original
Abstract: 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK1155-E , Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET REJ03G0909-0200 (Previous: ADE , 2. Drain (Flange) 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1155 , temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2SK1155 2SK1156 VGSS , voltage 2SK1155 2SK1156 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr Renesas Technology
Original
Abstract: Information Part Name 2SK1155-E 2SK1156-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack , developed or manufactured by or for Renesas Electronics. 2SK1155, 2SK1156 Silicon N Channel MOS FET , . Drain (Flange) 3. Source S 3 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25°C) Item , 2SK1155 2SK1156 Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW â , voltage 2SK1155 2SK1156 Gate to source breakdown voltage Gate to source leak current Zero gate Renesas Technology
Original

k1155

Abstract: 2SK1155, 2SK1156 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed , Outline 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Unit 2 S K 1 155 , 1. PW < 1 0 (os, duty cycle < 1% 2. Value at Tc = 25°C 2 HITACHI 2SK1155, 2SK1156 , test 3 HITACHI 2SK1155, 2SK1156 Pow er vs. Tem perature Derating Maximum Safe O peration A , 2SK1155, 2SK1156 Static Drain to S ource on State 0 40 80 Forward T ransfer Adm ittance vs
-
OCR Scan
k1155

2SK1158

Abstract: 2sk1299 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5 , 2SK1151 2SK1152 2SK1153 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541
-
OCR Scan
2SK1838 2SK1880 2SK1636 2SK1315 2SK1316 2SK1342 2sk1299 2SK1341 Hitachi Scans-001 2SK1618

2sk1197

Abstract: 2SK1173 BiL SW-Reg, DDC MOS N E 500 DSS ±30 S 3 D 30 ±10« ±25 250 « 400 2 3 10 lu 1.5 2.5 10 2 2SK1155 , =30V 11 GB GDS 2SK1155 640 20 0 10 1. 5 10 2.5 ton=35ns, toff=80nstyp 1D=2. 5A, VDD=30V 116B GDS
-
OCR Scan
2SK1159 2SK1161 2SK1162 2SK1163 2SK1173 2SK1202 2sk1197 2501L NEC 2501L 2SKU60 2SK1164

2SK1313

Abstract: 2SK1155 - * Pulse Test See characteristic curves of 2SK1155, 2SK1156. 2SK1313 L , 2SK1313 S , 2SK1314
Hitachi Semiconductor
Original

flyback 200w

Abstract: 2SK1635 2SK1154 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313 2SK1314 2SK1540 2SK1541 2SK1626 2SK1159 2SK1160
-
OCR Scan
2SK579 2SK580 2SK513 2SK1770 2SK975 2SK1094 flyback 200w 2SK1635 dc dc flyback 200w 2SK119 mosfet hitachi 2SK1206 2SK1225 2SK1328 2SK11S4

2SK1637

Abstract: 2SK1151 2SK1155 450 5 50 1 1.4 4 35 80 640 2SK1156 500 1.2 1.5 TO-220AB 2SK1157 450 ±30 7 0.6 0.8 6.5
-
OCR Scan
2SK1637 2SK1624 2SK1625 2SKI647 2SK1528 2SK1667 2SK1761

2SK1637

Abstract: 2SK2097 . 190
-
OCR Scan
2SK2097 2SK series 2SK2203 1018 636 transistor+2sk 2SK+series 2SK213 2SK214 2SK215 2SK216 2SK410 2SK740
Abstract: Rl = 12 £2 1. Pulse test See characteristic curves of 2SK1155, 2SK1156. HITACHI 3 -
OCR Scan
2SK1627
Showing first 20 results.