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Part : 2SK1120(F,T) Supplier : Toshiba Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : 2SK1120 Supplier : Toshiba Manufacturer : Chip One Exchange Stock : 87 Best Price : - Price Each : -
Part : 2SK1120(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 410 Best Price : $14.20 Price Each : $17.60
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2SK1120 Datasheet

Part Manufacturer Description PDF Type
2SK1120 Toshiba TRANS MOSFET N-CH 1000V 8A 3(2-16C1B) Original
2SK1120 Toshiba Power MOSFETs Cross Reference Guide Original
2SK1120 Toshiba N-Channel MOSFET Original
2SK1120 Toshiba Original
2SK1120 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SK1120 N/A Catalog Scans - Shortform Datasheet Scan
2SK1120 N/A Catalog Scans - Shortform Datasheet Scan
2SK1120 N/A Catalog Scans - Shortform Datasheet Scan
2SK1120 N/A Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan
2SK1120 Toshiba Silicon N channel field effect transistor for high speed, high current switching applications, DC-DC converter and motor drive applications Scan
2SK1120 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(pi-MOSII.5) Scan
2SK1120(F) Toshiba 2SK1120 - TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power Original
2SK1120(F,T) Toshiba 2SK1120 - Trans MOSFET N-CH 1KV 8A 3-Pin TO-3P(W) T/R Original

2SK1120

Catalog Datasheet MFG & Type PDF Document Tags

k1120

Abstract: TRANSISTOR k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High , 2SK1120 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ , finish. 2 2004-07-06 2SK1120 3 2004-07-06 2SK1120 4 2004-07-06 2SK1120 5 2004-07-06 2SK1120 RESTRICTIONS ON PRODUCT USE 030619EAA · The information contained herein is
Toshiba
Original
k1120 TRANSISTOR k1120 Toshiba 2sk1120 TRANSISTOR k1120 Package 2-16C1B

2SK1120

Abstract: k1120 2SK1120 東èé›»ç•Œå¹æžãƒãƒ©ãƒ³ã'¸ã'¹ã'¿ ã'·ãƒªã'³ãƒ³Nチャãƒãƒ«MOSå½¢ (Ï'â'MOSâ¡.5) 2SK1120 â—' ã'¹ã'¤ãƒƒãƒãƒ³ã'°ãƒ¬ã'®ãƒ¥ãƒ¬ãƒ¼ã'¿ç"¨ å˜ä½: mm : RDS ( ON ) = 1.5Ω (æ¨™æº , 2006-11-09 2SK1120 電気çš"特æ'§ (Ta = 25°C) é ç›® ã'² ド ー レ ムã'¤ 記号 æ , '¯ (なし: é‰›å«æ‰ ã'ã': 鉛フリー) 2 2006-11-09 2SK1120 3 2006-11-09 2SK1120 4 2006-11-09 2SK1120 5 2006-11-09 2SK1120 å½"社åå°ä½"製å"åã'扱ã"ä¸ã
Toshiba
Original
SC-65

TRANSISTOR k1120

Abstract: k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications l Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) l , . 1 2002-09-02 2SK1120 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , christian era) 2 2002-09-02 2SK1120 3 2002-09-02 2SK1120 4 2002-09-02 2SK1120 5 2002-09-02 2SK1120 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
power device k1120

k1120

Abstract: TRANSISTOR k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High , 2009-09-29 2SK1120 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK1120 3 2009-09-29 2SK1120 4 2009-09-29 2SK1120 5 2009-09-29 2SK1120 RESTRICTIONS ON PRODUCT
Toshiba
Original

2SK1120 DATA

Abstract: 2SK1120 SEM ICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TO SH IBA 2SK1120 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ( 7T- M O S II · 5) (2SK1120) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX 032 , CORPORATION SEM ICONDUCTOR TO SH IBA 2SK1120 DATA TECHNICAL (2SK1120) ELECTRICAL , SH IBA 2SK1120 DATA TECHNICAL (2SK1120) rth - tv DYNAMIC INPUT/OUTPUT
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OCR Scan
2SK1120 DATA 2SK112

TRANSISTOR k1120

Abstract: 2sk1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) .5 2SK1120 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance Low , handle with caution. 1 2002-06-05 2SK1120 Electrical Characteristics (Tc = 25 , Month (starting from alphabet A) Year (last number of the christian era) 2 2002-06-05 2SK1120 3 2002-06-05 2SK1120 4 2002-06-05 2SK1120 5 2002-06-05 2SK1120
Toshiba
Original

k1120

Abstract: TRANSISTOR k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High , 2002-09-02 2SK1120 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , christian era) 2 2002-09-02 2SK1120 3 2002-09-02 2SK1120 4 2002-09-02 2SK1120 5 2002-09-02 2SK1120 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
transistor 2SK1120 power transistor k1120

TRANSISTOR k1120

Abstract: k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.5 (typ.) : |Yfs| = 4.0 S (typ.) Unit: mm , device. Please handle with caution. 1 2006-11-09 2SK1120 Electrical Characteristics (Ta = 25 , 2SK1120 3 2006-11-09 2SK1120 4 2006-11-09 2SK1120 5 2006-11-09 2SK1120
Toshiba
Original

2SK1120

Abstract: SC-65 TOSHIBA 2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII-5) 2SK1120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS â , information contained herein is subject to change without notice. 1997-12-11 1/5 TOSHIBA 2SK1120 , (Starting from Alphabet A) I-Year (Last Number of the Christian Era) 1997-12-11 2/5 TOSHIBA 2SK1120 id - , 2SK1120 RDS(ON) - Te IDR - VDS °o M w S « iD« o W COMMON SOURCE vGS=iov
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OCR Scan
toshiba l40 961001EAA2

K1120

Abstract: TRANSISTOR k1120 2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1120 DC-DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High , 2006-11-09 2SK1120 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , lead (Pb)-free finish. 2 2006-11-09 2SK1120 3 2006-11-09 2SK1120 4 2006-11-09 2SK1120 5 2006-11-09 2SK1120 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information
Toshiba
Original

2SK1120

Abstract: TOSHIBA_2SK1120 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (tt-MOSII5) 2SK1120 , 2SK1120 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , Christian Era) 1998-07-24 2/5 TOSHIBA 2SK1120 id - VDS id - VDS COMMON SOURCE Tc = 25°C 15 y Xà , 2SK1120 RDS(ON) - Te IDR - VDS £ °o M w o g iD« O W COMMON SOURCE vGS=iov , 1998-07-24 4/5 TOSHIBA 2SK1120 rth - tw PULSE WIDTH tw (s) DYNAMIC INPUT/OUTPUT CHARACTERISTICS SAFE
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OCR Scan

transistor 2SK1120

Abstract: CL226 TOSHIBA 2SK1120 Field Effect Transistor Silicon N Channel MOS Type (rc-MOS II) High Speed, High , AMERICA ELECTRONIC COMPONENTS, INC. 223 2SK1120 Discrete Semiconductors Electrical C h ara c , . Discrete Semiconductors 2SK1120 id - v o s COM M ON SOURCE Te « 26°C Id - V o s I , 2SK1120 Discrete Semiconductors RDS(ON) - Tc IDR - Vos DRAIN-SOURCE O N RDS(ON) R ESISTA , ("Cl 226 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Discrete Semiconductors 2SK1120 r
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OCR Scan
CL226

transistor 2SK1120

Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M OSII -5) 2SK1120 , notice. 1997 12-11 - 1/5 TOSHIBA 2SK1120 ELECTRICAL CHARACTERISTICS (Ta = 25°C) C H A R , 12-11 - 2/5 TOSHIBA 2SK1120 id - vds id - vds D R A IN -SO U R C E V O LTA , « GATE-SOURCE VOLTAGE V os (V) 1997 12-11 - 3/5 TOSHIBA 2SK1120 Rd s (ON) - Te u £ s U 3 , o X § X H Ed h < o CASE TEMPERATURE Tc CC) 1997 12-11 - 4/5 TOSHIBA 2SK1120
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OCR Scan
Abstract: TOSHIBA TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANN EL MOS TYPE ( tt- M O S I I -5) 2SK1120 2 S K 1 120 HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS DC-DC CONVERTER A N D M O TO R , ith o u t notice. # # 1997 - 12-11 1/5 TOSHIBA 2SK1120 ELECTRICAL , hristian Era) -Year 1997 - 12-11 2/5 TOSHIBA 2SK1120 id - vds id - , S J a a VOLTAGE a HH S H 1 -
OCR Scan
961001EA
Abstract: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ( tt-M O S II5) 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE , w ith o u t notice. 1998 07-24 - 1/5 2SK1120 T O SH IB A ELECTRICAL CHARACTERISTICS , from Alphabet A) '-Year (Last Num ber of the C hristian Era) - 2SK1120 T O SH IB , |SJ CO 7^ Dì ISJ O 2SK1120 T O SH IB A r th â'" W PULSE WIDTH t* (s -
OCR Scan

2SK1143

Abstract: 2SK1142 -1000 GDR ±20 0 4 D 100 ±100n ±20 0. 3m 800 1.5 3.5 10 Im 1 2 20 2 2SK1120 MS SW Reg MOS N e -1000 , 10 4 184 GDS 2SK1120 4000 0.03 10 13 215 CDS 2SK1121 3300 200 0 10 ton
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OCR Scan
2SK1105 2SK1108 2SK1109 2SK1115 2SK1117 2SK1118 2SK1143 2SK1142 2SK1139 2SK1138 2SKU12 2SK1113 2SK1114

2SK2056

Abstract: 2SK1603 2SK1358 2SK1119 2SK1930 2SK1359 2SK1365 2SK1120 2SK1489 < 0 (A) 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5
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OCR Scan
2SK2056 2SK2222 2SK1603 2SK1601 2SK1692 2sk2039 2sk2077 2sk231 2SK2274 2SK1602 2SK1600 2SK1858 2SK2089

transistor 2SK1603

Abstract: 2SK1603 2SK2038[2.2] A 2SK1362[2.5] · A 2SK1119[3.8] 2SK1359[3.8] 2SK1365[1.8] 2SK1120[1.8] A 9 TO
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OCR Scan
2SK1723 transistor 2SK1603 transistor 2sk1723 2sk16 MOSFET 2SK1358 Transistor Guide toshiba transistor smd code T0-220 T0-220N 2SK1488 2SK1865SM 2SK1531 2SK1745
Abstract: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (nr-MOSn) HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. 2SK1120 INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. FEATURES: ·Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.) ·High Forward Transfer Admittance : I Y f s I =4.OS (Typ.) · Low Leakage Current : I DSS= 300 >uA(Hax. ) § V DS=800V · Enhancement-Mode : V th=1.5-3 .5V 0 VDS=10V, I D=1roA A J 0 Z.ZÌQ .2 rQ i + > -qeeeI- f c of oîj o| fCJ 2.o±o.3 1 -
OCR Scan

2SK2030

Abstract: 2SJ239 MOSFET Characteristic Chart M axim u m R ating Type No. P ackag e Id |Am ps| V oss R d s (ON) TYP. [Ohm s| M AX. lO hm sI V qs [Volts] Id [Amps] Vtn (Volts] | ID - 1 mA] A p plicatio n [Volts] Pd [W atts] 2SJ147 2SJ201-Y 2SJ238(TE12L) 2SJ239 2SJ239(LB) 2SJ240 2SJ241(SM) 2SJ312(SM) 2SK1078(TE12L) 2SK1079(TE12L) 2SK1112(LB,STA1) 2SK1113 2SK1118 2SK1119 2SK1120 2SK1345 2SK1346 2SK1348 2SK1356 2SK1358 2SK1359 2SK1362 2SK1363 2SK1365 2SK1380 2SK1488 2SK1489 2SK1530-Y 2SK1531 2SK1544 2SK1641 2SK1653
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OCR Scan
2SK2030 2SK2057 2SJ201Y 2sk1 2SK2200TP 2SK1717 2SK1719 2SK1767 2SK1768 2SK1769 2SK1792

2sj239

Abstract: TE12L 2SK1358 2SK1119 2SK1930 2SK1359 2SK1365 2SK1120 2SK1489 < 0 (A) 5 2.8 3 3 4 5 5 5 7 7 9 8.5 2.5 3 5 5 5 5
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OCR Scan
2SK945 2SK1913 2SJ239LB k1119 T0220FL 2SJ201 2SJ312SM 2SK1928SM T0-220FL/SM 2SK1805
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