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2SK1058-E Renesas Electronics Corporation 2SK1058-E visit Digikey

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2SK105 Datasheet

Part Manufacturer Description PDF Type
2SK105 InterFET N-Channel silicon junction field-effect transistor Original
2SK105 NEC Semiconductor Selection Guide 1995 Original
2SK105 NEC Small Signal FET(Junction type) AF amplification Original
2SK105 N/A Shortform Transistor PDF Datasheet Scan
2SK105 N/A Semiconductor Master Cross Reference Guide Scan
2SK105 N/A FET Data Book Scan
2SK105 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SK1050 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1050 N/A FET Data Book Scan
2SK1051 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1051 N/A FET Data Book Scan
2SK1052 Sanyo Semiconductor Power MOSFETs(N channel) Original
2SK1052 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1052 N/A FET Data Book Scan
2SK1053 Sanyo Semiconductor Power MOSFETs(N channel) Original
2SK1053 N/A FET Data Book Scan
2SK1053 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SK1056 Hitachi Semiconductor Silicon N Channel MOS FET Original
2SK1056 Hitachi Semiconductor Silicon N-Channel MOS FET Original
2SK1056 Hitachi Semiconductor Mosfet Guide Original
Showing first 20 results.

2SK105

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: I I I I Transistori Q1 2 S A 1 2 0 6 (NEC) Q2 2SA1206 Q3 2SK105 Q4 2SK105 Q5 2 S C 2 4 0 8 (NEC -
OCR Scan
2SC2408 1S1587 HD10116 Transformer - 12-0-12, 1 mA 358P LSE transformer 1SS97 RC 5612 FCX20220A-1/-2 NEB9640-HP MC10176
Abstract: NEC ElfCTOON DEVICE DESCRIPTIO N N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SK105 The 2SK105 is designed fo r use in analog-switch, variable-resistor and A F am plifier. PAC KAG E D IM EN SIO N S in m illim e te rs (in che s) A BS O LU TE M A X IM U M R A TIN G S (Ta = 25°C) M axim um Temperature Storage Tem perature Junction Tem perature . . - 5 5 to + 1 2 5 ° C +125 C M axim um M axim um Power D issipation (Ta = 25°C) Total Power -
OCR Scan
2SK105 F 2SK105 E SC-43
Abstract: E 2 9_g7 SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel BVgss ig = - 1.0 ma V Min -20 -50 -30 -50 'gss Vgs = (),Vds = 0 nA Max 0.10 (-10V) 1.0 (- 30 V) 1.0 (-10V) 1.0 (â'" 30 V) VGS(off) Vos = 0, Id = 1-OnA V Min/Max -0.5/-6.0 (10 V) - 0.4/- 5.0 (15 V) - 0.4/- 5.0 (10V) -0.25/-4.5 (5.0 V) Idss Vds = (),Vgs = 0 mA Min/Max 0.3/6.5 (10V -
OCR Scan
2SK59 SGD 2SK40 SGD 2SK17 SGD interfet
Abstract: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 uA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø InterFET
Original
2SK105 Datasheet to-226aa 2sk105 jfet TO226AA NJ16 226AA
Abstract: E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS 9-97 Japanese InterFET Process Parameters BVg ss 2SK17 IFN17 NJ16 2SK40 IFN40 NJ16 2SK59 IFN59 NJ16 2SK105 IFN105 NJ16 Conditions Unit Limit V Min nA Max N Channel -2 0 N Channel -5 0 1.0 N Channel -3 0 1.0 ( - i o V) N Channel -5 0 Iq = Vgs - 1.0 [ik IGS S V GS (off) I DSS g fs C ¡ss C rss = 0, Vds = 0 ( - 10 V) 0.10 (- 30 -
OCR Scan
aX 010
Abstract: D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = ­ 1.0 uA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ InterFET
Original
2SK105 DGS 2sj44 V6010 2SK152 IFN152 NJ132L 2SK363 IFN363 NJ450
Abstract: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0 -5 0 -3 0 -5 0 1.0 Parameters Conditions BVg sS I g = - 1 .0 (JA V M in IG S S Vgs = ( ) , V ds = 0 nA Max 0.10 ( - 1 0 V) (- 30 V -
OCR Scan
Abstract: TP3822 2N3822 2N4139 2SK514K 2SK105 2SK105 2SK68 2SK68A 2SK68A 2SK68AN 2SK68N 2SK246 2SK330 2SK117BL Advanced Semiconductor
Original
2N3069A UC240 nec 2sk163 2SK163 TO92 2sk163 2SK117-BL 2SK523M 2N3069 NDF9406 NDF9407 NDF9408 NDF9409
Abstract: - 32 - m. 2SK84 2SK85 2SK87 (H) 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK11T 2SK118 2SK119 2SK120 2SK121 2SK123 2SK124 2SK125 2SK127 2SK127A % tt ffl ÌÉ m & f ;E Y * 1 K Ä V* ^ $ fë P d/Pc h ft (A) 10 b G 100m D (W) 100m 500m 100m -lOn -3 0 Ig s s (max) (A) -lOOn Vg s (V) - 30 (min , 18 S G D 6 2 A DG S 78 49 D u a l F E T 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 2SK105 2SK106 2SK107 -
OCR Scan
FET 2SK125 FET 2SK109 100MH
Abstract: Datasheet 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500 InterFET
Original
J555 2N4221 transistor J231 transistor j556 j557 2N3954 2N3955 2N3956 2N3957 2N3958 2N4220
Abstract: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = ­ 1.0 uA V Min ­ 20 ­ 50 ­ 30 ­ 50 ­ 50 IGSS VGS = ( ), VDS = Ø InterFET
Original
2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet IFN147
Abstract: Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119 2SK120 2SK121 2SK122 2SK123 2SK124 2SK125 2SK126 2SK127 2SK128 2SK129 2SK130 2SK131 2SK132 2SK133 2SK134 2SK135 2SK136 2SK137 2SK137A 2SK138 2SK139 2SK140 2SK141 2SK141A mode (V) 15 GDO -
Original
2sk150 datasheet 2SK107 data sheet 2SK182E 2sk185 datasheet 2SK150 2SK160A 2SK197 2SK198 2SK199
Abstract: Transistor Field Effect Transistor Small Signal FET s 2SK type (Junction type) Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104 TO-92 30 20 250 2.5 2SK105 TO-92 50 20 250 2.1 2.5 AF , 35 10 8.0 6 4 8.0 0.07 0.1 2SK1059 MP-3 60 ±5 ±20 20 10 3.0 NEC
Original
2SK195 2SK505 2SK518 2sk1060 2SK type transistor 2sk transistor 2sk193 transistor 2sk162 transistor SST 250 2SK162 2SK193 2SK507 2SK514
Showing first 20 results.