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| Part | Manufacturer | Description | Datasheet | BUY |
|---|---|---|---|---|
| 2SK1058-E | Renesas Electronics Corporation | 2SK1058-E |  |
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2SK105 Datasheet
| Part | Manufacturer | Description | Type | |
|---|---|---|---|---|
| 2SK105 | InterFET | N-Channel silicon junction field-effect transistor |
|
Original |
| 2SK105 | NEC | Semiconductor Selection Guide 1995 |
|
Original |
| 2SK105 | NEC | Small Signal FET(Junction type) AF amplification |
|
Original |
| 2SK105 | N/A | Shortform Transistor PDF Datasheet |
|
Scan |
| 2SK105 | N/A | Semiconductor Master Cross Reference Guide |
|
Scan |
| 2SK105 | N/A | FET Data Book |
|
Scan |
| 2SK105 | N/A | Shortform Data and Cross References (Misc Datasheets) |
|
Scan |
| 2SK1050 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SK1050 | N/A | FET Data Book |
|
Scan |
| 2SK1051 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SK1051 | N/A | FET Data Book |
|
Scan |
| 2SK1052 | Sanyo Semiconductor | Power MOSFETs(N channel) |
|
Original |
| 2SK1052 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SK1052 | N/A | FET Data Book |
|
Scan |
| 2SK1053 | Sanyo Semiconductor | Power MOSFETs(N channel) |
|
Original |
| 2SK1053 | N/A | FET Data Book |
|
Scan |
| 2SK1053 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SK1056 | Hitachi Semiconductor | Silicon N Channel MOS FET |
|
Original |
| 2SK1056 | Hitachi Semiconductor | Silicon N-Channel MOS FET |
|
Original |
| 2SK1056 | Hitachi Semiconductor | Mosfet Guide |
|
Original |
Showing first 20 results. Show More |
2SK105
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
2sk105Abstract: HD10116 I I I I Transistori Q1 2 S A 1 2 0 6 (NEC) Q2 2SA1206 Q3 2SK105 Q4 2SK105 Q5 2 S C 2 4 0 8 (NEC |
- OCR Scan |
|
2SC2408 1S1587 HD10116 Transformer - 12-0-12, 1 mA 358P LSE transformer RC 5612 1SS97 FCX20220A-1/-2 NEB9640-HP MC10176 |
2SK105Abstract: 2SK105 F NEC ElfCTOON DEVICE DESCRIPTIO N N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SK105 The 2SK105 is designed fo r use in analog-switch, variable-resistor and A F am plifier. PAC KAG E D IM EN SIO N S in m illim e te rs (in che s) A BS O LU TE M A X IM U M R A TIN G S (Ta = 25°C) M axim um Temperature Storage Tem perature Junction Tem perature . . - 5 5 to + 1 2 5 ° C +125 C M axim um M axim um Power D issipation (Ta = 25°C) Total Power |
- OCR Scan |
|
2SK105 F 2SK105 E SC-43 |
2SK105Abstract: 2SK59 SGD E 2 9_g7 SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel BVgss ig = - 1.0 ma V Min -20 -50 -30 -50 'gss Vgs = (),Vds = 0 nA Max 0.10 (-10V) 1.0 (- 30 V) 1.0 (-10V) 1.0 (â'" 30 V) VGS(off) Vos = 0, Id = 1-OnA V Min/Max -0.5/-6.0 (10 V) - 0.4/- 5.0 (15 V) - 0.4/- 5.0 (10V) -0.25/-4.5 (5.0 V) Idss Vds = (),Vgs = 0 mA Min/Max 0.3/6.5 (10V |
- OCR Scan |
|
2SK59 SGD 2SK40 SGD interfet 2SK17 SGD |
2SK105 DatasheetAbstract: 2SK105 Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = 1.0 µA V Min 20 50 30 50 50 IGSS VGS = ( ), VDS = Ø |
InterFET Original |
|
2SK105 Datasheet to-226aa 2sk105 jfet TO226AA NJ16 226AA |
2SK105Abstract: 2SK105 F E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS 9-97 Japanese InterFET Process Parameters BVg ss 2SK17 IFN17 NJ16 2SK40 IFN40 NJ16 2SK59 IFN59 NJ16 2SK105 IFN105 NJ16 Conditions Unit Limit V Min nA Max N Channel -2 0 N Channel -5 0 1.0 N Channel -3 0 1.0 ( - i o V) N Channel -5 0 Iq = Vgs - 1.0 [ik IGS S V GS (off) I DSS g fs C ¡ss C rss = 0, Vds = 0 ( - 10 V) 0.10 (- 30 |
- OCR Scan |
|
aX 010 |
2SK105 DGSAbstract: 2SK105 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process Parameters Conditions Unit Limit 2SK17 IFN17 NJ16 N Channel 2SK40 IFN40 NJ16 N Channel 2SK59 IFN59 NJ16 N Channel 2SK105 IFN105 NJ16 N Channel BVGSS IGSS VGS(off) IDSS gfs Ciss Crss IG = 1.0 µA VGS = ( ), VDS = Ø VDS = ( ), ID = 1.0 nA VDS = ( ), VGS = Ø VDS = ( ), VGS = Ø VGS = ( ), VDS = ( ) VGS = ( ), VDS = ( ) V Min nA Max V Min/Max mA Min/Max mS Typ pF Typ |
InterFET Original |
|
2SK105 DGS V6010 2sj44 2SK152 IFN152 NJ132L 2SK363 IFN363 NJ450 |
| Abstract: E2 9-97 Japanese Equivalent JFET Types_ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFNI 05 Process NJ16 NJ16 N J16 NJ16 Unit Limit N N N N Channel Channel Channel Channel -2 0 -5 0 -3 0 -5 0 1.0 Parameters Conditions BVg sS I g = - 1 .0 (JA V M in IG S S Vgs = ( ) , V ds = 0 nA Max 0.10 ( - 1 0 V) (- 30 V |
- OCR Scan |
|
|
2SK117BLAbstract: nec 2sk163 TP3822 2N3822 2N4139 2SK514K 2SK105 2SK105 2SK68 2SK68A 2SK68A 2SK68AN 2SK68N 2SK246 2SK330 2SK117BL |
Advanced Semiconductor Original |
|
2N3069A UC240 nec 2sk163 2sk163 2SK163 TO92 2SK117-BL 2SK523M 2N3069 NDF9406 NDF9407 NDF9408 NDF9409 |
FET 2SK125Abstract: FET 2SK109 - 32 - m. 2SK84 2SK85 2SK87 (H) 2SK89 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK11T 2SK118 2SK119 2SK120 2SK121 2SK123 2SK124 2SK125 2SK127 2SK127A % tt ffl ÌÉ m & f ;E Y * 1 K Ä V* ^ $ fë P d/Pc h ft (A) 10 b G 100m D (W) 100m 500m 100m -lOn -3 0 Ig s s (max) (A) -lOOn Vg s (V) - 30 (min , 18 S G D 6 2 A DG S 78 49 D u a l F E T 2SK92 2SK93 2SK94 2SK97 2SK103 2SK104 2SK105 2SK106 2SK107 |
- OCR Scan |
|
FET 2SK125 FET 2SK109 100MH |
J555Abstract: 2SK40 Datasheet 2SK17, 2SK40 2SK59, 2SK105 IFN17, IFN40 IFN59, IFN105 J201, J202 J203, J204 J230, J231 J232 J500 |
InterFET Original |
|
J555 j556 2N4221 transistor J231 transistor j557 2N3954 2N3955 2N3956 2N3957 2N3958 2N4220 |
2SK146Abstract: 2SK147 equivalent Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions Unit Limit N Channel N Channel N Channel N Channel N Channel BVGSS IG = 1.0 µA V Min 20 50 30 50 50 IGSS VGS = ( ), VDS = Ø |
InterFET Original |
|
2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet IFN147 |
2sk129Abstract: 2sk150 datasheet Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119 2SK120 2SK121 2SK122 2SK123 2SK124 2SK125 2SK126 2SK127 2SK128 2SK129 2SK130 2SK131 2SK132 2SK133 2SK134 2SK135 2SK136 2SK137 2SK137A 2SK138 2SK139 2SK140 2SK141 2SK141A mode (V) 15 GDO |
- Original |
|
2sk150 datasheet 2SK107 data sheet 2SK182E 2sk185 datasheet 2SK150 2SK160A 2SK197 2SK198 2SK199 |
2sk1060Abstract: 2SK type Transistor Field Effect Transistor Small Signal FET s 2SK type (Junction type) Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104 TO-92 30 20 250 2.5 2SK105 TO-92 50 20 250 2.1 2.5 AF , 35 10 8.0 6 4 8.0 0.07 0.1 2SK1059 MP-3 60 ±5 ±20 20 10 3.0 |
NEC Original |
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2SK195 2SK505 2SK518 2sk1060 2SK type transistor 2sk transistor 2sk193 transistor 2sk162 transistor SST 250 2SK162 2SK193 2SK507 2SK514 |
Showing first 20 results. Show More |