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Part : 602SJR00500E-T Supplier : Ohmite Manufacturer : Master Electronics Stock : 2,000 Best Price : $0.6968 Price Each : $1.71
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Part : 7022SJ Supplier : TE Connectivity Manufacturer : Sager Stock : - Best Price : $380.55 Price Each : $540.15
Part : 2SJ652 Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 4 Best Price : $2.65 Price Each : $2.65
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2SJ77 Datasheet

Part Manufacturer Description PDF Type
2SJ77 Hitachi Semiconductor Silicon P-Channel MOS FET Original
2SJ77 Hitachi Semiconductor Silicon P-Channel MOS FET Original
2SJ77 Hitachi Semiconductor Silicon P-Channel MOS FET Original
2SJ77 Renesas Technology Silicon P Channel MOS FET Original
2SJ77 Hitachi Semiconductor Silicon P-Channel MOS FET Scan
2SJ77 Hitachi Semiconductor Power Transistors Data Book Scan
2SJ77 N/A Shortform Datasheet & Cross References Data Scan
2SJ77 N/A Catalog Scans - Shortform Datasheet Scan
2SJ77 N/A Catalog Scans - Shortform Datasheet Scan
2SJ77 N/A Semiconductor Master Cross Reference Guide Scan
2SJ77 N/A Scan
2SJ77 N/A FET Data Book Scan
2SJ77-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 160V 0.5A TO-220 Original
2SJ77K Hitachi Semiconductor Silicon P-Channel MOSFET Scan
2SJ77K N/A Shortform Transistor PDF Datasheet Scan
2SJ77K N/A Shortform Datasheet & Cross References Data Scan
2SJ77(K) N/A FET Data Book Scan
2SJ77K N/A Semiconductor Master Cross Reference Guide Scan

2SJ77

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SJ76,2SJ77,2SJ78,2SJ79 Silicon P-Channel MOS FET HITACHI Application High frequency and low , source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse , breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to , = Ciss Crss - - - 1 MHz HITACHI 150 2SJ76,2SJ77,2SJ78,2SJ79 Typical , ) HITACHI 151 2SJ76,2SJ77,2SJ78,2SJ79 Forward Transfer Admittance vs. Drain Current w 200 E D -
OCR Scan
2SK213 2SK214 2SK215 2SK216
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Application High frequency and low frequency power amplifier, high , . Source (Flange) 3. Drain This Material Copyrighted By Its Respective Manufacturer 2SJ76, 2SJ77, 2SJ78 , VDSX -140 V 2SJ77 -160 2SJ78 -180 2SJ79 -200 Gate to source voltage ^GSS  , , lD = -1 mA breakdown voltage 2SJ77 -160 â'" â'" V 2SJ78 -180 â'" â'" V 2SJ79 -200 â'" â'" V , Manufacturer 2SJ76, 2SJ77, 2SJ78, 2SJ79 Power vs. Temperature Derating Typical Output Characteristics 50 -
OCR Scan
Hitachi Scans-001 PC-H-130
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET November 1996 Application High frequency , (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse , source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage , mA 2 2SJ76, 2SJ77, 2SJ78, 2SJ79 Power vs. Temperature Derating 60 Channel Dissipation Pch (W Hitachi
Original
2SK213 2Sk214 Hitachi 2SJ Hitachi DSA002751 D-85622
Abstract: HITACHI/íOPTOELECTRONICS} tmW^-H I TAÃffTTTDPf OÃ'LbC l UuNÃCS ) ; 2SJ77(£),2SJ7Q(g) SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK214 , .*. in mnil (JEDEC TO-220AB) ABSOLUTE MAXIMUM RATINGS {Tc=25 °C) Item Symbol Ratings Unit 2SJ77 , Symbol Test Condition min. typ. max. Unit Drain-Source Breakdown 2SJ77® VlMMiDSX /d=â'"1mA. Vas=2V -160 , - 4.8 - pF HITACHI 61 i HITACHI/-COPTOELECTRONICS]- ï 2SJ77 2SJ79 ®-â'" ~73 Ã>F| 44Tt,50S 000^44 -
OCR Scan
tr2b T-59-/9
Abstract: 2SJ77 Bit LF D, HS PSW MOS P E -160 DSX ±15 s -500m D 30 -0. 2 -1. 5 -10 -10m 20m 35m -20 -10m 2SJ77 CK) B iL HF PA. HS PSW MOS P E -160 DSX ±15 s -500m D 30 -0. 2 -1.5 -10 -10m 20m 35m -20 , =0 2SK214 116A GSD 2SJ77 120 4.8 -10 VDS(sat)=-2Vmax ID=-10mA, VGD=0 116A GDS,ft#2SJ77 2SJ77(K -
OCR Scan
2SJ69 2SJ72 2SJ73 2SJ74 2SJ75 2SJ82 2SJ99 2SJ96 2SJ83 2SJ92 2SJ70
Abstract: 2SJ76,2SJ77,2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High , 2 3 1. Gate 2. Source (Flange) 3. Drain OS 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum , 0 V 2SJ77 -1 6 0 2SJ78 -1 8 0 2SJ79 -2 0 0 Gate to source voltage ^G S S , Drain to source 2SJ76 breakdown voltage 2SJ77 -1 6 0 â'" â'" V 2SJ78 -1 8 0 , PF f = 1 MHz Note 1. Pulse test 2 HITACHI 2SJ76, 2SJ77, 2SJ78, 2SJ79 Typical O -
OCR Scan
Abstract: Part Name Quantity Shipping Container 2SJ76-E 2SJ77-E 500 pcs 500 pcs Box (Sack) Box , 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE , (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77, 2SJ78 , Value ­140 2SJ77 2SJ78 ­160 ­180 2SJ79 VGSS Channel temperature Storage temperature , V 2SJ77 2SJ78 ­160 ­180 - - - - V V 2SJ79 Gate to source breakdown Renesas Technology
Original
PRSS0004AC-A 2SJ79E 2sj79-e ADE-208-1179
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 (Z) 1st. Edition Mar. 2001 , 1 2 3 1. Gate 2. Source (Flange) 3. Drain G S 2SJ76, 2SJ77, 2SJ78, 2SJ79 , Ratings ­140 V 2SJ77 ­160 2SJ78 ­180 2SJ79 ­200 Gate to source voltage VGSS , 2SJ77 ­160 - - V 2SJ78 ­180 - - V 2SJ79 ­200 - - V , - 4.8 - pF f = 1 MHz Note: 2 1. Pulse test 2SJ76, 2SJ77, 2SJ78, 2SJ79 Hitachi Semiconductor
Original
DSA003638 P-Channel Enhancement FET
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source voltage Drain current Body to drain diode reverse drain current , voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage Drain to source , , 2SJ77, 2SJ78, 2SJ79 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Typical Output Hitachi
Original
Hitachi DSA002780
Abstract: HITACHI HITACHI 2SJ76,2SJ77, 2SJ78,2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY ,   ABSOLUTE MAXIMUM RATINGS (Taâ'"25 °C) Item Symbol Ratings Unit 2SJ76 2SJ77 2S.'7H 2SJ7 , VrMiÃlJT Vt,-j=2V. V-JmA -140 â'" â'" V 2SJ77 -IfiO â'" V 2SJ78 â'"180 â'" â'" V 2SJ79 -200 - , "Pulse Tes) HITACHI 2SJ76,2SJ77,2SJ78,2SJ79 - TYPICAL OUTPUT CHARACTERISTICS TYPICAL OUTPUT -
OCR Scan
Hitachi transistor hitachi S Mosfet Mosfet transistor hitachi hitachi mosfet mosfet hitachi
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , Excellent frequency response Enhancement-mode Outline 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum , V 2SJ77 ­160 2SJ78 ­180 2SJ79 ­200 Gate to source voltage VGSS ±15 V , - V VGS = 2 V, ID = ­1 mA Drain to source 2SJ76 breakdown voltage 2SJ77 ­160 , pF f = 1 MHz Note: 2 1. Pulse test 2SJ76, 2SJ77, 2SJ78, 2SJ79 3 2SJ76, 2SJ77 Hitachi
Original
Hitachi DSA00398 2SJ77 hitachi PCH-1
Abstract: products contained therein. 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 (Z , 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 Ratings ­140 V 2SJ77 ­160 2SJ78 ­180 2SJ79 ­200 , 2SJ76 breakdown voltage 2SJ77 ­160 - - V 2SJ78 ­180 - - V 2SJ79 , , 2SJ77, 2SJ78, 2SJ79 Typical Output Characteristics Power vs. Temperature Derating ­500 ­4.5 Hitachi Semiconductor
Original
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET HITACHI November 1996 Application High , Absolute M a x im u m Ratings (Ta = 25°C) Item Drain to source voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to , source breakdown voltage 2SJ76 2SJ77 2SJ78 2SJ79 Gate to source breakdown voltage Gate to source voltage , MHz 2 HITACHI 2SJ76, 2SJ77, 2SJ78, 2SJ79 Power vs. Temperature Derating Typical Output , -100 -200 Drain Current lD (mA) 3 HITACHI 2SJ76, 2SJ77, 2SJ78, 2SJ79 Forward Transfer -
OCR Scan
HITACHI 2SJ* TO-3
Abstract: 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , . Source (Flange) 3. Drain G S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 Ratings ­140 V 2SJ77 , V VGS = 2 V, ID = ­1 mA Drain to source 2SJ76 breakdown voltage 2SJ77 ­160 - , pF f = 1 MHz Note: 2 1. Pulse test 2SJ76, 2SJ77, 2SJ78, 2SJ79 Typical Output Hitachi Semiconductor
Original
Hitachi DSA00396
Abstract: HITACHI 2SJ76,2SJ77, 2SJ78,2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY POWER AMPLIFIER, HIGH SPEED POWER SWITCHING Complementary Pair with 2SK213, 2SK214, 2SK215, 2SK216 â , MAXIMUM RATINGS (7^=25 °C) Item Symbol Ratings Unit 2SJ76 2SJ77 2ív'7H ZSJT? Drain-Source , VtAAWIX VGS=2\. /p^-JmA -140 â'" â'" V 2SJ77 -160 â'" â'" V 2SJ7S -180 â'" â'" V 2SJ79 -200 - , » Tes» HITACHI 2SJ76,2SJ77,2SJ78,2SJ79 TYPICAL OUTPUT CHARACTERISTICS TYPICAL OUTPUT CHARACTERISTICS -
OCR Scan
2SJ130 200V 50A mos fet diode sy 171 diodo t1 2SJ13
Abstract: 2SJ76-E 2SJ77-E 500 pcs 500 pcs Box (Sack) Box (Sack) 2SJ78-E 2SJ79-E 500 pcs 500 pcs , developed or manufactured by or for Renesas Electronics. 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel , , 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSX 2SJ76 Value â'"140 2SJ77 2SJ78 â'"160 â , Drain to source breakdown voltage Min â'"140 Typ â'" Max â'" Unit V 2SJ77 2SJ78 Renesas Technology
Original
Abstract: Quantity Shipping Container 2SJ76-E 2SJ77-E 500 pcs 500 pcs Box (Sack) Box (Sack) 2SJ78 , . 2SJ76, 2SJ77, 2SJ78, 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 (Previous: ADE-208-1179) Rev , . Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76, 2SJ77, 2SJ78, 2SJ79 , ­140 2SJ77 2SJ78 ­160 ­180 2SJ79 VGSS Channel temperature Storage temperature ­500 , V 2SJ77 2SJ78 ­160 ­180 - - - - V V 2SJ79 Gate to source breakdown Renesas Technology
Original
Abstract: HITACHI/íOPTOELECTRONICS} I TAW7TOPf OÃ'Lbû I UUNTCST 2SJ77(jS),2SJ79(g) SILICON P-CHAIMNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK214 , 2SJ77® 2SJ79® Drain-Source Voltage Vosx -160 -200 V Gate-Source Voltage Voss ±15 V Drain Current , ) â'¢Pulse Teat Item Symbol Test Condition min. typ. max. Unit Drain-Source Breakdown 2SJ77® /d=â , CopyRight 2003 i HITACHI/-COPTOELECTRONICS} ï ^^^-FnrnsxmTTöFTöEtECTHUNiubj 2SJ77 2SJ79 ®-:â'" ~73 -
OCR Scan
Abstract: HITACHI/{OPTOELECTRONICS} ¡ICS) 2SK214(^2SK216ÃS) 73 DE| M^L^GS â¡â¡â¡'HflH 73C 0998* D T-3 -
OCR Scan
hitachi j79 VM-10V 44962U
Abstract: -220AB 2SK213 2SJ75 140* 0.5 30 8/10 - 0.15/0.1 20 30 90/120 40/30 2SK214 2SJ77 160* ±15 2SK215 -
OCR Scan
2SK17S 2SK176 2SK1058 2SK318 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 2SK408/409 2SK619 2SK1197 2SK133 2SJ48 2SK134
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