NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ77 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
6 pages, |
Original |  |
|
|||||
| 2SJ77 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
6 pages, |
Original | |
|
|||||
| 2SJ77 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
4 pages, |
Scan | |
|
|||||
| 2SJ77 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
5 pages, |
Original | |
|
|||||
| 2SJ77 | Hitachi Semiconductor | Power Transistors Data Book |
1 pages, |
Scan | |
|
|||||
| 2SJ77 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
Scan | |
|
|||||
| 2SJ77 | N/A | FET Data Book |
2 pages, |
Scan | |
|
|||||
| 2SJ77 | N/A |
6 pages, |
Scan | |
|
|
|||||
| 2SJ77 | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
|
|||||
| 2SJ77 | N/A | Shortform Datasheet & Cross References Data |
1 pages, |
Scan | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , Excellent frequency response Enhancement-mode Outline 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Absolute Maximum , V 2SJ77 Â160 2SJ78 2SJ78 Â180 2SJ79 2SJ79 Â200 Gate to source voltage VGSS ±15 V , - V VGS = 2 V, ID = Â1 mA Drain to source 2SJ76 2SJ76 breakdown voltage 2SJ77 Â160 , pF f = 1 MHz Note: 2 1. Pulse test 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 3 2SJ76 2SJ76, 2SJ77 ... | Original |
5 pages, |
PCH-1 2SK216 2SK215 2SK214 2SK213 2SJ77 2SJ76 2SJ79 2sj78 2SJ78 2SJ76 abstract |
|
|||
| Abstract: 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Application High frequency and low frequency power amplifier, high , (Flange) 3. Drain This Material Copyrighted By Its Respective Manufacturer 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 , 2SJ77 -160 2SJ78 2SJ78 -180 2SJ79 2SJ79 -200 Gate to source voltage ^GSS ±15 V Drain , breakdown voltage 2SJ77 -160 - - V 2SJ78 2SJ78 -180 - - V 2SJ79 2SJ79 -200 - - V Gate to source breakdown , HITACHI This Material Copyrighted By Its Respective Manufacturer 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Power vs. ... | OCR Scan |
4 pages, |
2SK216 2SK215 2SK214 2SK213 2SJ78 2SJ77 2SJ79 2SJ76 2SJ76 abstract |
|
|||
| Abstract: HITACHI 2SJ76 2SJ76,2SJ77, 2SJ78 2SJ78,2SJ79 2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY POWER , (Ta-25 °C) Item Symbol Ratings Unit 2SJ76 2SJ76 2SJ77 2S.'7H 2SJ7? Drain-Source Voltage V«, -140-160 - , -140 - - V 2SJ77 -IfiO - V 2SJ78 2SJ78 -180 - - V 2SJ79 2SJ79 -200 - - V ti&tc-Source Rreakdown , Reverse Transfer Capacitance c,„ - 4.8 - pF "Pulse Tes) HITACHI 2SJ76 2SJ76,2SJ77,2SJ78 2SJ78,2SJ79 2SJ79 - TYPICAL ... | OCR Scan |
3 pages, |
Mosfet transistor hitachi 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 2SK216 mosfet hitachi HITACHI RF EDITION 2SJ76 hitachi S Mosfet Hitachi transistor "Hitachi Diode" datasheet abstract |
|
|||
| Abstract: HITACHI/ÃOPTOELECTRONICS} I TAW7TOPf OËLbû I UUNTCST 2SJ77(jS),2SJ79 2SJ79(g) SILICON P-CHAIMNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK214 2SK214 , in mnil (JEDEC TO-220AB) ABSOLUTE MAXIMUM RATINGS (T„=25 °C) Item Symbol Ratings Unit 2SJ77 , Symbol Test Condition min. typ. max. Unit Drain-Source Breakdown 2SJ77® /d=-1mA. V„¡=2V -160 - - V , /-COPTOELECTRONICS} ï ^^^-FnrnsxmTTöFTöEtECTHUNiubj 2SJ77 2SJ79 2SJ79 ®-:- ~73 ÃŽ>FJ 44 ... | OCR Scan |
2 pages, |
2SK216 2SK214 2SJ79 2SJ77 2SJ77 abstract |
|
|||
| Abstract: HITACHI/ÃOPTOELECTRONICS} tmW^-H I TAÃœffTTTDPf OËLbC l UuNÃŽCS ) ; 2SJ77(£),2SJ7Q(g) SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK214 2SK214 , *. in mnil (JEDEC TO-220AB) ABSOLUTE MAXIMUM RATINGS {Tc=25 °C) Item Symbol Ratings Unit 2SJ77 , Test Condition min. typ. max. Unit Drain-Source Breakdown 2SJ77® VlMMiDSX /d=-1mA. Vas=2V -160 - - V , /-COPTOELECTRONICS]- ï 2SJ77 2SJ79 2SJ79 ®-- ~73 ÃŽ>F| 44Tt,50S 000^44 3 73C 09944 TYPICAL OUTPUT CHARACTERISTICS -500 -4 -8 ... | OCR Scan |
2 pages, |
2SK216 2SK214 2SJ79 2SJ77 tr2b 2SJ77 abstract |
|
|||
| Abstract: 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 ADE-208-1179 (Z) 1st. Edition Mar. 2001 , 1 2 3 1. Gate 2. Source (Flange) 3. Drain G S 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 , Ratings Â140 V 2SJ77 Â160 2SJ78 2SJ78 Â180 2SJ79 2SJ79 Â200 Gate to source voltage VGSS , 2SJ77 Â160 - - V 2SJ78 2SJ78 Â180 - - V 2SJ79 2SJ79 Â200 - - V , - 4.8 - pF f = 1 MHz Note: 2 1. Pulse test 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 ... | Original |
6 pages, |
P-Channel Enhancement FET 2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77 2SJ76 ADE-208-1179 2SJ76 abstract |
|
|||
| Abstract: 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Silicon P-Channel MOS FET Application High frequency and low , Source (Flange) 3. Drain G S 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 2SJ76 Ratings Â140 V 2SJ77 , V VGS = 2 V, ID = Â1 mA Drain to source 2SJ76 2SJ76 breakdown voltage 2SJ77 Â160 - , pF f = 1 MHz Note: 2 1. Pulse test 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Typical Output ... | Original |
6 pages, |
2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77 2SJ76 PCH-1 2SJ76 abstract |
|
|||
| Abstract: Information Part Name Quantity Shipping Container 2SJ76-E 2SJ76-E 2SJ77-E 500 pcs 500 pcs Box (Sack , 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Silicon P Channel MOS FET REJ03G0122-0200 REJ03G0122-0200 (Previous: ADE-208-1179 ADE-208-1179 , ) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 , Â140 2SJ77 2SJ78 2SJ78 Â160 Â180 2SJ79 2SJ79 VGSS Channel temperature Storage temperature Â500 , V 2SJ77 2SJ78 2SJ78 Â160 Â180 - - - - V V 2SJ79 2SJ79 Gate to source breakdown ... | Original |
6 pages, |
PRSS0004AC-A 2SJ77 2SJ78 2SJ79 2sj79-e 2SJ79E 2SK213 2SK214 2SK215 2SK216 2SJ76 REJ03G0122-0200 ADE-208-1179 2SJ76 abstract |
|
|||
| Abstract: products contained therein. 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Silicon P-Channel MOS FET ADE-208-1179 ADE-208-1179 (Z , 2SJ76 2SJ76, 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Unit VDSX 2SJ76 2SJ76 Ratings Â140 V 2SJ77 Â160 2SJ78 2SJ78 Â180 2SJ79 2SJ79 Â200 , 2SJ76 2SJ76 breakdown voltage 2SJ77 Â160 - - V 2SJ78 2SJ78 Â180 - - V 2SJ79 2SJ79 , , 2SJ77, 2SJ78 2SJ78, 2SJ79 2SJ79 Typical Output Characteristics Power vs. Temperature Derating Â500 Â4.5 ... | Original |
8 pages, |
2SK216 2SK215 2SK214 2SK213 2SJ79 2SJ78 2SJ77 2SJ76 datasheet abstract |
|
|||
| Abstract: HITACHI 2SJ76 2SJ76,2SJ77, 2SJ78 2SJ78,2SJ79 2SJ79 SILICON P CHANNEL MOS FET HIGH FREQUENCY AND LOW FREQUENCY POWER AMPLIFIER, HIGH SPEED POWER SWITCHING Complementary Pair with 2SK213 2SK213, 2SK214 2SK214, 2SK215 2SK215, 2SK216 2SK216 â- , RATINGS (7^=25 °C) Item Symbol Ratings Unit 2SJ76 2SJ76 2SJ77 2Ãv'7H ZSJT? Drain-Source Voltage Voi , /p^-JmA -140 - - V 2SJ77 -160 - - V 2SJ7S -180 - - V 2SJ79 2SJ79 -200 - - V Gate-Source Breakdown , Reverse Transfer Capacitance c,„ - 4.8 - pF M'uls ... | OCR Scan |
6 pages, |
diodo t1 2SJ77 2SJ78 2SJ79 2SK213 2SK214 2SK215 diode sy 171 2SJ130 2SK216 2SJ76 2SJ76 abstract |
|
|||
| Abstract: iL LF ü. HS PSW MOS P E -140 DSX ±15 s -500m D 30 -0.2 -1.5 -10 -10m 20m 35m -20 -10m 2SJ77 Bit LF D, HS PSW MOS P E -160 DSX ±15 s -500m D 30 -0. 2 -1. 5 -10 -10m 20m 35m -20 -10m 2SJ77 CK , 2SK213 2SK213 116A GSD 2SJ76 2SJ76 120 4.8 -10 VDS(sat)=-2V«iax lD=-10mA, VGD=0 2SK214 2SK214 116A GSD 2SJ77 120 4.8 -10 VDS(sat)=-2Vmax ID=-10mA, VGD=0 116A GDS,ft#2SJ77 2SJ77(K) 120 4.8 -10 VDS ... | OCR Scan |
2 pages, |
2SJ78 2SJ79 2SK344 2SJ91 2SJ92 2SJ77 2SJ115 2SJ75 2SJ96 2SK345 2SJ102 2SJ18 2SK147 2SK146 2SJ90 2SJ69 2SJ70 2SJ69 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| ) * P-Channel -160V -160V -160V -160V -.5A .MODEL 2SJ77 PMOS (VTO=322.944M KP=20U L=2U W=3.50594M 50594M 50594M 50594M GAMMA=0 PHI=600M www.datasheetarchive.com/files/spicemodels/misc/models/2s-jk.lib |
Spice Models | 04/04/2004 | 35.36 Kb | LIB | 2s-jk.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SJ77K | Hitachi Semiconductor | P-Channel Enhancement MOSFET | |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FQP3P20 | FQP3P20 Buy | 2SJ77 Buy | Hitachi | Close | Power MOSFET | 200V P-Channel QFET |
| FQPF7P20 | FQPF7P20 Buy | 2SJ77 Buy | Hitachi | Close | Power MOSFET | 200V P-Channel QFET |