NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2sj6806 2SJ680 PMOS (-MOSV) 2SJ680 DC-DC 1.5 ± 0.2 : mm : |Yfs| = 2.0 S () : RDS , 2SJ680 (Ta = 25°C , 0.81 C J680 () No. 2 2008-06-16 2SJ680 ID VDS -6 -5 -4.8 , 0.1 -0.1 -10 ID (A) -1 3 -10 ID (A) 2008-06-16 2SJ680 RDS , (W) (V) 40 20 (nC) 2008-06-16 2SJ680 EAS Tch -30 EAS ID (A ... | Original |
7 pages, |
J680 2SJ680 2SJ680 abstract |
| Abstract: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching , care. 1 2004-12-24 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , 2004-12-24 2SJ680 ID VDS -2.0 -6 -5 -4.8 Common source Tc = 25°C, pulse test -6 , ) -1 Drain current 3 -10 ID (A) 2004-12-24 2SJ680 RDS (ON) Tc IDR VDS -10 , PD (W) -160 20 Total gate charge Qg (nC) 4 2004-12-24 2SJ680 rth tw ... | Original |
6 pages, |
TOSHIBA NOTE J680 2SJ680 2SJ680 abstract |
| Abstract: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching , care. 1 2004-12-24 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol , 2004-12-24 2SJ680 ID VDS -2.0 -6 -5 -4.8 Common source Tc = 25°C, pulse test -6 , ) -1 Drain current 3 -10 ID (A) 2004-12-24 2SJ680 RDS (ON) Tc IDR VDS -10 , PD (W) -160 20 Total gate charge Qg (nC) 4 2004-12-24 2SJ680 rth tw ... | Original |
5 pages, |
2SJ680 J680 2SJ680 abstract |
| Abstract: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching , 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. , A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-17 2SJ680 , 2006-11-17 2SJ680 RDS (ON) Tc IDR VDS -10 6 Common source VGS = -10 V pulse test , 2006-11-17 2SJ680 rth tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 ... | Original |
6 pages, |
J680 2SJ680 2SJ680 abstract |
| Abstract: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching , 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. , equipment. 2 2009-09-29 2SJ680 ID VDS -2.0 -8 -6 -5 -4.8 -10 -8 -15 , (A) -1 -10 Drain current ID (A) 3 2009-09-29 2SJ680 RDS (ON) Tc IDR VDS , 20 Total gate charge Qg (nC) 4 2009-09-29 2SJ680 rth tw Normalized transient ... | Original |
6 pages, |
J680 2SJ680 2SJ680 abstract |
| Abstract: 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching , 2008-06-16 2SJ680 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition , 2008-06-16 2SJ680 ID VDS -2.0 -8 -6 -5 -4.8 -10 -8 -15 -4 -15 -4.6 , -10 Drain current ID (A) 3 2008-06-16 2SJ680 RDS (ON) Tc IDR VDS -10 6 , gate charge Qg (nC) 4 2008-06-16 2SJ680 rth tw Normalized transient thermal impedance ... | Original |
6 pages, |
J680 2SJ680 2SJ680 abstract |
| Abstract: SSM3K02T SSM3J16FU ) TK3P50D TK3P50D (3.0) TK3A65D TK3A65D (2.25) 2SK2719 2SK2719 (4.3) 2SK3564 2SK3564 (4.3) SSM3K318T SSM3K318T (0.145) 2SJ567 2SJ567 (2.0) 2SJ680 (2.0 ... | Original |
62 pages, |
2SK3658 TPCA8057-H TPCA8059-H TPCA8065H TPCA8A10-H Toshiba Europe DTMOS IV tk8a50 TK40A10N1 TK65G10N1 TPH4R606NH tk14a55d equivalent TPCA8057 TK8A10K3 TK100 datasheet abstract |
| Abstract: 2SK240 2SK4112 (0.074) SSM6J401TU SSM6J401TU (0.145) 2.2 2.3 2.4 2SJ567 2SJ567 (2.0) 2SJ680 (2.0) SSM3K318T SSM3K318T (0.145) TK3A60DA TK3A60DA ... | Original |
67 pages, |
TJ150F06M3L SSM3K17FU TK13A65D tpca8065-h TPC8057-H TK12E60U tk8a60da TPCA8059-H TPCA8057-H TK8A10K3 TJ9A10M3 SSM6J501NU TPCA*8065 TJ11A10M3 datasheet abstract |
| Abstract: 2SK1603 ) 2SK4002 2SK4002(5) 2SK2599 2SK2599(3.2) 2SK3373 2SK3373(3.2) 2 2.1 2.2 2SJ567 2SJ567(2.0) 2SJ680(2.0) 2SK2718 2SK2718(6.4 ... | Original |
36 pages, |
2SK4115* equivalent 2SK3934 Equivalent 2SK3565 equivalent 2SK2837 equivalent 2SK3799 2SK2996 equivalent 2SK3567 equivalent 2sK4111 equivalent 2sK2961 equivalent 2SK3799 equivalent 2sk3797 equivalent 2sk4113 2SK2843 equivalent datasheet abstract |
| Abstract: 2SK2056 2SK1377 2SK1603 ) TPC6006-H TPC6006-H (0.075) 2.5 2SJ567 2SJ567 (2.0) 2SJ680 (2.0) TPC6105 TPC6105 (0.11) TPCF8301 TPCF8301 (0.11) TPCF8B01 TPCF8B01 (0.11 ... | Original |
34 pages, |
2SK3567 equivalent 2SK3767 equivalent sm 0038 tsop TK16H60C 4614 mosfet 2SK4107 2sK2961 equivalent TPCA8023-H MOSFET TOSHIBA 2SK 2SK3561 equivalent 2SK3568 equivalent tpc8118 2SK3878 equivalent datasheet abstract |
| Abstract: -MOSV -MOSIII *: only SMD version available N EW PW-Mold2 Part Number 2SJ681 2SJ681(Q) 2SJ680(Q ... | Original |
16 pages, |
2SK3667 equivalent 2SK3569 equivalent 2sk3799 2SK3767 equivalent 2sk3265 to252ab 2SK2847 2sk3625 tpc8214-h 2SK3568 equivalent 2SK2996 equivalent 2SK3934 equivalent 2SK3566 equivalent POWERMOSFET07 POWERMOSFET07 abstract |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SJ680 Buy | 2SJ319 Buy | Renesas | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | 2SJ403 Buy | Sanyo Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | 2SJ404 Buy | Sanyo Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | 2SJ405 Buy | Sanyo Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | 2SJ406 Buy | Sanyo Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | 2SJ410 Buy | Renesas | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | BUZ173 Buy | Infineon Technologies | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | FQPF12P20 Buy | Fairchild Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | FQPF3P20 Buy | Fairchild Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |
| 2SJ680 Buy | FQPF5P20 Buy | Fairchild Semiconductor | Power MOSFET (Pch single) - New PW-Mold2 - | Transistors |