ENN6898 2SJ569LS 2078B 2SJ569 -300V TA-2231 --10V --20V --100V IT01836 IT01835

2SJ569LS P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features · · Package Dimensions

Ordering number : ENN6898 ENN6898 2SJ569LS 2SJ569LS P-Channel Silicon MOSFET 2SJ569LS 2SJ569LS Ultrahigh-Speed Switching Applications Features · · Package Dimensions Low ON-resistance. Ultrahigh-speed switching. unit : mm 2078B 2078B [2SJ569 2SJ569] 4.5 10.0 2.8 0.6 16.1 16.0 3.5 7.2 3.2 14.0 3.6 0.9 1.2 0.7 0.75 1 : Gate 2 : Drain 3 : Source 2 3 2.4 1 Specifications 2.55 2.55 SANYO : TO-220FI-LS Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -300 Gate-to-Source Voltage VGSS ±30 V -5 A Drain Current (DC) ID Drain Current (Pulse) IDP PW10µs, duty cycle1% V -20 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ max Unit ID=-1mA, VGS=0 IG=±100µA, VDS=0 Zero-Gate Voltage Drain Current V(BR)DSS V(BR)GSS IDSS VDS=-300V -300V, VGS=0 -100 µA Gate-to-Sourse Leakage Current IGSS VGS=±25V, VDS=0 ±10 µA -2.5 V Gate-to-Source Breakdown Voltage Cutoff Voltage VGS(off) VDS=-10V, ID=-1mA -300 V ±30 V -1.5 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22201 TS IM TA-2231 TA-2231 No.6898-1/4 2SJ569LS 2SJ569LS Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max | yfs | VDS=-10V, ID=-3A RDS(on) Ciss ID=-3A, VGS=-10V VDS=-20V, f=1MHz 0.95 750 pF Output Capacitance Coss VDS=-20V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=-20V, f=1MHz 76 pF Turn-ON Delay Time td(on) See specified Test Circuit 24 ns Rise Time tr td(off) See specified Test Circui 37 ns See specified Test Circuit 230 ns Forward Transfer Admittance Static Drain-to-Sourse On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time tf VSD Diode Forward Voltage 3 5 See specified Test Circuit 110 IS=-5A, VGS=0 S 1.25 -1.0 ns -1.5 V Switching Time Test Circuit VDD= -100V -100V VIN ID= -3A 0V -10V RL=33.3 VIN VOUT D PW=10µs D.C.1% G P.G 50 2SJ569LS 2SJ569LS S 25°C 25°C V -3.5V -3.0 -2.5 -2.0 -1.5 -3.0V Tc= - -3.5 VDS= -10V -7 Drain Current, ID - A Drain Current, ID - A -4.0 ID - VGS -8 -4.0 -10.0V -8.0V -4.5 -6.0 V ID - VDS -5.0 -6 -5 -4 -3 -2 VGS= -2.5V =7 5° C -2 5° C 25° C -1.0 -1 Tc -0.5 75°C 0 0 0 -3 -6 -9 -12 -15 -18 -21 -24 Drain-to-Source Voltage, VDS - V 0 -30 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 -12 -14 -16 Gate-to-Source Voltage, VGS - V -18 -20 IT01836 IT01836 -2 -3 -4 -5 Gate-to-Source Voltage, VGS - V 1.8 -6 IT01835 IT01835 RDS(on) - Tc 2.0 Static Drain-to-Source On-State Resistance, RDS(on) - Tc=25°C ID= -3A -1.8 -1 IT01834 IT01834 RDS(on) - VGS -2.0 Static Drain-to-Source On-State Resistance, RDS(on) - -27 ID= -3A VGS= -10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 Case Temperature, Tc - °C 120 140 160 IT01837 IT01837 No.6898-2/4 2SJ569LS 2SJ569LS yfs - ID VDS= -10V 7 5 25 = - 5 °C Tc 3 2 C 25° 5°C 7 1.0 7 5 3 2 3 5 7 2 -1.0 3 5 -1.0 7 5 3 7 0 -10 IT01838 IT01838 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Diode Forward Voltage, VSD - V Ciss, Coss, Crss - VDS 10000 7 5 -1.4 IT01839 IT01839 VGS - Qg -10 f=1MHz VDS= -10V Gate-to-Source Voltage, VGS - V -9 3 2 Ciss, Coss, Crss - pF 2 -0.1 2 Drain Current, ID - A 1000 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 2 -8 -7 -6 -5 -4 -3 -2 -1 10 0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 Drain-to-Source Voltage, VDS - V -50 0 5 Drain Current, ID - A 2 tf 100 7 5 tr 3 td(on) 2 10 -0.1 2 3 5 7 -1.0 2 Drain Current, ID - A 3 5 -10 7 5 3 2 1.0 0.5 40 IT01841 IT01841 100µs DC -1.0 7 5 1ms op era tio Operation in this n area is limited by RDS(on). 3 2 7 -10 2 3 10ms 100ms 5 7 -100 2 Drain-to-Source Voltage, VDS - V Allowable Power Dissipation, PD - W 1.5 35 10µs 3 5 7 -1000 IT01843 IT01843 PD - Tc 35 2.0 30 ID= -5A IT01842 IT01842 2.5 25 20 IDP= -20A -0.1 7 5 3 Ta=25°C 2 -0.01 Single pulse 2 3 5 -1.0 PD - Ta 3.0 15 ASO -100 7 5 3 2 td (of f) 3 10 Total Gate Charge, Qg - nC VDD=100V VGS=10V 7 5 IT01840 IT01840 SW Time - ID 1000 Switching Time, SW Time - ns 3 2 0.1 -0.1 Allowable Power Dissipation, PD - W VGS = 0 Tc=75° C 25°C -25°C 7 IF - VSD -10 Forward Current, IF - A Forward Transfer Admittance, yfs - S 10 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - °C 140 160 IT01845 IT01845 0 20 40 60 80 100 120 Case Temperature, Tc - °C 140 160 IT01844 IT01844 No.6898-3/4 2SJ569LS 2SJ569LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.6898-4/4