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Part : 2SJ449(1) Supplier : NEC Manufacturer : Bristol Electronics Stock : 66,000 Best Price : $0.39 Price Each : $1.50
Part : 2SJ448-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 1,490 Best Price : $10.80 Price Each : $10.80
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2SJ44 Datasheet

Part Manufacturer Description PDF Type
2SJ44 InterFET P-Channel silicon junction field-effect transistor Original
2SJ44 NEC Semiconductor Selection Guide 1995 Original
2SJ44 NEC FET(Junction type) AF low noise amplification Original
2SJ44 N/A Shortform Transistor PDF Datasheet Scan
2SJ44 N/A Semiconductor Master Cross Reference Guide Scan
2SJ44 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ44 N/A FET Data Book Scan
2SJ440 Toshiba Original
2SJ440 Toshiba TRANS MOSFET P-CH 180V 9A 3(2-16F1B) Original
2SJ440 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SJ440 Toshiba P-Channel MOSFET Scan
2SJ440 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan
2SJ440-Y Toshiba Silicon P-Channel MOS Type FET Scan
2SJ440-Y Toshiba P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) Scan
2SJ440-Y Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan
2SJ443 Hitachi Semiconductor Mosfet Guide Original
2SJ443 Hitachi Semiconductor Power MOSFET Quick Reference Guide Original
2SJ443 Renesas Technology Silicon P-Channel MOS FET Original
2SJ448 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Original
2SJ448 NEC Switching P-Channel Power MOS FET Original
Showing first 20 results.

2SJ44

Catalog Datasheet MFG & Type PDF Document Tags

nec 2sk163

Abstract: 2SK163 NEC ELECTRON DEVICE P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 DESCRIPTION The 2SJ44 is designed for use in driver stage of AF low noise amplifier. FEATURES â'¢ Low Noise Figure en=1.5 nV/VHz TYP. (VDS=-10 V, lD=â'"1.0 mA, f=1.0 kHz) NV=S20mV â'¢ High Voltage, High IVfsI, and Wide Dynamic Range VGD0 ^40 V lYfs 1=9.0 mS TYP. (VDS=-10V, lD=â'"1.0 mA, f=1.0 kHz) â'¢ Complementary to NEC , -9.0-14 -13-18 'DSS Test Conditions : Vqs=_ V, VGg = 0 Nippon Electric Co,Ltd 2SJ44 TYPICAL
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OCR Scan
2SK163 SC-43A nec 2sk163 2SK163 TO92 2sk163 nec 2sk163 transistor 2SJ44 2SK163 SC-43A J22686 TC-3344A J22686 TC-3344A

nec 2sk163

Abstract: 2sk163 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 DESCRIPTION The 2SJ44 h designed for use in driver stage of AF low noise amplifier. FEATURES «Low Noise F iguro en-1.5 nV/\/HÏ TYP. (Vosâ'"10 V. I0â'"1.0 mA. f-1.0 kHz) NV £ 20 mV â'¢ High Voltage. High IVftl, and Wide Dynamic Range Vgdo*40V lVfl 1=9.0 mS TYP. (Vosâ'"10 V. I0â'"1.0 mA. f-1.0 kHz) â'¢ Complementary to NEC 2SK163 ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . -55 to +125 °C Junction
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OCR Scan
transistor 2sk163 VOS-10 V. 9014 c 9014 transistor transistor sc 9014

nec 2sk163

Abstract: 2SK163 ELECTRON DEVICE NEC DESCRIPTIO N am plifier. FEA TU R ES P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR 2SJ44 The 2SJ44 is designed fo r use in driver stage o f A F low noise PACKAGE D IM EN SIO N S in m illim e te r s (in ch e s) 5.2 MAX (0 2 0 4 MAX ) · Low Noise Figure en = 1.5 n V /v /H ÏT V P . (V DS= - 1 0 V , l D- 1.0 m A , f = 1.0 kHz) N V S 20 m V · High Voltage, High lv f s I, and Wide D ynam ic Range V qdO ^ 4 0 V lYfs != 9.0 mS TYP. (V DS = -1 0 V , l D =-1.0 m A , f= 1 .0 kHz} ·
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OCR Scan
nec j44

2SJ18

Abstract: 2SJ56 2sk176 . 1« 30 -0. 5m -12m -10 0. 2 3 -10 -10« 3m 9m -10 IDSS 2SJ44 NEC LF LN A P D 40 GDO 40 0 -10m G , 2SJ43 50 10 0 0 NV=20Vmax ffi^SSSiciS 53A DCS 2SJ44 50 10 0 -10 NV=50mVmax 53A DGS
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OCR Scan
2MI50F-050 2M150S-050 2SJ18 2SJ20 2SK60 2SK69 2SJ56 2sk176 2SJ51 2SK151 2N4392 2N4393 2SJ11 2SJ12

2sk152 equivalent

Abstract: 2SJ44 _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese InterFET Process Unit Limit V M in nA M ax V M in /M a x mA M in /M a x mS T yp pF T yp pF T yp IFN113 IFN152 IFN363 IFP44 PJ99 NJ132 NJ132L NJ450 N Channel -5 0 1.0 ( - 20 V) -0 .3 /-1 0 (20 V) 5.0/150 (20 V) 20 (20 V) 10 (0) (20 V) 3.0 (0) (15 V) T O - 18 SDG N Channel -2 0 0.1 (-10 V) -0 .5 /-2 .0 (10V) 5.0/20 (10V) 30 (10V) 15 (0
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OCR Scan
2sk152 equivalent

IFN152

Abstract: 2SJ44 9-97 t ó SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N Channel N Channel N Channel P Channel Unit Limit Parameters -50 -20 -40 25 V Min BVqss 1.0 (- 20 V) 0.1 (â'" 10 V) 1.0 (- 30 V) 1.0 (10V) nA Max Igss -0.3/-10 (20 V) - 0.5/- 2.0 (10V) -0.3/-1.2 (10 V) -0.2/- 1.5 e iov) V Min/Max V gs (Off) 5.0/150 (20 V) 5.0/20 (10V) 5.0/30 (10V) 1.0/18 (-10 V) mA Min/Max Idss 20 (20 V) 30 (10V) 60 (10V) 9
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OCR Scan
T0-18
Abstract: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit -5 0 -2 0 -4 0 25 V M in 1.0 { - 20 V) 0.1 ( - 1 0 V) 1.0 (â'"30 V) 1.0 (10V) nA Max - 0 .5 /- 2.0 (10V) - 0 .3 /-1 .2 (10 V) - 0 . 2 -
OCR Scan

2sj44

Abstract: IFP44 G 30 PJ99 Process 9-97 SILICON JUNCTION FIELD-EFFECT TRANSISTOR · GENERAL PURPOSE AMPLIFIER · ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig Operating Junction Temperature, T j Storage Temperature, Ts 10 mA +150°C -65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P Die Size = 0 .0 2 1 " X 0 .0 2 1" All
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OCR Scan
j174 transistor PJ99 000D6M3

2SK105 DGS

Abstract: 2SK105 Channel 2SK363 IFN363 NJ450 N Channel 2SJ44 IFP44 PJ99 P Channel Japanese InterFET Process
InterFET
Original
2SK105 2SK105 DGS V6010 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59

2sk152 equivalent

Abstract: IFN152 Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­
InterFET
Original
INTERFET 10 V jfet databook JFET TO18

2sj44

Abstract: PJ99 F-30 01/99 PJ99 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ Analog Switch Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C ­ 65°C to +175°C G S-D S-D G Die Size = 0.021" X 0.021" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ99 Process. Datasheet 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116
InterFET
Original
j177 equivalent transistor J177 equivalent

transistor gfs

Abstract: 2N5116 G 30 PJ99 Process SILÌCONJUNCTÌONTÌELD^EFFE â'¢ GENERAL PURPOSE AMPLIFIER â'¢ ANALOG SWITCH Absolute maximum ratings at T* = 25°C Gate Current, Ig 10 mA Operating Junction Temperature, T j +150°C Storage Temperature, Ts -65°C to +175°C Devices in this Databook based on the PJ99 Process. Datasheet Datasheet IFP44 J174, J175 J176, J177 P1086, P1087 VCR3P 9-97 2N3993, 2N3993A 2N3994, 2N3994A 2N5114, 2N5115 2N5116 2SJ44 IFN5114, IFN5115 IFN5116 Die Size = 0.021" X 0.021" All
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OCR Scan
transistor gfs J176 VCR3P j174 EQUIVALENT J174 J175

e175 Siliconix

Abstract: E175 fet SMP5462 TMPF5462 2N5462 2SJ44 ~44 2SJ45 2SJ45 U301 U300 2SJ125 2SJ40 See Index Interfet 5 prpueElec
Advanced Semiconductor
Original
55T175 MMBFJ174 2N5798 2N5475 2N5476 e175 Siliconix E175 fet u301 siliconix InterFET u301 2N3386 5MPJ271 TMPFJ271 J175-18 MMBFJ175 5MPU305

2SJ72

Abstract: 2sj28 Absolutes maximum ratings (Ta=25ºC) PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) Pd/Pch Tj/Tch min UP07 2N5465 2SJ10 2SJ11 2SJ12 2SJ13 2SJ15 2SJ16 2SJ17 2SJ18 2SJ19 2SJ20 2SJ21 2SJ22 2SJ26 2SJ27 2SJ28 2SJ29 2SJ32 2SJ33 2SJ39 2SJ40 2SJ43 2SJ44 2SJ45 2SJ47 2SJ48 2SJ49 2SJ50 2SJ51 2SJ55 2SJ56 2SJ68 2SJ69 2SJ70 2SJ72 2SJ73 2SJ74 2SJ75 2SJ76 2SJ77 (V) mode (V) mode (mA) 100 60 20 20 20 18 18 20 170 140 100
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Original
2SJ82 2SJ83 2SJ84 2SJ90 2SJ92 2SJ96 2SJ99 2SJ78 2SJ79 2SJ81

2SK146

Abstract: 2SK147 equivalent Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44
InterFET
Original
IFN105 2SK147 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2sk146 datasheet 2SK105 Datasheet IFN147

2SK146

Abstract: 2SK147 equivalent Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit Parameters ­ 50 ­ 20 ­ 40 25 V Min BVGSS 1.0 (­ 20 V) 0.1 (­10 V) 1.0 (­ 30 V) 1.0 (10 V) nA Max IGSS ­ 0.3/­10 (20 V) ­
InterFET
Original
IFN146 equivalent transistor TO 2sk146 shiloh

2sk1060

Abstract: 2SK type -45F ­ 60 2SJ331 MP-88 ­ 60 2SJ448 MP-45F ­ 250 2SJ449 MP-45F ­ 250 1 ­4 , Package 2SJ44 TO-92 40 30 400 9.0 2SJ45 TO-92 40 30 400 9.0 TYP , 2SJ448 (2.0) q 2SK2353 (1.4) q 2SK2354 (1.5) 2SK2355 (1.4) 4.5 2SK2356 (1.5) 2SK2481 (4.0 , ) 2SK2372 (0.27) q 2SJ449 (0.8) 6.0 14 2SK2134 (0.4) q 2SK2135 (0.18) 15 16 20 25
NEC
Original
2SK104 2SK195 2SK505 2SK518 2sk1060 2SK type transistor 2sk transistor 2sk193 transistor 2sk162 transistor SST 250 2SK162 2SK193 2SK507
Showing first 20 results.