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2SJ377(TE16R1,NQ) Toshiba America Electronic Components MOSFET P-CHAN 60V 5A 2-7J1B visit Digikey Buy

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2SJ377 Datasheet

Part Manufacturer Description PDF Type
2SJ377 Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original
2SJ377 Toshiba Power MOSFETs Cross Reference Guide Original
2SJ377 Toshiba Original
2SJ377 Toshiba P-Channel MOSFET Original
2SJ377 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SJ377 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ377 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan
2SJ377 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications Scan
2SJ377(2-7B1B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power Original
2SJ377(2-7B2B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General Purpose Power Original
2SJ377(2-7J1B) Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power Original
2SJ377(Q) Toshiba 2SJ377 - MOSFET P-CHAN 60V 5A 2-7J1B Original
2SJ377Q Toshiba 2SJ377Q - Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) PW-Mold Original
2SJ377TE16L Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original
2SJ377(TE16L1.N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original
2SJ377(TE16L1N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original
2SJ377(TE16L1,NQ) Toshiba 2SJ377 - Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) PW-Mold T/R Original
2SJ377TE16R Toshiba 2SJ377 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Original
2SJ377(TE16R) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original
2SJ377(TE16R1N) Toshiba TRANS MOSFET P-CH 60V 5A 3(2-7J1B) Original
Showing first 20 results.

2SJ377

Catalog Datasheet MFG & Type PDF Document Tags

J377

Abstract: 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z , . Handle with care. Weight: 0.36 g (typ.) 1 2006-11-16 2SJ377 Electrical Characteristics (Ta , 2006-11-16 2SJ377 3 2006-11-16 2SJ377 4 2006-11-16 2SJ377 5 2006-11-16 2SJ377 RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to change without
Toshiba
Original
J377 SC-64

J377

Abstract: 2SJ377 2SJ377 2 PMOS (L -MOS) 2SJ377 DC-DC : mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 4V 0.6 MAX. VDSS -60 VDGR -60 V VGSS ±20 V ( 1 , -25 VTch = 25 ()L = 14.84 mHRG = 25 IAR = -5 A 3: MOS 1 2010-02-05 2SJ377 , (EU 2002/95/EC) 2 2010-02-05 2SJ377 3 2010-02-05 2SJ377 4 2010-02-05 2SJ377 5 2010-02-05 2SJ377 · · · · ""
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Original
VDD-48

J377

Abstract: 2SJ377 2SJ377 2 PMOS (L -MOS) 2SJ377 DC-DC : mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 4V 5.5 ± 0.2 : RDS (ON) = 0.16 () : |Yfs| = 4.0 S () : Vth = -0.8-2.0V (VDS = -10V, ID , . JEDEC JEITA 3 2-7J1B : 0.35 g () MOS 1 2009-07-13 2SJ377 , (EU 2002/95/EC) 2 2009-07-13 2SJ377 3 2009-07-13 2SJ377 4 2009-07-13 2SJ377 5 2009-07-13 2SJ377 · · · · ""
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Original
Abstract: SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA 2SJ377 SILICON P CHANNEL MOS TYPE TECHNICAL DATA (L2 - 7 T - M O S V ) (2SJ377) H IG H S P E E D , H IG H C U R R E N T S W IT C H , 2SJ377 - 1 _ 1 9 9 6 - 0 9 - 0 2 _ ^ TO SH IB A CORPORATION SEMICONDUCTOR TOSHIBA 2SJ377 TECHNICAL DATA (2SJ377) E L E C T R IC A L C H A R A C T E R IS T , , VGs = 0 V d lo R / dt = 50A / ¡us 2SJ377 - 2 1996-09-02 TO S H IB A CORPORATION FORWARD -
OCR Scan

2SJ377

Abstract: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain-source , 2002-06-27 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , Marking 2 2002-06-27 2SJ377 3 2002-06-27 2SJ377 4 2002-06-27 2SJ377 5 2002-06-27 2SJ377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original

2SJ377

Abstract: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON , 2002-06-27 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , Marking 2 2002-06-27 2SJ377 3 2002-06-27 2SJ377 4 2002-06-27 2SJ377 5 2002-06-27 2SJ377 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original

J377

Abstract: silicon power J377 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source , electrostatic-sensitive device. Handle with care. 1 2006-11-16 2SJ377 Electrical Characteristics (Ta = 25 , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ377 3 2006-11-16 2SJ377 4 2006-11-16 2SJ377 5 2006-11-16 2SJ377 RESTRICTIONS ON PRODUCT
Toshiba
Original
silicon power J377 transistor j377

2SJ377

Abstract: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , ) 2000-03-22 2/5 TOSHIBA 2SJ377 ID - vds id - vds COMMON SOUCE Tc = 25°C â'" 6 -4 -3.5 , -0.1 -0.3 -1 -3 -10 DRAIN CURRENT ID (A) -30 2000-03-22 3/5 TOSHIBA 2SJ377 RDS(ON) - Te °o M w , -20 -12 -4 16 24 TOTAL GATE CHARGE 32 (nC) 2000-03-22 4/5 TOSHIBA 2SJ377 SAFE OPERATING AREA
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OCR Scan
95MAX
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 -tt-M O SV ) 2SJ377 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE , to change w ith o u t notice. 1998 01-14 1/5 - TOSHIBA 2SJ377 ELECTRICAL , 2SJ377 id - vds id - vds id - vos vds - vos GATE-SOURCE VOLTAGE Vq s (V , Ijy (A) 1998 01-14 3/5 - TOSHIBA 2SJ377 Rd s (o n ) - Te IDR - VDS CAPACITANCE -
OCR Scan

2SJ377

Abstract: J377 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 4 , is an electrostatic-sensitive device. Handle with care. 1 2010-02-05 2SJ377 Electrical , hazardous substances in electrical and electronic equipment. 2 2010-02-05 2SJ377 3 2010-02-05 2SJ377 4 2010-02-05 2SJ377 5 2010-02-05 2SJ377 RESTRICTIONS ON PRODUCT
Toshiba
Original
Abstract: TOSHIBA 2SJ377 Field Effect Transistor Silicon P Channel MOS Type (L2-k-MOS V) High Speed, High Current Switching, DC-DC Converter Chopper Regulator and Motor Drive Applications Features U nit in m m · 4V Gate Drive · Low Drain-Source ON Resistance ~ Rds(ON) = 0.16 i i (Typ.) · High Forward Transfer Admittance - Yfs' = 4.OS (Typ.) · Low Leakage Current - logs = "1 OOjiA (Max.) @ · Enhancement-Mode =: -60V , . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 183 2SJ377 D iscrete S em ico n du cto rs -
OCR Scan
Abstract: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2 tt-M O SV ) - 2SJ377 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U STRIA L APPLICATIO NS U n it , contained herein is subject to change w ith o u t notice. 1998 10-30 - 1/5 TOSHIBA 2SJ377 , Alphabet A) I â'"Y ear (L ast Number of the Christian Era) - TOSHIBA 2SJ377 id - , Vq s (V) id (A) 1998 10-30 - 3/5 TOSHIBA 2SJ377 Rd s (ON) - Te IDR - Vd S -
OCR Scan

J377

Abstract: 2SJ377 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 4 , an electrostatic-sensitive device. Handle with care. 1 2009-07-13 2SJ377 Electrical , hazardous substances in electrical and electronic equipment. 2 2009-07-13 2SJ377 3 2009-07-13 2SJ377 4 2009-07-13 2SJ377 5 2009-07-13 2SJ377 RESTRICTIONS ON PRODUCT
Toshiba
Original

J377

Abstract: j377 datasheet 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain-source ON , . JEDEC JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2004-07-06 2SJ377 , )-free finish. 2 2004-07-06 2SJ377 3 2004-07-06 2SJ377 4 2004-07-06 2SJ377 5 2004-07-06 2SJ377 RESTRICTIONS ON PRODUCT USE 030619EAA · The information
Toshiba
Original
j377 datasheet

J377

Abstract: 2SJ377 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L -MOSV) 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON-resistance : RDS (ON) = 0.16 (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low , JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2005-03-04 2SJ377 Electrical , 2SJ377 3 2005-03-04 2SJ377 4 2005-03-04 2SJ377 5 2005-03-04 2SJ377
Toshiba
Original
Abstract: MOTOR DRIVE APPLICATIONS 77 2SJ377 INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low , IB A 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain , TO SH IB A 2SJ377 id - vds id - vds DRAIN-SOURCE VOLTAGE V¡jg (V , ) 1998 01-14 3/5 - TO SH IB A 2SJ377 R d s (ON) - Te id r - vds CASE TEMPERATURE , ) 1998 01-14 4/5 - TO SH IB A 2SJ377 rth - tw ¡5 PULSE WIDTH tw (s) -3 0 SAFE -
OCR Scan

2SK2056

Abstract: 2SK1603 2SJ126 2SJ304 2SK568 2SJ183 2SJ377 2SK572 2SJ224 2SJ312 2SK573 2SK1641 2SJ238 2SJ360 2SK578 2SK2882 2SJ239 2SJ377 2SK643 2SK2601 2SJ240 2SJ349 2SK644 2SK2601 2SJ241 2SJ401 2SK672 2SK2232 2SJ315 2SJ377 2SK673 2SK2232
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Original
2SK794 2SK1377 2SK2056 2SK2236 2SK1603 2SK2352 2SK537 2SK1723 2SK1213 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2231

2SJ377

Abstract: relay IR TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J 3 7 7 , without notice. 1998-10-30 1/5 TOSHIBA 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC , from Alphabet A) â'" Year (Last Number of the Christian Era) 1998-10-30 2/5 TOSHIBA 2SJ377 id - VDS id , -0.3 -1 -3 -10 drain current id (a) -30 1998-10-30 3/5 TOSHIBA 2SJ377 RDS(ON) - Te * £ °o M w o g , 40 TOTAL GATE CHARGE Qâ'ž (nC) 1998-10-30 4/5 TOSHIBA 2SJ377 SAFE OPERATING AREA < n EAS - Tch -0.1
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OCR Scan
relay IR

2SJ377

Abstract: TOSHIBA 2SJ377 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ377 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , (Starting from Alphabet A) â'" Year (Last Number of the Christian Era) 1998-01-14 2/5 TOSHIBA 2SJ377 , -0.1 -0.3 -1 -3 -10 DRAIN CURRENT Id (A) -30 1998-01-14 3/5 TOSHIBA 2SJ377 RDS(ON) - Te ¿H Çr , -20 -16 g > -12 0 8 16 24 32 40 TOTAL GATE CHARGE Qâ'ž (nC) -4 1998-01-14 4/5 TOSHIBA 2SJ377
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OCR Scan

TLSV1060

Abstract: TC7MBL3244AFK 12% 2 2SJ377/378 3 U-MOS III , Max A VDSS V ID VGS=4V VGS=10V 0.25 0.17 -60 -5 0.25 0.17 -60 -5 2SJ377 2SJ378 3
Toshiba
Original
TLSV1060 TC7MBL3244AFK US20 2sj668 03-3457-3405FAX TLRV1060 TLRMV1060 TLOV1060 TLYV1060
Showing first 20 results.