NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ351 | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
4 pages, |
Scan | |
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| 2SJ351 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| 2SJ351 | Renesas Technology / Hitachi Semiconductor | FET Transistor, Silicon P-Channel MOS FET |
10 pages, |
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| 2SJ351 | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
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| 2SJ351 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
Scan | |
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| 2SJ351-E | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier Complementary , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P Ã" 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage VGSS ±20 V Drain ... | OCR Scan |
4 pages, |
Diode DR 25 2SK2221 2SK2220 2SJ352 2SJ351 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TOÂ3P Low frequency power amplifier , 2SJ351 Â180 V - 2SJ352 2SJ352 Â200 V , - Drain to source voltage 2SJ351 VDSX Â180 - 2SJ352 2SJ352 V - Â200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX Â180 - - - 2SJ352 2SJ352 ... | Original |
5 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... | Original |
8 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , ) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions Â180 - ... | Original |
8 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-143 2SJ351 abstract |
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| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
6 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 2SJ351 abstract |
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| Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. , protection diodes Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , Â55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... | Original |
10 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 datasheet abstract |
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| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
8 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 datasheet abstract |
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| Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N Channel MOS FET Application TOÂ3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation EnhancementÂmode Good complementary characteristics Equipped with gate protection diodes 3 1 1 Table 1 Ordering Information Type No. 2 3 1. Gate 2. Source 3. Drain 2 VDSS ... | Original |
5 pages, |
2SK2220 2SJ352 2SJ351 2sk2221 2SK2221 2SK2220 abstract |
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| Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Table 1 Ordering Information So(ö-ifSO Preliminary Type No. 'dss TO-3P Ã' 2 2SK2220 2SK2220 180 V 2SK2221 2SK2221 200 V 1. Gate 2. Source 3. Drain Table 2 Absolute Maximum Ratings (Ta = 25°C ... | OCR Scan |
3 pages, |
high power silicon diode 2SK2220 2SJ352 2SJ351 2S135 2SK2221 2SK2220 abstract |
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| Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N-Channel MOS FET ADE-208-1352 ADE-208-1352 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D 1 G 2 S 3 1. Gate 2. Source (Flange) 3. Drain 2SK2220 2SK2220, 2SK2221 2SK2221 ... | Original |
7 pages, |
TO-3P Jedec package outline ADE-208-1352 2SK2220 2SJ352 2SJ351 2SK2221 2SK2220 abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |