NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ351 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
Scan |  |
|
|||||
| 2SJ351 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
4 pages, |
Scan | |
|
|||||
| 2SJ351 | Renesas Technology / Hitachi Semiconductor | FET Transistor, Silicon P-Channel MOS FET |
10 pages, |
Original | |
|
|||||
| 2SJ351 | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
|
|||||
| 2SJ351-E | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
|
|||||
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 2SJ352 VDSX Â180 V Â200 V 2SJ351, 2SJ352 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source ... | Original |
7 pages, |
2SJ351 2SJ352 ADE-208-143 2SJ351 abstract |
|
|||
| Abstract: 2SJ351,2SJ352 2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 2SJ352 Outline TO-3P I 1L U , ) Item Drain to source voltage 2SJ351 2SJ352 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O ... | OCR Scan |
6 pages, |
3J351- 2SJ351 2SJ352 2SJ351 abstract |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier Complementary , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P Ã" 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage VGSS ±20 V Drain ... | OCR Scan |
4 pages, |
SJ-351 2SK2221 2SK2220 2SJ352 2SJ351 Diode DR 25 2SJ351 abstract |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TOÂ3P Low frequency power amplifier , 2SJ351 Â180 V - 2SJ352 2SJ352 Â200 V , - Drain to source voltage 2SJ351 VDSX Â180 - 2SJ352 2SJ352 V - Â200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX Â180 - - - 2SJ352 2SJ352 ... | Original |
5 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 2SJ351 abstract |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... | Original |
8 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 2SJ351 abstract |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , ) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions Â180 - ... | Original |
8 pages, |
2SK2221 2SK2220 2SK222 2SJ352 2SJ351 ADE-208-143 2SJ351 abstract |
|
|||
| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
6 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 2SJ351 abstract |
|
|||
| Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. , protection diodes Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , Â55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... | Original |
10 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 datasheet abstract |
|
|||
| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
8 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 datasheet abstract |
|
|||
| Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N Channel MOS FET Application TOÂ3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation EnhancementÂmode Good complementary characteristics Equipped with gate protection diodes 3 1 1 Table 1 Ordering Information Type No. 2 3 1. Gate 2. Source 3. Drain 2 VDSS ... | Original |
5 pages, |
2SK2220 2SJ352 2SJ351 2sk2221 2SK2221 2SK2220 abstract |
|
|||
| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
|||||
| 2SJ351 TO-3P S -180 -8 1000 800 -12 Mass production TO-3P 2SJ351 2SJ352 2SJ352 2SJ352 2SJ352 www.datasheetarchive.com/files/hitachi/mpp/transistor/pmfgp.html |
Hitachi | 26/09/2002 | 21.21 Kb | HTML | pmfgp.html |
| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P www.datasheetarchive.com/files/hitachi/mpp/html/7410e.htm |
|||||
| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 www.datasheetarchive.com/files/hitachi/mpp/transist/pmosfets/amps/amplifie.htm |
Hitachi | 20/10/2000 | 12.55 Kb | HTM | amplifie.htm |
| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P www.datasheetarchive.com/files/hitachi/mpp/html_old/7410e.htm |
|||||
| No abstract text available www.datasheetarchive.com/download/62059557-29410ZD/pwrmosel.zip (PWRMOSELEC00.XLS) |
Hitachi | 25/10/2000 | 79.32 Kb | ZIP | pwrmosel.zip |
| No abstract text available www.datasheetarchive.com/download/33044571-28965ZD/mpp.csv |
Hitachi | 26/08/2001 | 208.1 Kb | CSV | mpp.csv |
| No abstract text available www.datasheetarchive.com/download/11697323-28963ZD/mpp-vx3.csv |
Hitachi | 16/10/2002 | 233.99 Kb | CSV | mpp-vx3.csv |
| No abstract text available www.datasheetarchive.com/download/81196427-28964ZD/mpp-vx2.csv |
Hitachi | 04/11/2000 | 192.83 Kb | CSV | mpp-vx2.csv |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |