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2SJ351(E) Renesas Electronics MOSFET 143 from $19.60 (Nov 2016) Chip1Stop Buy

2SJ351 Datasheet

Part Manufacturer Description PDF Type Ordering
2SJ351 N/A Catalog Scans - Shortform Datasheet
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1 pages,
76.17 Kb

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2SJ351 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
108.6 Kb

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2SJ351 Hitachi Semiconductor Mosfet Guide
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1147 pages,
6014.32 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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8 pages,
40.1 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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8 pages,
39.69 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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4 pages,
88.72 Kb

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2SJ351 Renesas Technology FET Transistor, Silicon P-Channel MOS FET
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10 pages,
59.14 Kb

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2SJ351 Renesas Technology Silicon P Channel MOS FET
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6 pages,
64.08 Kb

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2SJ351-E Renesas Technology Silicon P Channel MOS FET
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6 pages,
64.08 Kb

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2SJ351

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P Ô 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , Type No. VDSS J 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage ... OCR Scan
datasheet

4 pages,
88.72 Kb

SJ-351 2SK2220 2SJ352 2SJ351 Diode DR 25 2SK2221 TEXT
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 2SJ352 VDSX ­180 V ­200 V 2SJ351, 2SJ352 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source ... Hitachi
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datasheet

7 pages,
38.94 Kb

Hitachi DSA002779 Hitachi 2SJ 2SJ351 2SJ352 ADE-208-143 TEXT
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Abstract: 2SJ351,2SJ352 2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 2SJ352 Outline TO-3P I 1L U , °C) Item Drain to source voltage 2SJ351 2SJ352 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O ... OCR Scan
datasheet

6 pages,
125.64 Kb

Hitachi 2SJ 2SJ352 3J351- 2SJ351 2SK2220 2SK2221 TEXT
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX ­180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... Hitachi Semiconductor
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datasheet

8 pages,
39.69 Kb

Hitachi 2SJ 2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 TEXT
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TO­3P Low frequency power amplifier , 2SJ351 ­180 V - 2SJ352 2SJ352 ­200 V , - Drain to source voltage 2SJ351 VDSX ­180 - 2SJ352 2SJ352 V - ­200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX ­180 - - - 2SJ352 2SJ352 ... Hitachi Semiconductor
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datasheet

5 pages,
26.7 Kb

2SK2221 2SK2220 2SJ352 2SJ351 TEXT
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , °C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX ­180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ­180 - ... Hitachi Semiconductor
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datasheet

8 pages,
40.1 Kb

Hitachi DSA00382 Hitachi 2SJ 2SK2221 2SK2220 2SK222 2SJ351 2SJ352 ADE-208-143 TEXT
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Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st , protection diodes Ordering Information Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , ­55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... Hitachi Semiconductor
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datasheet

10 pages,
59.14 Kb

Hitachi 2SJ 2SK2221 2SK2220 2SJ352 2SJ351 TEXT
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Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 2SJ352 , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS ­200 ±20 V ID IDR 2SJ351 Value ­180 ­8 ­8 A A 100 150 W °C , = ­4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... Renesas Technology
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datasheet

6 pages,
64.08 Kb

SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 TEXT
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Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E , developed or manufactured by or for Renesas Electronics. 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET , Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351, 2SJ352 2SJ352 Absolute Maximum Ratings (Ta = , IDR 2SJ351 Value –180 –8 –8 A A 100 150 W °C –55 to +150 °C , voltage 2SJ351 2SJ352 2SJ352 Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 ... Renesas Technology
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datasheet

8 pages,
95.26 Kb

TEXT
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Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 2SJ352 , . 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS ­200 ±20 V ID IDR 2SJ351 Value ­180 ­8 ­8 A A 100 150 W °C , = ­4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... Renesas Technology
Original
datasheet

8 pages,
77.05 Kb

SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 TEXT
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