NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ351 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
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| 2SJ351 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SJ351 | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
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| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
4 pages, |
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| 2SJ351 | Renesas Technology / Hitachi Semiconductor | FET Transistor, Silicon P-Channel MOS FET |
10 pages, |
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| 2SJ351 | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
Original | |
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| 2SJ351-E | Renesas Technology / Hitachi Semiconductor | Silicon P Channel MOS FET |
6 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 2SJ352 VDSX Â180 V Â200 V 2SJ351, 2SJ352 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source ... | Original |
7 pages, |
2SJ351 2SJ352 ADE-208-143 2SJ351 abstract |
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| Abstract: 2SJ351,2SJ352 2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 2SJ352 Outline TO-3P I 1L U , ) Item Drain to source voltage 2SJ351 2SJ352 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O ... | OCR Scan |
6 pages, |
2SJ351 2SJ352 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier Complementary , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P Ã" 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage VGSS ±20 V Drain ... | OCR Scan |
4 pages, |
SJ-351 2SK2221 2SK2220 2SJ352 2SJ351 Diode DR 25 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TOÂ3P Low frequency power amplifier , 2SJ351 Â180 V - 2SJ352 2SJ352 Â200 V , - Drain to source voltage 2SJ351 VDSX Â180 - 2SJ352 2SJ352 V - Â200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX Â180 - - - 2SJ352 2SJ352 ... | Original |
5 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... | Original |
8 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 2SJ351 abstract |
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| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , ) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX Â180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions Â180 - ... | Original |
8 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-143 2SJ351 abstract |
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| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
6 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 2SJ351 abstract |
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| Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. , protection diodes Ordering Information Type No. VDSX 2SJ351 Â180 V 2SJ352 2SJ352 Â200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , Â55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... | Original |
10 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 datasheet abstract |
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| Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS Â200 ±20 V ID IDR 2SJ351 Value Â180 Â8 Â8 A A 100 150 W °C , = Â4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Original |
8 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 datasheet abstract |
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| Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N Channel MOS FET Application TOÂ3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation EnhancementÂmode Good complementary characteristics Equipped with gate protection diodes 3 1 1 Table 1 Ordering Information Type No. 2 3 1. Gate 2. Source 3. Drain 2 VDSS ... | Original |
5 pages, |
2SK2220 2SJ352 2SJ351 2sk2221 2SK2221 2SK2220 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 2SJ351 TO-3P S -180 -8 1000 800 -12 Mass production TO-3P 2SJ351 2SJ352 2SJ352 2SJ352 2SJ352 www.datasheetarchive.com/files/hitachi/mpp/transistor/pmfgp.html |
Hitachi | 26/09/2002 | 21.21 Kb | HTML | pmfgp.html |
| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P www.datasheetarchive.com/files/hitachi/mpp/html/7410e.htm |
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| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 www.datasheetarchive.com/files/hitachi/mpp/transist/pmosfets/amps/amplifie.htm |
Hitachi | 20/10/2000 | 12.55 Kb | HTM | amplifie.htm |
| 2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P www.datasheetarchive.com/files/hitachi/mpp/html_old/7410e.htm |
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| No abstract text available www.datasheetarchive.com/download/62059557-29410ZD/pwrmosel.zip (PWRMOSELEC00.XLS) |
Hitachi | 25/10/2000 | 79.32 Kb | ZIP | pwrmosel.zip |
| No abstract text available www.datasheetarchive.com/download/33044571-28965ZD/mpp.csv |
Hitachi | 26/08/2001 | 208.1 Kb | CSV | mpp.csv |
| No abstract text available www.datasheetarchive.com/download/11697323-28963ZD/mpp-vx3.csv |
Hitachi | 16/10/2002 | 233.99 Kb | CSV | mpp-vx3.csv |
| No abstract text available www.datasheetarchive.com/download/81196427-28964ZD/mpp-vx2.csv |
Hitachi | 04/11/2000 | 192.83 Kb | CSV | mpp-vx2.csv |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |