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| Part : 2SJ351(E) | Supplier : Renesas Electronics | Manufacturer : Chip1Stop | Stock : 143 | Best Price : $19.00 | Price Each : $24.40 |
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2SJ351 Datasheet
| Part | Manufacturer | Description | Type | |
|---|---|---|---|---|
| 2SJ351 | Hitachi Semiconductor | Mosfet Guide |
|
Original |
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
|
Original |
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
|
Original |
| 2SJ351 | Renesas Technology | FET Transistor, Silicon P-Channel MOS FET |
|
Original |
| 2SJ351 | Renesas Technology | Silicon P Channel MOS FET |
|
Original |
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
|
Scan |
| 2SJ351 | N/A | Catalog Scans - Shortform Datasheet |
|
Scan |
| 2SJ351 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
|
Scan |
| 2SJ351-E | Renesas Technology | Silicon P Channel MOS FET |
|
Original |
2SJ351
| Catalog Datasheet | MFG & Type | Document Tags | |
|---|---|---|---|
2SK2221Abstract: Diode DR 25 2SJ351, 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P Ã" 2 2SJ351 -180 V 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 -200 Gate to source voltage , Type No. VDSS J 2SJ351 -180 V 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 -200 Gate to source voltage |
- OCR Scan |
|
2SK2220 2SK2221 Diode DR 25 SJ-351 SK2220 |
2SJ352Abstract: 2SJ351 2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 VDSX 180 V 200 V 2SJ351, 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source |
Hitachi Original |
|
Hitachi 2SJ Hitachi DSA002779 |
3J351-Abstract: 2SJ352 2SJ351,2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 Outline TO-3P I 1L U , °C) Item Drain to source voltage 2SJ351 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O |
- OCR Scan |
|
3J351- |
2SJ351Abstract: 2SJ352 2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 180 V 2SJ352 200 V 2SJ351, 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX 180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 Max Unit Test conditions |
Hitachi Semiconductor Original |
|
DSA003638 D-85622 |
2SJ351Abstract: 2SJ352 2SJ351, 2SJ352 Silicon P-Channel MOS FET Application TO3P Low frequency power amplifier , 2SJ351 180 V - 2SJ352 200 V , - Drain to source voltage 2SJ351 VDSX 180 - 2SJ352 V - 200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX 180 - - - 2SJ352 |
Hitachi Semiconductor Original |
|
|
2SJ352Abstract: 2SJ351 2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 180 V 2SJ352 200 V 2SJ351, 2SJ352 Outline TO-3P D 1 , °C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX 180 V 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 Max Unit Test conditions 180 - |
Hitachi Semiconductor Original |
|
2SK222 Hitachi DSA00382 |
2SJ351Abstract: 2SJ352 products contained therein. 2SJ351, 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 (Z) 1st , protection diodes Ordering Information Type No. VDSX 2SJ351 180 V 2SJ352 200 V 2SJ351, 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , 55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 Electrical |
Hitachi Semiconductor Original |
|
|
2SJ351Abstract: 2SJ351-E 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 , 2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS 200 ±20 V ID IDR 2SJ351 Value 180 8 8 A A 100 150 W °C , = 4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 |
Renesas Technology Original |
|
PRSS0004ZE-A 2SJ352-E SC-65 |
| Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E , developed or manufactured by or for Renesas Electronics. 2SJ351, 2SJ352 Silicon P Channel MOS FET , Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351, 2SJ352 Absolute Maximum Ratings (Ta = , IDR 2SJ351 Value â'"180 â'"8 â'"8 A A 100 150 W °C â'"55 to +150 °C , voltage 2SJ351 2SJ352 Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 |
Renesas Technology Original |
|
|
2SJ351Abstract: 2SJ351-E 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 , . 2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous: ADE-208-1193) Rev.2.00 Sep 07 , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS 200 ±20 V ID IDR 2SJ351 Value 180 8 8 A A 100 150 W °C , = 4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 |
Renesas Technology Original |
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|
2sk2221Abstract: 2SJ351 2SK2220, 2SK2221 Silicon N Channel MOS FET Application TO3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancementmode Good complementary characteristics Equipped with gate protection diodes 3 1 1 Table 1 Ordering Information Type No. 2 3 1. Gate 2. Source 3. Drain 2 VDSS |
Hitachi Semiconductor Original |
|
N channel MOS FET |
2SK2221Abstract: 2S135 2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Table 1 Ordering Information So(ö-ifSO Preliminary Type No. 'dss TO-3P Ã' 2 2SK2220 180 V 2SK2221 200 V 1. Gate 2. Source 3. Drain Table 2 Absolute Maximum Ratings (Ta = 25 |
- OCR Scan |
|
2S135 high power silicon diode |
| Abstract: 2SK2220, 2SK2221 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features â'¢ High power gain â'¢ Excellent frequency response â'¢ High speed switching â'¢ Wide area of safe operation â'¢ Enhancement-mode â'¢ Good complementary characteristics â'¢ Equipped with gate protection diodes Outline 2SK2220, 2SK2221 Ordering Information Type No. VDSS 2SK2220 180 V 2SK2221 200 |
- OCR Scan |
|
|
LI30VAbstract: Hitachi 2SJ 2SK2220, 2SK2221 Silicon N-Channel MOS FET HITACHI Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching W ide area o f safe operation Enhancement-mode G ood complementary characteristics Equipped with gate protection diodes Outline TO -3P f oD e 1 2 3 1. Gate 2. Source OS (Flange) 3. Drain 891 2SK2220,2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
- OCR Scan |
|
LI30V |
2SJ177Abstract: 2SJ 294 . 400 |
- OCR Scan |
|
2SJ177 2SJ 294 2SJ series 2SJ2 2SJ76 2SJ77 2SJ78 2SJ79 2SJ13 2SJ130CS |
2sj352Abstract: 2SK2220 2SK2220, 2SK2221 Silicon N-Channel MOS FET November 1996 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Ordering Information Type No. 2SK2220 2SK2221 VDSS 180 V 200 V |
Hitachi Original |
|
Hitachi DSA002749 |
2sk2221Abstract: Hitachi 2SJ 2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 |
Hitachi Original |
|
Hitachi DSA002781 |
2SH14Abstract: 2SH11 POWER G eneral amplifier Package code to MOS Package code FET Ratings tD (VdsxKV) (A) (120) 7 (140) 7 (160) 8 180 8 200 8 Voss Type No. - tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 Ratings Vos* j 10 (Vosx)(V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO»® Ciss Status (S itili. 150m 10 10 O 1.0 900 1.0 1.0 1.0 900 O 1.0 1.0 900 a 1.0 - 1000 1.0 1000 - Typa No. ü o o TO-3P 2SK1056 2SK1087 2SK1058 2SK2220 2SK2221 t |
- OCR Scan |
|
4AK19 6AM13 2SH11 2SH19 2SH14 2SH21 6Q/-60 4AK16 4AK17 4AK18 4AK20 |
2SJ351Abstract: 2SJ352 2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D 1 G 2 S 3 1. Gate 2. Source (Flange) 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Symbol |
Hitachi Semiconductor Original |
|
Hitachi DSA00380 |
2SK2221Abstract: 10pE2 2SK2220, 2SK2221 Silicon N-Channel MOS FET ADE-208-1352 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D 1 G 2 S 3 1. Gate 2. Source (Flange) 3. Drain 2SK2220, 2SK2221 |
Hitachi Semiconductor Original |
|
10pE2 HITACHI 2SJ* TO-3 DSA003640 TO-3P Jedec package outline |
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