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2SJ351 Datasheet

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2SJ351 N/A Catalog Scans - Shortform Datasheet
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1 pages,
76.17 Kb

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2SJ351 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
108.6 Kb

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2SJ351 Hitachi Semiconductor Mosfet Guide
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1147 pages,
6014.32 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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8 pages,
40.1 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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8 pages,
39.69 Kb

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2SJ351 Hitachi Semiconductor Silicon P-Channel MOS FET
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4 pages,
88.72 Kb

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2SJ351 Renesas Technology / Hitachi Semiconductor FET Transistor, Silicon P-Channel MOS FET
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10 pages,
59.14 Kb

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2SJ351 Renesas Technology / Hitachi Semiconductor Silicon P Channel MOS FET
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6 pages,
64.08 Kb

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2SJ351-E Renesas Technology / Hitachi Semiconductor Silicon P Channel MOS FET
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6 pages,
64.08 Kb

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2SJ351

Catalog Datasheet Results Type PDF Document Tags
Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 2SJ352 VDSX ­180 V ­200 V 2SJ351, 2SJ352 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source ... Original
datasheet

7 pages,
38.94 Kb

2SJ351 2SJ352 ADE-208-143 2SJ351 abstract
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Abstract: 2SJ351,2SJ352 2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 2SJ352 Outline TO-3P I 1L U , ) Item Drain to source voltage 2SJ351 2SJ352 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O ... OCR Scan
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6 pages,
125.64 Kb

3J351- 2SJ351 2SJ352 2SJ351 abstract
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier Complementary , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P " 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage VGSS ±20 V Drain ... OCR Scan
datasheet

4 pages,
88.72 Kb

SJ-351 2SK2220 2SJ352 2SJ351 Diode DR 25 2SK2221 2SJ351 abstract
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TO­3P Low frequency power amplifier , 2SJ351 ­180 V - 2SJ352 2SJ352 ­200 V , - Drain to source voltage 2SJ351 VDSX ­180 - 2SJ352 2SJ352 V - ­200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX ­180 - - - 2SJ352 2SJ352 ... Original
datasheet

5 pages,
26.7 Kb

2SK2221 2SK2220 2SJ352 2SJ351 2SJ351 abstract
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX ­180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... Original
datasheet

8 pages,
39.69 Kb

2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 2SJ351 abstract
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Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , ) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX ­180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ­180 - ... Original
datasheet

8 pages,
40.1 Kb

2SK2221 2SK2220 2SK222 2SJ352 2SJ351 ADE-208-143 2SJ351 abstract
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Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS ­200 ±20 V ID IDR 2SJ351 Value ­180 ­8 ­8 A A 100 150 W °C , = ­4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... Original
datasheet

6 pages,
64.08 Kb

SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 2SJ351 abstract
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Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. , protection diodes Ordering Information Type No. VDSX 2SJ351 ­180 V 2SJ352 2SJ352 ­200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , ­55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... Original
datasheet

10 pages,
59.14 Kb

2SK2221 2SK2220 2SJ352 2SJ351 datasheet abstract
datasheet frame
Abstract: 2SJ351-E 2SJ352-E 2SJ352-E Quantity 360 pcs 360 pcs Shipping Container Box (Tube) Box (Tube) Note: For , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS ­200 ±20 V ID IDR 2SJ351 Value ­180 ­8 ­8 A A 100 150 W °C , = ­4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... Original
datasheet

8 pages,
77.05 Kb

SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 datasheet abstract
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Abstract: 2SK2220 2SK2220, 2SK2221 2SK2221 Silicon N Channel MOS FET Application TO­3P Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 2SJ352 Features · · · · · · · High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement­mode Good complementary characteristics Equipped with gate protection diodes 3 1 1 Table 1 Ordering Information Type No. 2 3 1. Gate 2. Source 3. Drain 2 VDSS ... Original
datasheet

5 pages,
303.86 Kb

2SK2220 2SJ352 2SJ351 2sk2221 2SK2221 2SK2220 abstract
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Datasheet Content (non pdf)

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2SJ351 TO-3P S -180 -8 1000 800 -12 Mass production TO-3P 2SJ351 2SJ352 2SJ352 2SJ352 2SJ352
www.datasheetarchive.com/files/hitachi/mpp/transistor/pmfgp.html
Hitachi 26/09/2002 21.21 Kb HTML pmfgp.html
2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P
www.datasheetarchive.com/files/hitachi/mpp/html/7410e.htm
2SJ351 TO-3P S (-180) -8 1.0 -12 800
www.datasheetarchive.com/files/hitachi/mpp/transist/pmosfets/amps/amplifie.htm
Hitachi 20/10/2000 12.55 Kb HTM amplifie.htm
2SJ351 TO-3P S (-180) -8 1.0 -12 800 2SJ352 2SJ352 2SJ352 2SJ352 TO-3P
www.datasheetarchive.com/files/hitachi/mpp/html_old/7410e.htm
No abstract text available
www.datasheetarchive.com/download/62059557-29410ZD/pwrmosel.zip (PWRMOSELEC00.XLS)
Hitachi 25/10/2000 79.32 Kb ZIP pwrmosel.zip
No abstract text available
www.datasheetarchive.com/download/33044571-28965ZD/mpp.csv
Hitachi 26/08/2001 208.1 Kb CSV mpp.csv
No abstract text available
www.datasheetarchive.com/download/11697323-28963ZD/mpp-vx3.csv
Hitachi 16/10/2002 233.99 Kb CSV mpp-vx3.csv
No abstract text available
www.datasheetarchive.com/download/81196427-28964ZD/mpp-vx2.csv
Hitachi 04/11/2000 192.83 Kb CSV mpp-vx2.csv

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