500 MILLION PARTS FROM 12000 MANUFACTURERS
500 MILLION PARTS FROM 12000 MANUFACTURERS
| Part | Manufacturer | Description | Last Check | Distributor | Ordering |
| 2SJ351(E) | Renesas Electronics | MOSFET | 143 from $21.2000 (Aug 2016) | Chip1Stop |  |
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ351 | N/A | Catalog Scans - Shortform Datasheet |
1 pages, |
Scan | |
|
|||||
| 2SJ351 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Mosfet Guide |
1147 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
8 pages, |
Original | |
|
|||||
| 2SJ351 | Hitachi Semiconductor | Silicon P-Channel MOS FET |
4 pages, |
Scan | |
|
|||||
| 2SJ351 | Renesas Technology | FET Transistor, Silicon P-Channel MOS FET |
10 pages, |
Original | |
|
|||||
| 2SJ351 | Renesas Technology | Silicon P Channel MOS FET |
6 pages, |
Original | |
|
|||||
| 2SJ351-E | Renesas Technology | Silicon P Channel MOS FET |
6 pages, |
Original | |
|
|||||
| Catalog Datasheet | MFG & Type | Document Tags |
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET \ppIication Low frequency power amplifier , protection diodes Table 1 Ordering Information Type No. VDSS SOb - 1+13 TO-3P à 2 2SJ351 -180 V 2SJ352 2SJ352 , Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage , Type No. VDSS J 2SJ351 -180 V 2SJ352 2SJ352 -200 V Table 2 Absolute Maximum Ratings (Ta = 25°C) item Symbol Ratings Unit Drain to source voltage 2SJ351 VDSX -180 V 2SJ352 2SJ352 -200 Gate to source voltage ... | OCR Scan |
4 pages, |
SJ-351 2SK2220 2SJ352 2SJ351 Diode DR 25 2SK2221 TEXT |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low frequency , complementary characteristics Equipped with gate protection diodes Ordering Information Type No. 2SJ351 2SJ352 2SJ352 VDSX 180 V 200 V 2SJ351, 2SJ352 2SJ352 Outline Absolute Maximum Ratings (Ta = 25°C) Item Drain , Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C 2SJ351 2SJ352 2SJ352 VGSS , A A W °C °C 2 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source ... | Hitachi Original |
7 pages, |
Hitachi DSA002779 Hitachi 2SJ 2SJ351 2SJ352 ADE-208-143 TEXT |
|
|||
| Abstract: 2SJ351,2SJ352 2SJ352 Silicon P-Channel MOS FET H IT / i C H l Application Low frequency power , Type No. 2SJ351 2SJ352 2SJ352 V os* -1 8 0 V -2 0 0 V 407 2SJ351,2SJ352 2SJ352 Outline TO-3P I 1L U , °C) Item Drain to source voltage 2SJ351 2SJ352 2SJ352 Gate to source voltage Drain current Body to drain diode , HITACHI 408 2SJ351,2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 V(8R)GSS V (3 S (o ff) ^ D SIsat) iy j Ciss Coss Crss fon * 0« Symbol Min V(BR)O ... | OCR Scan |
6 pages, |
Hitachi 2SJ 2SJ352 3J351- 2SJ351 2SK2220 2SK2221 TEXT |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st. Edition Mar. 2001 Application , Ordering Information Type No. VDSX 2SJ351 180 V 2SJ352 2SJ352 200 V 2SJ351, 2SJ352 2SJ352 Outline , (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX 180 , Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions ... | Hitachi Semiconductor Original |
8 pages, |
Hitachi 2SJ 2SK2221 2SK2220 2SJ352 2SJ351 ADE-208-1193 TEXT |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET Application TO3P Low frequency power amplifier , 2SJ351 180 V - 2SJ352 2SJ352 200 V , - Drain to source voltage 2SJ351 VDSX 180 - 2SJ352 2SJ352 V - 200 , - * Value at Tc = 25 °C 2SJ351, 2SJ352 2SJ352 Table 3 Electrical Characteristics (Ta = 25°C) Item , - Drain to source breakdown voltage 2SJ351 V(BR)DSX 180 - - - 2SJ352 2SJ352 ... | Hitachi Semiconductor Original |
5 pages, |
2SK2221 2SK2220 2SJ352 2SJ351 TEXT |
|
|||
| Abstract: 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-143 ADE-208-143 1st. Edition Application Low , Type No. VDSX 2SJ351 180 V 2SJ352 2SJ352 200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 , °C) Item Symbol Drain to source voltage 2SJ351 Ratings Unit VDSX 180 V 2SJ352 2SJ352 , 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source 2SJ351 breakdown voltage 2SJ352 2SJ352 Max Unit Test conditions 180 - ... | Hitachi Semiconductor Original |
8 pages, |
Hitachi DSA00382 Hitachi 2SJ 2SK2221 2SK2220 2SK222 2SJ351 2SJ352 ADE-208-143 TEXT |
|
|||
| Abstract: products contained therein. 2SJ351, 2SJ352 2SJ352 Silicon P-Channel MOS FET ADE-208-1193 ADE-208-1193 (Z) 1st , protection diodes Ordering Information Type No. VDSX 2SJ351 180 V 2SJ352 2SJ352 200 V 2SJ351, 2SJ352 2SJ352 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage 2SJ351 Ratings , 55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ351, 2SJ352 2SJ352 Electrical ... | Hitachi Semiconductor Original |
10 pages, |
Hitachi 2SJ 2SK2221 2SK2220 2SJ352 2SJ351 TEXT |
|
|||
| Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 2SJ352 , 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS 200 ±20 V ID IDR 2SJ351 Value 180 8 8 A A 100 150 W °C , = 4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Renesas Technology Original |
6 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 REJ03G0860-0200 ADE-208-1193 TEXT |
|
|||
| Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E , developed or manufactured by or for Renesas Electronics. 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET , Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351, 2SJ352 2SJ352 Absolute Maximum Ratings (Ta = , IDR 2SJ351 Value â180 â8 â8 A A 100 150 W °C â55 to +150 °C , voltage 2SJ351 2SJ352 2SJ352 Turn-off time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 5 ... | Renesas Technology Original |
8 pages, |
TEXT |
|
|||
| Abstract: 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SJ351-E 2SJ352 2SJ352 , . 2SJ351, 2SJ352 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 REJ03G0860-0200 (Previous: ADE-208-1193 ADE-208-1193) Rev.2.00 Sep 07 , . Source (Flange) 3. Drain G 1 Rev.2.00 Sep 07, 2005 page 1 of 5 2 3 S 2SJ351 , VGSS 200 ±20 V ID IDR 2SJ351 Value 180 8 8 A A 100 150 W °C , = 4 A toff - 120 - ns Drain to source breakdown voltage 2SJ351 2SJ352 2SJ352 ... | Renesas Technology Original |
8 pages, |
SC-65 PRSS0004ZE-A 2SK2221 2SK2220 2SJ352-E 2SJ352 2SJ351-E 2SJ351 TEXT |
|
|||