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Part : 2SJ349(F) Supplier : Toshiba Manufacturer : Chip1Stop Stock : 580 Best Price : $18.10 Price Each : $18.10
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2SJ349 Datasheet

Part Manufacturer Description PDF Type
2SJ349 Toshiba P-Channel MOSFET Original
2SJ349 Toshiba Original
2SJ349 Toshiba TRANS MOSFET P-CH 60V 20A 3(2-10R1B) Original
2SJ349 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original
2SJ349 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ349 Toshiba Field Effect Transistor Silicon P Channel MOS Type (Power (L, 2)-pi-MOS V) Scan
2SJ349 Toshiba Silicon P channel field effect transistor for high speed, high current switching applications, DC-DC converter, relay drive and motor drive applications Scan
2SJ349(F,T) Toshiba 2SJ349 - MOSFET P-CH 60V 20A TO-3 Original

2SJ349

Catalog Datasheet MFG & Type PDF Document Tags

j349

Abstract: 2SJ349 2SJ349 2 PMOS (L -MOS) 2SJ349 DC-DC : mm 4V : RDS (ON) = 33m , : () VDD = -50VTch = 25 ()L = 1.44mHRG = 25IAR = -20A 3: MOS 1 2009-12-10 2SJ349 , ) 2003 1 27 (EU 2002/95/EC) 2 2009-12-10 2SJ349 3 2009-12-10 2SJ349 PD ­ Tc , ) 4 2009-12-10 2SJ349 -100 ID MAX. () 100 s -50 1 ms -30 10 ms ID , VDSS MAX. -10 -30 VDS -100 (V) 5 2009-12-10 2SJ349 · · ·
Toshiba
Original
j349 SC-67 2-10R1B VDD-48V

j349

Abstract: transistor j349 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , . 1 2004-07-06 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , lead (Pb)-free finish. 2 2004-07-06 2SJ349 3 2004-07-06 2SJ349 PD ­ Tc DRAIN , 160 Tc 200 (°C) 4 2004-07-06 2SJ349 SAFE OPERATING AREA -100 ID MAX. (PULSED , DRAIN-SOURCE VOLTAGE -30 VDS -100 (V) 5 2004-07-06 2SJ349 RESTRICTIONS ON PRODUCT USE
Toshiba
Original
transistor j349

j349

Abstract: 2SJ349 2SJ349 2 PMOS (L -MOS) 2SJ349 DC-DC : mm 4V : RDS (ON) = 33m , : () VDD = -50VTch = 25 ()L = 1.44mHRG = 25IAR = -20A 3: MOS 1 2009-09-29 2SJ349 , ) 2003 1 27 (EU 2002/95/EC) 2 2009-09-29 2SJ349 3 2009-09-29 2SJ349 PD ­ Tc , ) 4 2009-09-29 2SJ349 -100 ID MAX. () 100 s -50 1 ms -30 10 ms ID , VDSS MAX. -10 -30 VDS -100 (V) 5 2009-09-29 2SJ349 · · ·
Toshiba
Original

2SJ349

Abstract: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -MOSV) 2 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications 4 V gate drive Low drain-source ON resistance High , caution. 1 2002-06-10 2SJ349 Electrical Characteristics (Tc = 25°C) Characteristics Gate , 75 83 Max -20 -80 1.7 - - Unit A A V ns µC Marking 2 2002-06-10 2SJ349 3 2002-06-10 2SJ349 4 2002-06-10 2SJ349 5 2002-06-10 2SJ349 RESTRICTIONS ON PRODUCT
Toshiba
Original

2SJ349

Abstract: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M OS TYPE (L2-tt-M O SV ) 2SJ349 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm DC-DC , contained herein is subject to change without notice. 1999 05-26 - 1/5 TOSHIBA 2SJ349 , ) 1999 05-26 - 2/5 TOSHIBA 2SJ349 id - vds id - vds DRAIN-SOURCE VOLTAGE , 05-26 - 3/5 TOSHIBA 2SJ349 R d s (o n ) - Te iDR - CAPACITANCE - Vd S vds Vth -
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OCR Scan

2SJ349

Abstract: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications l Unit: mm 4 V gate drive l Low drain-source ON resistance : RDS (ON) = 33 m (typ.) l High forward transfer admittance : |Yfs| = 20 , electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SJ349 Electrical , 2SJ349 3 2002-09-02 2SJ349 4 2002-09-02 2SJ349 5 2002-09-02 2SJ349
Toshiba
Original

j349

Abstract: transistor j349 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , 2006-11-16 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain , indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ349 3 2006-11-16 2SJ349 PD ­ Tc 50 DRAIN POWER DISSIPATION PD (W) 40 30 20 10 0 0 40 80 120 160 200 CASE TEMPERATURE Tc (°C) 4 2006-11-16 2SJ349 SAFE OPERATING AREA
Toshiba
Original

2SJ349

Abstract: 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON , caution. 1 2002-09-02 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol , Marking 2 2002-09-02 2SJ349 3 2002-09-02 2SJ349 4 2002-09-02 2SJ349 5 2002-09-02 2SJ349 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to
Toshiba
Original
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2SJ349 HIGH , urrent Enhancement-Mode 2SJ349 INDUSTRIAL APPLICATIONS U nit in mm r 0 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7 , subject to change w ithout notice. 1999 05-26 - 1/5 TO SHIBA 2SJ349 ELECTRICAL , SHIBA 2SJ349 ID - VDS id - vds DRAIN-SOURCE VOLTAGE Vd S (V) DRAIN-SOURCE , ) 1999 05-26 - 3/5 TO SHIBA 2SJ349 Rd s (o n ) - Te IDR - VDS DRAIN-SOURCE VOLTAGE -
OCR Scan

J349

Abstract: 2SJ349 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 2SJ349 , 2006-11-16 2SJ349 3 2006-11-16 2SJ349 PD ­ Tc DRAIN POWER DISSIPATION PD (W) 50 40 , 2006-11-16 2SJ349 SAFE OPERATING AREA -100 ID MAX. (PULSED)* 100 s* -50 DRAIN CURRENT ID , 2006-11-16 2SJ349 RESTRICTIONS ON PRODUCT USE 20070701-EN · The information contained herein is
Toshiba
Original

N7C3

Abstract: TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-M OSV) 2SJ349 , APPLICATIONS 2SJ349 i rt /m INDUSTRIAL APPLICATIONS Unit in mm · · · 4V Gate Drive Low , 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain Cut-off , TO SH IB A 2SJ349 id - vos id - vos DRAIN-SOURCE VOLTAGE V ^S tV) DRAIN-SOURCE , Iß (A) 1998 01-14 3/5 - TO SH IB A 2SJ349 R d s (o n ) - Te IDR - VDS CASE
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OCR Scan
N7C3

j349

Abstract: 2SJ349 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ349 , electrical and electronic equipment. 2 2009-09-29 2SJ349 3 2009-09-29 2SJ349 PD ­ Tc , TEMPERATURE 160 Tc 200 (°C) 4 2009-09-29 2SJ349 SAFE OPERATING AREA -100 ID MAX , DRAIN-SOURCE VOLTAGE -30 VDS -100 (V) 5 2009-09-29 2SJ349 RESTRICTIONS ON PRODUCT USE ·
Toshiba
Original

j349

Abstract: transistor j349 2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ349 DC-DC , 2009-12-10 2SJ349 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition , hazardous substances in electrical and electronic equipment. 2 2009-12-10 2SJ349 3 2009-12-10 2SJ349 PD ­ Tc DRAIN POWER DISSIPATION PD (W) 50 40 30 20 10 0 0 40 80 120 CASE TEMPERATURE 160 Tc 200 (°C) 4 2009-12-10 2SJ349 SAFE
Toshiba
Original
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2- tt-MOSV) 2SJ349 HIGH , urrent Enhancement-Mode 2SJ349 INDUSTRIAL APPLICATIONS U nit in mm 1N JJ 10 ± 0 .3 3.2 ± 0 , notice. # # 1998 01-14 - 3.9 1/5 TOSHIBA 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = , 2SJ349 id - vds id - vds < Q H 2 ¡ I D O DRAIN-SOURCE VOLTAGE VDS (V , 01-14 - 3/5 TOSHIBA 2SJ349 Rd s (o n ) - Te IDR - VDS DRAIN-SOURCE VOLTAGE Vd S -
OCR Scan

Diode FAJ 32

Abstract: 2SJ349 TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , contained herein is subject to change without notice. 1998-01-14 1/5 TOSHIBA 2SJ349 ELECTRICAL , Number of the Christian Era) 1998-01-14 2/5 TOSHIBA 2SJ349 id - vds -10 common source te = 25 , -30 -50 -100 drain current id (a) drain current id (a) 1998-01-14 3/5 TOSHIBA 2SJ349 H O  , 1998-01-14 4/5 TOSHIBA 2SJ349 rth - tv < Q 0.001 10// 100 jU lm 10m 100m pulse width tw (s) safe
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OCR Scan
Diode FAJ 32

2SJ349

Abstract: TOSHIBA 2SJ349 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-?r-MOSV) 2 S J , 2SJ349 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , ) 2000-02-01 2/5 TOSHIBA 2SJ349 id - vds -10 COMMON SOURCE Tc = 25°C h / > 3.5 ! If , ID (A) DRAIN CURRENT ID (A) 2000-02-01 3/5 TOSHIBA 2SJ349 RDS(ON) - Te COMMON SOURCE , 2000-02-01 4/5 TOSHIBA 2SJ349 rth - tv < Q -100 -50 -30 -10 -5 -3 -1 -0.5 Duty = t/T Rth(ch-c) =
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OCR Scan
Abstract: TO SH IBA 2SJ349 Field Effect Transistor Silicon P Channel M O S Type (L 2-ji-MOS V) High Speed, High Current Switching, D C -D C Converter Chopper Regulator and Motor Drive Applications Features · 4V Gate Drive · Low Drain-Source ON Resistance - R DS(ON) = 33mQ (Typ.) · High Forward Transfer Adm ittance - 'Yfs' = 20S (Typ.) · Low Leakage Current - Iqss " "1 OOjiA (Max.) @ V qq = -60V · , . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 1 8 1 2SJ349 Discrete Semiconductors Electrical -
OCR Scan

2n 3904 411

Abstract: 2SB 407 . 179 181 2SJ377
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OCR Scan
TA4100F 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 TOSHIBA 2N 1SV237 1SV239 1SV257 2N4401 2N5401 TA4003F

K2312

Abstract: j378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 ·2SK2312 ·2SK2173 '2SK 2313 '2SK
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OCR Scan
K2312 j378 K2314 T0-220 2SJ378 2SK2200 2SK2201 2SK2314

Jab zener

Abstract: 12 12 38 38 60 60 110 110 170 170 13.5 13.5 48 2SJ360 2S J3 77 *2 S J 3 7 8 2SJ349 2SJ334 2SJ380
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OCR Scan
Jab zener T0-220FL/SM T0220FL/SM T0220AB 2SK2311 2SK2313 2SK2267

2SK2056

Abstract: 2SK1603 2SJ238 2SJ360 2SK578 2SK2882 2SJ239 2SJ377 2SK643 2SK2601 2SJ240 2SJ349
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Original
2SK794 2SK1377 2SK2056 2SK2236 2SK1603 2SK2352 2SK537 2SK1723 2SK1213 2SK2235 2SK2057 2SK3462 2SK2837 2SK2741 2SK2742
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