NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SJ197 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SJ197 | N/A | FET Data Book |
2 pages, |
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| 2SJ197 | NEC Electronics | P-Channel MOS FET for Switching |
6 pages, |
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| 2SJ197 | NEC Electronics | Semiconductor Selection Guide |
399 pages, |
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| 2SJ197 | NEC Electronics | P-CHANNEL MOS FET FOR SWITCHING |
6 pages, |
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| 2SJ197 | NEC Electronics | Semiconductor Selection Guide 1995 |
226 pages, |
Original | |
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| 2SJ197-T1 | NEC Electronics | P-channel MOS FET |
6 pages, |
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| 2SJ197-T2 | NEC Electronics | P-channel MOS FET |
6 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CHANNEL MOS FET FOR SWITCHING PACKAGE , Drain(D) O Ã" Source(S) (Diode in the figure is the parasitic diode.) The 2SJ197, P-channel vertical , © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PARAMETER SYMBOL MIN. TYP. , Temperature-°C FORWARD BIAS SAFE OPERATING AREA -3 -10 -30 -100 VdS - Drairi to Source Voltage-V NEC 2SJ197 , 0 -1 -2 -3 -4 -5 -6 -7 -8 vGS~Cate to Source Voltage-V -9 -10 NEC 2SJ197 DRAIN TO SOURCE ... | OCR Scan |
6 pages, |
2SK1483 2SJ197 2SJ197 abstract |
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| Abstract: from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 , parasitic diode.) The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven , Published November 1994 M Printed in Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS , -100 VdS - Drairi to Source Voltage-V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE , 0 -1 -2 -3 -4 -5 -6 -7 -8 vGS~Cate to Source Voltage-V -9 -10 NEC 2SJ197 DRAIN TO SOURCE ... | OCR Scan |
7 pages, |
2SK1483 2SJ197 2Sj197 data sheet 2SJ197 abstract |
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| Abstract: =T-S> • s/- h mos MOS Field Effect Transistor 2SJ197 mos fet 2SJ197 Ii, Pft TWU» MOS FET T% , Tstg - 55-I-150 55-I-150 °c tfif? TC-7685B TC-7685B(f&3JK) Wn^B November 1994 M © NEC Corporation 1990 NEC 2SJ197 , < Ta = 25 °C ijilg^VUX -3 -10 -30 KM > • y-xBUmEE VDS (V) -100 2 NEC 2SJ197 2.4 , 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 r- h • y-xFsims Vcs (V) 3 NEC 2SJ197 DRAIN TO SOURCE ON-STATE , FORWARD VOLTAGE 4 NEC 2SJ197 Affitti mm&ft ^fflttltfê^f^MMi, ^ >7t/-y 3 >fî4 Wáfflf^^ Xlt^aT/h ... | OCR Scan |
6 pages, |
2SJ197 2SJ197 abstract |
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| Abstract: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.0 +0.1 0.80-0.1 RDS(on)=1.5 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Base 1. Source +0.1 0.40-0.1 +0.1 3.00-0.1 ... | Original |
1 pages, |
transistor smd .PB marking PB 2SJ197 2SJ197 abstract |
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| Abstract: 0.4 -10 -0. 5 2SJ197 NEC SW MOS P E -60 DSS ±20 s ±1 D 2 ±10« ±20 -10« -60 -1 -3 -10 -lm 0.4 -10 , ID=-0. 5A. VDD=-25V 2SK1483 2SK1483 216A SDG 2SJ197 220 0 -10 2 -4 -0. 5 ton=81ns. toff=450nstyp ID=-0. 5A ... | OCR Scan |
2 pages, |
mos-mcs 2S119 2SJ170 2SJ171 2SJ172 2SJ173 2SJ175 2SJ176 2SJ177 2SJ178 2SJ179 2SJ180 2sj196 2S1189 HA 1350S 2SJ170 abstract |
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| Abstract: complementary with the 2SJ197. QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor ... | OCR Scan |
6 pages, |
2SK1483 2SJ197 2SK1483 abstract |
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| Abstract: ton=68ns, toff=660nstyp ID=0. 5A. VDD=25V 2SJ197 216A SDG 2SK1483 2SK1483 230 0 10 0.8 10 0. 5 ton=28ns ... | OCR Scan |
2 pages, |
1493-Z 2SK1471 2SK1470 2SK1469 2SK1468 2SK1467 2SK1466 2SK1465 1496-Z 2SK1472 2SK1473 2SK1491 2SK1484 2SK1482 2SK1475 2SK1465 abstract |
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| Abstract: VGS = 10 V, lD = 0.5 A • Can be used complementary with the 2SJ197. QUALITY GRADE Standard Please ... | OCR Scan |
7 pages, |
2SK1483 2SJ197 2SK1483 abstract |
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| Abstract: 30W35W 2SJ192 2SJ192 2SJ193 2SJ193 2SJ194 2SJ194 2SJ195 2SJ195 2SJ196 2SJ196 2SJ197 2SJ198 2SJ198 2SJ199 2SJ199 2SJ200 2SJ200 -30 -30 -60 -60 -60 -100 ... | Original |
3 pages, |
2SJ125 2sj179 2SJ181 2sj196 2SJ154 2SJ141 2SJ158 2SJ113 2SJ102 2SJ129 2SJ122 2SJ109 2SJ123 transistor 2sj162 2sj110 datasheet abstract |
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| Abstract: mpa1890 2SJ197 -2 0.95 P 2SJ356 2SJ356 -3 0.4 P -3.5 0.19 P -0.1 100 P 2SJ209 2SJ209 , .21,24 2SJ197 ... | Original |
23 pages, |
NP161N04TUG NP110N04PDG NP160N04TUG NP100P04PDG PA2794GR np15p06 2SK3114B 2sk389 D18669JJ3V0SG MOSFET 2sk2488 Data sheet 2sk405 NP180N04TUG NP36P04SDG mpa602t datasheet abstract |
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| Abstract: 2SJ206 2SJ206 2SJ178 2SJ178 2SJ180 2SJ180 2SJ179 2SJ179 2SJ355 2SJ355 2SJ357 2SJ357 2SJ411 2SJ411 2SJ212 2SJ212 2SJ196 2SJ196 2SJ197 2SJ356 2SJ356 2SJ358 2SJ358 2SJ353 2SJ353 ... | Original |
12 pages, |
uPA671T UPA501T transistor k2541 K2055 UPA503T k2070 UPA570T k1482 k2112 N-CH POWER MOSFET TO-92 2SC945 transistor k1272 k2541 K679A datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| 2SJ197 2SJ197 single more. DESCRIPTION The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs having a 5 V power source www.datasheetarchive.com/files/nec/mosfet/product/2sj197.htm |
NEC | 02/02/2000 | 6.46 Kb | HTM | 2sj197.htm |
| 2SJ197-T1/T2 2SJ197-T1/T2 single more. DESCRIPTION The 2SJ197-T1/T2, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs www.datasheetarchive.com/files/nec/mosfet/product/2sj197-t.htm |
NEC | 02/02/2000 | 6.48 Kb | HTM | 2sj197-t.htm |
| 60 V P-channel 60 V P-channel SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Device Package Alternative Package Name V DSS (V) I D (DC) (A) R DS(ON) @V GS =10V max(ohm) R DS(ON) @V GS =4V max(ohm) Packing Q'ty (pcs) one Packing unit Q'ty Technology VGS range 2SJ197 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 3-pin power mini mold / TO-243 -60 -1 1000 1500 25 DSA NL_10V&LL_5V 2SJ197-T1/T2 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 3-pin www.datasheetarchive.com/files/nec/mosfet/series/60vp-c10.htm |
NEC | 02/02/2000 | 10.7 Kb | HTM | 60vp-c10.htm |
| P-channel SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 2SJ197 2SJ197-T1/T2 2SJ212 2SJ212 2SJ212 2SJ212 www.datasheetarchive.com/files/nec/mosfet/family/sc-62sot.htm |
NEC | 02/02/2000 | 16.46 Kb | HTM | sc-62sot.htm |
| = 10V, I D = 0.5A Can be used complementary with the 2SJ197 www.datasheetarchive.com/files/nec/mosfet/product/2sk1483-.htm |
NEC | 02/02/2000 | 6.53 Kb | HTM | 2sk1483-.htm |
| Can be used complementary with the 2SJ197 DOCUMENTATION www.datasheetarchive.com/files/nec/mosfet/product/2sk1483.htm |
NEC | 02/02/2000 | 6.51 Kb | HTM | 2sk1483.htm |
| Part | Similar Part | Notes |