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Part : 2SJ190-TD-E Supplier : SANYO Electric Manufacturer : Rochester Electronics Stock : 6,000 Best Price : - Price Each : -
Part : 2SJ195-TL-E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,100 Best Price : $0.84 Price Each : $1.03
Part : 2SJ196-T-AZ Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 10,000 Best Price : $0.43 Price Each : $0.53
Part : 2SJ199(0)-T1-AZ Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 14,000 Best Price : $0.59 Price Each : $0.72
Part : 2SJ199-T1-AZ Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 6,000 Best Price : $0.57 Price Each : $0.71
Part : 2SJ196(AZ) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 350 Best Price : $3.30 Price Each : $3.80
Part : 2SJ199-T1-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 13 Best Price : $0.5610 Price Each : $1.96
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2SJ197 Datasheet

Part Manufacturer Description PDF Type
2SJ197 Kexin P-Channel MOSFET Original
2SJ197 NEC Semiconductor Selection Guide 1995 Original
2SJ197 NEC Semiconductor Selection Guide Original
2SJ197 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ197 N/A FET Data Book Scan
2SJ197 NEC P-CHANNEL MOS FET FOR SWITCHING Scan
2SJ197 NEC P-Channel MOS FET for Switching Scan
2SJ197-T1 NEC P-channel MOS FET Scan
2SJ197-T2 NEC P-channel MOS FET Scan

2SJ197

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 , parasitic diode.) The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven , Published November 1994 M Printed in Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS , -30 -100 VdS â'" Drairi to Source Voltageâ'"V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT , -10 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2.0 Vqs=-4V Pulse -
OCR Scan
2SK1483 2Sj197 data sheet IEI-1209 MEI-1202 MF-1134
Abstract: =Tâ'"S> â'¢ s/â'" h mos MOS Field Effect Transistor 2SJ197 mos fet 2SJ197 Ii, Pft TWU , November 1994 M © NEC Corporation 1990 NEC 2SJ197 «Ã"W4#tt (Ta = 25 °C) m s m ^ ft MIN. TYP. MAX.  , < Ta = 25 °C ijilg^VUX -3 -10 -30 KM > â'¢ y-xBUmEE VDS (V) -100 2 NEC 2SJ197 , (V) 3 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE , -" u -i y Wiil Ii: SOURCE TO DRAIN DIODE FORWARD VOLTAGE 4 NEC 2SJ197 Affitti mm&ft -
OCR Scan
O2SK1483 I-150 TC-7685B
Abstract: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO , N V DS - - 6 0 V , V GS = 0 V GS " i 2 0 v . V DS = 0 Yds ~ V ' fD = 2SJ197 V D S = - 1 0 V , TC Case Temperature C Vds Dra*n to Source V o ltag " V 60 I NEC 2SJ197 T , rain Current mA V O S ' G ate to Source V oltag e V 602 NEC 2SJ197 D R A IN T O S -
OCR Scan
K1483 1R30-00 S60-00
Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CHANNEL MOS FET FOR SWITCHING PACKAGE , - Drain(D) O Ã" Source(S) (Diode in the figure is the parasitic diode.) The 2SJ197, P-channel vertical , Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PARAMETER SYMBOL , '" Drairi to Source Voltageâ'"V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.4 2.0 1.6 , -10 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2.0 Vqs=-4V Pulse -
OCR Scan
TC-2322A TC-76
Abstract: -8) 2SJ179 (1.5 / SC-62) 2SK1274 (1.0 / SP-8) 2SJ197 (1.5 / SC-62) 2SK1273 (1.0 / SC-62) 2SK2054 (0.25 NEC
Original
SC-59 2SJ211 2SJ178 SC-84 2SJ355 2SK1657 2SK1133 2SJ166 2SK1590 2SK1592 2SJ212
Abstract: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.0 +0.1 0.80-0.1 RDS(on)=1.5 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Base 1. Source +0.1 0.40-0.1 +0.1 3.00-0.1 Kexin
Original
MARKING PB SmD TRANSISTOR SOT-89 marking PB PB SmD TRANSISTOR SOT-89 transistor smd .PB
Abstract: ±1 D 0. 75 ±10« ±20 -10« -60 -1 -3 -10 r -lm 0.4 -10 -0. 5 2SJ197 NEC SW MOS P E -60 DSS  , 216A SDG 2SJ197 220 0 -10 2 -4 -0. 5 ton=81ns. toff=450nstyp ID=-0. 5A, VDD-25V 2SK1484 53D SDG -
OCR Scan
2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 2SJ175 2SJ18 HA 1350S 2S1189 2sj196 2SJ19
Abstract: -92) , 2SK2111 (0.6 / SC-62) , , 2SJ180 (1.5 / SP-8) 2SJ179 (1.5 / SC-62) 2SK1274 (1.0 / SP-8) 2SJ197 NEC
Original
2SK1591 2SK2070 X13769XJ2V0CD00 2SK2858 2SK2541 2sj165 2sk2159 2SK1132 2SJ165 2SJ210 2SK2109 2SK1589 2SJ209
Abstract: 2SJ357 -4 -30 20 3 2SJ212 -4 -60 20 0.5 2SJ197 -4 -60 20 1.5 2SJ356 -4 -60 20 2 2SJ358 -4 -60 20 3 2SJ199 -
Original
2SK680A mmtf1n10 2SK1959 2SK1960 2SK2053 2SK1583 2SK1585 2SK1587
Abstract: - at VGS = 10 V, lD = 0.5 A â'¢ Can be used complementary with the 2SJ197. QUALITY GRADE Standard -
OCR Scan
Abstract: 0-4 n M A X - at V GS = 10 V , lD = 0 .5 A · Can be used com plem entary w ith the 2SJ197. Q -
OCR Scan
Abstract: . VDD=25V 2SJ197 216A SDG 2SK1483 230 0 10 0.8 10 0. 5 ton=28ns, toff=435nstyp ID=0. 5A. VDD -
OCR Scan
2SK1465 2SK1466 2SK1467 2SK1468 2SK1469 2SK1470 2SK1487 LM 1495 2sk1477 2SK1486 1494z
Abstract: ( G ) M A R K : NB G a îe (G ) · Can be used com plem entary w ith the 2SJ197. Q U A LITY -
OCR Scan
I-1209 VP1S00
Abstract: 2SJ192 2SJ193 2SJ194 2SJ195 2SJ196 2SJ197 2SJ198 2SJ199 2SJ200 -30 -30 -60 -60 -60 -100 -
Original
2SJ102 2SJ103 2SJ105 2SJ106 2SJ107 2SJ109 2sj111 2SJ131 2sj155 2sj110 2SJ124 2SJ112 2SJ101 2SJ104
Abstract: 2SJ180 2SJ184 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208 NEC
Original
uPD16305 uPD63724A upc5024 UPC2710 uPD78F0841 2SC1940 PD43256A PD750004 PD750006 PD750008 PD75P0016 PD750104
Abstract: MINI MOLD POWER MINI MOLD MP-3 POWER MINI MOLD POWER MINI MOLD 2SJ16 6 2SJ179 2SJ185 2SJ197 2SJ199 -
OCR Scan
triac tic 236 SCR U 537 transistor su 312 MP25 transistor GA1L32 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220
Abstract: 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208 2SJ209 2SJ210 NEC
Original
uPD72002-11 uPC1237 uPD65656 2sb1099 2SD1392 upc1701 PD750106 PD750108 PD75P0116 PD750064 PD750066 PD750068
Abstract: 2SJ206 2SJ178 2SJ180 2SJ179 2SJ355 2SJ357 2SJ411 2SJ212 2SJ196 2SJ197 2SJ356 2SJ358 2SJ353 NEC
Original
transistor k2541 K1398 J411 fet K1484 K679A k1482 07210-902-G D11050EJ4V0PF00
Abstract: 25 1200 24 -1.5 1.5 P 2SJ197 -2 0.95 P 2SJ356 -3 0.4 P -3.5 , .21,24 2SJ197 NEC
Original
D18669JJ3V0SG MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 PA603T PA606T PA607T PA610TA PA611TA
Abstract: -220AB, TO-262, TO-263 60 40 47 26 2SJ197(0) Pch 2SK3434(0) Nch TO-220AB, TO NEC
Original
PC1099GS PD166104GS PA1915TE uPD166007 mp sot 23 UMOS-4 np PC78L05T 2SJ607 10FIT 30200FIT 30100FIT PC29L03T PC29L33T
Abstract: . VDD=25V 2SJ197 216A SDG 2SK1483 230 0 10 0.8 10 0. 5 ton=28ns, toff=435nstyp ID=0. 5A. VDD -
OCR Scan
K1399 K2158 K1273 1A4M K2111 D82C A1462 2SB624 A1464 B736A K1582 K1133
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