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2SJ197 Datasheet

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2SJ197 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
110.5 Kb

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2SJ197 N/A FET Data Book
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2 pages,
107.12 Kb

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2SJ197 NEC Electronics P-CHANNEL MOS FET FOR SWITCHING
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6 pages,
299.33 Kb

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2SJ197 NEC Electronics Semiconductor Selection Guide 1995
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226 pages,
3177.74 Kb

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2SJ197 NEC Electronics P-Channel MOS FET for Switching
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6 pages,
299.32 Kb

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2SJ197 NEC Electronics Semiconductor Selection Guide
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399 pages,
2932.81 Kb

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2SJ197-T1 NEC Electronics P-channel MOS FET
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6 pages,
299.31 Kb

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2SJ197-T2 NEC Electronics P-channel MOS FET
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6 pages,
299.31 Kb

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2SJ197 Kexin P-Channel MOSFET
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1 pages,
43.07 Kb

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2SJ197

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Abstract: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CHANNEL MOS FET FOR SWITCHING PACKAGE , Drain(D) O " Source(S) (Diode in the figure is the parasitic diode.) The 2SJ197, P-channel vertical , © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PARAMETER SYMBOL MIN. TYP. , Temperature-°C FORWARD BIAS SAFE OPERATING AREA -3 -10 -30 -100 VdS - Drairi to Source Voltage-V NEC 2SJ197 , 0 -1 -2 -3 -4 -5 -6 -7 -8 vGS~Cate to Source Voltage-V -9 -10 NEC 2SJ197 DRAIN TO SOURCE ... OCR Scan
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6 pages,
299.3 Kb

2SK1483 2SJ197 2SJ197 abstract
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Abstract: from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 , parasitic diode.) The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven , Published November 1994 M Printed in Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS , -100 VdS - Drairi to Source Voltage-V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE , 0 -1 -2 -3 -4 -5 -6 -7 -8 vGS~Cate to Source Voltage-V -9 -10 NEC 2SJ197 DRAIN TO SOURCE ... OCR Scan
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7 pages,
305.91 Kb

2SK1483 2SJ197 2Sj197 data sheet datasheet abstract
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Abstract: =T-S> • s/- h mos MOS Field Effect Transistor 2SJ197 mos fet 2SJ197 Ii, Pft TWU» MOS FET T% , Tstg - 55-I-150 55-I-150 °c tfif? TC-7685B TC-7685B(f&3JK) Wn^B November 1994 M © NEC Corporation 1990 NEC 2SJ197 , < Ta = 25 °C ijilg^VUX -3 -10 -30 KM > • y-xBUmEE VDS (V) -100 2 NEC 2SJ197 2.4 , 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 r- h • y-xFsims Vcs (V) 3 NEC 2SJ197 DRAIN TO SOURCE ON-STATE , FORWARD VOLTAGE 4 NEC 2SJ197 Affitti mm&ft ^fflttltfê^f^MMi, ^ >7t/-y 3 >fî4 Wáfflf^^ Xlt^aT/h ... OCR Scan
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6 pages,
369.7 Kb

2SJ197 datasheet abstract
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Abstract: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO , N V DS - - 6 0 V , V GS = 0 V GS " i 2 0 v . V DS = 0 Yds ~ V ' fD = 2SJ197 V D S = - 1 0 V , TC Case Temperature C Vds Dra*n to Source V o ltag " V 60 I NEC 2SJ197 T , rain Current mA V O S ' G ate to Source V oltag e V 602 NEC 2SJ197 D R A IN T O S ... OCR Scan
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5 pages,
185.03 Kb

datasheet abstract
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Abstract: MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.0 +0.1 0.80-0.1 RDS(on)=1.5 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Base 1. Source +0.1 0.40-0.1 +0.1 3.00-0.1 ... Original
datasheet

1 pages,
43.04 Kb

transistor smd .PB 2SJ197 marking PB 2SJ197 abstract
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Abstract: ) , 2SK2111 2SK2111 (0.6 / SC-62 SC-62) , , 2SJ180 2SJ180 (1.5 / SP-8) 2SJ179 2SJ179 (1.5 / SC-62 SC-62) 2SK1274 2SK1274 (1.0 / SP-8) 2SJ197 ... Original
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3 pages,
36.03 Kb

SC-84 2SK2858 2SK2541 2SK1591 SC-62 datasheet abstract
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Abstract: ) , , 2SJ180 2SJ180 (1.5 / SP-8) 2SJ179 2SJ179 (1.5 / SC-62 SC-62) 2SK1274 2SK1274 (1.0 / SP-8) 2SJ197 (1.5 / SC-62 SC-62) 2SK1273 2SK1273 (1.0 ... Original
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3 pages,
39.43 Kb

2SJ178 datasheet abstract
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Abstract: 0.4 -10 -0. 5 2SJ197 NEC SW MOS P E -60 DSS ±20 s ±1 D 2 ±10« ±20 -10« -60 -1 -3 -10 -lm 0.4 -10 , ID=-0. 5A. VDD=-25V 2SK1483 2SK1483 216A SDG 2SJ197 220 0 -10 2 -4 -0. 5 ton=81ns. toff=450nstyp ID=-0. 5A ... OCR Scan
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2 pages,
107.1 Kb

mos-mcs 2S119 2SJ170 2SJ171 2SJ172 2SJ173 2SJ175 2SJ176 2SJ177 2SJ178 2SJ179 2SJ180 2SJ19 2sj196 2S1189 datasheet abstract
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Abstract: 2SJ357 2SJ357 -4 -30 20 3 2SJ212 2SJ212 -4 -60 20 0.5 2SJ197 -4 -60 20 1.5 2SJ356 2SJ356 -4 -60 20 2 2SJ358 2SJ358 -4 -60 20 3 2SJ199 2SJ199 ... Original
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1 pages,
46.62 Kb

2SK680A datasheet abstract
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Abstract: VGS = 10 V, lD = 0.5 A • Can be used complementary with the 2SJ197. QUALITY GRADE Standard Please ... OCR Scan
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7 pages,
285.96 Kb

2SK1483 2SJ197 datasheet abstract
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Datasheet Content (non pdf)

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2SJ197-T1/T2 single more. DESCRIPTION The 2SJ197-T1/T2, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs having a 5 V power source.
www.datasheetarchive.com/files/nec/mosfet/product/2sj197-t.htm
NEC 02/02/2000 6.48 Kb HTM 2sj197-t.htm
2SJ197 single more. DESCRIPTION The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids. FEATURES Directly driven by ICs having a 5 V power source.
www.datasheetarchive.com/files/nec/mosfet/product/2sj197.htm
NEC 02/02/2000 6.46 Kb HTM 2sj197.htm
2SJ197-T1/T2 single DEVICE DETAILS Product Classification Product Group Semi Power Channel Polarity P Technology Process DSA Configuration single Package Package SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Alternative Package Name 3-pin power mini mold / TO-243 Packing Quantity of one packing unit [pcs] 1000 Operation Ranges
www.datasheetarchive.com/files/nec/catalog/p/2sj197-t.htm
NEC 22/03/2001 9.49 Kb HTM 2sj197-t.htm
2SJ197 single DEVICE DETAILS Product Classification Product Group Semi Power Channel Polarity P Technology Process DSA Configuration single Package Package SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Alternative Package Name 3-pin power mini mold / TO-243 Packing Quantity of one packing unit [pcs] 25 Operation Ranges
www.datasheetarchive.com/files/nec/catalog/p/2sj197.htm
NEC 22/03/2001 9.48 Kb HTM 2sj197.htm
2SJ197-T1/T2 single DEVICE DETAILS Product Classification Product Group Semi Power Channel Polarity P Technology Process DSA Configuration single Package Package SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Alternative Package Name 3-pin power mini mold / TO-243 Packing Quantity of one packing unit [pcs] 1000 Operation Ranges
www.datasheetarchive.com/files/nec/mosfet/p/2sj197-t.htm
NEC 01/02/2002 9.82 Kb HTM 2sj197-t.htm
2SJ197 single DEVICE DETAILS Product Classification Product Group Semi Power Channel Polarity P Technology Process DSA Configuration single Package Package SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Alternative Package Name 3-pin power mini mold / TO-243 Packing Quantity of one packing unit [pcs] 25 Operation Ranges
www.datasheetarchive.com/files/nec/mosfet/p/2sj197.htm
NEC 01/02/2002 9.81 Kb HTM 2sj197.htm
2SJ355 2SJ355 2SJ355 2SJ355 2SJ355-T1/T2 2SJ355-T1/T2 2SJ355-T1/T2 2SJ355-T1/T2 60 V P-channel 2SJ197 2SJ197-T1/T2 2SJ212 2SJ212 2SJ212 2SJ212 2SJ212-T1/T2 2SJ212-T1/T2 2SJ212-T1/T2 2SJ212-T1/T2 2SJ356 2SJ356 2SJ356 2SJ356 2SJ356-T1/T2 2SJ356-T1/T2 2SJ356-T1/T2 2SJ356-T1/T2
www.datasheetarchive.com/files/nec/catalog/f/sc-62sot.htm
NEC 22/03/2001 15.85 Kb HTM sc-62sot.htm
2SJ355 2SJ355 2SJ355 2SJ355 2SJ355-T1/T2 2SJ355-T1/T2 2SJ355-T1/T2 2SJ355-T1/T2 60 V P-channel 2SJ197 2SJ197-T1/T2 2SJ212 2SJ212 2SJ212 2SJ212 2SJ212-T1/T2 2SJ212-T1/T2 2SJ212-T1/T2 2SJ212-T1/T2 2SJ356 2SJ356 2SJ356 2SJ356 2SJ356-T1/T2 2SJ356-T1/T2 2SJ356-T1/T2 2SJ356-T1/T2
www.datasheetarchive.com/files/nec/mosfet/f/sc-62sot.htm
NEC 01/02/2002 15.93 Kb HTM sc-62sot.htm
60 V P-channel SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 Device Package Alternative Package Name V DSS (V) I D (DC) (A) R DS(ON) @V GS =10V max(ohm) R DS(ON) @V GS =4V max(ohm) Packing Q'ty (pcs) one Packing unit Q'ty Technology VGS range 2SJ197 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 3-pin power mini mold / TO-243 -60 -1 1000 1500 25 DSA NL_10V&LL_5V 2SJ197-T1/T2 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 3-pin power mini mold / TO-243 -60
www.datasheetarchive.com/files/nec/mosfet/series/60vp-c10.htm
NEC 02/02/2000 10.7 Kb HTM 60vp-c10.htm
60 V P-channel Device Name Device Type Voltage V DSS [V] Polarity (N/P) Technology Package Alternative Package Name Configuration V GS range (*) Current I D (DC) [A] R DS(ON) at V GS =10V max[mOhm] R DS(ON) at V GS =4V max[mOhm] Packing Quantity of one packing unit [pcs] 2SJ197 Semi Power -60 P DSA SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 SC-62/SOT-89 3-pin power mini mold / TO-243 single NL_10V&LL_5V -1 1000 1500 25 2SJ197-T1/T2 Semi Power -60 P DSA SC-62 SC-62 SC-62 SC-62
www.datasheetarchive.com/files/nec/catalog/s/60vp-c11.htm

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