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Part : 2SJ197-T2-AZ Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 3,000 Best Price : $0.63 Price Each : $0.63
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2SJ197 Datasheet

Part Manufacturer Description PDF Type
2SJ197 Kexin P-Channel MOSFET Original
2SJ197 NEC Semiconductor Selection Guide 1995 Original
2SJ197 NEC Semiconductor Selection Guide Original
2SJ197 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SJ197 N/A FET Data Book Scan
2SJ197 NEC P-CHANNEL MOS FET FOR SWITCHING Scan
2SJ197 NEC P-Channel MOS FET for Switching Scan
2SJ197-T1 NEC P-channel MOS FET Scan
2SJ197-T2 NEC P-channel MOS FET Scan

2SJ197

Catalog Datasheet MFG & Type PDF Document Tags

2Sj197 data sheet

Abstract: 2SJ197 from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 , parasitic diode.) The 2SJ197, P-channel vertical type MOS FET, is a switching device which can be driven , Published November 1994 M Printed in Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS , -30 -100 VdS â'" Drairi to Source Voltageâ'"V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT , -10 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2.0 Vqs=-4V Pulse
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OCR Scan
2SK1483 2Sj197 data sheet IEI-1209 MEI-1202 MF-1134

2SJ197

Abstract: =Tâ'"S> â'¢ s/â'" h mos MOS Field Effect Transistor 2SJ197 mos fet 2SJ197 Ii, Pft TWU , November 1994 M © NEC Corporation 1990 NEC 2SJ197 «Ã"W4#tt (Ta = 25 °C) m s m ^ ft MIN. TYP. MAX.  , < Ta = 25 °C ijilg^VUX -3 -10 -30 KM > â'¢ y-xBUmEE VDS (V) -100 2 NEC 2SJ197 , (V) 3 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE , -" u -i y Wiil Ii: SOURCE TO DRAIN DIODE FORWARD VOLTAGE 4 NEC 2SJ197 Affitti mm&ft
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OCR Scan
O2SK1483 I-150 TC-7685B
Abstract: DATA SH EET NEC / MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CH A N N EL MOS FET FOR SW ITCH IN G T h e 2SJ197, P-channei vertical ty p e M OS FE T, is a sw itching P A C K AG E D IM E N S IO , N V DS - - 6 0 V , V GS = 0 V GS " i 2 0 v . V DS = 0 Yds ~ V ' fD = 2SJ197 V D S = - 1 0 V , TC Case Temperature C Vds Dra*n to Source V o ltag " V 60 I NEC 2SJ197 T , rain Current mA V O S ' G ate to Source V oltag e V 602 NEC 2SJ197 D R A IN T O S -
OCR Scan
K1483 1R30-00 S60-00

2SJ197

Abstract: 2SK1483 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CHANNEL MOS FET FOR SWITCHING PACKAGE , - Drain(D) O Ã" Source(S) (Diode in the figure is the parasitic diode.) The 2SJ197, P-channel vertical , Japan © NEC Corporation 1991 NEC 2SJ197 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) PARAMETER SYMBOL , '" Drairi to Source Voltageâ'"V NEC 2SJ197 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.4 2.0 1.6 , -10 NEC 2SJ197 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2.0 Vqs=-4V Pulse
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OCR Scan
TC-2322A TC-76

SC-59

Abstract: sp-8 package -8) 2SJ179 (1.5 / SC-62) 2SK1274 (1.0 / SP-8) 2SJ197 (1.5 / SC-62) 2SK1273 (1.0 / SC-62) 2SK2054 (0.25
NEC
Original
SC-59 2SJ211 2SJ178 SC-84 2SJ355 2SK1657 sp-8 package 2SK1133 2SJ166 2SK1590 2SK1592 2SJ212

MARKING PB SmD TRANSISTOR SOT-89

Abstract: marking PB MOSFET SMD Type MOS Fied Effect Transistor 2SJ197 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance 1 MAX.@VGS=-4.0V,ID=-0.5A 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 MAX.@VGS=-10V,ID=-0.5A +0.1 0.44-0.1 +0.1 2.60-0.1 RDS(on)=1.0 +0.1 0.80-0.1 RDS(on)=1.5 +0.1 4.00-0.1 +0.1 1.80-0.1 1 Gate 1. Base 1. Source +0.1 0.40-0.1 +0.1 3.00-0.1
Kexin
Original
MARKING PB SmD TRANSISTOR SOT-89 marking PB transistor smd .PB PB SmD TRANSISTOR SOT-89

2SJ174

Abstract: 2SJ18 ±1 D 0. 75 ±10« ±20 -10« -60 -1 -3 -10 r -lm 0.4 -10 -0. 5 2SJ197 NEC SW MOS P E -60 DSS  , 216A SDG 2SJ197 220 0 -10 2 -4 -0. 5 ton=81ns. toff=450nstyp ID=-0. 5A, VDD-25V 2SK1484 53D SDG
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OCR Scan
2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 2SJ175 2SJ18 HA 1350S

2sj165

Abstract: X13769XJ2V0CD00 -92) , 2SK2111 (0.6 / SC-62) , , 2SJ180 (1.5 / SP-8) 2SJ179 (1.5 / SC-62) 2SK1274 (1.0 / SP-8) 2SJ197
NEC
Original
2SK1591 2SK2070 X13769XJ2V0CD00 2SK2858 2SK2541 2sj165 2SK1132 2SJ165 2SJ210 2SK2109 2SK1589 2SJ209

2SK2159

Abstract: 2SK680A 2SJ357 -4 -30 20 3 2SJ212 -4 -60 20 0.5 2SJ197 -4 -60 20 1.5 2SJ356 -4 -60 20 2 2SJ358 -4 -60 20 3 2SJ199
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Original
2SK2159 2SK680A mmtf1n10 2SK1959 2SK1960 2SK2053 2SK1583 2SK1585

2SJ197

Abstract: 2SK1483 - at VGS = 10 V, lD = 0.5 A â'¢ Can be used complementary with the 2SJ197. QUALITY GRADE Standard
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OCR Scan

2SJ197

Abstract: 2SK1483 0-4 n M A X - at V GS = 10 V , lD = 0 .5 A · Can be used com plem entary w ith the 2SJ197. Q
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OCR Scan

2SK1487

Abstract: LM 1495 . VDD=25V 2SJ197 216A SDG 2SK1483 230 0 10 0.8 10 0. 5 ton=28ns, toff=435nstyp ID=0. 5A. VDD
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OCR Scan
2SK1465 2SK1466 2SK1467 2SK1468 2SK1469 2SK1470 2SK1487 LM 1495 2sk1477 2SK1480 2SK1486
Abstract: ( G ) M A R K : NB G a îe (G ) · Can be used com plem entary w ith the 2SJ197. Q U A LITY -
OCR Scan
I-1209 VP1S00

2sj111

Abstract: 2SJ131 2SJ192 2SJ193 2SJ194 2SJ195 2SJ196 2SJ197 2SJ198 2SJ199 2SJ200 -30 -30 -60 -60 -60 -100
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Original
2SJ102 2SJ105 2SJ109 2SJ112 2SJ113 2SJ114 2sj111 2SJ131 2sj110 2sj155 2SJ124 2SJ101 2SJ103 2SJ104 2SJ106

uPD16305

Abstract: uPD63724A 2SJ180 2SJ184 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208
NEC
Original
uPD16305 uPD63724A UPC5023 upc5024 uPD65656 UPC2710 PD43256A PD750004 PD750006 PD750008 PD75P0016 PD750104

triac tic 236

Abstract: SCR U 537 MINI MOLD POWER MINI MOLD MP-3 POWER MINI MOLD POWER MINI MOLD 2SJ16 6 2SJ179 2SJ185 2SJ197 2SJ199
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OCR Scan
2SA1611 triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 triac tic 236 c 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220

uPD72002-11

Abstract: uPD16305 2SJ185 2SJ196 2SJ197 2SJ198 2SJ199 2SJ202 2SJ203 2SJ204 2SJ205 2SJ206 2SJ207 2SJ208 2SJ209 2SJ210
NEC
Original
uPD72002-11 uPC1237 upc1701 2sb1099 2SD1392 uPD78F0841 PD750106 PD750108 PD75P0116 PD750064 PD750066 PD750068

transistor k2541

Abstract: K1398 2SJ206 2SJ178 2SJ180 2SJ179 2SJ355 2SJ357 2SJ411 2SJ212 2SJ196 2SJ197 2SJ356 2SJ358 2SJ353
NEC
Original
transistor k2541 K1398 J411 fet K1484 k1482 K679A 07210-902-G D11050EJ4V0PF00

MPA2733GR

Abstract: MPA2733 25 1200 24 -1.5 1.5 P 2SJ197 -2 0.95 P 2SJ356 -3 0.4 P -3.5 , .21,24 2SJ197
NEC
Original
MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 D18669JJ3V0SG PA603T PA606T PA607T PA610TA PA611TA

PD166104GS

Abstract: PA1915TE -220AB, TO-262, TO-263 60 40 47 26 2SJ197(0) Pch 2SK3434(0) Nch TO-220AB, TO
NEC
Original
2SJ607 PD166104GS PA1915TE UMOS-4 np mp sot 23 uPD166007 NP20P06 10FIT 30200FIT 30100FIT PC29L03T PC29L33T

K1273

Abstract: K2158 . VDD=25V 2SJ197 216A SDG 2SK1483 230 0 10 0.8 10 0. 5 ton=28ns, toff=435nstyp ID=0. 5A. VDD
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OCR Scan
K1399 K2158 RD51P K1273 1A4M K2111 D82C A1462 2SB624 A1464 B736A K1582 K1133
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