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Part : ERG2SJ104 Supplier : Panasonic Electronic Components Manufacturer : Avnet Stock : - Best Price : $0.0219 Price Each : $0.04
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Part : ERG-2SJ104 Supplier : Panasonic Electronic Components Manufacturer : Newark element14 Stock : 3,329 Best Price : $0.0420 Price Each : $0.0530
Part : ERG-2SJ104A Supplier : Panasonic Electronic Components Manufacturer : Newark element14 Stock : - Best Price : $0.0590 Price Each : $0.2260
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Part : ERG-2SJ104A Supplier : Panasonic Electronic Components Manufacturer : basicEparts Stock : 3,000 Best Price : - Price Each : -
Part : ERG-2SJ104A Supplier : Panasonic Electronic Components Manufacturer : basicEparts Stock : 30,000 Best Price : - Price Each : -
Part : ERG-2SJ104E Supplier : Panasonic Electronic Components Manufacturer : basicEparts Stock : 30,000 Best Price : - Price Each : -
Part : ERG-2SJ104 Supplier : Panasonic Electronic Components Manufacturer : Chip1Stop Stock : 295 Best Price : $0.0553 Price Each : $0.0712
Part : ERG-2SJ104A Supplier : Panasonic Electronic Components Manufacturer : Chip1Stop Stock : 9,000 Best Price : $0.0437 Price Each : $0.0437
Part : ERG-2SJ104 Supplier : Panasonic Electronic Components Manufacturer : element14 Asia-Pacific Stock : 3,329 Best Price : $0.1020 Price Each : $0.1020
Part : ERG-2SJ104 Supplier : Panasonic Electronic Components Manufacturer : Farnell element14 Stock : 3,329 Best Price : £0.0973 Price Each : £0.3330
Part : RF174-02SJ1-04SP3-0250 Supplier : Samtec Manufacturer : Farnell element14 Stock : - Best Price : £11.98 Price Each : £19.30
Part : ERG-2SJ104 Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 3,789 Best Price : $0.0341 Price Each : $0.0990
Part : ERG-2SJ104A Supplier : Panasonic Electronic Components Manufacturer : Master Electronics Stock : 3,000 Best Price : $0.0364 Price Each : $0.1050
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2SJ104 Datasheet

Part Manufacturer Description PDF Type
2SJ104 N/A FET Data Book Scan
2SJ104 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE Scan
2SJ104 Toshiba P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS) Scan
2SJ104 Toshiba Junction FETs Scan
2SJ104 Toshiba P-Channel MOSFET Scan
2SJ104BL Toshiba TRANS JFET P-CH 2MA 3(2-5F1D) Original
2SJ104GR Toshiba TRANS JFET P-CH 2MA 3(2-5F1D) Original
2SJ104V Toshiba Silicon P-Channel FET Scan
2SJ104Y Toshiba TRANS JFET P-CH 2MA 3(2-5F1D) Original

2SJ104

Catalog Datasheet MFG & Type PDF Document Tags

2SJ104

Abstract: 2SK364 2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 (typ.) (IDSS = -5 mA) · , the typical value IDSS = -5 mA 1 2003-03-25 2SJ104 2 2003-03-25 2SJ104 3 2003-03-25 2SJ104 4 2003-03-25 2SJ104 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA
Toshiba
Original
2SK364 SC-43

2SK364

Abstract: 2SJ104 2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 (typ.) (IDSS = -5 mA) · , IDSS = -5 mA 1 2003-03-25 2SJ104 2 2003-03-25 2SJ104 3 2003-03-25 2SJ104 4 2003-03-25 2SJ104 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually
Toshiba
Original
Toshiba 2SJ

TOSHIBA 2SK364

Abstract: 2SJ104 TOSHIBA 2SJ104 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ104 FOR , 2SJ104 id - vds id - vds (low voltage region) COMMON SOURCE Ta = 25°C GS=' V , °C 2 2001-05-31 TOSHIBA 2SJ104 Ciss - VdS Crss - VGD 300 100 fc 50 30 , TOSHIBA 2SJ104 IGSS - Ta PD - Ta 100p -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C) 120 Q 0 , \ \ \ \ \ \ \ \ 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (°C) 4 2001-05-31 TOSHIBA 2SJ104 RESTRICTIONS ON
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OCR Scan
TOSHIBA 2SK364 IDSS -6.5mA

Toshiba 2SJ

Abstract: 2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Low RDS (ON) = 40 (typ.) (IDSS = -5 mA) Complimentary to 2SK364 Unit , : -10~-20 mA Note 2: Condition of the typical value IDSS = -5 mA 1 2003-03-25 2SJ104 2 2003-03-25 2SJ104 3 2003-03-25 2SJ104 4 2003-03-25 2SJ104 RESTRICTIONS ON PRODUCT
Toshiba
Original

2SJ104

Abstract: 2SK364 2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 (typ.) (IDSS = -5 mA) · Unit: mm , mA 1 2007-11-01 2SJ104 2 2007-11-01 2SJ104 3 2007-11-01 2SJ104 4 2007-11-01 2SJ104 RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL · The information contained
Toshiba
Original

2SJ104

Abstract: 2SK364 TOSHIBA 2SJ104 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ104 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS Unit in mm High , /4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SJ104 id - vds id - , 1997-04-10 2/4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SJ104 Ciss - VdS , ) 1997-04-10 3/4 Powered by ICminer.com Electronic-Library Service CopyRight 2003 TOSHIBA 2SJ104 IGSS - Ta
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OCR Scan
EN3A

2SJ104

Abstract: 2SK364 TOSHIBA 2SJ104 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ104 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS â'¢ High Input , /4 TOSHIBA 2SJ104 -20 id - vds id - vds (low voltage region) -16 -12 COMMON SOURCE Ta = 25 , °C 1997-04-10 2/4 TOSHIBA 2SJ104 Ciss - VdS Crss - VGD 300 100 £ 50 30 , 1997-04-10 3/4 TOSHIBA 2SJ104 IGSS - Ta AMBIENT TEMPERATURE Ta (°C) PD - Ta
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OCR Scan
Abstract: TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2SJ104 i , b je ct to ch a n g e w ith o u t notice. 1997 04-10 - 1/4 TOSHIBA 2SJ104 I d , / / F 1 / / O a N II ö S Sp O Q S c Q a § § oe O C g H / / 2SJ104 TOSHIBA 2SJ104 IGSS - Ta 500 PD - Ta 400 \ 300 \ \ 200 \ \ 75 -
OCR Scan

2sk170 FET

Abstract: fet to92 Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch 2SK367 Nch 2SK208 Nch 2SJ106 Pch 2SK879 Nch 2SJ144 Pch 2SK209 Nch 2SK880 Nch 2SK368 Nch 1 of 1 Polarity , N 3 Junction FET (Lead type) General-purpose 2SJ104 N 3 Junction FET (Lead type
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Original
2sk170 FET fet to92 Junction-FET 2SJ14 fet data book 2SJ-10
Abstract: T O SH IB A 2SJ104 2 S J 1 04 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE Unit in mm FOR AUDIO AM PLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS . 5.1 M AX. â'¢ â'¢ High Input Impedance : I(jgg = 1.0nA (Max.) (V(jg = 25V) Low R ds (ON) = 40à (Typ.) (IdSS = - 5mA) Complimentary to 2SK364 0.45 0.55 M A X. 0.45 M A , TEMPERATURE â  o GATE EXCESS CURRENT I q s X (A) U l ö 2SJ104 T O SH IB A IGSS - Ta -
OCR Scan

2SJ72

Abstract: 2SJ82 IDSS 2SJ104 ms LF A. A-SW J P D 25 GDS -10m G 400m ln 25 -2. 6m -20m -10 0.2 2 -10 -0.1 u 12m 30m , 82B SGD 2SJ103 105 32 0 -10 40typ 0 -5m 2SK364 82C DGS 2SJ104 18 3. 6 0 -10 270 typ 0 -5m
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OCR Scan
2SJ69 2SJ72 2SJ73 2SJ75 2SJ76 2SJ77 2SJ82 2SJ96 2SJ99 2SJ83 2SJ70

2SK364

Abstract: TOSHIBA 2SK364 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA) · Complementary to 2SJ104 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS -40 V Gate current IG 10
Toshiba
Original

2SJ111

Abstract: 2SJ110 -1.2â'"14 -10 0 4.0 -10 0 3.6 10 1 - - - - - (SIS) 2SJ104 25 -10 400 -2.6â'"20 -10 0 30 -10 0 32 10 1 _ - -
-
OCR Scan
2SJ110 2SJ111 2sj111 fet

2Sj148

Abstract: 2sc3281 Yfsl (mS) ©lDss=5mA 4 19 30 40 Ros (ON) a 320/270 80 50/40 36 2SK880 _ - _ - 2SJ104
-
OCR Scan
2SC3180N 2Sj148 2sc3281 2sc4793 2sd1408 2SC2705 2SC1627A 2SC2235 2SC2236 2SC3423 2SC3419

TOSHIBA 2SK364

Abstract: 2SK364 TOSHIBA 2SK364 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 4 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS â'¢ High Breakdown Voltage â'¢ High Input Impedance â'¢ Low RDs (ON) â'¢ Complementary to 2SJ104 MAXIMUM RATINGS (Ta = 25°C) : VGDS=-40V : Iqss = - l.OnA (Max.) (VGS= -30V) : RDS(ON) = 50n(Typ.) (IDSS = 5mA) CHARACTERISTIC Gate-Drain Voltage Gate Current SYMBOL VGDS IG RATING -40 10 UNIT V mA Unit in mm 5.1
-
OCR Scan

2SK364

Abstract: 2SJ104 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · Unit: mm High breakdown voltage: VGDS = -40 V · High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) · Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA) · Complementary to 2SJ104 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VGDS -40 V Gate current IG 10
Toshiba
Original

2sj111 fet

Abstract: 2SJ111 2SK246 2SK362 2SK363 2SK364 2SK369 2SK373 2SJ74 2SJ103 2SJ104 2SJ110 2SJ111 P-Channel V GDS (V) -5 0 -5 0
-
OCR Scan
2SK30A
Abstract: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA) Complementary to 2SJ104 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature Toshiba
Original

2SJ72BL

Abstract: PN4342 Indust Mexi !OSniba~rp ~~ 12m 12m 12m 12m 12m 15m 16m 20m 20m ~t:~g; 75 2SJ104 UCS05 2N4343
Central Semiconductor
Original
PN4360 2N4360 2SJ74Y 2SJ74GR BFT11 2SJ72GR 2SJ72BL PN4342 2SJ72-G 2sj74bl 2N2500 2N3332 2N2498 2N3330 2N4089 UCS51

2SJ104

Abstract: 2SK364 TOSHIBA 2SK364 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 6 4 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS â'¢ High Breakdown Voltage â'¢ High Input Impedance â'¢ Low rDs (ON) â'¢ Complementary to 2SJ104 MAXIMUM RATINGS (Ta = 25°C) : VGDS=-40V : iqss = - l.OnA (Max.) (VGS= -30V) â'¢ RDS (ON) = 500 (Typ.) (IDSS = 5mA) CHARACTERISTIC Gate-Drain Voltage Gate Current SYMBOL VGDS IG RATING -40 10 UNIT V mA Unit in mm 5.1
-
OCR Scan
EIAJ C-3

2SJ74

Abstract: 2SC3136 50 -10 300 -1.2~-14 -10 0 4.0 -10 0 Analog SW&General Purpose 2SJ104
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Original
2SC1815 2SA1015 2SC732TM 2SC2240 2SC3329 2SA1316 2SC3136 2SC1815 2SA1015 2SA1349 2sc2240 equivalent 2SA970

2SK364

Abstract: Toshiba 2SJ 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = -40 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low RDS (ON): RDS (ON) = 50 (typ.) (IDSS = 5 mA) Complementary to 2SJ104 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol
Toshiba
Original
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