500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : HW-14-12-S-D-965-SM Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $3.99 Price Each : $5.89
Part : HW-14-12-S-D-965-SM Supplier : Samtec Manufacturer : Newark element14 Stock : 29 Best Price : $3.81 Price Each : $6.87
Part : 2SD965-R Supplier : DC Components Manufacturer : TME Electronic Components Stock : 1,120 Best Price : $0.0475 Price Each : $0.1530
Part : HW-14-12-S-D-965-SM Supplier : Samtec Manufacturer : Samtec Stock : 29 Best Price : $4.87 Price Each : $4.87
Shipping cost not included. Currency conversions are estimated. 

2SD965 Datasheet

Part Manufacturer Description PDF Type
2SD965 Kexin Silicon NPN epitaxial planar type Original
2SD965 N/A NPN SILICON TRANSISTOR Original
2SD965 Panasonic Silicon NPN epitaxial planer type transistor Original
2SD965 Panasonic NPN Transistor Original
2SD965 TY Semiconductor Silicon NPN epitaxial planar type - SOT-89 Original
2SD965 Various Russian Datasheets Transistor Original
2SD965 Wing Shing Computer Components TRANSISTOR (NPN) Original
2SD965 N/A The Transistor Manual (Japanese) 1993 Scan
2SD965 N/A Transistor Substitution Data Book 1993 Scan
2SD965 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD965 N/A The Japanese Transistor Manual 1981 Scan
2SD965 N/A Transistor Shortform Datasheet & Cross References Scan
2SD965 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD965 N/A Shortform Transistor PDF Datasheet Scan
2SD965 N/A Japanese Transistor Cross References (2S) Scan
2SD965A Unisonic Technologies LOW VOLTAGE HIGH CURRENT TRANSISTOR Original
2SD965B Unisonic Technologies LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR Original
2SD965K Kexin Silicon NPN epitaxial planar type Original
2SD965K TY Semiconductor Silicon NPN epitaxial planar type - SOT-89 Original
2SD965-Q Kexin NPN Silicon Epitaxial Transistors Original
Showing first 20 results.

2SD965

Catalog Datasheet MFG & Type PDF Document Tags

2SD965

Abstract: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current , 150 800 1 150 UNISONIC TECHNOLOGIES CO. LTD V MHz 1 QW-R201-007,B UTC 2SD965/A
Unisonic Technologies
Original
2SD965/A

2SD965

Abstract: 2SD965AL : 2SD965L/2SD965AL ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD965-x-AB3-R 2SD965L-x-AB3-R 2SD965-x-T92-B 2SD965L-x-T92-B 2SD965-x-T92-K 2SD965L-x-T92-K 2SD965-x-TN3-R 2SD965L-x-TN3-R 2SD965-x-TN3-T 2SD965L-x-TN3-T 2SD965A-x-AB3-R 2SD965AL-x-AB3-R 2SD965A-x-T92-B 2SD965AL-x-T92-B 2SD965A-x-T92-K 2SD965AL-x-T92-K 2SD965A-x-TN3-R 2SD965AL-x-TN3-R 2SD965A-x-TN3-T 2SD965AL-x-TN3-T Package SOT , Reel Tape Box Bulk Tape Reel Tube Tape Reel Tape Box Bulk Tape Reel Tube 2SD965L-x-AB3-R
Unisonic Technologies
Original
2sd965 transistor 2SD965L/2SD965AL 2SD965- 2SD965L- 2SD965A-

sot 89 2sd965

Abstract: 2SD965 UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Emitter-base voltage Collector dissipation(Ta , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC , UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE Q 230-380 R
Unisonic Technologies
Original
sot 89 2sd965 QW-R208-003

2SD965

Abstract: 2SD965AL-AB3-R : 2SD965L/2SD965AL PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead Free 2SD965-AB3-R 2SD965L-AB3-R 2SD965A-AB3-R 2SD965AL-AB3-R Package SOT , 2SD965 Breakdown Voltage 2SD965A Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off , UNISONIC TECHNOLOGIES CO.,LTD. 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to
Unisonic Technologies
Original
ab3r

2SD965

Abstract: 2SD965AL Normal 2SD965-x-AB3-R 2SD965-x-T92-B 2SD965-x-T92-K 2SD965-x-TN3-R 2SD965A-x-AB3-R 2SD965A-x-T92-B 2SD965A-x-T92-K 2SD965A-x-TN3-R Ordering Number Lead Free Halogen Free 2SD965L-x-AB3-R 2SD965G-x-AB3-R 2SD965L-x-T92-B 2SD965G-x-T92-B 2SD965L-x-T92-K 2SD965G-x-T92-K 2SD965L-x-TN3-R 2SD965G-x-TN3-R 2SD965AL-x-AB3-R 2SD965AG-x-AB3-R 2SD965AL-x-T92-B 2SD965AG-x-T92-B 2SD965AL-x-T92-K 2SD965AG-x-T92-K 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
Unisonic Technologies
Original
2SD965AG 2SD965G/2SD965AG 2SD965G- 2SD965AL- 2SD965AG-

2SD965

Abstract: UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Emitter-base voltage Collector power dissipation , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC , 2SD965 /A PARAMETER NPN EPITAXIAL SILICON TRANSISTOR SYMBOL fT Cob TEST CONDITIONS VCE=6V,Ic
Unisonic Technologies
Original
QW-R209-007
Abstract: Lead Free Halogen Free 2SD965G-x-AB3-R SOT-89 2SD965L-x-T92-B 2SD965G-x-T92-B TO-92 2SD965L-x-T92-K 2SD965G-x-T92-K TO-92 2SD965L-x-TN3-R 2SD965G-x-TN3-R TO-252 2SD965AG-x-AB3-R SOT-89 2SD965AL-x-T92-B 2SD965AG-x-T92-B TO-92 2SD965AL-x-T92-K 2SD965AG-x-T92-K TO-92 2SD965AL-x-TN3-R 2SD965AG-x-TN3-R TO , MARKING 2SD965 2SD965A SOT-89 TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD , =25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO 2SD965 2SD965A Unisonic Technologies
Original
Abstract: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , circuit TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965L/2SD965AL , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown Unisonic Technologies
Original
Abstract: Ordering Number Lead Free 2SD965L-x-AB3-R 2SD965L-x-T92-B 2SD965L-x-T92-K 2SD965L-x-TN3-R 2SD965AL-x-AB3-R 2SD965AL-x-T92-B 2SD965AL-x-T92-K 2SD965AL-x-TN3-R Halogen Free 2SD965G-x-AB3-R 2SD965G-x-T92-B 2SD965G-x-T92-K 2SD965G-x-TN3-R 2SD965AG-x-AB3-R 2SD965AG-x-T92-B 2SD965AG-x-T92-K 2SD965AG-x-TN3-R , 2SD965 2SD965A VEBO SOT-89 TO-92 TO-252 UNIT V V V V mW 750 1 5 VCEO , Voltage 2SD965 Collector-Emitter Breakdown Voltage 2SD965A Emitter-Base Breakdown Voltage Collector Unisonic Technologies
Original

2SD965

Abstract: 2sd965 transistor UTC 2SD965 /A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Emitter-base voltage Collector power dissipation Collector current Junction , CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A , 230 150 UNISONIC TECHNOLOGIES CO. LTD 800 1 V 1 QW-R209-007,A UTC 2SD965 /A NPN
Unisonic Technologies
Original
Abstract: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , Collector-base voltage Collector-emitter voltage 2SD965 2SD965A Collector-emitter voltage Emitter-base , voltage 2SD965 2SD965A Emitter-base breakdown voltage Collector cut-off current Emitter cut-off , TECHNOLOGIES CO. LTD 50 V MHz pF 1 QW-R201-007,B UTC 2SD965/A NPN EPITAXIAL SILICON Unisonic Technologies
Original
Abstract: UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , circuit TO-92 1: EMITTER 2: COLLECTOR 3: BASE *Pb-free plating product number: 2SD965L/2SD965AL , 2SD965 2SD965A Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta , Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A Emitter-base breakdown Unisonic Technologies
Original

2sd965

Abstract: 2SD965A UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965 : Collector-Emitter voltage up to 20 V * 2SD965A , 2SD965 2SD965A Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction , CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage 2SD965 2SD965A , . LTD V MHz 1 QW-R208-003,B UTC 2SD965/A NPN EPITAXIAL SILICON TRANSISTOR PARAMETER
Unisonic Technologies
Original
Abstract: 2SD965 NPN Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2SD965 TRANSISTORï¼ NPN ) TO i 92 FEATURES 1.EMITTER Power dissipation PCM : 0.75 Collector current ICM : 5 Wï¼Tamb=25â"ƒï¼‰ 2. COLLECTOR 3 , of 3 2SD965 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Transistor Any changing of specification will not be informed individual Page 2 of 3 2SD965 NPN SeCoS
Original
270TYP 050TYP
Abstract: Transistors IC SMD Type NPN Silicon Epitaxial Transistors 2SD965-Q SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 â  Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 the low-voltage , MHz â  Marking Marking D965Q www.kexin.com.cn 1 Transistors IC SMD Type 2SD965-Q Kexin
Original

2SB600 NEC

Abstract: 2SD965 - 255 - m « Type No. tt « Manuf. z ft SANYO 3K S TOSHIBA 0 a NEC 0 fi HITACHI * ± a FUJITSU fé T MATSUSHITA Z » MITSUBISHI â¡ â'" A ROHM 2S0 1951 B m 2SD879 2SC3266 2SD965 2SD 1952 â'ž s a 2SD1624 2SC2873 2SD1119 2SD1963 2SD 1953 ^ = m 2SD1692 2SD1233 2 SD 1955 2SC4339 2SD1261 2SD 1956 â¡ â'"A 2SD866 2SD 1957 â¡ â'"A 2SD1271 2SD 1 958 f- H £ 2SC3299 2SD1270 2SD 1959,- 0 li 2SD1887 2SD1548 2SC3975 2SD 1960 â¡ -A 2SD965 2SD 1961 ~ â
-
OCR Scan
2SD966 2SB600 2SC3421 2SD1483 2SC3281 2SD400 2SB600 NEC 2SD2061 1951b 2sc3677 2SD1145 2SC3671 2SC2594 2SD1628 2SC4541

2SD965

Abstract: C8010 ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , ST 2SD965 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit P hFE 120 , ST 2SD965 P C - Ta I C - VCE 1000 I C - VBE 2.4 6 VCE=2V Ta=25 C I B =7mA
Semtech Electronics
Original
C8010
Abstract: ƒ(DUTY=1/2) ç‡æ³¡ R 2SD965 KEY 3 2 1 L3 L2 L1 HILO OSCI OPT1 15 VSS , 11 12 12 ç‡ ä½¿ ç"¨ OFF å¨ äº®(60Hz, DUTY=4/5) å¨ éƒ(DUTY=1/2) ç‡æ³¡ R 2SD965 , ³¡ R2 2SD965 KEY 3 2 1 L3 L2 L1 HILO KEY OPT2 16 5 CDT3176 OPT1 , . OFF B. å¨äº® - 60Hz, 4/5 DUTY C. å¨äº® - 1/2 DUTY R1 ç‡æ³¡ R2 2SD965 KEY 3 2 Bowin Electronic
Original
CDT-3176--- CDT-3176

IN4148

Abstract: IN4-148 ç'ºä½é›»å£"指示,可ç"±å¤æ¥é›»é˜»ä¾èª¿æ•´åµæ¸¬é›»å£"點ã'' (3). L1 â'" 正輸出(+2SD965 æ¨ç‡æ³¡), L2 å L3 â'" 負輸出(直æ¥æ , 12 ç"¨ 線 è·¯ 3VDC ç‡æ³¡ 2SD965 4 3 2 LED L3 L2 1 KEY 6 OSCO , 2SD965 1 KEY 6 OSCO 7 OSCI 8 VIN VREF PS 470K CDT3272 9 470uF (ç©©å , ° 更æºç¢ºçš"偵測電å£"å'¼ã'' â  L1 + 470 uF (ç©©å£") - 2SD965 30 LED 29 L3 28 L2 27 L1 24
Bowin Electronic
Original
IN4148 IN4-148 iN4148+5t CDT-3272 CDT7230

2sd965 transistor

Abstract: 2SD96 ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 ST 2SD965 Characteristics , ) ® Dated : 11/08/2003 ST 2SD965 P C - Ta I C - VCE I C - VBE 6 2.4 1000 VCE=2V Ta
Semtech Electronics
Original
2SD96
Showing first 20 results.