2SD596 - Datasheet Archive

 

2SD596 TRANSISTOR (NPN) SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À 05 0. 1. 60¡

 

2SD596 2SD596 2SD596 2SD596 TRANSISTOR (NPN) SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR 2. 80¡ À 05 0. 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.7 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 2. 92¡ À0. 05 W (Tamb=25) 0. 95¡ À 025 0. 0.2 1. 02 2. EMITTER PCM: TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=30 V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 µA hFE(1)* VCE= 1V, IC= 100mA 110 hFE(2)* VCE=1V, IC= 700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=700 mA, IB= 70mA Base-emitter voltage VBE(on) * VCE=6V, IC=10mA 0.6 Transition frequency fT VCE= 6V, IC= 10mA 400 140 DC current gain 0.6 V 0.7 V MHz * Pulse test : Pulse width 350µs, Duty Cycle2%. CLASSIFICATION OF hFE(1) Marking Range DV1 DV2 DV3 DV4 DV5 110-180 135-220 170-270 200-320 250-400 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com