500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
DW-14-12-S-D-525 Samtec Inc Board Stacking Connector, 28 Contact(s), 2 Row(s), Male, Straight, Solder Terminal visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : DW-14-12-S-D-525 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $3.1139 Price Each : $4.5366
Part : ESQT-108-02-S-D-525 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $3.4304 Price Each : $4.4065
Part : ESQT-110-02-S-D-525 Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $4.0760 Price Each : $5.2358
Part : MTSW-112-12-S-D-525-RA Supplier : Samtec Manufacturer : Avnet Stock : - Best Price : $3.0380 Price Each : $3.9024
Shipping cost not included. Currency conversions are estimated. 

2SD525 Datasheet

Part Manufacturer Description PDF Type
2SD525 Micro Commercial Components NPN Silicon Power Transistor Original
2SD525 Wing Shing Computer Components LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL) Original
2SD525 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SD525 Mospec 5 A/100 V NPN Power Transistor Scan
2SD525 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SD525 N/A Semiconductor Master Cross Reference Guide Scan
2SD525 N/A Scan
2SD525 N/A The Transistor Manual (Japanese) 1993 Scan
2SD525 N/A Transistor Substitution Data Book 1993 Scan
2SD525 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD525 N/A Shortform Transistor Datasheet Guide Scan
2SD525 N/A The Japanese Transistor Manual 1981 Scan
2SD525 N/A Transistor Shortform Datasheet & Cross References Scan
2SD525 N/A Basic Transistor and Cross Reference Specification Scan
2SD525 N/A Shortform Transistor PDF Datasheet Scan
2SD525 N/A Japanese Transistor Cross References (2S) Scan
2SD525 N/A Cross Reference Datasheet Scan
2SD525 N/A Catalog Scans - Shortform Datasheet Scan
2SD525 N/A Catalog Scans - Shortform Datasheet Scan
2SD525 Toshiba Japanese Transistor Data Book Scan
Showing first 20 results.

2SD525

Catalog Datasheet MFG & Type PDF Document Tags

2SD5250

Abstract: 2SD525 . CLASSIFICATION MIN. MAX. 2SD525-R 40 80 2SD525-0 70 â'¢ 140 2SD525-Y 120 240 934 2sd525 Ic-VcE (L0W VOLTAGE , * 2sd525 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o %ummm o Power Amplifier Applications â'¢ Hi-Pi 7 y 7,thtl&iK&Lt-r ; PC = 40WCTo=85-C) â'¢ ¡SiWEr^o : VCEO = 100V â'¢ iSfflmff^'h-S^ : VCE(sat) = 8.0 V (Max .) â'¢ 3SB595 ') /yfiVK&bi-to ^3ow ai-ri 7 4 *7 y yinti&tKmm-c-ro â , -55 ~ 150 933 2sd525 "SSWIitt ELECTRICAL CHARACTERISTICS (Ta = 25*C) CHARACTERISTIC SYMBOL
-
OCR Scan
2SD5250 transistor 2sd525 a935 2SD525R A 935 AC75 40WCT 220AB SC-46 Z-10A1A

2SD525

Abstract: 2SB595 Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high , Storage temperature -55~150 TC=25 Inchange Semiconductor Product Specification 2SD525 , Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors PACKAGE OUTLINE TOR
-
Original

2SD454

Abstract: 2SC901 2SC2073 9 c m i
-
OCR Scan
2SC1449 2SD473 2SD647 2SD400 2SD867 2SC901 2SD454 2SC1667 2SC2516 NEC 2SD400 E 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633

transistor 2sd525

Abstract: 2SD525 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 POWER AMPLIFIER APPLICATIONS 2SD525 10.3MAX. Unit in mm ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1()OV Low Collector Saturation Voltage : Vce ( s a t ) " 2.0V (Max.) Complementary to 2SB595. Recommend for 30W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC , 0 0 U1 1 NJ 1 2SD525 TO SH IBA 2SD525 RESTRICTIONS ON PRODUCT USE 000707EAA
-
OCR Scan
2-10A1A

2SD525

Abstract: 2SB595 Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high , 2SD525 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , JMnic MIN TYP. MAX UNIT 240 Product Specification www.jmnic.com 2SD525
JMnic
Original
NIC Components 2SD525

2SC1885

Abstract: 2Sc2565 - 221 - m * * * * 2SD725 2SD726 2SD727 ^ ^ ^ 0 0 tö &' 0 0 0 & Manuf. s = SANYO 2SD823 * TOSHIBA 2SD2233 2SD821 2SD1060 2SD525 2SD716 2SD718 a NE C « S HITACHI ±L 2SD1136 Ï T y p e No. 2SD 7 2 4 _ ± FUJITSU il fô T MATSUSHITA = * - A ROHM 2SC4007 MITSUBISHI ft cn fi i T T 2SD1135 2SD1712 2SD1110 2SD1559 2SD1559 , 2SC3245 2SC3377 2SC3800 2SC3800 2SD2052 2SD525 2SD525 2SD845 2SD845 2SC2060 2SC400T 2SÜ1896 2SD 743 -
-
OCR Scan
2SD842 2SD2256 2SD427 2SD551 2SC1940 2SC1885 2Sc2565 2SC2565 fujitsu IL 741 2sd1047 2SD2064 2SD1046 2SD1Q47 2SD2255

2SD525

Abstract: 2SB595 SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend , -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD525
-
Original

transistor 2sd525

Abstract: 2SD525 TOSHIBA 2SD525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 POWER AMPLIFIER APPLICATIONS Unit in mm â'¢ High Breakdown Voltage : VceO = !OOV â'¢ Low Collector Saturation Voltage : VqE (sat) = 2.0V (Max.) â'¢ Complementary to 2SB595. â'¢ Recommend for 30W High Fidelity Audio Frequency , 1 2001-05-24 TOSHIBA 2SD525 IC - VCE hFE - IC 300 150^ 2 1C >0_ 200 , 2SD525 RESTRICTIONS ON PRODUCT USE _000707E â'¢ TOSHIBA is continually working to improve the quality
-
OCR Scan
T0-220AB

2SD650

Abstract: 2SC4711 2SD 712 â" h m 2SD613 2SD525 2SD743A 2SD1135 2SD96Û 2SD1896 2SD 713 / h « 2SD613 2SD525 2SD1135
-
OCR Scan
2SC2139 2SC3144 2SD560 2SD1275A 2SD1190 2SD1276A 2SD650 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD837B 2SD213Z 2SD1932

2SD525

Abstract: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. FEATURES: · High Breakdown Voltage : V q £q =100V · Low Collector Saturation Voltage : VcE (sat) = 2 .0V(Max.) · Complementary to 2SB595. · Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. wÛ 0 3 .6 * 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage , 863 2SD525 COLLECTOR CURR E N T Ic (a ) COLLECTOR CURRENT Ic (A ) COLLECTOR
-
OCR Scan

2SD525

Abstract: 2SD525 POWER AMPLIFIER APPLICATIONS. FEATURES: SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm jZ Í3 .6 ± 0 .2 High Breakdown Voltage : VCEO=100V Low Collector Saturation Voltage : VCE(sat)=2.0V(Max.) · Complementary to 2SB595. Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) SYMBOL vCB0 vCE0 V eb o ic IE CHARACTERISTIC , ) sa t u r a t io n V G E (eat) v o l t a g *: W DC CURRENT G A IN hw 2SD525
-
OCR Scan

2SC1135

Abstract: 2SC1168 2SÃ818 2SC 1444 â Ã¶-virv 2sd525 2SC 1445 ïvftv 2sd525 2 SC 1446 te t 2SC1757
-
OCR Scan
2SC1199 2SC710 2SC1135 2SC982 2SD641 2SC2229 2SC1168 2sc1451 2sd1111 2SC1426 2SC1200 2SC387ATM 2SC2814 2SC380TM 2SC461

2SB595

Abstract: 2SD525 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS (TA=25) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 100 100 5 5 40 150 -50~150 V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic
Wing Shing Computer Components
Original

to3a

Abstract: 2SB536 1.2 2 0. 2 2SD524 SE2 PSW 80 80 15 100 100 80 2000 3 5 1.5 2.5 5 0.01 2SD525 PA 100 100 5 40 , , Da/R 2SD524 12* 5 1 100* 2SB595 TO-220AB® BCE 2SD525
-
OCR Scan
2SD124AH 2SD125AH 2SD126H 2SD234G 2SD235G 2SD325 to3a 2SB536 T03B 2SD331 2SD3258 2SD288

2SD2061

Abstract: 2SD880 - 207 - m % S tt Manuf. h SANYO m TOSHIBA a NEC m a HITACHI ti * ± FUJITSU a T y p e No. ¿ou i¿u vn; * * * * 2SD121 (H) 2SD122 2SD123 2SD124 fâ T MA T S U S H I T A 2SCÍ338 2SC1398 2SD1266A 2SD1264 £ MITSUBISHI E. - ROHM A ÎL ¿dUd¿0 2SD525 2SD526 2SD2081 2SD2061 2SD2061 2SD2061 0 ÍL a £ ti m m * ^ 2SD867 2SD867 * 2SD867 2SD867 2SD1485 2SD1485 * $ * * * * * * * * * * * * * * 2SD 124A (H) ocn loe 2SD 125A (H
-
OCR Scan
2SD877 2SC4008 2SD797 2SC515A 2SC782 2SD880 2Sd 123 tl 2SC782 TOSHIBA

2SB595

Abstract: transistor 2sd525 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. scs .i -100 .cn mi e -100 V ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL ww PARAMETER w VALUE UNIT V
INCHANGE Semiconductor
Original
transistor 2SB595

2sb595

Abstract: 2SD525 SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS ·Power amplifier applications ·Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc
-
Original
100v pnp to220c

2SC3421

Abstract: 2sd526 * * * * ¡I * * * * * * * * * í * ♦ * * * * * * * » * m e Type No. tt « Manuf. H # SANYO K S TOSHIBA H m NEC 0 a HITACHI g ± m FUJITSU fö T MATSUSHITA H m MITSUBISHI â¡ - A ROHM 2SC 477 fâ T 2SCÌ923 2SC46C 2SC1359 2SC2058 2SC 478 fô T 2SC1815 2SC460 2SC1318 2SC1740 2SC 481 ' M 2 2SC1398 2SC 483 S 2 2SD1264 2SC 484 / 3K 2 2SC2497A 2SC 485 Ã" 'S. 2SC2497A 2SC 488 M z 2SD525 2SC 489 S 2 2SD526 2SC 490 S S. 2SD526 2SD2023 2 SC
-
OCR Scan
2SC3419 2SC2235 2SD667A 2SC3423 2SD467 2SC4614 2SC3421 2sc2061 2SD1505 2SD1288 2SC1162 2SC1226A 2SD1381

2sc2460b

Abstract: 2SC1957 2SD1271 2SD1580 2SC 2316 - vyjy 2SD525 2SD1271A 2SD1580 2SC 2317 .â'ž - vyry 2SC2238D 2SD1772
-
OCR Scan
2SC3042 2SC945 2SC3311A 2SC2320 2SC2634 2SC4641 2sc2460b 2SC1957 25C945 25c1815 2SC3040 2SC2819 2SC2751 2SC2740 2SC3331

NEC 824A

Abstract: NEC D 809 2SD646 2SC1942 2SDT34 2SD600 2SD1133 2SD525 2SD1048 2SC3143 2SD613 2SD896 2SD896 2SD1046 2SD1046 2SC3325
-
OCR Scan
2SD795 2SD800 2SD804 2SD612K 2SD683A 2SD644 NEC 824A NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2SD792 2SD793 2SD794 2SD795A 2SD796

2SD424 TOSHIBA

Abstract: 2sd472 2SD525 POWER AMPLIFIER APPLICATIONS. FEATURES: SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm jZ Í3 .6 ± 0 .2 High Breakdown Voltage : VCEO=100V Low Collector Saturation Voltage : VCE(sat)=2.0V(Max.) · Complementary to 2SB595. Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) SYMBOL vCB0 vCE0 V eb o ic IE CHARACTERISTIC , ) sa t u r a t io n V G E (eat) v o l t a g *: W DC CURRENT G A IN hw 2SD525
-
OCR Scan
2SD492 2SD424 2SD873 MG50G2CL3 2SC1346 2SC2516A 2SD424 TOSHIBA 2sd472 2SC1818 2sd4242 2SD493 2SD494 2SD490 2SD499 2SD500

2SB5950

Abstract: 2SD5250 1.2 2 0. 2 2SD524 SE2 PSW 80 80 15 100 100 80 2000 3 5 1.5 2.5 5 0.01 2SD525 PA 100 100 5 40 , , Da/R 2SD524 12* 5 1 100* 2SB595 TO-220AB® BCE 2SD525
Interconnect Devices
Original
2SD586 2SB5950 2SB595Y 2SB616 NEC to-53 2SC940 NEC 2n5976 SDT6316 SDT6416 SML1643 SML1653 2SB747 2N1211

sn76131

Abstract: tlo72cp isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525 APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. scs .i -100 .cn mi e -100 V ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL ww PARAMETER w VALUE UNIT V
-
Original
sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510
Showing first 20 results.