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2SD424 Datasheet

Part Manufacturer Description PDF Type
2SD424 Mospec 15 A/180 V NPN Power Transistor Original
2SD424 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SD424 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SD424 N/A Basic Transistor and Cross Reference Specification Scan
2SD424 N/A Transistor Shortform Datasheet & Cross References Scan
2SD424 N/A Shortform Transistor PDF Datasheet Scan
2SD424 N/A Transistor Replacements Scan
2SD424 N/A Japanese Transistor Cross References (2S) Scan
2SD424 N/A Cross Reference Datasheet Scan
2SD424 N/A Semiconductor Master Cross Reference Guide Scan
2SD424 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD424 N/A The Transistor Manual (Japanese) 1993 Scan
2SD424 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD424 N/A Shortform Transistor Datasheet Guide Scan
2SD424 N/A The Japanese Transistor Manual 1981 Scan
2SD424 Toshiba Japanese Transistor Data Book Scan

2SD424

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: « â vyiy 2SD425 2SC 1783 vyjy 2SD734 2SD425 2SC 1784 vyiy 2SD424 2 SC 1785"' tt-yTy 2SD424 2SC 1786"' nyry 2SD424 2SC 1787 K T 2SC1571 2SC732 2SC2784 2SC1344 2SC3312 -
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2SC641 2SC1856 2SD467 2SC1214 2SC387A 2SC1047 2sd4242 2SD424 TOSHIBA 181v toshiba 2sd424 2SC2320 2SC22T4 2SC1815 2SC3311A 2SC1740 2SD895
Abstract: value of hFE , the 2SD424 is classified as follows. GLASS IF ICATION MIN. MAX. 2SD424 â'" R 4 0 8 0 2SD424 â'" 0 7 0 14 0 908 Ic-VCE(LOW VOLTAGE REGION) STATIC CHARACTERISTICS , 1.5 2.0 2.5 - IS^ffilSE VBE (V) 909 2sd424 aso lotf «Ht. DERATE LINEARLY FOR rc ABOVE 25"C 3 5 -
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ic dp 8600 toshiba 2SD424 transistor D424 TOSHIBA D424-R d424 toshiba 2sb554
Abstract: Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type 2SB554 High power dissipation High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN , =25 Inchange Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors CHARACTERISTICS , Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors PACKAGE OUTLINE TOR -
Original
2Sb554 equivalent
Abstract: SavantIC Semiconductor Product Specification 2SD424 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=180V(min) APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN , Specification 2SD424 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD424 - -
Original
Abstract: 2SD424 2SD424 NPN POWER TRANSISTOR General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M MIN - MAX 3 9 ,3 7 2 2 .2 2 8 ,5 0 1.09 1,77 3 0 ,4 11,18 5 ,7 2 17,15 12,25 2 6 ,6 7 4 ,1 9 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR 6 ,3 5 0 ,9 6 2 9 ,9 0 10,69 5 ,2 0 16,64 1 1 ,15 - 3 ,8 4 A BSO LU TE M A XIM UM RATINGS C ollector-base voltage , . max. 180 180 n / 15 5-72 2SD424 Total pow er dissipation up to T c = 2 5 "C Junction tem -
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180n15 transistor 2SD424
Abstract: 1077 2SC2182 2SC2889 2SC 1077A 2SC2889 2SC 1079 - s 2SD424 2SC 1080 2SD424 -
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2SC2085 2SD2023 2SC2926 2SC2762 2SC2285A-KA 2SC2993 TL 1084 2sc790 2sc1162 2SC3140 2SC3141 2SC1755 2SC515A 2SD314
Abstract: - 216 - s « T y p e No. 2SD492 2SD493 ^ 2SD494 ^ 2SD490 2SD499 ^ 2SD500 2SD5!? 2SD519 2SD522 2SD523 2SD a Manuf. ^ h - ^ ï h a - 7 í h ^ h « h S AN YO m JE TOSHIBA 2SD424 2 SD 718 2SD718 *ï s NE C m B HITACHI ¡L * ± a FUJITSU fÿ y MATSUSHITA H « MITSUBISHI o - ROHM A - =? 2SD1196 n~=ÿ i h - "5 2SD1148 2S D 1 1 4 8 ZS D 1 4 3 9 , 2SD424 2SD665 2SD665 2SD1580 2 SD 985 2SD1376(K) 2SB1379 2 SC 2001 2SD1133 2SD468 2S D 1 8 9 A 2SC1346 -
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2SD873 MG50G2CL3 2sd472 2SC1818 2SD335 2SD650 2SD634 2SD842 2SD683A 2SC2139 2SC2120
Abstract: 2SD424 POWER AMPLIFIER APPLICATIONS. FEATURES : SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm fS 25.0 MAX. · High Power Dissipation : Pc=150W · High Breakdown Voltage : V c e O=180V · Complementary to 2SB554. · Recommended for 100W High Fiderity Audio Frequency Amplifier Output Stage. S3 0i.o~o.o3 + 0.09 j2 i4 .0 -0 .1 5 1 - 0.08 OZÌJM&X. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC , 576 2SD424 O.Ol 0.03 0.1 0 .3 0 .5 1 COLLECTOR CURRENT 3 5 10 20 I C (A ) V be ic -
OCR Scan
Abstract: SavantIC Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SD424 ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -
Original
Abstract: JMnic Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -180 V VCEO JMnic
Original
Abstract: 2SD415 BS LF PA 120 100 0.8 1 10 1 80 40 320 5 0.2 2 1.5 0.5 0.05 2SD424 ms PA 180 180 15 150 100 90 , 2SD424 100* 10 0.05 10* 2SB560 SC-51 ECB 2SD438 150* 10 0. 05 0.05* 0.07* 0. 2* 20* 2SB559 -
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2SD125AH 2SD126H 2SD235G 2SD288 2SD289 2SD313 to3a 2SB536 T03B 2SD325 2SD3258 2SD331 2SD124AH 2SD234G
Abstract: Inchange Semiconductor Product Specification 2SB554 Silicon PNP Power Transistors DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol TOR UC Absolute maximum ratings(Ta=) SYMBOL PARAMETER OND IC VALUE UNIT -180 V -180 V -5 V Collector current -
Original
Abstract: 2SB554 150 7 f + + VU AÃ*3 f-Ã"W S^Sttffl » S . u u 9 à jflflcas-jt í v^o : PC^IÃÃW â'¢ fcittff-i-o : V0JCO*â'"¿BQV 2SD424 SV* VK&tl-fu â'¢ 100W-à ff AS« (Ta-25'c.l 100 JEL'EC rn-20 4MA/tO> fclA J TCâ'"2 â'¢ TBâ'"3 400 MAX. 3. * 2. xifl 3U2±a2 ♦â aoa ulf> a h £ « » £ * * « J* * » « * * VI ^ ^ L f fr t Ã" ICBO -Ã00 fi A x S , à L r » m ff lRB0 VfJi* »V. Jc = o - â'" â'¢100 «A V -
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FCLA 1C-10A
Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB554 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25 ·Complement to Type 2SD424 APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 100W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO INCHANGE Semiconductor
Original
Abstract: 2SB554 POWER AMPLIFIER APPLICATIONS. FEATURES: High Power Dissipation : · High Breakdown Voltage : · Complementary to 2SD424. SILICON PNP TRIPLE DIFFUSED MESA TYPE Pc = 150W V q e o = -180V · Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta«25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipa tion (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL -
OCR Scan
Abstract: 2SB554 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES : Pc = 150W â'¢ High Power Dissipation â'¢ High Breakdown Voltage : VcEO = -180V â  Complementary to^'2SD424. â'¢ Recommended for 100W High-Fiderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO -180 V Collector-Emitter Voltage VCF0 -180 V Emitter-Base Voltage Vp/iO -5 V Collector Current ic -15 A Emitter Current IE 15 A Collector Power -
OCR Scan
100-C 2SB554 TOSHIBA AC73 TE30
Abstract: -3 O (18) TO-3 CAN PACKAGE SERIES TO-3 n Application fc Type No. NPN Power Amp. DC-DC Converter Series Reg. 2SD81Î 2SC521A 2SC520A 2SC519A 2SC1617 2SD640 2SD867 2N3713 2N3715 2N3714 2N3716 2N6249 2N6250 2N6251 2SD878 2N3055 2SD424 2SD552 2SD641 2SC1195 I j ; ; ! ! ! ,[ ; j ; ! I í ¡ ; j i ! ¡ [ ! » 2SB554 2SB552 15 2N3789 2N3791 2N3790 2N3792 10 2SA658A 2SA657A 2SA656A 7 2SA739 PNP (A) 1.5 3 6 v CE0 PC hFE V CH (V) 30-150 20 ~ 300 1 0 -4 0 3 0 -3 0 0 3 0 -3 0 0 30 -3 0 0 3 0 -1 5 0 25 -
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Abstract: Tb TOSHIBA {D IS CRETE/O PTO} 90972SO TOSHIBA -
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A733A 0DD733Q
Abstract: 2SC4288A 2SC4439 2SC4448 2SC4479 2SD424 2SD525 2SD526 2SD548 2SD552 2SD553 2SD633 2SD634 2SD635 2SD640 -
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MP3009 MP4003 MP4004 MP4501 S1854 S2055 s1854 a mp4002 mp4001 2SA473 2SB553 2SB595 2SB596 2SB673 2SA940
Abstract: -1A 10* 250 2SD553 40-140 -5 -2A 6* 450 2SD424 40-140 -5 -2A 6* 330 2SD425 -
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2SB506A 2SB511 2SB522 2SB580 2SD555 2SB528 2SB540 2Sd358 2SB525 2SB526 2SB502 2SB502A 2SB503 2SB503A 2SB504 2SB504A
Abstract: 2SD381 2SD382 2SD400 2SD401A 2SD414 2SD415 2SD424 2SD438 2SD439 2SD467 2SD468 2SD471 2SD476AK , ECG324 ECG325 ECG326 ECG327 DBY58 ECG328 ECG329 ECG330 ECG331 ECG332 ECG333 2SD424 2SB554 -
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sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510
Abstract: 2SC998 2SC1169 2SD820 2SD821 - - 2SD424 2SD424 2SC2104 2SC2106 2SC2183 2SC2183 2SC1627 2SC1627 -
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2SA1015 MG15G1AL2 S-AU15 b1375 2sk270a 2SK150A 2SA1051b MG50G2CL1 2N4340 2N4340S 2N4391 2N4392 2N4393 2N4399
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