2SD313 - Datasheet Archive

 

NPN 2SD313 3A 30W Technical Data .designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current

 

SILICON PLASTIC POWER TRANSISTOR NPN 2SD313 2SD313 3A 30W Technical Data .designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 40 @ IC=2A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 60 Vdc Collector ­ Base Voltage Emitter Base Voltage Collector Current ­ Continuos V CB V EB IC 60 5 3 Vdc Vdc Adc Base Current IB 0.3 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage junction Temperature Range PD 30 0.24 -55 to +150 Watts W/°C °C Max. Unit 4.16 °C/W Tj,Tstg THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case Symbol R thjc °C unless otherwise noted ] ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic Symbol * OFF CHARACTERISTICS : Collector­Emitter Breakdown [ Ic =50 mAdc, IB = 0 ] Collector Cutoff Current [ VCB =20 Vdc, IB = 0 ] Collector­Base Breakdown [ Ic =1mAdc, IE = 0 ] Emitter Cutoff Current [VEB=5Vdc, IC=0] VCEO(sus) Voltage Min Typ 60 100 BVCBO Unit Vdc ICB0 Voltage Max 60 µAdc Vdc IEBO 100 µAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.1 Adc , VCE = 2.0 Vdc ] [ Ic =2 Adc , VCE =2.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 2Adc , IB = 0.2Adc ) VCE(sat) 1 Vdc Emitter­Base Saturation [ Ic =1Adc, VCE =2V ] VBE(ON) 1 Vdc 40 40 320 Voltage DYNAMIC CHARACTERISTICS : Current Gain ­ Bandwidth Product [Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ] · hFE fT (1) Pulse Test : Pulse Width