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Part : 2SD313E Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,600 Best Price : - Price Each : -
Part : DCA3101E22-22S(D313) Supplier : DDK Connectors Manufacturer : Electroshield Stock : 80 Best Price : $27.07 Price Each : $42.62
Part : DCA3106F14S-2S(D313) Supplier : DDK Connectors Manufacturer : Electroshield Stock : 111 Best Price : $18.37 Price Each : $24.54
Part : DCA3106F22-22S(D313) Supplier : DDK Connectors Manufacturer : Electroshield Stock : 202 Best Price : $23.23 Price Each : $35.69
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2SD313 Datasheet

Part Manufacturer Description PDF Type
2SD313 Anqiu Huichuan Electronic Transistor for Color TV Original
2SD313 Transys Electronics Plastic-Encapsulate Transistors Original
2SD313 USHA NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 Original
2SD313 Various Russian Datasheets Transistor Original
2SD313 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original
2SD313 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan
2SD313 Micro Electronics Semiconductor Device Data Book Scan
2SD313 Mospec POWER TRANSISTORS(3A,60V,30W) Scan
2SD313 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
2SD313 N/A Transistor Shortform Datasheet & Cross References Scan
2SD313 N/A Shortform Transistor PDF Datasheet Scan
2SD313 N/A Japanese Transistor Cross References (2S) Scan
2SD313 N/A Cross Reference Datasheet Scan
2SD313 N/A Semiconductor Master Cross Reference Guide Scan
2SD313 N/A The Transistor Manual (Japanese) 1993 Scan
2SD313 N/A Transistor Substitution Data Book 1993 Scan
2SD313 N/A Shortform Transistor Datasheet Guide Scan
2SD313 N/A The Japanese Transistor Manual 1981 Scan
2SD313 N/A Scan
2SD313 N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

2SD313

Catalog Datasheet MFG & Type PDF Document Tags

toshiba 2sd425

Abstract: nec 2sd287 V - - 2SD313 2SD313 2SD880 2SD880 2SD867 2SD880 ¿0UÖÖU 2SD1135 2SD1135 2SD1135 2SD1135 , · a s = * fé T fé T S± iS fé = T ;¥ 2SD313 ^ h 2SD867 2SC792 2SD820 2SD820 2SD867 2SD818 2SD526 , 2S D 321 2S D 322 2 S D 323 2SD 324 2SD 325 ^ fé fé fé fé T T T T m 2SD313 2SD313 2SD313 2SD313
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OCR Scan
2SD287 2SD287C 2SD425 2SD2023 2SD427 2SD1391 toshiba 2sd425 nec 2sd287 2sd 311 2S0880 2SD288 2SD289

2S0880

Abstract: 2SD427 ¡ - A ROHM 2S0 330 ' = m 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD 33! â" E. m 2SD313 2SC79Û(LB , 2S0 340 V-â'" 2SD425 2SD 341 - B ÃZ 2SD867 2SD 342 / Vâ'"â'" 2SD313 2SD880 2SD568 2SD1135 2SD2023 à OU 040 j V â'"â'" 2SD313 2SD88Q 9 , 2SD313 2SD880 2SD568 2SD1135 2SD1266 2SD2023
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OCR Scan
2SC1815 2SC2320 2SD600K 2SC1398 2SC2204 2Sd428 SD 338 2sc1624 2SD390 2SD428 2SD2064 2SD400 2SC2120 2SC1213A

2SD 388 A

Abstract: 2Sd427 - 213 - m £ Type No. 2SD365A 2SD366 2SD366A 2SD367 2SD368 2SD369 ^ 2SD370 2SD371 2SD372 2SD373 2SD373A 2SD374 2SD375 2SD376 ^ 2SD377 2SD378 2SD379 ^ 2SD 380 2SD 381 ^ / fé fé fé H tt Manuf. s = SANYO 2SD313 2SD313 2SD313 æ M TOSHIBA 2SD526 2SD880 2SD526 2 a NEC 2SÜ288 m 0 ÍL HITACHI 2SÜ1135 2SD1135 m ± il FUJITSU tö T MATSUSHITA 2SD1266A 2SD1266 2SDÎ266A h , ¥ 2SD386 2SC2073 2SC2073 2SC2073 2SC2073 2SD427 2SD313 2SD313 2SD313 2SC2274 2SD526 2SD526 2SD526
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OCR Scan
2SD650 2SD2061 2SD 388 A 2sd1138 2sc2139 2SD382 2SC4007 2SD467 2SD1884 2SD716 2SD380 2SD319

Sanyo D313

Abstract: transistor D313 stage of 2SB507 /2SD313. High input impedance of 100 kohm by bootstrap circiut. This input impedance can , .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care ,  ) 0.1 (-) 5 (")1 unit mA mA mA V 320* /Vcb=(-)10V,\ 2SB507,508 'f=lMHz I 2SD313, 314 Gain , /2SD313,314 are classified by 1A hFE as follows: VcE(sat) IC=(-)2A,IB=(-)0.2A VBE IC=(-)1A,Vce=(-)2V 8
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OCR Scan
Sanyo D313 transistor D313 TRANSISTOR B507 D314 transistor d313 transistor SD313 508/2SD313 B1181 B1252

2SD313

Abstract: transistor 2sd313 UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. 1 TO-220 *Pb-free plating product number:2SD313L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD313-x-TA3-T 2SD313L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube 2SD313L-x-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2
Unisonic Technologies
Original
transistor 2sd313 2sd313 equivalent 2SD313 F 2sd313 applications 2SD313L-x-TA3-T 2SD313- 2SD313L- QW-R203-001
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd , QW-R203-001,D 2SD313 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Unisonic Technologies
Original
2SD313G-

2SD313

Abstract: 2SB507 SAN VO TEN FOUR LTD. 1535 Alps Road WAYNE, NEW JERSEY 07470 fWU 5v>«?7 TWX 7'?0 â'¢">PS.O?03 SANYO SEMICONDUCTOR 2SB507.508 2SD313,314 2SB507,508_ Planar Type Silicon Transistor 2SD31 3,314 For AF Power Amplifier Use .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25V? AF power amplifier. .2SB507 and 2SB508, or 2SD313 and , 8 MHz Output Capacitance cob /VCB= (-) 10V,\ 2SB507 , 508 (130) pF ,f=lMHz > 2SD313,314 65 pF
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OCR Scan
to220aa 2sb507 sanyo TRANSISTOR 2SB507 280314 alps IC 2sb507 transistor
Abstract: Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T www.unisonic.com.tw , UNISO TE NIC CHNO G SCO LTD LO IE ., 2SD313 NPN SILICON TRANSISTOR N PN EPI T AX I AL PLAN AR T RAN SI ST OR Ì DESCRI PT I ON The UTC 2SD313 is designed for use in general purpose , C E B C E Packing Tube Tube 1 of 4 QW-R203-001,E 2SD313 Ì NPN SILICON , 160-320 2 of 4 QW-R203-001,E 2SD313 Ì NPN SILICON TRANSISTOR h FE Saturation Voltage Unisonic Technologies
Original

2SD313

Abstract: transistor 2sd313 UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,C 2SD313 ABSOLUTE
Unisonic Technologies
Original

TRANSISTOR B507

Abstract: TRANSISTOR d313 switching-on time. Darlington output stage of 2SB507 /2SD313. High input impedance of 100 kohm by bootstrap , ,2SB508 and 2SD313,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care , Capacitance cob /Vç3= (-) 10V,\ 2SB507,508 'f=lMHz 1 2SD313, 314 (130) 65 pF pF C-E Saturation Voltage VcE , *:2SB507,508/2SD313,314 are classified by 1A hFE as follows: 40 C 80 60 D 120 100 E 200 160 F 320 Case
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OCR Scan
D313 amplifier D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor T-33- 0DGB752

2SD313

Abstract: 2SB507 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220 1. BASE FEATURES Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value , 100-200 160-320 Typical Characteristics Typical Characteristics 2SD313 Jiangsu
Jiangsu Changjiang Electronics Technology
Original
Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T 2SD313L-x-TQ2-T 2SD313G-x-TQ2-T 2SD313L-x-TQ2-R 2SD313G-x-TQ2-R Note: Pin assignment: E: Emitter B: Base C: Collector  Package TO-220 TO Unisonic Technologies
Original

2sd313

Abstract: UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD313L-x-TA3-T 2SD313G-x-TA3-T 2SD313L-x-TF3-T 2SD313G-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 B C E B C E Packing Tube Tube www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-001,E 2SD313 ABSOLUTE
Unisonic Technologies
Original

2sd313 equivalent

Abstract: 2SD313 Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION , to case Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power , Specification 2SD313 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions
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Original

2SD454

Abstract: 2SC901 2SC2073 9 c m i
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OCR Scan
2SC1449 2SD473 2SD647 2SC901 2SC1333 2SC1667 2SD454 2SC2516 NEC 2SD400 E 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633

2SD313

Abstract: 2sd313 equivalent SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION , SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors CHARACTERISTICS , ) 3 2SD313 -
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Original
416W

2SD313

Abstract: 2SB507 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN , ://www.weitron.com.tw 1/4 06-Feb-07 2SD313 ELECTRICAL CHARACTERISTICS (TA=25°C Unless otherwise noted , ://www.weitron.com.tw 2/4 06-Feb-07 2SD313 Sa tu ration Vol ta ge, VCE (S AT) (mV) 1000 h FE 100 , http://www.weitron.com.tw 3/4 06-Feb-07 2SD313 TO-220 Outline Dimensions D C1 F
Weitron
Original
2SD313 E

2SD313

Abstract: 2SB507 Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507 MAXIMUM RATINGS NPN 2SD313 3 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS Characteristic Symbol 2SD313 Unit Collector-Emitter Voltage VCEO , J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 2SD313 NPN ELECTRICAL , 2.0% * hFE(2) Classification :_ 40 C 80 60 D 120 100 E 200 160 F 320 2SD313 NPN le - Vce DC
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OCR Scan

2SD1148

Abstract: 2SC3296 - 106 - S! S Type No. tt « Manuf. H m SANYO K 'S. TOSHIBA 0 1 NEC 0 ÃL HITACHI « ± a FUJITSU fô T MATSUSHITA H « MITSUBISHI â¡ â'" A ROHM 2SC 1102 s m 2SC515A 2SC2611 2SC 1103 s s 2SC1447 2SC2258 2SC3272 2SC 1103 A a m 2SC3269 2SC 1104 s m 2SC3296 2 SC 1105 s « 2SC1755 2SC2242 2SC 1106 0 w 2SC1576 2SC 1107 yy
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OCR Scan
2SD895 2SC519A 2SD1148 2SD655 2SC2926 2SC3217 2SC1923 2SD718 2SC3102

2SB 2045

Abstract: B507D T'33')? 2012 PNP/ npn Triple D iffu sed P lan a r S ilic o n T ra n sisto rs 2SD313, \ . , ,2SB508 and 2SD313,2SD314 are complementary pairs respectively. .These are designed for the output stage of 15W to 25W AF power amplifier. .2SB507 and 2SB508, or 2SD313 and 2SD314, differ from their care , ( - ) IOVa 2SB507,508 'f=lMHz > 2SD313,314 65 (-) 0.4 (-) 1.0 V c e (sat) IC=(-)2A,IB=(-)0.2A (-)1.5 , /2SD313,314 are classified by 1A hpg as follows: 40 C 80 60 D 120 100 E 200 160 F 320 Case O u tlin e
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OCR Scan
2SB 2045 B507D b 507 201OA T03PB IS-20MA IS-313 IS-313A
Showing first 20 results.