2SD2589 2SB1659 FM-25 - Datasheet Archive

 

Darlington Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) sAbsolute maximum ratings (Ta=25°C)

 

2SD2589 2SD2589 Darlington Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659 2SB1659) sAbsolute maximum ratings (Ta=25°C) Application : Audio, Series Regulator and General Purpose sElectrical Characteristics External Dimensions FM-25 FM-25(TO220) (Ta=25°C) Unit 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=­0.5A 60typ MHz ­55 to +150 °C COB VCB=10V, f=1MHz VCEO 110 VEBO IC Tstg 10.2±0.2 V 12.0min V pF 55typ 2.0±0.1 ø3.75±0.2 a b 1.35 0.65 +0.2 -0.1 hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) 2.5 sTypical Switching Characteristics (Common Emitter) 2.5 1.4 B C E VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) 30 6 5 10 ­5 5 ­5 0.8typ 6.2typ Weight : Approx 2.6g a. Type No. b. Lot No. tf (µs) 1.1typ I C ­ V CE Characteristics (Typical) 4.8±0.2 3.0±0.2 VCB=110V 110 16.0±0.7 ICBO VCBO 8.8±0.2 2SD2589 2SD2589 Symbol Unit 4.0max Conditions 2SD2589 2SD2589 Symbol I C ­ V BE Temperature Characteristics (Typical) A V CE ( sa t ) ­ I B Characteristics (Typical) I B =0.1mA 0 0 2 4 I C =3A 0 6 0.1 0.5 1 5 10 50 h FE ­ I C Characteristics (Typical) (VCE=4V) 40000 10000 5000 1000 500 1 5 6 Collector Current I C (A) 10000 12 5000 Transient Thermal Resistance DC C urrent G ain h FE Typ 5°C 25 °C ­3 0°C 1000 500 100 0.02 0.1 0.5 ) Temp Temp ) mp) e Te 2 2.5 1 56 5 1 0.5 0.4 1 10 Collector Current I C (A) f T ­ I E Characteristics (Typical) 100 1000 2000 Time t(ms) P c ­ T a Derating Safe Operating Area (Single Pulse) (VCE=12V) 50 80 60 at si nk Emitter Current I E (A) ­6 he ­1 30 ite ­0.1 fin 0 ­0.02 In 20 ith 40 40 W Maxim um Power Dissip ation P C (W) Typ Cut- off F req uency f T (MH Z ) DC Cur r ent Gai n h F E 1 j-a ­ t Characteristics h FE ­ I C Temperature Characteristics (Typical) 40000 0.5 0 Base-Emittor Voltage V B E (V) (VCE=4V) 0.1 0 100 Base Current I B (mA) Collector-Emitter Voltage V C E (V) 200 0.02 2 (Case 1 ­30°C 2 I C =5A 4 (Case 0.2mA 2 (Cas 4 25°C Collector Current I C (A) 0.3 mA (VCE=4V) 6 125°C 0. 4m A Collector Current I C (A) mA 3 j - a (°C /W) 5 0. Collector-Emitter Saturation Voltage V C E (s at) (V) 1m 5mA 6 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(°C) 161