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2SD2459 SJC00264BED - Datasheet Archive
2SD2459 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2
Transistors 2SD2459 2SD2459 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 0.2 1 0.4±0.08 3° 4.0+0.25 0.20 · High collector-emitter voltage (Base open) VCEO · Low collector-emitter saturation voltage VCE(sat) · Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.5±0.1 Features 0.4±0.04 2.6±0.1 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 VCEO 150 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation * PC 1 W 45° V Collector-emitter voltage (Base open) 0.4 max. 3° Junction temperature Tj 150 Tstg -55 to +150 1: Base 2: Collector 3: Emitter MiniP3-F1 Package Marking Symbol: 2E °C Storage temperature 3.0±0.15 °C cm2 Note) *: Printed circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 150 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 150 V Emitter-base voltage (Collector open) VEBO IC = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 75 V, IE = 0 V 0.1 µA 340 hFE1 *2 VCE = 2 V, IC = 100 mA 120 hFE2 *1 VCE = 2 V, IC = 500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 25 mA 0.11 0.30 V Base-emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 25 mA 0.8 1.2 V VCB = 10 V, IE = -50 mA, f = 200 MHz 90 VCB = 10 V, IE = 0, f = 1 MHz 12 Forward current transfer ratio Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank R S hFE1 120 to 240 170 to 340 Publication date: December 2002 SJC00264BED SJC00264BED 1 2SD2459 2SD2459 Collector power dissipation PC (W) IC VCE 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Ta = 25°C 1.0 Collector current IC (A) 1.0 0.8 0.6 0.4 IB = 8 mA 7 mA 6 mA 5 mA 0.8 0.6 4 mA 3 mA 0.4 2 mA 0.2 0.2 1 mA 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) 0 2 4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 10 25°C Ta = -25°C 100°C 0.1 0.01 0.01 0.1 1 10 300 Ta = 100°C 200 25°C -25°C 100 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 25°C f = 1 MHz IE = 0 40 30 20 10 0 1 10 0.01 100 Collector-base voltage VCB (V) SJC00264BED SJC00264BED 0.1 1 10 Collector current IC (A) 200 400 0 0.01 Ta = 100°C 25°C -25°C 0.001 0.01 VCE = 2 V Cob VCB 50 12 0.1 fT I E 1 Collector current IC (A) Collector current IC (A) 60 10 IC / IB = 20 1 hFE IC 500 IC / IB = 20 1 8 10 Collector-emitter voltage VCE (V) VBE(sat) IC 100 6 Transition frequency fT (MHz) 0 2 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.2 10 Ta = 25°C VCB = 10 V 160 120 80 40 0 -1 -10 Emitter current IE (mA) -100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: · Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. · Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL