2SB1548 2SB1548A 2SD2374 2SD2374A

2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit: mm s

Power Transistors 2SB1548 2SB1548, 2SB1548A 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 2SD2374 and 2SD2374A 2SD2374A Unit: mm s Features s Absolute Maximum Ratings Parameter (TC=25°C) Symbol Collector to 2SB1548 2SB1548 base voltage 2SB1548A 2SB1548A Collector to 2SB1548 2SB1548 Ratings 60 VCBO 80 60 VCEO emitter voltage 2SB1548A 2SB1548A 80 Unit V V VEBO 5 Peak collector current ICP 5 IC 3 2.9±0.2 3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 A Collector current 4.6±0.2 9.9±0.3 3.0±0.5 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 15.0±0.5 q 13.7±0.2 4.2±0.2 q 0.55±0.15 A Emitter to base voltage Collector power TC=25°C dissipation 1 25 PC Ta=25°C Junction temperature Tstg 150 °C Symbol 2SB1548 2SB1548 current 2SB1548A 2SB1548A Collector cutoff 2SB1548 2SB1548 current 2SB1548A 2SB1548A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SB1548 2SB1548 voltage 2SB1548A 2SB1548A 1:Base 2:Collector 3:Emitter TO220D Full Pack Package (TC=25°C) Parameter Collector cutoff Conditions min typ 200 VCE = 80V, VBE = 0 200 VCE = 30V, IB = 0 300 VCE = 60V, IB = 0 300 VEB = 5V, IC = 0 1 IC = 30mA, IB = 0 VCE = 4V, IC = 1A 70 µA µA mA 10 hFE2 VCE = 4V, IC = 3A VBE Collector to emitter saturation voltage VCE(sat) fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf 250 IC = 3A, IB = 0.375A Transition frequency V 80 VCE = 4V, IC = 3A FE1 Unit 60 VCEO Base to emitter voltage *h max VCE = 60V, VBE = 0 hFE1* Forward current transfer ratio 2.54±0.3 3 5.08±0.5 °C 55 to +150 s Electrical Characteristics 2 W 2 Tj Storage temperature V 1.8 1.2 V V MHz 0.5 IC = 1A, IB1 = 0.1A, IB2 = 0.1A 30 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. 1 Power Transistors 2SB1548 2SB1548, 2SB1548A 2SB1548A PC - Ta IC - VCE 8 7 28 (1) 24 20 16 12 8 IB=100mA 4 80mA 60mA 3 40mA 30mA 2 20mA 16mA 12mA 1 8mA (2) 20 40 60 80 100 120 140 160 2 2 4 6 8 10 12 0 fT - IC VCE=4V TC=25°C 3000 1000 0.1 0.03 0.01 0.003 1 3 300 100 30 10 3 Collector current IC (A) 1 3 Area of safe operation (ASO) ICP t=1ms 10ms DC 0.3 0.1 0.03 3 10 30 100 300 1000 Collector to emitter voltage VCE 10 3 1 (V) 1 3 Collector current IC (A) Rth(t) - t Thermal resistance Rth(t) (°C/W) Non repetitive pulse TC=25°C 1 30 0.1 0.01 0.03 0.1 0.3 10 103 IC 100 Collector current IC (A) 100 30 VCE=10V f=10MHz TC=25°C 300 0.3 1 0.01 0.03 0.1 0.3 10 (1) Without heat sink (2) With a 100 × 80 × t2mm Al heat sink 102 (1) (2) 10 1 101 102 104 1.2 1000 Transition frequency fT (MHz) 1 Forward current transfer ratio hFE IC/IB=10 TC=25°C 0.001 0.01 0.03 0.1 0.3 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) hFE - IC 0.3 Collector current IC (A) 3 1 10000 3 0.01 1 4 Collector to emitter voltage VCE (V) VCE(sat) - IC 10 3 5 0 0 Ambient temperature Ta (°C) 10 6 4mA 0 0 2 Collector current IC (A) 5 32 4 VCE=4V TC=25°C TC=25°C (1) TC=Ta (2) Without heat sink (PC=2W) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC - VBE 6 Collector current IC (A) Collector power dissipation PC (W) 40 103 102 101 1 Time t (s) 10 102 103 104 10