2SB1537 2SD2357 - Datasheet Archive

2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue

Transistor 2SB1537 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.00.20 +0.1 45° 1.00.2 q Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 q ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. q 1.5±0.1 4.5±0.1 1.6±0.2 s Features 0.4±0.04 3.0±0.15 s Absolute Maximum Ratings (Ta=25°C) 3 Parameter Ratings VCBO 10 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.2 A Collector current IC Collector power dissipation PC* Junction temperature Tj Storage temperature Tstg 1 Unit Collector to base voltage 1 °C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion s Electrical Characteristics ce Collector to base voltage M ai nt en an Collector to emitter voltage Emitter to base voltage 1L or more, and the board nt in is /D Collector cutoff current Marking symbol : (Ta=25°C) co Parameter EIAJ:SC62 Mini Power Type Package °C 55 ~ +150 1:Base 2:Collector 3:Emitter W 150 marking A 1 Symbol Conditions min typ max Unit 1 µA ICBO VCB = 7V, IE = 0 VCBO IC = 10µA, IE = 0 10 V VCEO IC = 1mA, IB = 0 10 V VEBO IE = 10µA, IC = 0 5 V 100mA* Forward current transfer ratio hFE VCE = 2V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA* Transition frequency fT VCB = 5V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 5V, IE = 0, f = 1MHz 45 Pl ea * Symbol 2 200 800 0.15 V MHz pF * Pulse measurement 1 Transistor 2SB1537 2SB1537 PC - Ta IC - VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 1.0 1.4mA 1.0mA 0.6 0.6 0.6mA 0.6 0.2mA 0.2 60 80 100 120 140 160 Forward current transfer ratio hFE 25°C 25°C 0.1 0.03 0.01 0.003 1 3 10 Collector current IC (A) IE=0 f=1MHz Ta=25°C 100 80 60 40 20 0 1 3 10 10 12 0 0.4 0.8 1.2 30 480 500 Ta=75°C 400 25°C 300 25°C 200 100 0 0.01 0.03 0.1 0.3 100 Collector to base voltage VCB (V) 1.6 2.0 2.4 Base to emitter voltage VBE (V) fT - I E VCB=5V Ta=25°C f=200MHz 400 320 240 160 80 0 1 3 Collector current IC (A) Cob - VCB 120 8 VCE=2V 1 0.001 0.01 0.03 0.1 0.3 6 600 3 Ta=75°C 4 hFE - IC IC/IB=100 0.3 2 Collector to emitter voltage VCE (V) VCE(sat) - IC 10 0 0 Transition frequency fT (MHz) 40 25°C 0.8 0 20 Ta=75°C 0.4 0.4mA 0.2 0.2 Ambient temperature Ta (°C) Collector to emitter saturation voltage VCE(sat) (V) 0.8mA 0.4 0.4 0 Collector output capacitance Cob (pF) 1.2mA 25°C 1.0 IB=1.6mA 0.8 0.8 VCE=2V Ta=25°C 0 2 1.2 Collector current IC (A) 1.2 IC - VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 10 1 3 10 30 100 300 Emitter current IE (mA) 1000 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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