2SD2301 - Datasheet Archive

 

Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM · High breakdown voltage VCBO = 1500 V

 

2SD2301 2SD2301 Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM · High breakdown voltage VCBO = 1500 V Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit -­ Collector to base voltage VCBO 1500 V -­ Collector to emitter voltage VCEO 800 1 2 3 V -­ Emitter to base voltage VEBO 6 V -­ Collector current IC 6 1. Base 2. Collector 3. Emitter A -­ Collector peak current iC(peak) 7 A -­ Collector surge current iC(surge) 16 A -­ Collector power dissipation PC*1 50 W -­ Junction temperature Tj 150 °C -­ Storage temperature Tstg ­55 to °C +150 -­ Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition - Collector to emitter breakdown voltage V(BR)CEO 800 - - V IC = 10 mA, RBE = - Emitter to base breakdown voltage V(BR)EBO 6 - - V IE = 10 mA, IC = 0 - Collector cutoff current ICES - - 500 µA VCE = 1500 V, RBE = 0 - DC current transfer ratio hFE - - 30 VCE = 5 V, IC = 1 A - Collector to emitter saturation voltage VCE(sat) - - 5 V IC = 5 A, IB = 1 A - Base to emitter saturation voltage VBE(sat) - - 1.5 V IC = 5 A, IB = 1 A - Fall time tf - - 0.8 µs ICP = 5 A, IB1 = 1 A, IB2 ­2 A -