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2SD2134 Datasheet

Part Manufacturer Description PDF Type
2SD2134 Panasonic Silicon NPN epitaxial planar type Original
2SD2134 Panasonic Power Device - Power Transistors - For Audio Original
2SD2134 N/A The Transistor Manual (Japanese) 1993 Scan
2SD2134 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD2134 N/A Japanese Transistor Cross References (2S) Scan
2SD2134 Panasonic Power Transistors Scan
2SD21340RA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 150VCEO 1A MT-3 Original
2SD2134Q Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original
2SD2134R Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original
2SD2134R Panasonic Silicon NPN Planar Transistor Scan

2SD2134

Catalog Datasheet MFG & Type PDF Document Tags

NEC 2SD1564

Abstract: 2SC3296 2SC3666 2SD1993A n . 2SD2409 2SD1855 2SC3981 2SD2134 2SD2133 2SD2134
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OCR Scan
2SD1993 2SD1995 2SD1190 2SD1558 2SD837 2SD1276 NEC 2SD1564 2SC3296 2sd2394 2012 NEC 2SD1986 2SD1987 2SD1988 2SD1989 2SD1990 2SD1991

953a

Abstract: 2SB1414 Power Transistors 2SD2134 2SD2134 Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SB1414 â  Features â'¢ Very good linearity of DC current gain '(Iife) â'¢ High transition frequency (fT) â'¢ Optimum for the driver of 60-100W in complementary pair with 2SB1414 â  Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo 180 , 2SD2134 Pc-Ta Tc=Ta V V N N
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OCR Scan
953a 200MH

953a

Abstract: 2SB1414 Power Transistors 2SD2134 2SD2134 Silicon NPN Epitaxial Planar Type AF Driver, High Power Amplifier Complementary Pair with 2SB1414 â  Features â'¢ Very good linearity of DC current gain (hFE) â'¢ High transition frequency (fT) â'¢ Optimum for the driver of 60-100W in complementary pair with 2SB1414 â  Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo 180 , Copyrighted By Its Respective Manufacturer Power Transistors 2SD2134 Pc-Ta S 16 Ì 08 1 Tc=Ti
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OCR Scan

2SB1414

Abstract: 2SD2134 Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent collector current IC characteristics of forward current transfer ratio hFE · High transition frequency fT · A complementary pair with 2SB1414, is optimum for the , 2003 SJD00245BED 1 2SD2134 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 10.8±0.2 Unit: mm 7.5±0.2 3.8±0.2 4.5±0.2 Features · Excellent collector current IC characteristics of forward current transfer ratio hFE · High transition frequency fT · A complementary pair with , /95/EC). 2SD2134 PC Ta Collector-emitter saturation voltage VCE(sat) (V) 2.0 Without heat sink Panasonic
Original

2SB1414

Abstract: 2SD2134 This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin , the RoHS Directive (EU 2002/95/EC). 2SD2134 VCE(sat) IC Collector-emitter saturation voltage VCE
Panasonic
Original
Abstract: Power Transistors 2SD2134 Silicon NPN epitaxial planar type Unit: mm For low-frequency driver/high power amplification 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Optimum for the driver of 60 W to 100 W output amplifier on , to 155 130 to 220 Publication date: May 2002 SJD00245AED 1 2SD2134 VCE(sat) IC Panasonic
Original

2SD2172

Abstract: 2SD2165 - 282 - Sä g tt 8 M & (Ta=25'C, *EPIiTc=25T!) 1 S à S tt (Ta=25tJ) [*EPIitypffi] (V) Vceo (V) !c!dc) (A) Pc (») Pc* (») T (max) (wa) VCB (V) (min) (max) Vce (V) Ic/Ie (A) ik (max) (V) /^'DÃ\oat/ (V) Ic (A) Ib (A) 2SD2133 KT LF PA 30 25 1 1.5 0.1 20 85 340 10 0.5 0.4 1.2 0. 5 0.05 2SD2134 KT LP PA/D 150 150 1 1.5 65 330 10 0.15 2 2 0.5 , -3) ECB 2SD2133 200* 10 0. 05 20* (MT-3) ECB 2SD2134 (MT-3) ECB, Da/E 2SD2135
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OCR Scan
2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2139 2SD2172 2SD2165

4712 4723

Abstract: 2SC4933 - 197 - S £ Type Ko. tt « Ma nui'. H $ SANYO X S TOSHIBA 0 « SEC 0 iL HITACHI « ± il FUJITSU fô T MATSUSHITA H m MITSUBISHI â¡ â'" A ROHM 2SC 4704,/ S iL 2SC3956 2SC3963 2SC2688 2SD2134 2SC 4705 H # 2SC3617 2SC 4706 X 1tviry 2SC3451 2SD1314 2SC 4707 X s 2SC4485 2SD789 2SD2074 2SC3244 2SC 4708 y 0 iL 2SC4563 2SC3611 2SC 4712 S ÃL 2SD2342 2SC 4713 â¡ â'"Ã' 2SC3Ì22 2SC2620 2SC427Û zòi/jaai 2SC 4714 fò T 2SC4075 2SC2242
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OCR Scan
2SC4566 2SC2705 2SC4933 4712 4723 4735 2SC4717 2SC4718 2SC2458 2SC2995 2SC2603 2SC4448

c20e

Abstract: 2SB1414 Power Transistors 2SB1414 2SB1414 Silicon PNP Epitaxial Planar Type AF Drivers, High Power Amplifier Complementary Pair with 2SD2134 â  Features â'¢ Very good linearity of DC current gain (hFE) â'¢ High transition frequency (fT) â'¢ Automatic mounting by radial taping is possible. â  Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -180 V Collector-emitter voltage Vceo -180 V Emitter-base voltage Vebo -5 V Peak collector current Icp -1.5 A Collector current Ic
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OCR Scan
c20e VOE--10V
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2134 Silicon NPN epitaxial planar type For low-frequency driver , high power amplification Complementary to 2SB1414 Unit: mm 4.5±0.2 0.65±0.1 90˚ 0.85±0.1 1.0±0.1 0.8 C 0.7±0.1 16.0±1.0 1.15±0.2 â  Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage , This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2134 VCE(sat)  IC Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 Features · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90° 0.8 C Panasonic
Original

2SB1424

Abstract: 2sd22 » 5à « ft 200 -10 -0.05 20» (MT-3) ECB 2SB1413 200* -10 0.05 50 2SD2134 (MT
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OCR Scan
2SB1416 2SB1417 2SB1417A 2SB1418 2SB1418A 2SB1419 2SB1424 2sd22 ZSB1415

2SB1414

Abstract: 2SD2134 Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 90° 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 · Excellent current IC characteristics of forward current transfer ratio hFE vs. collector · High transition frequency fT · Allowing automatic insertion with radial taping 16.0±1.0 Features 10.8±0.2 7.5±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
Panasonic
Original

2SB1414

Abstract: 2SD2134 This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 3.8±0.2 10.8±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl
Panasonic
Original
Abstract: This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Complementary to 2SD2134 Unit: mm 3.8±0.2 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 0.8 C 16.0±1.0 pla d in ea ne clu se pla m d de vis ht ne ai ma s fo tp it f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P Panasonic
Original

D1274A

Abstract: B1317 40 50 60 60+10 400 ( * : 800V) *2SC4985 2SD2220© (Vceo =80V| i 2SD2134 2SB1435
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OCR Scan
D1274A B1317 C4714 D1707 b1108 c2258 transistor 2SC4627 2SC5021 2SC4655 2SC4809 2SC5295

D2375

Abstract: D1259A 180 (* : 300V) , 2SB1414 2SD2134 *A 2SC5340 400 (* : 800V) *2SC4985 35 2SB1413 i 2SD2133 1 40
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OCR Scan
D2375 D1259A transistor 2SA1949 D1265A d1267a 2sd2328a 2SA1790 2SC4626 2SC4808 2SA1806 2SD2345 2SA1791

MN1873287

Abstract: an6512n 2SC3944 2SD2134 - - - 2SD1264A - - - - - Note) Alternative product is, almost alike
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Original
MN15283 PNB2301M MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261

an6512n

Abstract: mn1225 2SC3870 2SC3210 2SC3352/A 2SC3972/A 2SC3211/A - 2SC3211 - 2SC4975 2SC2406 2SC3944 2SD2134 -
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OCR Scan
MN1201A MN1220 MN1276 MN1280 MN12C201D MN12C261D mn1225 mn6520 MN6130 MN6147C MN115P MN116P MN1201M MN1201S MN1202M

2sd 4515

Abstract: transistors 2sd 2500 40 50 60 60+10 400 ( * : 800V) *2SC4985 2SD2220© (Vceo =80V| i 2SD2134 2SB1435
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OCR Scan
25C1317 2SC1363 2SB1526 2SC4714 2sd 4515 transistors 2sd 2500 2SB1619 2SB1376 2sd darlington B1582 2SD2216 2SB1218A 2SA1309A 2SD601A 2SA719
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