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2SD2066 Datasheet

Part Manufacturer Description PDF Type
2SD2066 Various Russian Datasheets Transistor Original
2SD2066 N/A The Transistor Manual (Japanese) 1993 Scan
2SD2066 N/A Transistor Substitution Data Book 1993 Scan
2SD2066 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD2066 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD2066 N/A Japanese Transistor Cross References (2S) Scan
2SD2066 Panasonic Silicon NPN triple diffusion planar type transistor Scan

2SD2066

Catalog Datasheet MFG & Type PDF Document Tags

2SD2066

Abstract: 2SB1373 SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector , Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2066 Silicon , Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD2066 -
-
Original
Abstract: 2SD2066 Power Transistors 2SD2066 Silicon NPN Triple-Diffused Planar Type â  Package Dimensions High Power Amplifier Complementary Pair with 2SB1373 â  Features â'¢ H ig h -v o ltag e: V leo = 1 6 0 V (m inim um ) â'¢ M inim izes c o m p o n e n t c o u n ts and sim plifies circ u itry â'¢ V ery g o o d lin e a rity of DC c u r re n t gain (hFe) â'¢ H igh tra n sitio n fre q u e n c , thu (aC/W ) > N o te 2SD2066 = 1 0 -4 ip -3 IQ -2 lo -l 1 10 n>2 H)3 -
OCR Scan

2SD2066

Abstract: 2SB1373 Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q , P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SD2066 IC - VCE , (V) 10 Power Transistors 2SD2066 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000
Panasonic
Original

2SD2066

Abstract: 2SB1373 Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 3.2±0.1 3.5 q 19.0±0.3 q 16.2±0.5 q High breakdown voltage: VCEO = 160V , to 160 100 to 200 1 Power Transistors 2SD2066 IC - VCE (1) TC=Ta (2) With a 100 × , 2SD2066 Rth(t) - t Thermal resistance Rth(t) (°C/W) 10000 Note: Rth was measured at Ta=25°C and
Panasonic
Original
Abstract: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 4.0±0.1 Unit: mm M Di ain sc te on na tin nc ue e/ d 4.0±0.1 13.0±0.5 s Features q q 15.0±0.5 10.5±0.5 4.5±0.2 2.0±0.1 q q High breakdown voltage: VCEO , =2.5W) 700mA 2SD2066 IC - VCE IB=800mA 20 TC=25°C 600mA 500mA 400mA 300mA 12 200mA 8 VCE=5V IC - VBE , 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 2SD2066 Thermal resistance Rth(t) (°C/W Panasonic
Original

2sd2041

Abstract: 2SD2061 60 200 5 1 2 4 0.4 9 , * 2SB1373 TOP-3a BCE 2SD2066 (MT-1) ECB/Da 2SD2067 150* 10 -0.05 (T092-SL) ECB/Da
-
OCR Scan
2SD2042 2SD2043 2SD2044 2SD2046 2SD2047 2SD2048 2sd2041 2SD2073 2SD2076 2SB1376 2SD2085 ZSD2040 2SD2041

2SB1373

Abstract: 2SD2066 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2066 APPLICATIONS ·Designed for high power amplifications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Emitter Voltage VEBO Emitter-Base Voltage UNIT scs .i w Collector-Base Voltage VCEO VALUE w w -160 V
INCHANGE Semiconductor
Original

2SB1373

Abstract: 2SD2066 SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
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Original

TT 2076

Abstract: 2SD1491 - 258 - Type No. 2SD2056 2SD2057 2SD2058 * 2SD2059 * 2SD2060 2SD2061 ^ 2SD2062 2SD2063 2SD2064 2SD2066 , 2SD2067 2SD2068 2SD2069 2SD2070 2SD2071 2SD 2072 2SD 2073 2SD 2074 2SD 2075 2SD 2076 * 2SÖ 2077 2SD 2078 2SD 2079 2SD 2080 2SD 2081 2SD 2082 * 2S0 2084 2SD 2085 2SD 2086 2SD 2087 2SD 2088 2SD 2089 2SD 2090 m tt Manuf. £ = S ¥ SANYO 2SC3748 2SD2251 M - A f é T £ TOSHIBA 2SC3710 2SD1406 2SD1407 2SD1408 2SD1405 s i NEC 2SC3693 2SC3691 2SC4334 2SD1586 2SD1585 B
-
OCR Scan
2SD1266 2SC3964 2SC4062 2SD1491 2SD1929 TT 2076 2SC3907 toshiba 2056 nec 258 2SD2300 2SD1445A 2SD1270 2SD1267 2SC4008

D2029

Abstract: D2328 ) 2SB1371/2SD2064 2SB1421/2SD2140 2SB1362/2SD2053 2SB1372/2SD2065 2SB1361 /2SD2052 2SB1419 2SB1373/2SD2066
-
OCR Scan
2SD1641 D2029 D2328 2SD2340 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707

2SD2340 equivalent

Abstract: D2254 2SB1373/2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 180 15
-
OCR Scan
2SD1457 2SD1457A 2SC4535 2SD1831 D2254 2SD2340 equivalent 2SB1493 2SB1531 2SD2328 2SD1485 2SD1643/A 2SB1371

2SD1485

Abstract: 2SB1154/2SD1705 /2SD2064 2SB1421/2SD2140 2SB1362/2SD2053 2SB1372/2SD2065 2SB1361/2SD2052 2SB1419 2SB1373/2SD2066 2SB1347
-
OCR Scan
audio Darlington 200 W 2SC3054 2SC4258 2SB1373/2SD2066 2SB1317/2SD1975 2SB1529/2SD2328 2SB1250/2SD1890

C1959

Abstract: nec 2405 2SC2618 2SC4366 2SC2462 2SD2112 2SC3928 2SC3440 2SC3440 2SD1457 2SD2052 2SD2066
-
OCR Scan
2SD2404 2SD2407 2SD2409 2SD1509 2SD1651 2SD1554 C1959 nec 2405 NEC 2403 2sc4560 nec 2410 2SD2403 2SD2405 2SD2406 2SD2408

2sc2555

Abstract: 2SC3812 2SC4160 2SC2555 2SC4228 2SC3570 2SC4026 2SC3869 2SC4129 2SD1289 2SC3905 2SC2749 2SD2065 2SD2066 2SC3812
-
OCR Scan
2SC4625 2SC3447 2SC3796 2SC4618 2SC4649 2SC4738 2SC4316 2SC4640 ROHM 2SC2712 2SC4455 2SC2712 2SC4626 2SC4627 2SC4628 2SC4629

8a 949

Abstract: ILL30 Power Transistors 2SD20Ã"6 2SD2066 Silicon NPN Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SB1373 â  Features â'¢ High-voltage: Vleo=160V (minimum) â'¢ Minimizes component counts and simplifies circuitry â'¢ Very good linearity of DC current gain (hFE) â'¢ High transition frequency (f-r) â'¢ Wide area of safety operation (ASO) â  Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage VcBO 160 V Collector-emitter voltage
-
OCR Scan
8a 949 ILL30

Toshiba 2SC3281

Abstract: 2SC2987A 1716 ' fé T 2SC2987A 2SD2066 2SD 1717 / fé T 2SC3280 2SC2987A 2SD2029 2SD 1718 â" fÃ
-
OCR Scan
2SC3281 2SC2750 2SD1645 2SD1275A 2SD1288 2SD1499 Toshiba 2SC3281 2sc3281 toshiba 2SD1398 toshiba 2sc3280 2sd1703 2SD1511 2SC2681 2SD1638
Abstract: -3(a) (D64) TOP-3F(a) (D67) TOP-3L (D71) 2SB1371 /2SD2064 150 2SB1373/2SD2066 2SB1317 -
OCR Scan
2SB1500/2SD2273 2SB1251/2SD1891 2SB1501/2SD2274 2SB1252/2SD1892

2SD2340 equivalent

Abstract: 2SB1531 2SB1373/2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 180 15
-
OCR Scan
2SD2053 2sb1500 2SB1255 2sb1492 2sd205 2SD2052 equivalent 2SB1502/2SD2275 2SB1253/2SD1893 2SB1492/2S 2SB1531/2SD2340

2SD2340 equivalent

Abstract: D2250 2SB1372/2SD2065 2SB1361 /2SD2052 2SB1419 2SB1373/2SD2066 2SB1347/2SD2029 2SB1528/2SD2327 2SB1317/2SD1975
-
OCR Scan
D2250 d2554 2SB1502/2S D2275 2SB1492/2SD2254 2SB1493/2SD22 2SB1493/2SD2255

2SB13

Abstract: 2SD2066 Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type High Power Am plifier C om plem entary Pair with 2SD2066 F eatures · V ery good linearity of DC current gain · W ide area o f sa fety operation (ASO) · High transition freq u en cy (fT) · Optimum for hi-fi audio amplifier output * 3.2 ± 0 .1 (Iif e ) P ackage Dim ensions 15.5max. _ Unit : m m 4.7max. 2.1max, i 2.2max. i 1.1±0.1 Absolute M axim um Ratings (T c = 2 5 °C ) Item Collector-base voltage
-
OCR Scan
2SB13

S1113

Abstract: 2SB1373 Power Transistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2066 â  Features â'¢ Very good linearity of DC current gain (Iife) â'¢ Wide area of safety operation (ASO) â'¢ High transition frequency (f-r) â'¢ Optimum for hi-fi audio amplifier output â  Absolute Maximum Ratings (Tc=25°C) Item Symbol Value Unit Collector-base voltage Vcbo -160 V Collector-emitter voltage Vceo -160 V Emitter-base voltage Vebo -5 V Peak
-
OCR Scan
S1113
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