2SD1998 - Datasheet Archive

 

SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1998 Features Low saturation voltage. Contains diode between collector and

 

Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1998 2SD1998 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 5 A Collector dissipation PC 1.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current IcBO DC current Gain hFE Testconditons Min VCE = 2V , IC = 0.5A ìA 50 VCE = 2V , IC = 0.5A Cob VCB = 10V , f = 1MHz Collector-emitter saturation voltage Base-emitter saturation voltage 100 MHz 40 VCE(sat) IC = 2A , IB = 100mA VBE(sat) IC = 2V , IB = 100mA Collector-to-base breakdown voltage Unit 70 fT Output capacitance Max 1.0 VCE = 2V , IC = 2A Gain bandwidth product Typ VCB = 30V , IE = 0 0.2 pF 0.5 V 1.5 V 40 V IC = 10ìA , RBE = 40 V IC = 10mA , RBE = Collector-to-emitter breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V(BR)CEO Diode forward voltage VF Base-emitter resistance RBE IF = 0.5A 1.5 0.8 V kÙ Marking Marking DM www.kexin.com.cn 1