2SD1963 - Datasheet Archive

 

SMD Type Power Transistor 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum

 

Transistors SMD Type Power Transistor 2SD1963 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 3 A W Collector power dissipation PC 0.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 50 V Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=40V Emitter cutoff current IEBO VEB=5V DC current transfer ratio hFE VCE=2V, IC=0.5A VCE(sat) IC=1.5 A, IB=0.15A Collector-emitter saturation voltage Output capacitance fT Transition frequency Cob 0.5 0.5 180 ìA ìA 560 0.25 0.45 V VCE=6V, IE= -50mA, f=100MHz 150 MHz VCB=20V, IE=0A, f=1MHz 35 pF hFE Classification DG Marking Rank R S hFE 180 390 270 560 www.kexin.com.cn 1