NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SD1899 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| 2SD1899 | N/A | Transistor Substitution Data Book 1993 |
1 pages, |
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| 2SD1899 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| 2SD1899 | N/A | The Transistor Manual (Japanese) 1993 |
2 pages, |
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| 2SD1899 | NEC Electronics | NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
6 pages, |
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| 2SD1899 | NEC Electronics | Semiconductor Selection Guide |
399 pages, |
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| 2SD1899 | NEC Electronics | Silicon power transistor |
6 pages, |
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| 2SD1899 | NEC Electronics | Semiconductor Selection Guide 1995 |
226 pages, |
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| 2SD1899 | Transys Electronics | TO-252 Plastic-Encapsulated Transistors |
1 pages, |
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| 2SD1899 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Silicon Power Transistors 2SD1899,1899-Z 1899-Z NPN mm 5.0 �2 1.6 �2 VCEO = 60 V, IC(pulse , D18293JJ4V0DS004 D18293JJ4V0DS004 December 2007 NS 1986, 2006 "" PDF 2SD1899,1899-Z 1899-Z 2 D18293JJ4V0DS D18293JJ4V0DS 2SD1899,1899-Z 1899-Z D18293JJ4V0DS D18293JJ4V0DS 3 2SD1899,1899-Z 1899-Z 4 D18293JJ4V0DS D18293JJ4V0DS 2SD1899,1899-Z 1899-Z 200712 ... | Original |
7 pages, |
1899-Z 2SD1899 datasheet abstract |
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| Abstract: Silicon Power Transistors 2SD1899,1899-Z 1899-Z NPN mm 5.0 �2 1.6 �2 VCEO = 60 V, IC(pulse) = 5.0 A hFE 1 2 3 7.0 MIN. 1.1 �2 TA = 25癈 +0.2 +0.2 0.5 , 00.2 mm D18293JJ4V0DS004 D18293JJ4V0DS004 December 2007 NS 1986, 2006 "" PDF 2SD1899,1899-Z 1899-Z 2 D18293JJ4V0DS D18293JJ4V0DS 2SD1899,1899-Z 1899-Z D18293JJ4V0DS D18293JJ4V0DS 3 2SD1899,1899-Z 1899-Z 4 D18293JJ4V0DS D18293JJ4V0DS 2SD1899,1899-Z 1899-Z 200712 NEC 211-86681753 044(435)5111 NEC URL http ... | Original |
5 pages, |
1899-Z 1899 2SD1899 2SD1899 abstract |
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| Abstract: SILICON TRANSISTOR 2SD1899-Z NPIM SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1899-Z is , Japan NEC 2SD1899-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. , Collector to Emitter Voltage - V NEC 2SD1899-Z DERATING CURVE OF SAFE OPERATING AREA REVERSE BIAS SAFE , Cnllfintnr Current - A 3 NEC 2SD1899-Z BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 0.01 , Base Voltage - V 4 NEC 2SD1899-Z [MEMO] NEC i 2SD1899-Z Reference Application note name No. ... | OCR Scan |
6 pages, |
MEI-1202 2SD1899-Z 2SD1899-Z abstract |
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| Abstract: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier , PDF file and specifying it in the "Find what:" field. 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ3V0DS D18293EJ3V0DS 2SD1899-Z Data Sheet D18293EJ3V0DS D18293EJ3V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ3V0DS D18293EJ3V0DS 2SD1899-Z · The information in this document is current as of July, 2006. The information is subject to ... | Original |
5 pages, |
2SD1899-Z TC181 TC-1818A 2SD1899-Z abstract |
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| Abstract: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 · High hFE: hFE = 100 to 400 · Low VCE(sat): VCE(sat) 0.25 V 1 2 3 Note 5.6 , field. 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ4V0DS D18293EJ4V0DS 2SD1899-Z Data Sheet D18293EJ4V0DS D18293EJ4V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ4V0DS D18293EJ4V0DS 2SD1899-Z · The information in ... | Original |
5 pages, |
2SD1899-Z 2SD1899-Z abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251 FEATURES High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value 3.EMITTER Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 , 200-400 s Typical Characteristics 2SD1899-Z ... | Original |
3 pages, |
2SD1899-Z 2SD1899-Z abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value 3.EMITTER Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 , 200-400 s Typical Characteristics 2SD1899 ... | Original |
3 pages, |
2SD1899 2SD1899 abstract |
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| Abstract: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 0.50 -0.15 , Type 2SD1899-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ ... | Original |
2 pages, |
2SD1899-Z 2SD1899-Z abstract |
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| Abstract: 10 100 60 320 5 1 1 1.5 3 0.3 2SD1899 HS LF PA/MS PSW 60 60 3 1 10 10 60 100 400 2 0.6 0.25 1.2 1.5 0.15 2SD1899-Z HS LF PA/MS SW 60 60 3 1 10 10 60 100 400 2 0. 6 0. 25 1.2 1.5 0.15 2SD1902 2SD1902 SM PS» 60 , 8* 5 0.5 100* (TO-220FP) BCE 2SD1897 2SD1897 120* 5 1.5 0.5 0.5 2 30* SC-64 SC-64 BCEC 2SD1899 120* 5 1.5 0. 5 0.5 2 30* SC-63 SC-63 BCEC 2SD1899-Z 40* 5 0.5 110* 2SB1266 2SB1266 (T0220MF T0220MF) BCE 2SD1902 2SD1902 ... | OCR Scan |
2 pages, |
2SB1255 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1902 2SD1903 2SD1907 2SD1899-Z 2SD1915 2SD1891 abstract |
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| Abstract: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 , field. 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ4V0DS D18293EJ4V0DS 2SD1899-Z Data Sheet D18293EJ4V0DS D18293EJ4V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ4V0DS D18293EJ4V0DS 2SD1899-Z · The information in ... | Original |
7 pages, |
2SD1899-Z datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-252 FEATURES Power dissipation PCM: 1. BASE 2 W (Tamb=25) 2. COLLECTOR Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specifie) Test conditions MIN TYP ... | Original |
1 pages, |
2SD1899-Z 2SD1899-Z abstract |
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| Abstract: - 253 - S s Type No. tt € Manuf. S 4 SANYO * 2 TOSHIBA B m NEC B iL HITACHI * ± a FUJITSU fâ T MATSUSHITA h. m MITSUBISHI â-¡ - A 80HM 2SD 1883'- Â¥ 2SD1544 2SD1544 2SD2293 2SD2293 2SM738 2SM738 2SD 1884 - 4 2SD1545 2SD1545 2SD2295 2SD2295 2SD1738 2SD1738 2SD 1 885 ^ 4 2SD1546 2SD1546 2SD2298 2SD2298 2SD1739 2SD1739 2SD 1886 y 4 2SD1547 2SD1547 2SD1850 2SD1850 2SD 1887 - # 2SD1548 2SD1548 2SC411 2SC411ÃŽ 2SD 1888 âœ" â-¡ -A 2SD560 2SD560 2SD1169 2SD1169 2SD 1 889 /- â-¡ -A 2SD1336 2SD1336 2SD 1890 ^ fö T 2SD1414 2SD1414 2SD 1891 fâ T 2SD1414 2SD1414 2SD1589 2SD1589 2SD 1892 f ... | OCR Scan |
1 pages, |
2sc2562 2SD1406 2SD1546 2sd1547 2SD1548 2SD772 toshiba 2sd1407 2SD1544 2SD1545 2SD1738 2SD1739 2SD2293 2SD2295 2SD2298 2SD772 nec 2SD1544 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SD1899 | N/A | Medium Power, General Purpose | |
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| 2SD1899(Z) | N/A | Silicon NPN | |
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| 2SD1899Z | N/A | NPN Darlington Transistor | |
| KEC Part | Industry Part | Manufacturer | Category | Description |
| KTC2020D Buy | 2SD1899-Z Buy | NEC | BJT | General Purpose Transistor |
| KTC2020L Buy | 2SD1899 Buy | NEC | BJT | General Purpose Transistor |
| Toshiba Part | Industry Part | Manufacturer | Description | Category |
| 2SC6076 Buy | 2SD1899-Z Buy | NEC Electronics | High-Frequency Switching Power Transistor - New PW-Mold - | Transistors |
| Part | Similar Part | Notes |