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Part : 2SD1899-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 1,928 Best Price : $0.3790 Price Each : $0.7820
Part : 2SD1899-K-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 670 Best Price : $1.61 Price Each : $2.02
Part : 2SD1899-L(AZ) Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 675 Best Price : $1.61 Price Each : $2.02
Part : 2SD1899-L-Z-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 1,600 Best Price : $1.70 Price Each : $2.18
Part : 2SD1899-Z-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 5 Best Price : $0.5310 Price Each : $0.5310
Part : 2SD1899-Z-E1-AZ Supplier : Renesas Electronics Manufacturer : Chip1Stop Stock : 1,899 Best Price : $0.44 Price Each : $0.9070
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2SD1899- Datasheet

Part Manufacturer Description PDF Type
2SD1899 NEC Semiconductor Selection Guide 1995 Original
2SD1899 NEC Semiconductor Selection Guide Original
2SD1899 Transys Electronics TO-252 Plastic-Encapsulated Transistors Original
2SD1899 N/A Japanese Transistor Cross References (2S) Scan
2SD1899 N/A The Transistor Manual (Japanese) 1993 Scan
2SD1899 N/A Transistor Substitution Data Book 1993 Scan
2SD1899 N/A Shortform Data and Cross References (Misc Datasheets) Scan
2SD1899 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD1899 NEC Silicon power transistor Scan
2SD1899 NEC NPN SILICON EPITAXIAL TRANSISTOR MP-3 Scan
2SD1899-Z Kexin NPN Silicon Epitaxial Transistor Original
2SD1899-Z NEC Semiconductor Selection Guide 1995 Original
2SD1899-Z NEC Semiconductor Selection Guide Original
2SD1899-Z Transys Electronics TO-252 Plastic-Encapsulated Transistors Original
2SD1899-Z TY Semiconductor NPN Silicon Epitaxial Transistor - TO-252 Original
2SD1899-Z N/A Japanese Transistor Cross References (2S) Scan
2SD1899Z N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2SD1899-Z N/A The Transistor Manual (Japanese) 1993 Scan
2SD1899-Z N/A Transistor Substitution Data Book 1993 Scan
2SD1899-Z N/A Shortform Data and Cross References (Misc Datasheets) Scan
Showing first 20 results.

2SD1899-

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SILICON TRANSISTOR 2SD1899-Z NPIM SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1899-Z is , Corporation 1986 Printed in Japan NEC 2SD1899-Z ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC , AREA 1.0 2.0 5.0 10 20 60 100 Vce - Collector to Emitter Voltage - V NEC 2SD1899-Z DERATING CURVE , Base to Emitter Voltage - V 0.05 0.1 0.5 1.0 5.0 10 Ir - Cnllfintnr Current - A 3 NEC 2SD1899-Z , = 1.0 MHz 1.0 2.0 5.0 10 20 60 100 Vcb - Collector to Base Voltage - V 4 NEC 2SD1899-Z [MEMO -
OCR Scan
TC-1818A MEI-1202 IEI-1209 TC-6082 TEB-1003 TEB-1014
Abstract: Silicon Power Transistors 2SD1899,1899-Z NPN mm 5.0 ±0.2 1.6 ±0.2 VCEO = 60 V, IC , , 2006 "" PDF 2SD1899,1899-Z 2 D18293JJ4V0DS 2SD1899,1899-Z D18293JJ4V0DS 3 2SD1899,1899-Z 4 D18293JJ4V0DS 2SD1899,1899-Z 200712 NEC 211-86681753 044(435 NEC
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D18293JJ4V0DS004
Abstract: 2SD1899 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) 1 2 3 D-PAK(TO-252) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V , 13-Oct-08 2SD1899 Typical Characteristics WEITRON http://www.weitron.com.tw 2/4 13-Oct-08 2SD1899 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 13-Oct-08 2SD1899 TO Weitron
Original
Abstract: 2SD1899 Transistor(NPN) 1.BASE 2.COLLECTOR 3.EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage , Range hFE(2) M 100-200 L 160-320 K 200-400 2SD1899 Transistor(NPN) Typical Characteristics 2SD1899 Transistor(NPN) - -
Original
Abstract: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier , PDF file and specifying it in the "Find what:" field. 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ3V0DS 2SD1899-Z Data Sheet D18293EJ3V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ3V0DS 2SD1899-Z · The information in this document is current as of July, 2006. The information is subject to NEC
Original
TC181
Abstract: 2 30 10 100 60 320 5 1 1 1.5 3 0.3 2SD1899 HS LF PA/MS PSW 60 60 3 1 10 10 60 100 400 2 0.6 0.25 1.2 1.5 0.15 2SD1899-Z HS LF PA/MS SW 60 60 3 1 10 10 60 100 400 2 0. 6 0. 25 1.2 1.5 0.15 2SD1902 , * SC-64 BCEC 2SD1899 120* 5 1.5 0. 5 0.5 2 30* SC-63 BCEC 2SD1899-Z 40* 5 0.5 110 -
OCR Scan
2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1915 T0-220MF 2SD1922 2SD1903 2SD1897
Abstract: Silicon Power Transistors 2SD1899,1899-Z NPN mm 5.0 ±0.2 1.6 ±0.2 VCEO = 60 V, IC(pulse) = 5.0 A hFE 1 2 3 7.0 MIN. 1.1 ±0.2 TA = 25°C +0.2 +0.2 0.5 -0.1 0.5 -0.1 2.3 2.3 VCBO 60 V - VCEO 60 V - VEBO 7.0 , 1986, 2006 "" PDF 2SD1899,1899-Z 2 D18293JJ4V0DS 2SD1899,1899-Z D18293JJ4V0DS 3 2SD1899,1899-Z 4 D18293JJ4V0DS 2SD1899,1899-Z 200712 NEC 211-86681753 NEC
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1899
Abstract: IC SMD Type Product specification 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 0.50 -0.15 Low VCE(sat). +0.15 4.60-0.15 1 , Transistors IC SMD Type Product specification 2SD1899-Z Electrical Characteristics Ta = 25 TY Semiconductor
Original
Abstract: W-ìfcW WaL : mm) 2SD1899H®0 2SD1899-ZHffiSI 1 nm&m 1. ^-x 2. 3 V? 9 3. 4. Z2V? ? (7 2 NEC 2SD1899,1899-Z (Ta = 25 °C) TOTAL POWER DISSIPATION us. AMBIENT TEMPERATURE FORWARD BIAS SAFE , Corporation 1986 NEC 2SD1899,1899-Z «Ã"Wfttt (Ta - 25 °C) II g & # MIN. TYP. MAX. ip. {î 3 L à its , 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 - , 1.0 2.0 5.0 10 20 60 100 3 w ? ? â  Vcb (V) 4 SEC 2SD1899,1899-Z 5 íí iü V SB -J -M 1p o -
OCR Scan
899-Z 899Z SA3K PWS10 TC-6082A 2SD1899-ZH
Abstract: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 · High hFE: hFE = 100 to 400 · Low VCE(sat): VCE(sat) 0.25 V 1 2 3 Note 5.6 , . 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ4V0DS 2SD1899-Z Data Sheet D18293EJ4V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ4V0DS 2SD1899-Z · The information in this NEC
Original
Abstract: TO-251/TO-252-2L Transistor 2SD1899-Z(NPN) TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage , Rank Range hFE(2) M 100-200 L 160-320 K 200-400 TO-251/TO-252-2L Transistor 2SD1899-Z(NPN) Typical Characteristics TO-251/TO-252-2L Transistor 2SD1899-Z(NPN) - -
Original
HFE100
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO-252-2L FEATURES High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value 3.EMITTER Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter , 100-200 160-320 200-400 s Typical Characteristics 2SD1899 Jiangsu Changjiang Jiangsu Changjiang Electronics Technology
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251 FEATURES High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V 1.BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.COLLECTOR Symbol Parameter Value 3.EMITTER Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter , 100-200 160-320 200-400 s Typical Characteristics 2SD1899-Z Jiangsu Changjiang Jiangsu Changjiang Electronics Technology
Original
Abstract: '" IC 400 DC CURRENT GAIN 2000 2SD1899-Z 5.4mA 4.5mA 1000 3.6mA 2.7mA 500 Ta , JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SD1899 -Z TRANSISTOR (NPN) TO-251 FEATURES High hFE Low VCE(sat) 1.BASE MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Para meter 2.COLLECTOR Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage Jiangsu Changjiang Electronics Technology
Original
Abstract: . DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 , . 1986, 2006 2SD1899-Z 2 Data Sheet D18293EJ4V0DS 2SD1899-Z Data Sheet D18293EJ4V0DS 3 2SD1899-Z 4 Data Sheet D18293EJ4V0DS 2SD1899-Z · The information in this Renesas Electronics
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SD1899-Z TRANSISTOR (NPN) TO-251 TO-252-2L FEATURES High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V 123 1.BASE MAXIMUM RATINGS (TA=25â"ƒ unless otherwise noted) 2.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 60 VCEO , =1.5A hFE(2) M L K 100-200 160-320 200-400 μs Typical Characteristics 2SD1899-Z Jiangsu Changjiang Electronics Technology
Original
Abstract: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 0.50 -0.15 , SMD Type 2SD1899-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Kexin
Original
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR (NPN) TO â'" 252 FEATURES Low VCE(sat) High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25â"ƒ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 , hFE â'"â'" IC 400 DC CURRENT GAIN 2000 2SD1899 5.4mA 4.5mA 1000 3.6mA 2.7mA Jiangsu Changjiang Electronics Technology
Original
Abstract: SILICON TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2S D 1899-Z is designed fo r A u d io Frequency A m p lifie r and S w itching, especially in H y b rid Integrated Circuits. FEATURE PACKAGE DIMENSIONS in m illim e te rs · · High hpE hpE = "100 to 400 , c m 3 x 0 .7 m m * T c » 25 ' C 4 I6 2SD1899-Z ELECTRICAL CHARACTERISTICS (T , = 2 5°C ) C , 2SD1899-Z D E R A T I N G C U R V E OF SA FE O P E R A T IN G A R E A R EVE R SE BIA S S A FE O P E R -
OCR Scan
Abstract: -Z 2SB1261-Z 2SD1584-Z 2SD1899-Z 2SA1385-Z 2SC3518-Z ~10 2SD1448-Z 2SA1413-Z 2SC3632 , 2SD1584 2SB1261 2SD1899 2SC4339 ~3.0 ~5.0 2SA1385 2SC3518 2SA1648 2SC4332 2SA1647 , 60 V, 3A 2SB1261 2SD1899 2SB1217 2SD1818 2SA1385 2SC3518 2SB1151 2SD1691 2SB1578 NEC
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2SA1152 2SD1557 2SC4063 2SC4333 2SB1581 high hfe transistor 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674
Showing first 20 results.