2SD1771 2SD1771A 2SB1191 2SB1191A - Datasheet Archive

 

2SD1771, 2SD1771A Silicon NPN triple diffusion planar type 3.4±0.3 8.5±0.2 1.0±0.1 1.5±0.1

 

Power Transistors 2SD1771 2SD1771, 2SD1771A 2SD1771A Silicon NPN triple diffusion planar type 3.4±0.3 8.5±0.2 1.0±0.1 1.5±0.1 10.0±0.3 6.0±0.5 s Features 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 s Absolute Maximum Ratings 2SD1771 2SD1771 200 150 VCEO emitter voltage 2SD1771A 2SD1771A 180 V Emitter to base voltage VEBO 6 V Peak collector current ICP 2 A Collector current IC 1 6.0±0.3 V 3.4±0.3 1.0±0.1 +0.4 Collector to VCBO Unit: mm 8.5±0.2 +0 2SD1771A 2SD1771A 200 Unit 1.5­0.4 base voltage Ratings 10.0±0.3 2SD1771 2SD1771 1:Base 2:Collector 3:Emitter N Type Package 3 2.0 Symbol Collector to 2 (TC=25°C) 4.4±0.5 Parameter 0.5max. 3.0­0.2 q 1.1max. 0.8±0.1 4.4±0.5 q 1.5max. High collector to emitter VCEO Large collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. q Unit: mm R0.5 R0.5 0 to 0.4 2.54±0.3 A 14.7±0.5 For power amplification For TV vertical deflection output Complementary to 2SB1191 2SB1191 and 2SB1191A 2SB1191A 1.1 max. 5.08±0.5 Collector power TC=25°C dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg s Electrical Characteristics Parameter W 1.3 1 150 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 °C ­55 to +150 2 °C (TC=25°C) Symbol Conditions Collector cutoff current ICBO Emitter cutoff current IEBO min typ 2SD1771 2SD1771 voltage 2SD1771A 2SD1771A VCEO IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 µA 6 hFE1 * V 180 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA V 60 hFE2 Forward current transfer ratio µA 150 VEBO Emitter to base voltage Unit 50 VEB = 4V, IC = 0 Collector to emitter max 50 VCB = 200V, IE = 0 50 240 Base to emitter voltage VBE VCE = 10V, IC = 300mA 1 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V Transition frequency fT VCE = 10V, IC = 100mA, f = 1MHz 20 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 27 pF *h FE1 Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1771 2SD1771, 2SD1771A 2SD1771A PC - Ta IC - VCE IC - VBE 1.6 30 25 (1) 20 15 10 4 TC=25°C VCE=10V 1.4 IB=20mA Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 35 Collector current IC (A) Collector power dissipation PC (W) 40 1.2 1.0 10mA 8mA 0.8 6mA 0.6 4mA 0.4 3 25°C TC=100°C 2 ­25°C 1 2mA (2) 5 0.2 1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (°C) 4 8 16 20 24 0.8 1.2 1.6 fT - IC 1000 TC=100°C 1 25°C 0.3 ­25°C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 TC=100°C 300 25°C 100 ­25°C 30 10 3 0.03 0.1 0.3 1 10 3 ICP t=0.5ms 300ms 0.3 1ms 0.1 2SD1771 2SD1771 2SD1771A 2SD1771A 10ms 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) - t Thermal resistance Rth(t) (°C/W) Non repetitive pulse TC=25°C IC 30 Collector current IC (A) 102 1 100 0.1 0.01 0.03 3 Area of safe operation (ASO) 30 300 0.3 1 0.01 3 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25°C VCE=10V 1000 Forward current transfer ratio hFE IC/IB=10 10 100 Collector current IC (A) 0.4 Base to emitter voltage VBE (V) hFE - IC Collector current IC (A) 2 0 Collector to emitter voltage VCE (V) VCE(sat) - IC Collector to emitter saturation voltage VCE(sat) (V) 12 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10­1 10­2 10­4 10­3 10­2 10­1 1 Time t (s) 10 102 103 104 10