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Part Manufacturer Description PDF Type Ordering
2SD1761 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
40.44 Kb

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2SD1761 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
114.93 Kb

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2SD1761 N/A Transistor Substitution Data Book 1993
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1 pages,
35.79 Kb

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2SD1761 N/A The Transistor Manual (Japanese) 1993
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2 pages,
87.05 Kb

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2SD1761 ROHM Electronics NPN SILICON TRANSISTOR
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1 pages,
63.58 Kb

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2SD1761 ROHM Electronics TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR
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1 pages,
63.57 Kb

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2SD1761 Various Russian Datasheets Transistor
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8 pages,
82.42 Kb

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2SD1761 N/A Japanese Transistor Cross References (2S)
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1 pages,
34.26 Kb

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Catalog Search Results

Catalog Datasheet Results Type PDF Document Tags
Abstract: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN , Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 , Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1761 ... Original
datasheet

3 pages,
107.41 Kb

2SB1187 2SD1761 2SD1761 abstract
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Abstract: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN , Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors , MIN TYP. 60 MAX UNIT 320 Inchange Semiconductor Product Specification 2SD1761 ... Original
datasheet

3 pages,
76.29 Kb

2SB1187 2SD1761 2SD1761 abstract
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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 2SB1187 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS , hFE(1) D E F 60-120 100-200 160-320 Typical Characteristics 2SD1761 ... Original
datasheet

2 pages,
116.75 Kb

2SB1187 2SD1761 2SD1761 abstract
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Abstract: b 7 > is * 9 /Transistors 2SD1761 2SD1761 • Wft 1) Vci(«,-03V(Typ) LC*. (at lc /ie*=2A/0 2A) 2) 3) PC=30W Tc-25X:L • Features 1) Lo* collector saturation voltage Vc*«q=0 3V (Typ). lc/l«=2A/0 2A 2) Excellent current characteristic* of DC current gain 3} Large collector dissipation PC=30W (Tc*"25*C) 4) Complementary pair with 2SB1187 2SB1187 • / Absolute Maximum Ratings (Ta = 25C) Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • £11; ... OCR Scan
datasheet

1 pages,
63.57 Kb

2SD1781 2SB1187 TRANSISTOR NPN, p2a 2SD1761 2SD1761 abstract
datasheet frame
Abstract: h-7 >it* 9 /Transistors 2SBÎ187 2SB1187 2SB1187 • H* 1) PC-30W PC-30W(TC-25T TC-25T:)£:*?V», 3) 2S01761 2S01761 4) KTBoTi* • Features 1) LafQ« collector dissipation PC=30W fTc-25°C) 2) Wide ASO 3) Complementary pair *ntti 2SD1761 4) Full-moid covered fm enables easy insulation from neat sink Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • Dimension« (Unil: mm) T0220FP T0220FP • lftii«*g«/Absohjte Maximum Ratings (Ta=25C) Parameter Symtx* Lkiwift Un« -"i-xmis Vcoo -60 V 31/75 - 1Î7?IW5 Veto -«0 V -t-xmmi ... OCR Scan
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1 pages,
59.25 Kb

T0220FP 2SD1761 2SB1187 2S01761 PC-30W TC-25T 2SB1187 abstract
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Abstract: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 2SB1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications. .cn mi e ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER scs .i VALUE ww w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT -60 V -60 V ... Original
datasheet

2 pages,
214.65 Kb

2SB1187 transistor 2SD1761 2SB1187 2SB1187 abstract
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Abstract: Product Specification www.jmnic.com 2SB1187 2SB1187 Silicon Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT ... Original
datasheet

3 pages,
70.64 Kb

2SD1761 2SB1187 2SB1187 abstract
datasheet frame
Abstract: SavantIC Semiconductor Product Specification 2SB1187 2SB1187 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... Original
datasheet

3 pages,
108.75 Kb

2sb118 2SD1761 2SB1187 2SB1187 abstract
datasheet frame
Abstract: JMnic Product Specification 2SB1187 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter ... Original
datasheet

3 pages,
43.29 Kb

2SD1761 2SB1187 2SB1187 abstract
datasheet frame
Abstract: Inchange Semiconductor Product Specification 2SB1187 2SB1187 Silicon PNP Power Transistors DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1761 Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base OND IC Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO SEM GE PARAMETER TOR UC VALUE UNIT ... Original
datasheet

3 pages,
118.21 Kb

2SD1761 2SB1187 2SB1187 abstract
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Abstract: - 249 - S! £ Type No. tt « Manuf. = if SANYO TOSHIBA B m. NEC B iL HITACHI * ± a FUJITSU fö T MATSUSHITA H * MITSUBISHI a - A ROHM 2SD 1736 fâ T 2SD1653 2SD1653 2SD 173 7 « T 2SD1654 2SD1654 2SD 1738 fâ T 2SD1655 2SD1655 2SD 1739 fé T 2SD1656 2SD1656 2SD 1740 / «±B» 2SD1407 2SD1407 2SÜ1308 2SD1499 2SD1499 2SD1889 2SD1889 2SD 1756 B iL 2SD1608 2SD1608 2SD 1757 - â-¡ -A 2SD1048 2SD1048 2SC2859 2SC2859 2SD596 2SD596 2SD11Q1 2SD11Q1 2SD1328 2SD1328 2SC3440 2SC3440 2SD 1758 - â-¡ -A 2SD1806 2SD1806 2SC1449 2SC1449 2SD1775 2SD1775 2SD 1759 y â-¡ -A 2SD1260 2SD1260 2 S D 1 760 âœ" â-¡ -A 2 ... OCR Scan
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1 pages,
35.79 Kb

2SD1407 2SD1405 2SD1048 2SC2859 2SC1449 25c2655 2SD1653 2SD1654 2SD596 2SD2061 2SD1929 2SD1889 2sd1836 2SD1656 2SD1655 2SD1653 abstract
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Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
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Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
2SD1761 N/A Silicon NPN + Darlington

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2SD1761 ROHM Electronics Si NPN Power BJT

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NTE Electronics Cross Reference Results

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