NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2SC5318 | N/A | NPN Transistor |
3 pages, |
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| 2SC5318 | Toshiba | NPN EPITAXIAL PLANAR TYPE (VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS) |
1 pages, |
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| 2SC5318 | Toshiba | Transistor Silicon NPN Epitaxial Planar Type |
1 pages, |
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| 2SC5318 | N/A | Japanese Transistor Cross References (2S) |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) Unit in mm • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C , GHz - 0.9 1.8 dB NF (2) Vce = 3 V, Ic = 5 mA, f = 2 GHz - 1.3 2.2 1 2001-05-31 TOSHIBA 2SC5318 , handle with caution. 2 2001-05-31 TOSHIBA 2SC5318 RESTRICTIONS ON PRODUCT USE _000707E 000707E • TOSHIBA ... | OCR Scan |
3 pages, |
2SC5318 2SC5318 abstract |
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| Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) Unit in mm • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V , /2 TOSHIBA 2SC5318 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION ... | OCR Scan |
2 pages, |
2SC5318 2SC5318 abstract |
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| Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 1 8 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.3dB (f = 2GHz) • High Gain : Ga = 11.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) Marking 2 1 Type Name MT ~B-B~ 3 4 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 20 ... | OCR Scan |
1 pages, |
VHF-UHF Band Low Noise Amplifier 2SC5318 2SC5318 abstract |
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| Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 1 8 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.3dB (f = 2GHz) • High Gain : Ga = 11.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) Marking 2 1 Type Name MT ~B-B~ 3 4 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current ic 20 ... | OCR Scan |
1 pages, |
2SC5318 2SC5318 abstract |
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| Abstract: 2SC5263 2SC5263 R/O fT = 16 GHz high-current device 2SC5315 2SC5315 2SC5316 2SC5316 2SC5317 2SC5317 2SC5317FT 2SC5317FT 2SC5318 , lS21el2 (dB) Product no. TESM 2SC5318 3 SSM 2SC5317FT 2SC5317FT s High-Frequency USM , 2SC5261FT 2SC5261FT MT3S07T MT3S07T 2SC5317FT 2SC5317FT 2SC5322FT 2SC5322FT SMQ 2SC5257 2SC5257 2SC5262 2SC5262 MT4S07 MT4S07 2SC5318 2SC5323 2SC5323 ... | Original |
34 pages, |
gaas fet vhf uhf MT3S07U HN3C12FT Toshiba rf power transistors SSOP-5 0.65 JAPAN transistor 2SC5066 MT3S03AU MT3S03T MT3S06U MT6L58AT 3SK320 2SK3078 2SK3079 datasheet abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2SC5318 | N/A | Silicon NPN | |
| Part | Similar Part | Notes |