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2SC5318 Datasheet

Part Manufacturer Description PDF Type
2SC5318 N/A Japanese Transistor Cross References (2S) Scan
2SC5318 N/A NPN Transistor Scan
2SC5318 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan
2SC5318 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS) Scan

2SC5318

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) Unit in mm â'¢ Low Noise Figure â'¢ High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25 , TOSHIBA 2SC5318 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP , device electrostatic sensitivity. Please handle with caution. 2 2001-05-31 TOSHIBA 2SC5318 -
OCR Scan
Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16 GHz series) Unit in mm â'¢ Low Noise Figure â'¢ High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 8 V Collector-Emitter Voltage VCEO 5 V , 1/2 TOSHIBA 2SC5318 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION -
OCR Scan
961001EAA1
Abstract: TOSHIBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2SC5318 SYMBOL v CBO v CEO v EBO ic SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm -fr 2 .9 -0 .3 + 0.2 · · Low Noise Figure High Gain :NF = 1.3dB (f=2GHz) :Ga = 11.5dB (f=2GHz) RATING 8 5 1.5 20 10 150 125 -5 5 -1 2 5 UNIT V V V mA mA mW °C °C MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base -
OCR Scan
961001EAA2
Abstract: 2SC5318 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ â'¢ Low Noise Figure High Gain :NF = 1.3dB(f=2GHz) : Ga= 11.5dB (f=2GHz) s + 0.2 2 .9 - 0 .3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO -
OCR Scan
Abstract: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS · · Low Noise Figure High Gain : N F = 1.3dB (f=2GHz) 2SC5318 U nit in mm 2.9-0.3 II + 0.2 :G a -11.5dB (f-2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Base C urrent Collector Power Dissipation Junction Tem perature Storage Tem perature Range SYMBOL v CBO VCEO Ve -
OCR Scan
2-3J10
Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 1 8 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 1.3dB (f = 2GHz) â'¢ High Gain : Ga = 11.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) Marking 2 1 Type Name MT ~B-B~ 3 4 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current -
OCR Scan
BB34
Abstract: TOSHIBA 2SC5318 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 3 1 8 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS â'¢ Low Noise Figure : NF = 1.3dB (f = 2GHz) â'¢ High Gain : Ga = 11.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) Marking 2 1 Type Name MT ~B-B~ 3 4 MICROWAVE CHARACTERISTICS (Ta = 25°C) Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 8 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 1.5 V Collector Current -
OCR Scan
VHF-UHF Band Low Noise Amplifier
Abstract: 2SC5263 R/O fT = 16 GHz high-current device 2SC5315 2SC5316 2SC5317 2SC5317FT 2SC5318 , lS21el2 (dB) Product no. TESM 2SC5318 3 SSM 2SC5317FT s High-Frequency USM , 2SC5261FT MT3S07T 2SC5317FT 2SC5322FT SMQ 2SC5257 2SC5262 MT4S07 2SC5318 2SC5323 Toshiba
Original
2SC5085 2SC5066 2SC5110 2SC5108FT 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T MT6P06E MT6P03AE 2SC5065 2SC5090 2SC5095 MT3S06U MT3S07U