2002/95/EC 2SC5295J SC-89 SJC00283BED - Datasheet Archive

 

Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 ­0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05

 

This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). Transistors 2SC5295J 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 ­0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 ­0.01 0 to 0.02 (0.50)(0.50) 5° Absolute Maximum Ratings Ta = 25°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Rating VCBO 15 V VCEO 10 V 125 mW 125 °C Tstg Storage temperature V mA Tj Junction temperature 2 65 PC Collector power dissipation VEBO IC Collector current (0.375) 1.60±0.05 Unit -55 to +125 0.10 max. Parameter (0.80) 2 0.27±0.02 0.70+0.05 ­0.03 1 5° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. · High transition frequency fT · Low collector output capacitance (Common base, input open circuited) Cob · SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.85+0.05 ­0.03 3 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SC-89 SSMini3-F1 Package °C Marking Symbol: 3S Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 10 V, IE = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 1 µA hFE VCE = 8 V, IC = 20 mA 50 fT VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 Forward current transfer ratio * co Transition frequency nt in Collector-base cutoff current (Emitter open) /D is Collector output capacitance (Common base, input open circuited) VCB = 10 V, IE = 0, f = 1 MHz Cob 170 8.5 0.6 GHz 1.0 pF M ai nt en an Maximum unilateral power gain Noise figure VCE = 8 V, IC = 15 mA, f = 1.5 GHz 9 dB GUM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB NF ce S21e2 Foward transfer gain VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 7 3.0 dB Rank Q hFE 50 to 120 Publication date: December 2002 Pl ea Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification R 100 to 170 SJC00283BED SJC00283BED 1 This product complies with the RoHS Directive (EU 2002/95/EC 2002/95/EC). 2SC5295J 2SC5295J PC Ta IC VCE 30 Ta = 25°C 60 40 200 µA 20 150 µA 15 100 µA 10 50 µA 5 20 20 40 60 80 0 100 120 140 0 VCE(sat) IC 6 8 IC / IB = 10 10 Ta = 85°C 25°C -25°C Ta = 85°C 120 100 25°C 80 -25°C 60 40 0 1 10 Collector current IC (mA) 0 0.2 0.4 100 1 10 Collector current IC (mA) SJC00283BED SJC00283BED 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Cob VCB 20 0.01 0.1 40 0 12 VCE = 8 V 140 -25°C 25°C hFE IC 160 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 4 60 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 2 2 Ta = 85°C 80 20 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Collector current IC (mA) 80 0.1 VCE = 8 V 100 25 100 0 IC VBE 120 IB = 250 µA 120 Collector current IC (mA) Collector power dissipation PC (mW) 140 100 10 f = 1 MHz Ta = 25°C 1 0.1 0 4 8 12 16 Collector-base voltage VCB (V) 1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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