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2SC5178R 2SC5178R-T2 2SC5178R-T1 2SC5178 TC-2519 TC-8075 - Datasheet Archive
SILICON TRANSISTOR 2SC5178R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
DATA SHEET SILICON TRANSISTOR 2SC5178R 2SC5178R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS (Units: mm) +0.2 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) SYMBOL RATING UNIT Collector-to-base voltage VCBO 5 VCEO 3 VEBO 2 IC 10 PT 30 Tj 150 Tstg 65 to +150 +0.1 0.4 0.05 (1.9) °C Storage temperature +0.1 mW Junction temperature 4 mA Total power dissipation Electrode assignment 1. Emitter 2. Collector 3. Emitter 4. Base V Collector current 5° V Emitter-to-base voltage 5° V Collector-to-emitter voltage 5° 0 to 0.1 Remark Contact your NEC sales representatives to order samples for PARAMETER +0.1 0.05 +0.1 0.4 0.05 1 Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (collector) facing the perforations 5° 0.8 3000 units/reel Embossed tape, 8 mm wide, pins No. 3 (emitter) and No. 4 (base) facing the perforations +0.2 2SC5178R-T2 2SC5178R-T2 3000 units/reel 1.1 0.1 2SC5178R-T1 2SC5178R-T1 ARRANGEMENT 84T ORDERING INFORMATION QUANTITY 2 SOT-143 style (Pins for overseas use are assigned to the 2SC5178 2SC5178.) 3 +0.1 · 4-pin Mini-Mold package PART NUMBER 2.8 0.3 +0.2 1.5 0.1 0.6 0.05 | S21 | 2 = 10.5 dB TYP. @VCE = 1 V, I C = 5 mA, f = 2 GHz 0.4 | S21 | 2 = 11.5 dB TYP. @VCE = 2 V, I C = 7 mA, f = 2 GHz 0.16 0.06 · Low current consumption and high gain °C This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. DocumentNo. TC-2519 TC-2519 (O. D. No. TC-8075 TC-8075) Date Published April 1995 P Printed in Japan © 1995 2SC5178R 2SC5178R ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL CONDITIONS Collector cutoff current ICBO IEBO TYP. DC gain hFE VCE = 2 V, IC = 7 mANote 1 70 UNIT nA 100 VEB = 1 V, IC = 0 MAX. 100 VCB = 5 V, IE = 0 Emitter cutoff current MIN. nA 140 Forward transfer gain (1) | S21e | 2 VCE = 2 V, IC = 7 mA, f = 2 GHz 9.5 11.5 dB Forward transfer gain (2) | S21e | 2 VCE = 1 V, IC = 5 mA, f = 2 GHz 7.5 10.5 dB Noise figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz 1.5 2.0 dB Noise figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 2.0 dB Gain bandwidth product (1) fr VCE = 2 V, IC = 7 mA, f = 2 GHz 10.5 13.5 GHz Gain bandwidth product (2) fr VCE = 1 V, IC = 5 mA, f = 2 GHz 8.5 12 GHz Feedback capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHzNote 2 0.3 0.5 pF Notes 1. Measured with pulses: Pulse width 350 µs, duty cycle 2 %, pulsed 2. Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge. hFE class CLASS Marking FB 84 T 70 to 140 hFE CHARACTERISTIC CURVES (TA = 25 °C) COLLECTOR CURRENT vs. BASE-TO-EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 100 30 mW 0 50 100 Ambient temperature TA (°C) 2 VCE = 2 V 40 Collector current IC (mW) Total power dissipation PT (mW) 200 150 30 20 10 0 0.5 Base-to-emitter voltage VBE (V) 1.0 2SC5178R 2SC5178R COLLECTOR CURRENT vs. COLLECTOR-TO-EMITTER VOLTAGE DC GAIN vs. COLLECTOR CURRENT 500 20 200 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A I B = 20 µ A 15 10 5 VCE = 2 V DC gain hFE Collector current IC (mA) 25 100 50 VCE = 1 V 20 10 0 2.4 2.2 2.6 1 Collector-to-emitter voltage VCE (V) 16 Forward transfer gain | S21e | 2 (dB) Gain bandwidth product fT (GHz) 14 2V 12 VCE = 1 V 10 8 6 4 1 2 5 10 20 100 f = 2 GHz 12 2V 10 VCE = 1 V 8 6 4 10 1 Collector current IC (mA) 2 5 10 Collector current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT FEEDBACK CAPACITANCE vs. COLLECTOR-TO-BASE VOLTAGE 4 0.5 f = 2 GHz Feedback capacitance Cre (pF) f = 2 GHz 3 Noise figure NF (dB) 50 FORWARD TRANSFER GAIN vs. COLLECTOR CURRENT f = 2 GHz 14 5 Collector current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 18 2 VCE = 1 V VCE = 2 V 2 1 0 1 2 5 10 20 Collector current IC (mA) 100 0.4 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 Collector-to-base voltage VCB (V) 3 2SC5178R 2SC5178R S PARAMETERS VCE = 1 V, IC = 1 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.954 9.5 3.362 168.9 0.026 77.0 0.989 6.9 400.00 0.933 19.1 3.305 158.2 0.061 76.5 0.972 13.5 600.00 0.902 28.3 3.251 148.3 0.084 68.1 0.941 20.5 800.00 0.855 38.2 3.204 137.6 0.106 63.3 0.917 27.6 1000.00 0.798 48.3 3.113 126.9 0.150 54.1 0.890 34.5 1200.00 0.739 59.2 3.032 116.5 0.170 53.5 0.842 40.8 1400.00 0.667 69.1 2.892 107.3 0.178 45.2 0.769 47.5 1600.00 0.597 77.4 2.719 96.6 0.195 37.7 0.729 52.4 1800.00 0.519 87.9 2.626 88.5 0.213 31.8 0.675 60.3 2000.00 0.472 97.7 2.484 80.5 0.223 31.7 0.634 64.6 2200.00 0.413 110.8 2.345 72.8 0.233 24.9 0.582 70.9 2400.00 0.365 123.4 2.255 64.6 0.238 18.9 0.530 77.0 2600.00 0.306 135.0 2.169 58.1 0.249 14.2 0.496 83.0 2800.00 0.280 154.3 2.015 51.3 0.254 14.6 0.452 88.0 3000.00 0.259 174.4 1.982 44.3 0.239 10.0 0.461 99.2 VCE = 1 V, IC = 3 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) ANG MAG ANG MAG ANG MAG ANG 200.00 0.878 16.5 8.193 161.7 0.030 68.5 0.968 11.6 400.00 0.789 31.1 7.559 145.1 0.054 72.2 0.899 22.2 600.00 0.694 45.0 6.833 130.9 0.075 64.4 0.816 30.8 800.00 0.589 56.7 6.147 118.1 0.095 53.7 0.727 38.1 1000.00 0.501 69.1 5.496 106.8 0.115 53.5 0.673 45.4 1200.00 0.423 80.2 4.936 96.9 0.120 52.5 0.600 49.8 1400.00 0.340 90.7 4.427 88.7 0.140 47.1 0.537 54.3 1600.00 0.280 100.1 3.975 80.0 0.141 41.7 0.496 60.1 1800.00 0.221 114.0 3.672 73.1 0.163 40.1 0.437 66.0 2000.00 0.196 125.8 3.347 66.4 0.181 34.6 0.419 69.6 2200.00 0.157 142.7 3.066 60.4 0.176 33.4 0.374 75.8 2400.00 0.160 168.6 2.893 53.8 0.199 30.6 0.333 76.7 2600.00 0.135 162.2 2.715 48.4 0.202 28.2 0.304 85.6 2800.00 0.181 148.5 2.530 42.5 0.214 29.8 0.284 92.0 3000.00 4 MAG 0.204 127.6 2.438 36.8 0.218 24.2 0.287 99.7 2SC5178R 2SC5178R VCE = 1 V, IC = 5 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.801 21.6 11.278 156.4 0.030 69.6 0.935 14.8 400.00 0.677 39.6 9.808 136.7 0.049 71.2 0.833 26.4 600.00 0.557 53.2 8.302 121.4 0.063 58.9 0.717 35.2 800.00 0.451 66.4 7.123 108.9 0.091 56.5 0.628 40.7 1000.00 0.358 76.9 6.140 98.1 0.095 51.6 0.577 45.8 1200.00 0.277 90.1 5.377 89.3 0.107 49.9 0.503 50.4 1400.00 0.222 100.7 4.737 81.6 0.122 47.7 0.454 52.6 1600.00 0.172 113.7 4.198 74.0 0.144 44.3 0.419 55.7 1800.00 0.115 135.4 3.838 67.7 0.153 44.1 0.376 61.9 2000.00 0.111 151.0 3.476 61.8 0.159 43.0 0.346 66.5 2200.00 0.118 173.9 3.178 56.1 0.182 35.9 0.308 71.1 2400.00 0.121 159.2 2.982 50.4 0.195 38.3 0.280 79.3 2600.00 0.142 137.2 2.795 45.1 0.191 36.9 0.264 83.8 2800.00 0.181 128.6 2.589 39.5 0.226 28.0 0.242 87.0 3000.00 0.210 108.6 2.489 34.1 0.237 28.0 0.239 100.8 VCE = 1 V, IC = 7 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.732 26.3 13.376 152.5 0.024 74.3 0.900 16.6 400.00 0.593 44.8 10.989 130.9 0.047 67.6 0.782 28.3 600.00 0.453 59.2 8.954 115.8 0.060 67.1 0.664 35.6 800.00 0.341 71.0 7.441 103.6 0.075 60.2 0.585 40.4 1000.00 0.254 83.3 6.267 93.7 0.094 58.6 0.530 43.6 1200.00 0.193 95.5 5.441 85.6 0.103 56.9 0.476 47.5 1400.00 0.144 112.2 4.757 78.5 0.120 51.4 0.434 50.8 1600.00 0.118 136.4 4.207 71.4 0.129 50.9 0.405 53.5 1800.00 0.088 159.6 3.814 65.8 0.140 46.9 0.363 58.7 2000.00 0.084 178.8 3.464 60.2 0.155 45.9 0.334 64.2 2200.00 0.099 148.2 3.167 54.8 0.174 41.3 0.315 67.2 2400.00 0.134 127.4 2.939 49.3 0.180 40.2 0.290 73.0 2600.00 0.175 117.8 2.771 44.7 0.187 38.8 0.274 79.0 2800.00 0.212 112.4 2.578 39.6 0.206 32.0 0.266 82.0 3000.00 0.265 109.7 2.476 33.9 0.229 31.0 0.264 90.8 5 2SC5178R 2SC5178R VCE = 2 V, IC = 1 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.955 8.7 3.382 169.5 0.029 81.7 0.997 6.3 400.00 0.941 17.7 3.329 159.3 0.054 77.2 0.976 12.6 600.00 0.899 25.9 3.274 149.7 0.075 71.5 0.953 19.0 800.00 0.864 35.3 3.246 139.5 0.102 65.9 0.927 25.7 1000.00 0.824 45.2 3.188 129.4 0.121 60.3 0.901 31.9 1200.00 0.757 54.2 3.101 119.3 0.143 54.1 0.860 37.5 1400.00 0.695 63.4 2.976 110.2 0.168 43.6 0.800 44.8 1600.00 0.623 73.6 2.797 99.8 0.177 40.5 0.760 50.0 1800.00 0.548 81.4 2.721 91.7 0.198 37.2 0.717 56.2 2000.00 0.503 92.5 2.601 83.9 0.198 32.3 0.670 61.8 2200.00 0.429 102.0 2.430 76.0 0.201 28.3 0.616 66.6 2400.00 0.392 112.4 2.376 68.4 0.228 23.9 0.561 72.4 2600.00 0.310 127.2 2.269 61.2 0.221 20.4 0.524 77.6 2800.00 0.289 140.6 2.134 54.4 0.224 13.3 0.509 82.8 3000.00 0.248 159.0 2.112 48.0 0.228 10.6 0.498 90.5 VCE = 2 V, IC = 3 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) ANG MAG ANG MAG ANG MAG ANG 200.00 0.877 14.6 8.210 162.6 0.026 74.3 0.971 10.2 400.00 0.807 28.4 7.644 147.0 0.049 78.5 0.924 19.7 600.00 0.723 40.8 6.973 133.6 0.070 67.8 0.850 28.0 800.00 0.624 52.1 6.331 120.8 0.087 56.4 0.771 34.5 1000.00 0.531 61.9 5.727 109.6 0.101 54.9 0.703 40.6 1200.00 0.442 72.6 5.160 100.0 0.116 49.8 0.651 45.6 1400.00 0.380 80.4 4.647 91.6 0.122 47.8 0.589 50.6 1600.00 0.292 88.6 4.192 83.0 0.138 44.6 0.525 54.8 1800.00 0.249 98.4 3.880 76.1 0.153 40.2 0.487 60.1 2000.00 0.208 112.1 3.553 69.5 0.161 42.0 0.461 63.6 2200.00 0.167 122.0 3.276 63.0 0.172 37.5 0.427 68.2 2400.00 0.142 144.3 3.074 56.9 0.191 36.8 0.392 72.2 2600.00 0.115 170.2 2.915 51.4 0.180 33.3 0.359 80.1 2800.00 0.140 165.8 2.697 45.6 0.192 28.3 0.332 85.2 3000.00 6 MAG 0.154 134.5 2.606 40.2 0.203 26.6 0.330 91.8 2SC5178R 2SC5178R VCE = 2 V, IC = 5 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.802 18.8 11.437 157.7 0.026 89.7 0.945 12.9 400.00 0.700 35.7 10.038 138.7 0.044 66.9 0.862 23.3 600.00 0.588 47.4 8.649 124.1 0.061 68.2 0.760 31.0 800.00 0.483 59.2 7.480 111.5 0.082 58.5 0.673 37.1 1000.00 0.387 68.4 6.479 100.9 0.102 56.1 0.612 42.0 1200.00 0.308 78.3 5.695 92.0 0.101 52.1 0.559 46.1 1400.00 0.258 86.5 5.044 84.5 0.119 53.7 0.496 48.7 1600.00 0.193 94.3 4.494 76.8 0.134 48.5 0.460 52.0 1800.00 0.139 110.4 4.112 70.8 0.147 49.4 0.417 55.2 2000.00 0.116 120.7 3.746 64.7 0.145 43.7 0.403 60.2 2200.00 0.075 143.0 3.429 59.1 0.168 40.5 0.368 64.4 2400.00 0.094 174.9 3.204 53.1 0.186 40.7 0.329 69.5 2600.00 0.086 149.7 3.040 48.0 0.196 35.9 0.307 76.1 2800.00 0.131 125.6 2.805 42.8 0.201 37.7 0.296 77.7 3000.00 0.164 116.1 2.701 37.2 0.237 32.4 0.276 86.6 VCE = 2 V, IC = 7 mA, Zo = 50 FREQUENCY S11 S21 S12 S22 (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 200.00 0.754 22.1 13.572 154.1 0.025 79.8 0.925 14.3 400.00 0.620 39.0 11.414 133.6 0.042 66.8 0.823 24.8 600.00 0.501 50.8 9.431 118.7 0.060 64.8 0.714 31.5 800.00 0.376 61.0 7.926 106.6 0.068 57.5 0.639 37.0 1000.00 0.298 70.4 6.730 96.7 0.086 58.3 0.587 40.7 1200.00 0.224 78.7 5.860 88.5 0.100 60.1 0.528 43.5 1400.00 0.177 87.7 5.137 81.7 0.106 57.2 0.487 45.0 1600.00 0.132 96.9 4.552 74.4 0.118 53.2 0.448 48.8 1800.00 0.080 108.7 4.145 69.0 0.131 53.1 0.421 51.4 2000.00 0.058 128.1 3.769 63.3 0.143 48.0 0.397 57.7 2200.00 0.036 178.5 3.425 57.9 0.166 45.1 0.378 60.3 2400.00 0.067 145.7 3.217 52.8 0.161 46.8 0.341 66.6 2600.00 0.104 122.4 3.026 48.0 0.183 39.2 0.321 72.3 2800.00 0.141 118.8 2.819 43.2 0.197 36.6 0.310 74.1 3000.00 0.205 107.8 2.735 37.7 0.193 33.2 0.321 78.8 7 2SC5178R 2SC5178R [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8