2SC5099 2SA1907 - Datasheet Archive

 

Product Specification 2SC5099 Silicon NPN Power Transistors DESCRIPTION With TO-3PML package Complement to type 2SA1907

 

JMnic Product Specification 2SC5099 2SC5099 Silicon NPN Power Transistors DESCRIPTION With TO-3PML package Complement to type 2SA1907 2SA1907 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 1 JMnic Product Specification 2SC5099 2SC5099 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A;IB=0.2 A 0.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 A IEBO Emitter cut-off current VEB=6V; IC=0 10 A hFE DC current gain IC=2A ; VCE=4V fT Transition frequency IE=-0.5A ; VCE=12V 20 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 110 pF 0.16 s 2.60 s 0.34 s 80 UNIT V 50 180 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A;RL=10 IB1=-IB2=0.3A VCC=30V hFE classifications O P Y 50-100 70-140 90-180 2 JMnic Product Specification 2SC5099 2SC5099 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SC5099 2SC5099 Silicon NPN Power Transistors 4