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2SC5010 Datasheet

Part Manufacturer Description PDF Type
2SC5010 NEC NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original
2SC5010 NEC Semiconductor Selection Guide Original
2SC5010 N/A High Frequency Device Data Book (Japanese) Scan
2SC5010 N/A Japanese Transistor Cross References (2S) Scan
2SC5010FB NEC NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold Original
2SC5010FB-T1 NEC NPN Silicon Epitaxial Transistor 3 Pin Ultra Super Mini Mold Original
2SC5010-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original
2SC5010-T1/-T2 NEC NPN epitaxial-type silicon transistor Original
2SC5010-T1_-T2 NEC NPN epitaxial-type silicon transistor Original

2SC5010

Catalog Datasheet MFG & Type PDF Document Tags

nec 2401 831

Abstract: nec 2401 pcs. +0.1 ­0.05 2SC5010-T1 Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape. 0.15 50 pcs/Unit. 0 to 0.1 2SC5010 PACKING STYLE 0.6 QUANTITY , DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low , Published July 1995 P Printed in Japan © 1993 2SC5010 ELECTRICAL CHARACTERISTICS (TA = 25 °C
NEC
Original
nec 2401 831 nec 2401 marking 83 437 20000 7749 transistor

nec 2401 831

Abstract: nec 2401 pcs. +0.1 ­0.05 2SC5010-T1 Embossed tape 8 mm wide. Pin3(Collector) face to perforation side of the tape. 0.15 50 pcs/Unit. 0 to 0.1 2SC5010 PACKING STYLE 0.6 QUANTITY , . DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise , Published July 1995 P Printed in Japan © 1993 2SC5010 ELECTRICAL CHARACTERISTICS (TA = 25 °C
Renesas Electronics
Original
nec 2035 744 3699 npn

2SC5743

Abstract: 2SC5600 2SC5007 µPA832TF 2SC5006 2SC5010 µPA833TF 2SC5195 2SC5010 2SC5008 µPA801T, Q1 , µPA834TF 2SC5007 2SC5006 2SC5009 µPA835TC, 2SC5010 2SC5006 2SC5010 2SC5195 2SC5007 TC, TF µPA805T TF µPA806T 2SC5010 µPA826TC, µPA807T 2SC5181 µPA827TF µPA808T, TC 2SC5186 µPA828TF 2SC5010 TF µPA836TC, TD, TF TC, TF 2SC5186 2SC5195 µPA839TF 2SC5008 2SC5006 2SC5600 µPA840TC 2SC5010 2SC5007 2SC5668 µPA841TC
NEC
Original
2SC5743 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP PC8172TB PC8187TB

transistor NEC B 617

Abstract: nec 2035 744 2SC5010 2SC5010-T1 p l C N 1 - f~ ~ \ - r r~r~ 3* ° 1 QUANTITY 50 pcs/Unit. 3 kpcs , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in , Insertion Power Gain Noise Figure SYMBOL ICBO Iebo hFE 2SC5010 MIN. TYP. MAX. 0.1 0.1 UNIT , Current - mA NEC 2SC5010 MAXIMUM AVAILABLE GAIN, INSERTION N F - Noise Figure - dB 0.5 1
-
OCR Scan
transistor NEC B 617 transistor 3568 zo 607 p 408 ic 151 811

3699 npn

Abstract: 2SC5010 8 mm 2SC5010-T1 3 kpcs 3 0 ~ 0.1 +0.1 ­0.05 50 pcs 50 pcs TA = 25 0.15 2SC5010 0.6 0.75 ± 0.05 VCBO 9 V VCEO 6 V , Silicon Transistor 2SC5010 NPN mm 1.6 mm × 0.8 mm 1.6 ± 0.1 0.8 ± 0.1 fTfT = 12 , 1. 2. 3. P10389JJ2V0DSJ1 TD-7952 December 2000 N CP(K) 1993 2SC5010 , 10 20 IC(mA) 50 100 2SC5010 2 S2le -IC fT-IC 12 VCE = 3 V f = 2 GHz
NEC
Original
PW350
Abstract: - 1 PART QUANTITY NUMBER PACKING STYLE 2SC5010 50 pcs/Unit. Embossed tape 8 mm wide. 2SC5010-T1 3 kpcs/Reel. of the tape. Pin3(Collector) face to perforation side , DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA , Corporstion 1993 NEC 2SC5010 ELECTRICAL CHARACTERISTICS (T a = 25 °C) CHARACTERISTIC SYMBOL , to 150 Ic - Collector Current - m A Ic - Collector Current - mA NEC 2SC5010 N - -
OCR Scan

2SK2396

Abstract: PC2763 (NE68419) 2SC5010(NE68519) 2SC5011(NE85618) 2SC5012(NE68118) 2SC5013(NE68018) 2SC5014(NE68418) 2SC5015 , , TF 2SC5006 µPA831TC, TF 2SC5006 2SC5006 2SC5195 2SC5007 2SC5007 2SC5010 2SC5010 2SC5006 , µPA806T µPA807T µPA808T µPA809T, TF 2SC5009 2SC5010 2SC5181 2SC5186 2SC5195 µPA835TC, TF 2SC5010 µPA826TC, TF 2SC5010 2SC5181 2SC5186 2SC5195 µPA836TC, TF 2SC5010 µPA827TF µPA828TF µPA814T, TC, TF 2SC5195 µPA837TF µPA838TF µPA839TF µPA840TC 2SC5181 2SC5195 2SC5008 2SC5010 µPA829TF T
NEC
Original
PC2763 PC3210 PC2711 2SK2396 pc1658 ne27283 2SC3545 2SC3357 X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA

2SK2396A

Abstract: NEC 2SK2396A *2 2SC4959 2SC4957 2SC5015 2SC5010 2SC5435 2SC5617 2SC5652 2SC5602 2SC5603 , 2SC5006 2SC5007 2SC5005 2SC5004 2SC5009 2SC5010 2SC5181 2SC5186 2SC5195 Package size Part No , ) µPA821TC,TF µPA822TF 2SC5006 2SC5007 µPA826TC,TF µPA827TF µPA828TF µPA829TF 2SC5010 2SC5181 , 2SC No. Q1 2SC5006 2SC5006 2SC5195 2SC5007 2SC5010 2SC5010 2SC5181 2SC5195 2SC5008 2SC5010 Q2 2SC5007 2SC5010 2SC5010 2SC5006 2SC5006 2SC5195 2SC5195 2SC5186 2SC5006 2SC5007 TF
NEC
Original
P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a 2SC2407 UAA 1006

nf025

Abstract: NE27283 2SC5005 2SC5006 2SC5007 2SC5008 2SC5009 2SC5010 (NE73440B) (NE73435) (NE02135) (NE02133) (NE85632 , 2SC5010 2SC5181 2SC5186 2SC5195 C1 B2 C2 2SC No. (×2) 2SC5008 2SC5006 2SC5007 2SC5005 C1 2SC , µPA822TF 2SC5007 µPA814T,TC,TF 2SC5195 µPA826TC, TF 2SC5010 µPA827TF 2SC5181 µPA828TF 2SC5186 , 2SC5010 µPA836TC, TF 2SC5010 µPA837TF 2SC5181 µPA838TF 2SC5195 µPA839TF 2SC5008 µPA840TC 2SC5010 2SC5007 2SC5010 2SC5010 2SC5006 2SC5006 2SC5195 2SC5195 2SC5186 2SC5006 2SC5007 T : 2.0 × 1.25 × 0.9
NEC
Original
nf025 upc27 x-band power transistor 100W P147D NE42484 uPG508 950MH 500MH PC2723T PC3206GR PC3211GR PC2710

transistor 2SC5066

Abstract: BFP620 MT4S101U 2SC5508 2SC5509 2SC5010 2SC5435 2SC5317 2SC5317FT 2SC5316 MT3S03AS MT3S03AT MT3S03AU
-
Original
NESG250134 NESG260234 BFP450 BFP620 2SC5067 2SC5064 transistor 2SC5066 2sc5066 UPC2709 2SC5066 data sheet THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z

OF IC 7909

Abstract: P14553EJ1V0DS00 DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5010) FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD FEATURES · Low noise and high gain · Operable at low voltage · Small feedback capacitance: Cre = 0.4 pF TYP. · Flat-lead 6-pin thin-type ultra super minimold package · Built-in 2 transistors (2 × 2SC5010) ORDERING INFORMATION Part Number µPA826TC µPA826TC-T1 Package Quantity Supplying Form Flat-lead 6
NEC
Original
OF IC 7909 P14553EJ1V0DS00 MARKING 702 6pin ic

2SC5801

Abstract: A Business Partner of Renesas Electronics Corporation. Preliminary PA862TD NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold FEATURES · Low voltage operation Data Sheet R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 · 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V , BUILT-IN TRANSISTORS Q1 3-pin thin-type ultra super minimold part No. 2SC5010 Q2 2SC5801
Renesas Electronics
Original
PA862TD-T3 PA862TD-A PA862TD-T3-A

2SC5006

Abstract: 7805 nec DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES · 2 different built-in transistors (2SC5010, 2SC5006) · Low noise Q1: NF = , TRANSISTORS Q1 2SC5010 3-pin ultra super minimold part No. Q2 2SC5006 ORDERING INFORMATION Part
NEC
Original
7805 nec NEC JAPAN 7805 PA835TC-T1 PU10087EJ01V0DS

marking 89

Abstract: 3771 nec DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES · 2 different built-in transistors (2SC5010, 2SC5007) · Low noise Q1: NF = , TRANSISTORS Q1 2SC5010 3-pin ultra super minimold part No. Q2 2SC5007 ORDERING INFORMATION Part
NEC
Original
marking 89 3771 nec PA840TC-T1 PU10088EJ01V0DS

marking tk

Abstract: 2SC5010 MAXIMUM RATINGS (TA = 25 °C) 0.3 +0.1 ­0 0.8 ± 0.1 · Contains same chip as 2SC5010 PIN
NEC
Original
marking tk V 8623 transistor 9418 transistor
Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS (in mm) FEATURE â'¢ Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) â'¢ 0.8 ± 0.1 Contains same chip as 2SC5010 ABSOLUTE MAXIMUM RATINGS (T a = 25 °C) PARAM ETER SYMBOL RATING UNIT C o llector to Base Voltage VcBO 9 V C o llector to Em itter Voltage VcEO 6 V -
OCR Scan

prime 15005

Abstract: pa 4010 IC NE68519 2SC5010 19 NE6853Q 2SC4959 30 NE68533 2SC4955 33 NE68S39 2SC4957 39 PARAMETERS AND
-
OCR Scan
NE685 prime 15005 pa 4010 IC ne665 T2B SOT23 NE68518 UTUNE33 NE68518-T1 NE68519-T1 NE68530-T1

IC 7805 14 pin

Abstract: 2SC5006 Flat-lead 6-pin thin-type ultra super minimold package · Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN TRANSISTORS Q1 3-pin ultra super minimold part No. Q2 2SC5010 2SC5006 ORDERING
NEC
Original
IC 7805 14 pin
Abstract: Preliminary Data Sheet μPA862TD NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold R09DS0032EJ0200 Rev.2.00 Dec 19, 2011 FEATURES â'¢ Low voltage operation â'¢ 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low , > 2SC5010 3-pin thin-type ultra super minimold part No. Q2 2SC5801 ORDERING Renesas Electronics
Original

2SC5007

Abstract: 2SC5010 Flat-lead 6-pin thin-type ultra super minimold package · Built-in 2 different transistors (2SC5010, 2SC5007) BUILT-IN TRANSISTORS Q1 3-pin ultra super minimold part No. Q2 2SC5010 2SC5007 ORDERING
NEC
Original
nec 5201

2SC5007

Abstract: 2SC5010 . FEATURES · 2 different built-in transistors (2SC5010, 2SC5007) · Low noise Q1: NF = 1.5 dB TYP. @ VCE = , 2SC5010 3-pin ultra super minimold part No. Q2 2SC5007 ORDERING INFORMATION Part Number
NEC
Original
Abstract: Preliminary Data Sheet PA862TD NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold FEATURES · Low voltage operation · 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4.5 , No. 2SC5010 Q2 2SC5801 ORDERING INFORMATION Part Number PA862TD PA862TD-T3 Order Renesas Electronics
Original
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