2SC4981 ITO-220 - Datasheet Archive

 

Product Specification 2SC4981 Silicon NPN Power Transistors DESCRIPTION With ITO-220 package Switching power transistor Low

 

JMnic Product Specification 2SC4981 2SC4981 Silicon NPN Power Transistors DESCRIPTION With ITO-220 ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220 ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 1.5 A IBM Base current-peak 2 A PT Total power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 MAX UNIT 5.0 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case JMnic Product Specification 2SC4981 2SC4981 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.2A 0.3 V VBEsat Base-emitter saturation voltage IC=3.5A; IB=0.2A 1.2 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS MIN TYP. MAX 80 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE DC current gain IC=3.5A ; VCE=2V Transition frequency IC=0.7A ; VCE=10V fT 70 50 MHz Switching times ton ts Storage time tf 0.3 Fall time IC=3.5A;IB1=0.35A IB2=0.35A ,RL=8 VBB2=4V 2 s 1.5 s 0.2 Turn-on time s JMnic Product Specification 2SC4981 2SC4981 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3