2SC4934 2SC4934D 2SC4934E 2SC4046

Silicon NPN Epitaxial Application High voltage amplifier Outline Ordering Information hFE 2SC4934D 250 to 500 2SC4934E 400 to 800

2SC4934 2SC4934 Silicon NPN Epitaxial Application High voltage amplifier Outline Ordering Information hFE 2SC4934D 2SC4934D 250 to 500 2SC4934E 2SC4934E 400 to 800 2SC4934 2SC4934 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 0.2 A Collector power dissipation PC 1.5 W PC * 1 8 Junction temperature Tj 150 °C Storage temperature Tstg 55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 120 - - V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 120 - - V I C = 1 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 - - V I E = 10 µA, IC = 0 Collector cutoff current I CBO - - 10 µA VCB = 80 V, IE = 0 DC current 2SC4934D 2SC4934D hFE 250 - 500 transfer ratio 2SC4934E 2SC4934E hFE 400 - 800 Base to emitter voltage VBE - - 1.0 V VCE = 10 V, IC = 10 mA Collector to emitter saturation voltage VCE (sat) - - 1.0 V I C = 200 mA, IB = 20 mA Gain bandwidth product fT - 350 - MHz VCE = 10 V, IE = 50 mA Collector output capacitance Cob - 3.5 - pF VCB = 30 V, IE = 0, f = 1 MHz See characteristic curves of 2SC4046 2SC4046. 2 VCE = 10 V, IC = 10 mA 2SC4934 2SC4934 3 2SC4934 2SC4934 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4